Optical modulator based on a Si0.75Ge0.25/Si/Si0.5Ge0.5 asymmetric superlattice structure

An optical modulator is designed and fabricated based on a Si0.75Ge0.25/Si/Si0.5Ge0.5 asymmetrical superlattice structure. The device comprises a p-i-n diode made on the asymmetrical superlattice integrated with a 920-mu m-long Fabry-Perot (F-P) cavity. Parameters of the rib waveguide are designed to satisfy only the fundamental-TE mode transmission. Here, 65 and 40-pm red shifts of the peak resonant were measured under the applied bias of 2.5 and -32.0 V, respectively. The analysis shows that, besides the thermal-optical and plasma dispersion effects, the Pockels effect also contributes to such a peak shift. The corresponding calculated effective Pockels coefficient is about 0.158 pm/V.

Hydrogen sensors based on AlGaN/AIN/GaN Schottky diodes

Pt/AlGaN/AIN/GaN Schottky diodes are fabricated and characterized for hydrogen sensing. The Pt Schottky contact and the Ti/Al/Ni/Au ohmic contact are formed by evaporation. Both the forward and reverse currents of the device increase greatly when exposed to hydrogen gas. A shift of 0.3 V at 300K is obtained at a fixed forward current after switching from N-2 to 10%H-2+N-2. The sensor responses under different concentrations from 50ppm H-2 to 10%H-2+N-2 at 373K are investigated. Time dependences of the device forward current at 0.5 V forward bias in N-2 and air atmosphere at 300 and 373K are compared. Oxygen in air accelerates the desorption of the hydrogen and the recovery of the sensor. Finally, the decrease of the Schottky barrier height and sensitivity of the sensor are calculated.

Keyword spotting system based on biomimetic pattern recognition

The mandarin keyword spotting system was investigated, and a new approach was proposed based on the principle of homology continuity and point location analysis in high-dimensional space geometry theory which are both parts of biomimetic pattern recognition theory. This approach constructed a hyper-polyhedron with sample points in the training set and calculated the distance between each test point and the hyper-polyhedron. The classification resulted from the value of those distances. The approach was tested by a speech database which was created by ourselves. The performance was compared with the classic HMM approach and the results show that the new approach is much better than HMM approach when the training data is not sufficient.

Comparison of cooling rates for hot carriers in GaAs AlAs quantum wells based on macroscopic and microscopic phonon models

By using three analytical phonon models in quantum wells-the slab model, the guided-mode model, and the improved version of the Huang-Zhu model [Phys. Rev. B 38, 13 377 (1998)], -and the phonon modes in bulk, the energy-loss rates of hot carriers due to the Frohlich potential scattering in GaAs/AlAs multiple quantum wells (MQW's) are calculated and compared to those obtained based on a microscopic dipole superlattice model. In the study, a special emphasis is put on the effects of the phonon models on the hot-carrier relaxation process when taking the hot-phonon effect into account. Our numerical results show that, the calculated energy-loss rates based on the slab model and on the improved Huang-Zhu model are almost the same when ignoring the hot-phonon effect; however, with the hot phonon effect considered, the calculated cooling rate as well as the hot phonon occupation number do depend upon the phonon models to be adopted. Out of the four analytical phonon models investigated, the improved Huang-Zhu model gives the results most close to the microscopic calculation, while the guided-mode model presents the poorest results. For hot electrons with a sheet density around 10(12)/cm(2), the slab model has been found to overestimate the hot-phonon effect by more than 40% compared to the Huang-Zhu model, and about 75% compared to the microscopic calculation in which the phonon dispersion is fully included. Our calculation also indicates that Nash's improved version [J. Lumin. 44, 315 (1989)] is necessary for evaluating the energy-loss rates in quantum wells of wider well width, because Huang-Zhu's original analytical formulas an only approximately orthogonal for optical phonons associated with small in-plane wave numbers. [S0163-1829(99)08919-5].

Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode

In this paper, platinum (Pt) with a thickness of 45 nm was sputtered on the surface of AlGaN/GaN heterostructure to form the Schottky contact and the back-to-back Schottky diodes were characterized for H-2 sensing at room temperature. Both the forward and reverse current of the devices increased with exposure to H-2 gas, which was attributed to Schottky barrier height reduction caused by hydrogen absorption in the catalytic metals. A shift of 0.7 V at 297 K was obtained at a fixed forward current of 0.1 mA after switching from N-2 to 40% H-2 in N-2. The sensor's responses under different concentrations from 2500 ppm H-2 to 40% H-2 in N-2 at 297 K were investigated. Time response of the sensor at a fixed bias of 1 V was given. Finally, the decrease of the Schottky barrier height and the sensitivity of the sensor were calculated. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Hydrogen sensors based on Pt-AlGN/AIN/GaN Schottky diode - art. no. 68291R

Pt/AlGaN/AlN/GaN Schottky diodes have been fabricated and characterized for H-2 sensing. Platinum (Pt) with a thickness of 20nm was evaporated on the sample to form the Schottky contact. The ohmic contact, formed by evaporated Ti/Al/Ni/Au metals, was subsequently annealed by a rapid thermal treatment at 860 degrees C for 30 s in N-2 ambience. Both the forward and reverse current of the device increased greatly when exposed to H-2 gas. The sensor's responses under different hydrogen concentrations from 500ppm to 10% H-2 in N-2 at 300K were investigated. A shift of 0.45V at 297K is obtained at a fixed forward current for switching from N-2 to 10% H-2 in N-2. Time response of the sensor at a fixed bias of 0.5 V was also measured. The turn-on response of the device was rapid, while the recovery of the sensor at N-2 atmosphere was rather slow. But it recovered quickly when the device was exposed to the air. The decrease in the barrier height of the diode was calculated to be about 160meV upon introduction of 10% H-2 into the ambient. The sensitivity of the sensor is also calculated. Some thermodynamics analyses have been done according to the Langmuir isotherm equation.

Vertical PIN ultraviolet photodetectors based on 4H-SiC homoepilayers

Vertical PIN ultraviolet photodetectors based on 4H-SiC homoepilayers are presented. The growth of the 4H-SiC homoepilayers was carried out in a LPCVD system. The size of the active area of the photodetector was 300 x 300 mu m(2). The dark and illuminated I-V characteristics were measured at reverse biases from 0 V to 30 V at room temperature. The illuminated current was at least two orders of magnitude higher than the dark current at a bias of below 12 V. The photoresponse was measured from 200 nm to 400 nm at different reverse biases and the peak values of the photo response were located at 3 10 nm. The calculated spectral detectivity D* was shown to be higher than 10(13) cmHz(1/2)/W from 260 to 360 nm with a peak value of 5.9 x 10(13) cmHz(1/2) /W at 310 nm. The peak value of the photoresponse was hundreds of times higher than the response at 400 nm, which showed the device had good visible blind performance. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Evaluation of thermal radiation dependent performance of GaSb thermophotovoltaic cell based on an analytical absorption coefficient model

Applying the model dielectric function method, we have expressed the absorption coefficient of GaSb analytically at room temperature relating to the contribution of various critical points of its electronic band structure. The calculated absorption spectrum shows good agreement with the reported experimental data obtained by spectral ellipsometry on nominally undoped sample. Based on this analytical absorption spectrum, we have qualitatively evaluated the response of active absorbing layer structure and its photoelectric conversion properties of GaSb thermophotovoltaic device on the perturbation of external thermal radiation induced by the varying radiator temperature or emissivity. Our calculation has demonstrated that desirable thickness to achieve the maximum conversion efficiency should be decreased with the increment of radiator temperature and the performance degradation brought by any structure deviation from its optimal one would be stronger meanwhile. For the popular radiator temperature, no more than 1500 K in a real solar thermophotovoltaic system, and typical doping profile in GaSb cell, a reasonable absorbing layer structure parameter should be controlled within 100-300 nm for the emitter while 3000-5000 nm for the base.

Study on the Dissociation Behavior of Gas Hydrate in Porous Sediment Based on Fractal Theory

The dissociation process of gas hydrate was regarded as a gas-solid reaction without solid production layer when the temperature was above the zero centigrade. Based on the shrinking core model and the fractal theory, a fractional dimension dynamical model for gas hydrate dissociation in porous sediment was established. The new approach of evaluating the fractal dimension of the porous media was also presented. The fractional dimension dynamical model for gas hydrate dissociation was examined with the previous experimental data of methane hydrate and carbon dioxide hydrate dissociations, respectively. The calculated results indicate that the fractal dimensions of porous media acquired with this method agree well with the previous study. With the absolute average deviation (AAD) below 10%, the present model provided satisfactory predictions for the dissociation process of methane hydrate and carbon dioxide hydrate.

Calculation of Hugoniot properties for shocked nitromethane based on the improved Tsien's EOS

We have calculated the Hugoniot properties of shocked nitromethane based on the improved Tsien's equation of state (EOS) that optimized by "exact" numerical molecular dynamic data at high temperatures and pressures. Comparison of the calculated results of the improved Tsien's EOS with the existed experimental data and the direct simulations show that the behavior of the improved Tsien's EOS is very good in many aspects. Because of its simple analytical form, the improved Tsien's EOS can be prospectively used to study the condensed explosive detonation coupling with chemical reaction.

A ionization theory based on united and separated atom model

The direct Coulomb ionization process can be generally well described by the ECPSSR theory, which bases on the perturbed-stationary- state(PSS) and accounts for the energy-loss, Coulomb-deflection, and relativistic effects. But the ECPSSR calculation has significant deviations for heavy projectile at low impinging energies. In this paper we propose a new modified ECPSSR theory, i.e. MECUSAR, in which PSS is replaced by an united and separated atom model, and molecule-orbit effect is considered. The MECUSAR calculations give better agreement with the experimental data at lower impinging energies, and agree with the ECPSSR calculations at high energies. By using OBKN (Oppenheimer-Brinkman-Kramers formulas of Nikolaev) theory to describe the contribution of the electron capture, we further modified the proposed MECUSAR theory, and calculated the target ionization cross sections for different charge states of the projectile.

Study of mass distributions of quasifission products based on dinuclear system

In the concept of dinuclear system, the quasifission rate from Kramers formula has been incorporated in the master equation in order to study the competition between fusion and qusifission. Mass yields of quasifission products of the three reactions Ca-48 + Pu-244, Ca-48 + U-238 and Fe-58 + Th-232 have been calculated, and the experimental data are reproduced very well, which is a critical test for the existing fusion model. Also we have shown the time evolution of the mass distributions of quasifission products, which provides valuable information of the process of competition between fusion and quasifission.

Production cross sections of superheavy nuclei based on dinuclear system model

The barrier distribution function method is introduced in the dinuclear system model in the calculation of the transmission probability, which is the first stage in the synthesis of superheavy nuclei. Dynamical deformation and averaging collision orientations are considered in the calculation of the fusion probability by solving master equation numerically. Survival probability with respect to xn evaporation channel (x = 1-5) in the de-excitation process of the thermal compound nucleus is calculated, in which the level density of the Fermi-gas model is used. Production cross sections of a series of superheavy nuclei formed in the reactions taken magic and deformed nuclei as target in Ca-48 induced reactions are studied systematically. The calculated results are in good agreement with available experimental data. Isotopic dependence of the production cross sections in the reactions Ca-48 + Pu is analyzed.

A discrete square global grid system based on the parallels plane projection

Knowledge Innovation Project of Chinese Academy of Sciences [KZCX3-SW-347]; National Science Fund for Distinguished Young Scholar [40225004]

A discrete square global grid system based on the parallels plane projection

We developed a direct partitioning method to construct a seamless discrete global grid system (DGGS) with any resolution based on a two-dimensional projected plane and the earth ellipsoid. This DGGS is composed of congruent square grids over the projected plane and irregular ellipsoidal quadrilaterals on the ellipsoidal surface. A new equal area projection named the parallels plane (PP) projection derived from the expansion of the central meridian and parallels has been employed to perform the transformation between the planar squares and the corresponding ellipsoidal grids. The horizontal sides of the grids are parts of the parallel circles and the vertical sides are complex ellipsoidal curves, which can be obtained by the inverse expression of the PP projection. The partition strategies, transformation equations, geometric characteristics and distortions for this DGGS have been discussed. Our analysis proves that the DGGS is area-preserving while length distortions only occur on the vertical sides off the central meridian. Angular and length distortions positively correlate to the increase in latitudes and the spanning of longitudes away from a chosen central meridian. This direct partition only generates a small number of broken grids that can be treated individually.