Compressively Strained InGaAs/InGaAsP Quantum Well Distributed Feedback Laser at 1.74μm
Data(s) |
2005
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Resumo |
The compressively strained InGaAs/InGaAsP quantum well distributed feedback laser with ridge-wave- guide is fabricated at 1.74μm. It is grown by low-pressure metal organic chemical vapor deposition(MOCVD). A strain buffer layer is used to avoid indium segregation. The threshold current of the device uncoated with length of 300μm is 11.5mA. The maximum output power is 14mW at 100mA. A side mode suppression ratio of 35.5dB is obtained. 国家自然科学基金资助项目 |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Pan Jiaoqing;Wang Wei;Zhu Hongliang;Zhao Qian;Wang Baojun;Zhou Fan;Wang Lufeng.Compressively Strained InGaAs/InGaAsP Quantum Well Distributed Feedback Laser at 1.74μm,半导体学报,2005,26(9):1688-1691 |
Palavras-Chave | #半导体材料 |
Tipo |
期刊论文 |