A Selective-Area Metal Bonding InGaAsP-Si Laser

A 1.55-mu m hybrid InGaAsP-Si laser was fabricated by the selective-area metal bonding method. Two Si blocking stripes, each with an excess-metals accommodated space, were used to separate the optical coupling area and the metal bonding areas. In such a structure, the air gap between the InGaAsP structure and Si waveguide has been reduced to be negligible. The laser operates with a threshold current density of 1.7 kA/cm(2) and a slope efficiency of 0.05 W/A under pulsed-wave operation. Room-temperature continuous lasing with a maximum output power of 0.45 mW is realized.

Compressively Strained InGaAs/InGaAsP Quantum Well Distributed Feedback Laser at 1.74μm

The compressively strained InGaAs/InGaAsP quantum well distributed feedback laser with ridge-wave- guide is fabricated at 1.74μm. It is grown by low-pressure metal organic chemical vapor deposition（MOCVD）. A strain buffer layer is used to avoid indium segregation. The threshold current of the device uncoated with length of 300μm is 11.5mA. The maximum output power is 14mW at 100mA. A side mode suppression ratio of 35.5dB is obtained.

4-W single transverse mode Yb3+-doped fiber laser pumped by 915-nm laser diode array

A cladding-pumped ytterbium-doped fiber laser is described in this letter. Using unusual pumping source with 915-nm wavelength, slope efficiency up to 75% with respect to absorbed input power and output power is obtained, a maximum output power of 4.006 W with fundamental mode is measured.

A Single Mode 980nm InGaAs/GaAs/AlGaAs Large Optical Cavity Quantum Well Laser with Low Vertical Divergence Angle

To achieve high optical power as well as low vertical divergence angle, a new kind of optimized large optical cavity (LOC) structure is applied to a ridge waveguide 980nm InGaAs/GaAs/AlGaAs multi-quantum well laser. The optical power density in the waveguide is successfully reduced. The maximum output power is more than 400mW with a slope efficiency of 0.89W/A and the far-field vertical divergence angle is lowered to 23°.

Tunable MQW-DBR lasers using selective area growth

The tunable ridge waveguide distributed Bragg reflector (DBR) lasers designed for wavelength-division-multiplex (WDM) communication systems at 1.55 um by using selective area growth (SAG) is reported. The threshold current of the DBR laser is 62mA and the output power is more than 8mW. The isolation resistance between the active region and the Bragg region is 30K Ohm. The total tuning range is 6.5nm and this DBR laser can provide 6 continuous standard WDM channels with 100GHz channel spacing; in the tuning range, the single mode suppression ratio (SMSR) is maintained more than 32dB and the maximum output power variation is less than 3dB.

Growth and fabrication of high performance 980nm strained InGaAs quantum well lasers using novel hybrid material system of InGaAsP and AlGaAs

In this paper, we report on the design, growth and fabrication of 980nm strained InGaAs quantum well lasers employing novel material system of Al-free active region and AlGaAs cladding layers. The use of AlGaAs cladding instead of InGaP provides potential advantages in laser structure design, improvement of surface morphology and laser performance. We demonstrate an optimized broad-waveguide structure for obtaining high power 980nm quantum well lasers with low vertical beam divergence. The laser structure was grown by low-pressure metalorganic chemical vapor deposition, which exhibit a high internal quantum efficiency of similar to 90% and a low internal loss of 1.5-2.5 cm(-1). The broad-area and ridge-waveguide laser devices are both fabricated. For 100 mu m wide stripe lasers with cavity length of 800 mu m, a low threshold current of 170mA, a high slope efficiency of 1.0W/A and high output power of more than 3.5W are achieved. The temperature dependences of the threshold current and the emitting spectra demonstrate a very high characteristic temperature coefficient (T-o) of 200-250K and a wavelength shift coefficient of 0.34nm/degrees C. For 4 mu m-width ridge waveguide structure laser devices, a maximum output power of 340mW with GOD-free thermal roll-over characteristics is obtained.

AlGaInP visible quantum well lasers for information technology

650 nm-range AlGaInP multi-quantum well (MQW) laser diodes grown by low pressure metal organic chemical vapor deposition (LP-MOCVD) have been studied and the results are presented in this paper. Threshold current density of broad area contact laser diodes can be as low as 350 A/cm(2). Laser diodes with buried-ridge strip waveguide structures were made, threshold currents and differential efficiencies are (22-40) mA and (0.2-0.7) mW/mA, respectively. Typical output power for the laser diodes is 5 mW, maximum output power of 15 mW has been obtained. Their operation temperature can be up to 90 degrees C under power of 5 mW. After operating under 90 degrees C and 5 mW for 72 hrs, the average increments for the threshold currents of the lasers at 25 degrees C and the operation currents at 5 mW (at 25 degrees C) are (2-3) mA and (3-5) mA, respectively. Reliability tests showed that no obvious degradation was observed after 1400 hours of CW operation under 50 degrees C and 2.5 mW.

Broadly Tunable Grating-Coupled External Cavity Laser With Quantum-Dot Active Region

A broadly tunable and high-power grating-coupled external cavity laser with a tuning range of more than 200 nm and a similar to 200-mW maximum output power was realized, by utilizing a gain device with the chirped multiple quantum-dot (QD) active layers and bent waveguide structure. The chirped QD active medium, which consists of QD layers with InGaAs strain-reducing layers different in thickness, is beneficial to the broadening of the material gain spectrum. The bent waveguide structure and facet antireflection coating are both effective for the suppression of inner-cavity lasing under large injection current.

Fabrication and testing of a doped lanthanum gallate electrolyte thin-film solid oxide fuel cell

A supported lanthanum gallate (LSGM) electrolyte thin-film solid oxide fuel cell with Ni-YSZ cermet anode and strontium-doped lanthanum manganite (LSM)-yttria stabilized zirconia (YSZ) composite cathode was, for the first time, fabricated and tested. The cell was prepared by an unconventional approach, in which an LSGM thin film (about 15 mum thick) was first deposited on a porous substrate such as a porous YSZ disk by a wet process and sintered at a high temperature (above 1400degrees C). NiO was then incorporated into the porous substrate by a carefully controlled impregnation process and fired at a much lower temperature. In this way, the severe reaction between LSGM and NiO at a high temperature, which is required for the full densification of LSGM film, can be avoided. A strontium-doped LaMnO3 (LSM)-YSZ composite cathode was screen printed on the surface of the LSGM film and then fired at 1250degrees C. The electrolyte resistances of the SOFC single cells fabricated by this approach are much lower compared to those of thick LSGM film supported cells. A maximum output power density of over 0.85 W/cm(2) at 800degreesC with H-2 as fuel and air as oxidant for a fabricated cell was achieved. (C) 2002 The Electrochemical Society.

Room-temperature continuous-wave operation of GaInNAs/GaAs quantum dot laser with GaAsN barrier grown by solid source molecular beam epitaxy

We present the results of GaInNAs/GaAs quantum dot structures with GaAsN barrier layers grown by solid source molecular beam epitaxy. Extension of the emission wavelength of GaInNAs quantum dots by ~170nm was observed in samples with GaAsN barriers in place of GaAs. However, optimization of the GaAsN barrier layer thickness is necessary to avoid degradation in luminescence intensity and structural property of the GaInNAs dots. Lasers with GaInNAs quantum dots as active layer were fabricated and room-temperature continuous-wave lasing was observed for the first time. Lasing occurs via the ground state at ~1.2μm, with threshold current density of 2.1kA/cm[superscript 2] and maximum output power of 16mW. These results are significantly better than previously reported values for this quantum-dot system.

Optimizing Amplifier Placements in a Multiwavelength Optical LAN/MAN: The Unequally Powered Wavelengths Case

Optical networks based on passive-star couplers and employing WDM have been proposed for deployment in local and metropolitan areas. These networks suffer from splitting, coupling, and attenuation losses. Since there is an upper bound on transmitter power and a lower bound on receiver sensitivity, optical amplifiers are usually required to compensate for the power losses mentioned above. Due to the high cost of amplifiers, it is desirable to minimize their total number in the network. However, an optical amplifier has constraints on the maximum gain and the maximum output power it can supply; thus, optical amplifier placement becomes a challenging problem. In fact, the general problem of minimizing the total amplifier count is a mixed-integer nonlinear problem. Previous studies have attacked the amplifier-placement problem by adding the “artificial” constraint that all wavelengths, which are present at a particular point in a fiber, be at the same power level. This constraint simplifies the problem into a solvable mixed integer linear program. Unfortunately, this artificial constraint can miss feasible solutions that have a lower amplifier count but do not have the equally powered wavelengths constraint. In this paper, we present a method to solve the minimum amplifier- placement problem, while avoiding the equally powered wavelength constraint. We demonstrate that, by allowing signals to operate at different power levels, our method can reduce the number of amplifiers required.

Minimizing the Number of Optical Amplifiers Needed to Support a Multi-Wavelength Optical LAN/MAN

Optical networks based on passive star couplers and employing wavelength-division multiplexing (WDhf) have been proposed for deployment in local and metropolitan areas. Amplifiers are required in such networks to compensate for the power losses due to splitting and attenuation. However, an optical amplifier has constraints on the maximum gain and the maximum output power it can supply; thus optical amplifier placement becomes a challenging problem. The general problem of minimizing the total amplifier count, subject to the device constraints, is a mixed-integer non-linear problem. Previous studies have attacked the amplifier placement problem by adding the “artificial” constraint that all wavelengths, which are present at a particular point in a fiber, be at the same power level. In this paper, we present a method to solve the minimum amplifier- placement problem while avoiding the equally powered- wavelength constraint. We demonstrate that, by allowing signals to operate at different power levels, our method can reduce the number of amplifiers required in several small to medium-sized networks.

Analytical tools to assess the voltage stability of induction-based distributed generators

The installation of induction distributed generators should be preceded by a careful study in order to determine if the point of common coupling is suitable for transmission of the generated power, keeping acceptable power quality and system stability. In this sense, this paper presents a simple analytical formulation that allows a fast and comprehensive evaluation of the maximum power delivered by the induction generator, without losing voltage stability. Moreover, this formulation can be used to identify voltage stability issues that limit the generator output power. All the formulation is developed by using the equivalent circuit of squirrel-cage induction machine. Simulation results are used to validate the method, which enables the approach to be used as a guide to reduce the simulation efforts necessary to assess the maximum output power and voltage stability of induction generators. (C) 2011 Elsevier Ltd. All rights reserved.

Broadly tunable CW green-to-red laser source based on frequency doubling of a quantum-dot external cavity diode laser in a PPKTP waveguide

Here we present a compact tunable all-room-temperature frequency-doubling scheme, using a periodically poled potassium titanyl phosphate (PPKTP) waveguide and a QD-ECDL. A broad wavelength tunability of the second harmonic generated light (SHG) in the spectral region between 567.7 and 629.1 nm was achieved, with maximum conversion efficiencies in range of 0.34%-7.9%. The maximum output power for the SHG light was 4.11 mW at 591.5 nm, achieved for 52 mW of launched pump power at 1183 nm, resulting in a conversion efficiency of 7.9%.

Generation of orange light from a PPKTP waveguide end-pumped by a quantum-dot tuneable laser

Here we present a compact all-room-temperature frequency-doubling scheme generating orange light, using a PPKTP waveguide and a quantum-dot external cavity diode laser (QD-ECDL). The maximum output power for the second harmonic generated light (SHG) was 1.43 mW at 613 nm, achieved for 70 mW of launched pump power at 1226 nm. This represents an important step towards a compact and wall-plug-efficient coherent orange light source, operating at room temperature.