966 resultados para Oxide precursor method
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High-quality (Pb, La)TiO3 ferroelectric thin films were successfully prepared on a Pt(111)/Ti/SiO2/Si(100) substrate for the first time by spin coating, using the polymeric precursor method. The X-ray diffraction patterns show that the films are polycrystalline in nature. This method allows for low temperature (500 degrees C) synthesis, a high quality microstructure and superior dielectric properties. The effects on the microstructure and electrical properties were studied by changing the La content. The films annealed at 500 degreesC have a single perovskite phase with only a tetragonal or pseudocubic structure. As the La content is increased, the dielectric constant of PLT thin films increases from 570 up to 1138 at room temperature. The C-V and P-E characteristics of perovskite thin films prepared at a low temperature show normal ferroelectric behavior, representing the ferroelectric switching property. The remanent polarization and coercive field of the films deposited decreased due to the transformation from the ferroelectric to the paraelectric phase with an increased La content. (C) 2001 Kluwer Academic Publishers.
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Fatigue is an important problem to be considered if a ferroelectric film is used for non-volatile memory devices. In this phenomena, the remanent polarization and coercive field properties degrades in cycles which increase in hysteresis loops. The reasons have been attributed to different mechanisms such as a large voltage applied on ferroelectric film in every reading process in Ferroelectric Random Access Memory (FeRAM) or memories for digital storage in computer, grain size effects and others. The aim of this work is to investigate the influence of the crystallization kinetics on dielectric and ferroelectric properties of the Pb(Zr0.53Ti0.47)O-3 thin films prepared by an alternative chemical method. Films were crystallized in air on Pt/Ti/SiO2/Si substrates at 700 degrees C for 1 hour, in conventional thermal annealing (CTA), and at 700 degrees C for 1 min and 700 degrees C 5 min, using a rapid thermal annealing (RTA) process. Final films were crack free and presented an average of 750 nm in thickness. Dielectric properties were studied in the frequency range of 100 Hz - 1 MHz. All films showed a dielectric dispersion at low frequency. Ferroelectric properties were measured from hysteresis loops at 10 kHz. The obtained remanent polarization (P-r) and coercive field (E-c) were 3.7 mu C/cm(2) and 71.9 kV/cm respectively for film crystallized by CTA while in films crystallized by RTA these parameters were essentially the same. In the fatigue process, the P, value decreased to 14% from the initial value after 1.3 x 10(9) switching cycles, for film by CTA, while for film crystallized by RTA for 5 min, P, decreased to 47% from initial value after 1.7 x 10(9) switching cycles.
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The electrochemical quartz crystal microbalance (EQCM) technique was used to study two chemically distinct Nb2O5 electrochromic thin films (one pure and the other lithium-doped) during the lithium electroinsertion reaction. In the initial cycles, the electrode showed an irreversible mass variation greater than expected for Li+ insertion/deinsertion processes, which was attributed to the wettability effect (allied to the porous morphology) that emerged as the dominant process in apparent electrode mass changes. As the cycles progressed, the mass variation stabilized and the changes in apparent mass became reversible, showing a good correlation with the charge variations.The results generally indicated that the Li+ insertion/deinsertion process occurred more easily in the Nb2O5-doped film, which also displayed a greater capacity for Li+ insertion. However, a total mass/charge balance analysis revealed that the stoichiometry of the Li+ solid state insertion/deinsertion reaction was similar in the two electrodes under study. © 2005 Elsevier B.V. All rights reserved.
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The (1 1 7) and (0 0 1 0)-oriented Bi4Ti3O12 thin films were fabricated on Pt/Ti/SiO2/Si substrates by using a polymeric precursor solution under appropriate crystallization conditions. Atomic force microscopy and scanning electron microscopy showed relatively large grains, which is typical for this system. The capacitance dependence on voltage is strongly non-linear, confirming the ferroelectric properties of the films resulting from the domain switching. The (1 1 7)-oriented films exhibited a higher remanent polarization (23.7 μ C cm(-2)) than the (0 0 1 0)-oriented films (11.8 μ C cm(-2)). Fatigue tests revealed that the temperature of thermal treatment and degree of orientation affect the performance of the device. © 2005 Elsevier B.V. All rights reserved.
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In this work, the synthesis of Nd-doped SrSnO3 by the polymeric precursor method, with calcination between 250 and 700 A degrees C is reported. The powder precursors were characterized by TG/DTA and high temperature X-ray diffraction (HTXRD). After heat treatment, the material was characterized by XRD and infrared spectroscopy. Ester and carbonate amounts were strictly related to Nd-doping. According to XRD patterns, the orthorhombic perovskite was obtained at 700 A degrees C for SrSnO3 and SrSn0.99Nd0.01O3. For Sr0.99Nd0.01SnO3, the kinetics displayed an important hole in the crystallization process, as no peak was observed in HTXRD up to 700 A degrees C, while a XRD patterns showed a crystalline material after calcination at 250 A degrees C.
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New tungstate-based ceramic pigments, displaying ZnxNi1-xWO4 stoichiometry, were obtained at low temperature using a polymeric precursor method. The powder precursors were milled in an attritor mill in an alcoholic rnedium and heat treated for 12 h. yielding homogeneous and crystalline powder pigments. Characterization (TG/DTA, XRD, IR and colorimetry) showed that mass loss increased with increasing Zn contents. Despite the presence of secondary phases and impurities, the wolframite phase was present in all samples. IR analysis revealed bands related to Me-O and [WO6](6-) group stretching was observed. The intensity of the yellow color of the pigments increased with increasing amount of nickel. (c) 2007 Elsevier Ltd. All fights reserved.
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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
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Cobalt oxides, specially the ones with perovskite structure, are of a high technological interest, due to their interesting optical, electrical and magnetic properties. La(1 -x)Ca(x)CoO(3) powder samples were synthesized by the polymeric precursor method, with x varying from 0 to 0.4. The powder precursors were characterized by TG/DTA, XRD and IR. The TG curves showed several thermal decomposition steps; the first one is ascribed to the loss of water and the remaining steps are related to the combustion of the organic matter. The XRD patterns indicated only the presence of the perovskite phase. Moreover, the structure changes from rhombohedral to cubic, as calcium is added to the perovskite and the calcination temperature increases.
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PLT (Pb1-xLaxTiO3, in which x = 0, 0.13 and 0.27) powders were successfully synthesized using the polymeric precursor method, based on the Pechini method. The polymeric precursors were calcined at temperatures ranging from 350 to 500 degrees C for 4 h. X-ray diffraction (XRD) showed the evolution of the crystalline phase starting from the amorphous precursor. Thermogravimetric analyses (TG) and differential thermal analyses (DTA) of the powder precursors showed the influence of the pH on the elimination of organic material. PLT powders have a tendency to form agglomerates, what can be verified by comparing the values of the average particle sizes obtained by Brunauer-Emmett-Teller method, BET (D-BET) with the values of the average crystallite sizes obtained by XRD (D-XRD). (C) 2007 Elsevier Ltd. All fights reserved.
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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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LiNbO3 thin films were prepared from polymeric precursor method by dip coating. The precursor films, deposited on Si(111) substrates, were heat-treated from 400°C to 900°C in order to study the heat treatment influence on the crystallinity and microstructure of the final film. The X-ray diffraction patterns showed, in particular, that these films crystallize at low temperature (450°C) and present no preferential orientation. The scanning electron microscopy studies showed that the film microstructure is strongly influenced by the annealing temperature. © 1997 Trans Tech Publications.
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Polymeric precursor solution was used to deposit LiNbO3 thin films by dip coating on sapphire substrates. The effects of processing variables, such as heat treatment conditions and number of deposited layers, on crystallinity and morphology of the final films were investigated. X-ray diffraction patterns show the oriented growth of the films. The rocking curves, obtained around the (006) LiNbO3 peak, revealed that the shape peak and the FWHM value were influenced by the processing variables. According to these parameters, some films presented very homogeneous dense and smooth surfaces, as shown by the SEM and AFM studies.
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The effects of heat-treatment temperature on LiNbO3 thin films prepared by the polymeric precursor method were investigated. The precursor solution was deposited on Si(111) substrates by dip coating. X-ray diffraction and thermal analyses revealed that the crystallization process occurred at a low temperature (420 °C) and led to films with no preferential orientation. High-temperature treatments promoted formation of the LiNb3O8 phase. Scanning electron microscopy, coupled with energy dispersive spectroscopy analyses, showed that the treatment temperature also affected the film microstructure. The surface texture - homogeneous, smooth, and pore-free at low temperature - turned into an `islandlike' microstructure for high-temperature treatments.