Átomos hidrogenoides em espaços com dimensionalidade D6=3: os casos não relativístico e relativístico

A possibilidade da existência de átomos de hidrogênio estáveis em dimensões superiores a três é abordada. O problema da dimensionalidade é visto como um problema de Física, no qual relacionam-se algumas leis físicas com a dimensão espacial. A base da análise deste trabalho faz uso das equações de Schrödinger (não relativística) e de Dirac (relativística). Nos dois casos, utiliza-se a generalização tanto do setor cinemático bem como o setor de interação coulombiana para variar o parâmetro topológico dimensão. Para o caso não relativístico, os auto-valores de energia e as auto-funções são obtidas através do método numérico de Numerov. Embora existam soluções em espaços com dimensões superiores, os resultados obtidos no presente trabalho indicam que a natureza deve, de alguma maneira, se manifestar em um espaço tridimensional.

The microstructure and its high-temperature annealing behaviours of a-Si : O : H film

The microstructure and its annealing behaviours of a-Si:O:H film prepared by PECVD are investigated in detail using micro-Raman spectroscopy, X-ray photoelectron spectroscopy and Infrared absorption spectroscopy. The results indicate that the as-deposited a-Si:O:H film is structural inhomogeneous, with Si-riched phases surrounded by O-riched phases. The Si-riched phases are found to be nonhydrogenated amorphous silicon (a-Si) clusters, and the O-riched phases SiOx:H (x approximate to 1. 35) are formed by random bonding of Si, O and H atoms. By high-temperature annealing at 1150 degreesC, the SiOx:H (x approximate to 1.35) matrix is shown to be transformed into SiO2 and SiOx ( x approximate to 0.64), during which all of the hydrogen atoms in the film escape and some of silicon atoms are separated from the SiOx:H ( x approximate to 1.35) matrix; The separated silicon atoms are found to be participated in the nucleation and growth processes of solid-phase crystallization of the a-Si clusters, nano-crystalline silicon (ne-Si) is then formed. The microstructure of the annealed film is thereby described with a multi-shell model, in which the ne-Si clusters are embedded in SiOx (x = 0.64) and SiO2. The former is located at the boundaries of the nc-Si clusters, with a thickness comparable with the scale of nc-Si clusters, and forms the transition oxide layer between the ne-Si and the SiO2 matrix.

A surface kinetics model for the growth of Si1-xGex by UHV/CVD using SiH4/CeH4

The surface reaction mechanism of Si1-xGex/Si growth using SiH4 and GeH4 in UHV/CVD system was studied. The saturated adsorption and desorption of SiH4 from Si(1 0 0) surface was investigated with the help of TPD and RHEED, and it was found that all the 4 hydrogen atoms of one SiH4 molecule were adsorbed to the Si surface, which meant that the dissociated adsorption ratio was proportional to 4 power of surface vacancies. The analysis of the reaction of GeH4 was also done. A new surface reaction kinetic model on Si1-xGex/Si epitaxial growth under UHV conditions by SiH4/GeH4 was proposed based on these studies. The predictions of the model were verified by the experimental results. (C) 2000 Elsevier Science B.V. All rights reserved.

INVESTIGATION OF THE GROWN DIAMOND (100) SURFACE USING HIGH-RESOLUTION ELECTRON-ENERGY LOSS SPECTROSCOPY

The diamond (100) facets deposited at initial 1.0% CH4 have been investigated using high resolution electron energy loss spectroscopy (HREELS). The diamond (100) facets grown at 800-degrees-C are terminated by CH2 radicals, and there is no detectable frequency shift compared with the characteristic frequencies of molecular subgroup CH2. Beside the CH2 vibration loss, CH bend loss (at 140 meV) of locally monohydrogenated dimer is detected for the diamond (100) facets grown at 1000-degrees-C. Dosing the (100) facets grown at 800-degrees-C with atomic hydrogen at 1*10(-6) mbar, the loss peak at 140 meV appears. It is suggested that there are enough separately vacant sites and uniformly dispersed monohydrogenated dimers on (100) facets. This structure relaxes the steric repulsion between the adjacent hydrogen atoms during the diamond (100) surface growth.

PROTON-IMPLANTED NEW TYPE SILICON MATERIAL SUBJECTED TO 2-STEP FURNACE ANNEALING

A high-resistivity defect layer buried beneath the silicon surface layer by using proton implantation and two-step conventional furnace annealing is described. During the first annealing step (600-degrees-C), implanted hydrogen atoms move towards the damage region and then coalesce into hydrogen gas bubbles at the residual defect layer. During the second annealing step (1180-degrees-C) these bubbles do not move due to their large volume. Structural defects are formed around the bubbles at a depth of approximately 0.5-mu-m. The defect layer results in a high resistivity value. Experiments show that the quality of the surface layer has been improved because the surface Hall mobility increased by 20%. The sample was investigated by transmission electron microscopy.

Formation mechanism of defects in annealed InP

Dynamical formation mechanism of defects in the annealed nominally undoped semi-insulating InP obtained by high pressure, high temperature annealing of high purity materials is proposed. Local vibrational modes in tenths of InP samples reveal clearly existence of complexes related to hydrogen. Complexes of vacancy at indium site with one to four hydrogen atoms and isolated hydrogen or hydrogen dimers, complexes of hydrogen with various impurities are investigated by FTIR. Hydrogen can acts as an actuator for generation of antistructure defects. Fully hydrogenated indium vacancy dissociates leaving large lattice relaxation behind, deep donors, mainly larger complexes involving phosphorus at indium site and isolated hydrogen defects are created in nominally undoped InP after annealing. Also created are acceptor levels such as vacancy at indium site. Carrier charge compensation mechanism in nominally undoped InP upon annealing at high temperature is given. Microscopic models of hydrogen related defects are given. Structural, electronic and vibrational properties of LVMs related to hydrogen as well as their temperature effect are discussed.

Theoretical investigation on excitation, ionization and capture in H(1s, 2s)+H(1s, 2s) collisions

Cross sections of electron- loss in H( 1s)+ H( 1s) collisions and total collisional destruction of H( 2s) in H( 1s) + H( 2s) collisions are calculated by four- body classical- trajectory Monte Carlo ( CTMC) method and compared with previous theoretical and experimental data over the energy range of 4 - 100 keV. For the former a good agreement is obtained within di. erent four- body CTMC calculations, and for the incident energy Ep > 10 keV, comparison with the experimental data shows a better agreement than the results calculated by the impact parameter approximation. For the latter, our theory predicts the correct experimental behaviour, and the discrepancies between our results and experimental ones are less than 30%. Based on the successive comparison with experiments, the cross sections for excitation to H( 2p), single- and double- ionization and H- formation in H( 2s)+ H( 2s) collisions are calculated in the energy range of 4 - 100 keV for the. rst time, and compared with those in H( 1s)+ H( 1s) and H( 1s)+ H( 2s) collisions.

Evidence of strong projectile-target-core interaction in single ionization of neon by electron impact

The momentum distributions of recoil ions were measured in the single ionization of neon by electron impact at incident energies between 80 and 2300 eV. It was found that there are a noticeable number of recoil ions carrying large momenta, and the relative contributions of these ions becomes more pronounced with the further decrease of incident electron energy. These observed behaviors indicate that there is a strong projectile-target-core interaction in the single-ionization reaction. By comparing our results with those of electron-neon elastic scattering, we concluded that the elastic scattering of the projectile electron on the target core plays an important role at low and intermediate collision energies.

Theoretical study on the mechanism of the reaction of CH4+MgO

The reactions of (1) CH4 + MgO --> MgOH. + CH3. and (2) CH4 + MgO --> Mg + CH3OH have been studied on the singlet spin state potential energy surface at the MP2/6-311+G(2d,2p) level. These two reaction channels, both involving intermediates and transition states, have been rationalized by the structures of the species involved, natural bond orbital (NBO), and vibrational frequency analysis. We have considered two initial interacting models between CH4 and MgO: a collinear C-H approach to the O end of the MgO forming the MgOCH4 complex with C-3nu symmetry and three hydrogen atoms of the methane point to the Mg end of the MgO forming the OMgCH4 complex with C-1 symmetry. The calculations predict that reactions 1 and 2 are exothermic by 39.8 and 86.5 kJ mol(-1), respectively. Also, the former reaction proceeds more easily than the latter, and the complex HOMgCH3 is energetically preferred in the reaction of MgO + CH4.

Study on QSPR of alcohols with a novel edge connectivity index F-m

A novel edge degree f(i) for heteroatom and multiple bonds in molecular graph is derived on the basis of the edge degree delta(e(r)). A novel edge connectivity index F-m is introduced. The multiple linear regression by using the edge connectivity index F-m and alcohol-type parameter delta, alcohol-distance parameter L can provide high-quality QSPR models for the normal boiling points (BPs), molar volumes (MVs), molar refraction (MRs), water solubility(log(1/S)) and octanol/water partition (logP) of alcohols with up to 17 non-hydrogen atoms. The results imply that these physical properties may be expressed as a liner combination of the edge connectivity index and alcohol-type parameter, 6, alcohol-distance parameter, L. For the models of the five properties, the correlation coefficient r and the standard errors are 0.9969,3.022; 0.9993, 1.504; 0.9992, 0.446; 0.9924,0.129 and 0.9973,0.123 for BPs, MVs, MRs, log(1/S) and logP, respectively. The cross-validation by using the leave-one-out method demonstrates the models to be highly reliable from the point of view of statistics.

H/D exchange reaction of cyclopropane derivatives in the ion system of CD3OD

The fragmentation properties of the product ions [M + 1](+), [M + 2](+) and [M + 3](+) formed by ion-molecule reaction of four cyclopropane derivatives with the ion system of CD3OD were investigated by using collision-induced dissocation technique. The experiment results indicated that the product ions were produced via the H/D exchange reaction between reactants and reactive reagent ions of CD3OD. There are two exchangable hydrogen atoms on the ring of compounds 1 and 2, and only one for compound 3 and 4.

Theoretical study on the unimolecular fragmentation of ionized tetrahydroimidazole-substituted methylene beta-diketones

Semiempirical molecular orbital calculations on the unimolecular mass spectrometric fragmentation of tetrahydroimidazole-substituted methylene beta-diketones are carried out by Austin Model 1 method, and the calculated results give a strong support to our experimental results reported previously. The optimum of the investigated molecular configuration indicates that the two hydrogen atoms attached to nitrogen atom have different activities due to their chemical environment; the relative energies of the ions in fragmentation pathway of ionized tetrahydroimidazole-substituted methylene beta-diketones provide indirectly an evidence for both the existence of ion/neutral complex and the stabilities of these ions.

NMR study of doped poly(2,5-dimethylaniline)

Structure changes and charge transfer in the doping process of poly(2,5-dimethylaniline) (PDMA) were studied by NMR technique. It was shown that not only the polymer chain but also the hydrogen atoms and methyl groups on the aromatic rings were involved in the charge transfer process. A ''four ring BQ derivatives'' model was proposed to explain the NMR results.

The structure analysis and characterization of N-100 by NMR

To improve the mechanics properties of polyurethane materials at a high or low temperature, a hydroxy compound N-100 of HDI was synthesized, The structure analysis and characterization were made by NMR (H-1, C-13, H-1-H-1 COSY, C-13-H-1 COSY), In addition, quantitative description of the network was made on the basis of some ideal assumptions, 1D and 2D NMR can differentiate four sorts of carbonyl groups and establish the connections of all carbon and hydrogen atoms of mixed structures that originated from five different substitutions, Besides, the alkene and isocyanate, urea, biuret and trimerized isocyanuric groups were also detected, Therefore, the structure of N-100 was suggested be a polyisocyanate with complicated network which contained nitrogen atom as cross-linkage, isocyanate and alkene as end groups, The consistence of calculated values with tested values of isocyanate content, mean function degree and mean molecular weight demonstrated the correct of structure characterization and the validity of network description.

Gas permeation properties of cardo polyaryletherketones containing different alkyl substituents

The gas permeation properties of a series of cardo polyaryletherketone materials are reported, In this series, the hydrogen atoms of benzene rings on the backbone are systematically replaced with different alkyl substituents. The effects of temperature and structure variation on gas permeability and selectivity are discussed in detail. The experimental results revealed that the polyetherketone obtained by the introduction of dimethyl and diisopropyl substituents to phenolphthalein unit is 3 similar to 6 times more permeable than the unmodified one for the gases studied.