EFFECT OF A SI LAYER ON THE SUPERCONDUCTIVE PROPERTIES OF A BIPBSRCACUO THIN-FILM

The Pb-doped BiSrCaCuO superconducting films were grown by the single source mixed evaporation technique. The microbridges of dimensions 50 mum x 40 mum were fabricated by standard photolithography technologies. Si films with a thickness of 2500 angstrom were deposited on the microbridge area surfaces of BiPbSrCaCuO superconducting films by rf-magnetron sputtering. A greatly lowered zero resistance temperature of the microbridge area of the BiPbSrCaCuO film after Si sputtering was found. A non-linear effect of the current-voltage (I-V) characteristics at 78 K was shown. The high-frequency capacitance-voltage (C-V) curve of this structure at 78 K was symmetrical with the maximum capacitance at V = 0, and the capacitance decreased with increasing applied bias voltage. Afl experimental results are discussed.

Current oscillations and stable electric field domains in doped GaAs/AlAs superlattices

The crossover between two regimes has been observed in the vertical electric transport of weakly coupled GaAs/AlAs superlattices (SLs). At fixed d.c. bias, the SLs can be triggered by illumination to switch from a regime of temporal current oscillation to the formation of a stable electric field domain. The conversion can be reversed by raising the sample temperature to about 200 K. An effective carrier injection model is proposed to explain the conversion processes, taking into account the contact resistance originating from DX centres in the n(+)-Al0.5Ga0.5As contact layers which is sensitive to light illumination and temperature. In addition, quasiperiodic oscillations have been observed at a particular d.c. bias voltage.

A novel noise optimization technique for inductively degenerated CMOS LNA

This paper proposes a novel noise optimization technique. The technique gives analytical formulae for the noise performance of inductively degenerated CMOS low noise amplifier (LNA) circuits with an ideal gate inductor for a fixed bias voltage and nonideal gate inductor for a fixed power dissipation, respectively, by mathematical analysis and reasonable approximation methods. LNA circuits with required noise figure can be designed effectively and rapidly just by using hand calculations of the proposed formulae. We design a 1.8 GHz LNA in a TSMC 0.25 pan CMOS process. The measured results show a noise figure of 1.6 dB with a forward gain of 14.4 dB at a power consumption of 5 mW, demonstrating that the designed LNA circuits can achieve low noise figure levels at low power dissipation.

Integrated electroabsorption-modulated DFB laser by using an improved butt-joint method

An improved butt coupling method is used to fabricate an electroabsorption modulator (EAM) monolithically integrated with a distributed feedback (DFB) laser. The obtained electroabsorption-modulated laser (EML) chip with the traditional shallow ridge exhibits very low threshold current of 12 mA, output power of more than 8 mW, and static extinction ratio of -7 dB at the applied bias voltage from 0.5 to -2.0 V.

3μm GaInNAs/GasAs Quantum Well Resonant Cavity Enhanced Photodetector

A 1.3μm GaInNAs resonant cavity enhanced (RCE) photodetector (PD) has been grown by molecular beam epitaxy (MBE) monolithically on (100) GaAs substrate using a home-made ion-removed dc-plasma cell as nitrogen source. A transfer matrix method was used to optimize the device structure. The absorption region is composed of three GaInNAs quantum wells separated by GaAs layers. Devices were isolated by etching 130μm-diameter mesas and filling polyamide into grooves. The maximal quantum efficiency of the device is about 12% at 1.293μm. Full width at half maximum (FWHM) is 5.8nm and 3dB bandwidth is 304MHz. Dark current is 2 * 10~(-11) A at zero bias voltage. Further improvement of the performance of the RCE PD can be obtained by optimizing of the structure design and MBE growth conditions.

V5+-doped Bi3.4Yb0.6Ti3O12 fatigue resistant ferroelectric thin films

In this paper, a serial of Bi3.4Yb0.6Ti3-xVxO12 (BYTV) thin film with different V5+ contents were deposited on Pt/Ti/SiO2/Si substrates by chemical solution deposition (CSD). The crystallized phase and electrical properties of the films were investigated using X-ray diffraction, polarization hysteresis loops, leakage current-voltage, and fatigue test. From our experimental results, it can be found that the ferroelectric properties can be improved greatly using V5+-doped in Bi3.4Yb0.6Ti3O12 (BYT) thin film, compared with the reported BYT thin film. The remanent polarization was enhanced and excellent leakage current characteristic with 10(-11)A at the bias voltage of 4V, which is much lower than the BYT thin film or some reported bismuth layer-structure ferroelectric films. Fatigue test shows that the fabricated films have good anti-fatigue characteristic after 10(10) switching cycles. (c) 2008 Published by Elsevier B.V.

The morphology control of pentacene for write-once-read-many-times memory devices

We realized write-once-read-many-times (WORM) memory devices based on pentacene and demonstrated that the morphology control of the vacuum deposited pentacene thin film is greatly important for achieving the unique nonvolatile memory properties. The resulted memory devices show a high ON/OFF current ratio (10(4)), long retention time (over 12 h), and good storage stability (over 240 h). The reduction of the barrier height caused by a large interface dipole and the damage of the interface dipole under a critical bias voltage have been used to explain the transition processes.

Negative differential resistance and multilevel memory effects in organic devices

Negative differential resistance ( NDR) and multilevel memory effects were obtained in organic devices consisting of an anthracene derivative, 9,10-bis-{ 9,9-di-[ 4-(phenyl-p-tolyl-amino)-phenyl]-9H-fluoren-2-yl}-anthracene ( DAFA), sandwiched between Ag and ITO electrodes. The application of a negative bias voltage leads to negative differential resistance in current-voltage characteristics and different negative voltages produce different conductance currents, resulting in the multilevel memory capability of the devices. The NDR property has been attributed to charge trapping at the DAFA/Ag interface. This opens up a wide range of application possibilities of such organic-based NDR devices in memory and logic circuits.

Red electroluminescent device with europium 1,1,1-trifluoroacetylacetonate complex as emissive center

By comparing the phosphorescence spectra of Gd(acac)(3) (acac: acetylacetone) and Gd(TFacac)(3) (TFacac: 1, 1, 1-trifluoro-acetylacetone), the effect of fluorine replacing of hydrogen was discussed. It can lower the triplet state energy of acac and make it more suitable to the D-5(1) energy state of europium. Organic electroluminescent (OEL) devices with corresponding europium complexes as emissive layers were fabricated. A triple laver-type device with a structure of glass substrate/indium-tin oxide (ITO)/poly(N-vinylcarbazole) (PVK)/PVK:Eu(TFacac)(3)phen:2-(4-biphenyl)-5-(4-t-butylphenyl)-1,3,4-oxadiazole (PBD)/PBD/Al exhibits bright red luminescence upon applying dc voltage, The device has the properties of a diode and the current-bias voltage line was obtained.

Control circuits for avalanche photodiodes

Avalanche Photodiodes (APDs) have been used in a wide range of low light sensing applications such as DNA sequencing, quantum key distribution, LIDAR and medical imaging. To operate the APDs, control circuits are required to achieve the desired performance characteristics. This thesis presents the work on development of three control circuits including a bias circuit, an active quench and reset circuit and a gain control circuit all of which are used for control and performance enhancement of the APDs. The bias circuit designed is used to bias planar APDs for operation in both linear and Geiger modes. The circuit is based on a dual charge pumps configuration and operates from a 5 V supply. It is capable of providing milliamp load currents for shallow-junction planar APDs that operate up to 40 V. With novel voltage regulators, the bias voltage provided by the circuit can be accurately controlled and easily adjusted by the end user. The circuit is highly integrable and provides an attractive solution for applications requiring a compact integrated APD device. The active quench and reset circuit is designed for APDs that operate in Geiger-mode and are required for photon counting. The circuit enables linear changes in the hold-off time of the Geiger-mode APD (GM-APD) from several nanoseconds to microseconds with a stable setting step of 6.5 ns. This facilitates setting the optimal `afterpulse-free' hold-off time for any GM-APD via user-controlled digital inputs. In addition this circuit doesn’t require an additional monostable or pulse generator to reset the detector, thus simplifying the circuit. Compared to existing solutions, this circuit provides more accurate and simpler control of the hold-off time while maintaining a comparable maximum count-rate of 35.2 Mcounts/s. The third circuit designed is a gain control circuit. This circuit is based on the idea of using two matched APDs to set and stabilize the gain. The circuit can provide high bias voltage for operating the planar APD, precisely set the APD’s gain (with the errors of less than 3%) and compensate for the changes in the temperature to maintain a more stable gain. The circuit operates without the need for external temperature sensing and control electronics thus lowering the system cost and complexity. It also provides a simpler and more compact solution compared to previous designs. The three circuits designed in this project were developed independently of each other and are used for improving different performance characteristics of the APD. Further research on the combination of the three circuits will produce a more compact APD-based solution for a wide range of applications.

Time-dependent transport through molecular junctions.

We investigate transport properties of molecular junctions under two types of bias--a short time pulse or an ac bias--by combining a solution for Green's functions in the time domain with electronic structure information coming from ab initio density functional calculations. We find that the short time response depends on lead structure, bias voltage, and barrier heights both at the molecule-lead contacts and within molecules. Under a low frequency ac bias, the electron flow either tracks or leads the bias signal (resistive or capacitive response) depending on whether the junction is perfectly conducting or not. For high frequency, the current lags the bias signal due to the kinetic inductance. The transition frequency is an intrinsic property of the junctions.

Sensitive detection of H2S using gold nanoparticle decorated single-walled carbon nanotubes.

Herein, we demonstrate that highly sensitive conductometric gas nanosensors for H(2)S can be synthesized by electrodepositing gold nanoparticles on single-walled carbon nanotube (SWNT) networks. Adjusting the electrodeposition conditions allowed for tuning of the size and number of gold nanoparticles deposited. The best H(2)S sensing performance was obtained with discrete gold nanodeposits rather than continuous nanowires. The gas nanosensors could sense H(2)S in air at room temperature with a 3 ppb limit of detection. The sensors were reversible, and increasing the bias voltage reduced the sensor recovery time, probably by local Joule heating. The sensing mechanism is believed to be based on the modulation of the conduction path across the nanotubes emanating from the modulation of electron exchange between the gold and carbon nanotube defect sites when exposed to H(2)S.

Observation of C60 film formation on a highly oriented pyrolitic graphite substrate via scanning tunnelling microscopy

We have investigated the early stages in the adsorption process of C60 molecules on a highly oriented pyrolitic graphite (HOPG) substrate. C60 powder was thermally evaporated in UHV of 10−8 Pa conditions onto a freshly cleaved HOPG surface. We did not observe individual fullerenes on the substrate for the case of short deposition times and low evaporation rates. However, small islands of C60 molecules with an fcc structure could be observed when the deposition rate was about 0.2 nm/min and the total thickness was above 1 nm. The islands did not grow in the vicinity of the HOPG steps. The typical lateral dimensions of these islands were of the order of a few hundred square nanometers, having thickness of up to five monolayers. We modified the shapes and positions of these islands by the STM tip, using a small (less than 1 V) bias voltage.

Current-induced transition in atomic-sized contacts of metallic alloys

We have measured conductance histograms of atomic point contacts made from the noble-transition-metal alloys CuNi, AgPd, and AuPt for a concentration ratio of 1:1. For all alloys these histograms at low-bias voltage (below 300 mV) resemble those of the noble metals, whereas at high bias (above 300 mV) they resemble those of the transition metals. We interpret this effect as a change in the composition of the point contact with bias voltage. We discuss possible explanations in terms of electromigration and differential diffusion induced by current heating.

Liquid-crystal-based reflectarray antenna with electronically switchable monopulse patterns

A printed rcflectarray antenna, which generates a beam that can be electronically switched from a sum to a difference radiation pattern, is presented. This is achieved by applying a bias voltage of 20 V to one-half of the aperture, which is constructed above a 500 mu m cavity containing liquid crystals. Simulated results are shown to be in good agreement with measurements at X-band.