Electroabsorption modulated semiconductor optical amplifier monolithically integrated with spot-size converters

We have demonstrated an electroabsorption modulator (EAM) and semiconductor optical amplifier (SOA) monolithically integrated with novel dual-waveguide spot-size converters (SSCs) at the input and output ports for low-loss coupling to planar light-guide circuit silica waveguide or cleaved single-mode optical fiber. The device is fabricated by means of selective-area MOVPE growth (SAG), quantum well intermixing (QWI) and asymmetric twin waveguide (ATG) technologies with only three steps low-pressure MOVPE growth. For the device structure, in SOA/EAM section, double ridge structure was employed to reduce the EAM capacitances and enable high bit-rate operation. In the SSC sections, buried ridge stripe (BRS) were incorporated. Such a combination of ridge, ATG and BRS structure is reported for the first time in which it can take advantage of both easy processing of ridge structure and the excellent mode characteristic of BRS. At the wavelength range of 1550-1600 nm, lossless operation with extinction ratios of 25 dB DC and more than 10 GHz 3-dB bandwidth is successfully achieved. The beam divergence angles of the input and output ports of the device are as small as 8.0 degrees x 12.6 degrees, resulting in 3.0 dB coupling loss with cleaved single-mode optical fiber. (c) 2005 Elsevier B.V. All rights reserved.

Compact SOI arrayed waveguide grating demultiplexer with broad spectral response

A compact eight-channel flat spectral response arrayed waveguide grating (AWG) multiplexer based on siliconon-insulator (SOI) materials has been fabricated on the planar lightwave circuit (PLC). The 1-dB bandwidth of 48 GHz and 3-dB bandwidth of 69 GHz are obtained for the 100 GHz channel spacing. Not only non-adjacent crosstalk but also adjacent crosstalk are less than -25 dB. The on-chip propagation loss range is from 3.5 to 3.9 dB, and the 2 total device size is 1.5 x 1.0 cm(2). (c) 2005 Elsevier B.V. All rights reserved.

High speed silicon optical switches based on carrier depletion - art. no. 67812D

The novel design of a silicon optical switch on the mechanism of a reverse p-n junction is proposed. The figuration of contact regions at slab waveguides and the ion implantation technology for creation of junctions are employed in the new design. The two-layer rib structure is helpful for reduction of optical absorption losses induced by metal and heavily-doped contact. And more, simulation results show that the index modulation efficiency of Mach-Zehnder interferometer enhances as the concentrations of dopants in junctions increase, while the trade-off of absorption loss is less than 3 dB/mu m. The phase shift reaches about 5 x 10(-4) pi/mu m at a reverse bias of 10V with the response time of about 0.2ns. The preliminary experimental results are presented. The frequency bandwidth of modulation operation can arrive in the range of GHz. However, heavily-doped contacts have an important effect on pulse response of these switches. While the contact region is not heavily-doped, that means metal electrodes have schottky contacts with p-n junctions, the operation bandwidth of the switch is limited to about 1GHz. For faster response, the heavily-doped contacts must be considered in the design.

Electroabsorption modulated semiconductor optical amplifier monolithically integrated with spot-size converters

We have demonstrated an electroabsorption modulator (EAM) and semiconductor optical amplifier (SOA) monolithically integrated with novel dual-waveguide spot-size converters (SSCs) at the input and output ports for low-loss coupling to planar light-guide circuit silica waveguide or cleaved single-mode optical fiber. The device is fabricated by means of selective-area MOVPE growth (SAG), quantum well intermixing (QWI) and asymmetric twin waveguide (ATG) technologies with only three steps low-pressure MOVPE growth. For the device structure, in SOA/EAM section, double ridge structure was employed to reduce the EAM capacitances and enable high bit-rate operation. In the SSC sections, buried ridge stripe (BRS) were incorporated. Such a combination of ridge, ATG and BRS structure is reported for the first time in which it can take advantage of both easy processing of ridge structure and the excellent mode characteristic of BRS. At the wavelength range of 1550-1600 nm, lossless operation with extinction ratios of 25 dB DC and more than 10 GHz 3-dB bandwidth is successfully achieved. The beam divergence angles of the input and output ports of the device are as small as 8.0 degrees x 12.6 degrees, resulting in 3.0 dB coupling loss with cleaved single-mode optical fiber. (c) 2005 Elsevier B.V. All rights reserved.

Fabrication of low cost Si-based tunable high performance resonant cavity enhanced photodetectors

Low cost Si-based tunable InGaAs RCE photodetectors operating at 1.3similar to1.6 mum were fabricated using sol-gel bonding. A tuning range of 14.5 nm, a quantum efficiency of 44% at 1476 nm and a 3-dB bandwidth of 1.8 GHz were obtained.

Fabrication of a novel silica PLC hybrid integrated triplexer

A new-style silica planar lightwave circuit (PLC) hybrid integrated triplexer, which can demultiplex 1490-nm download data and 1550-nm download analog signals, as well as transmit 1310-nm upload data, is presented. It combines SiO2 arrayed waveguide gratings (AWGs) with integrated photodetectors (PDs) and a high performance laser diode (LD). The SiO2 AWGs realize the three-wavelength coarse wavelength-division multiplexing (CWDM). The crosstalk is less than 40 dB between the 1490- and 1550-nm channels, and less than 45 dB between 1310- and 1490- or 1550-nm channels. For the static performances of the integrated triplexer, its upload output power is 0.4 mW, and the download output photo-generated current is 76 A. In the small-signal measurement, the upstream 3-dB bandwidth of the triplexer is 4 GHz, while the downstream 3-dB bandwidths of both the analog and digital sections reach 1.9 GHz.

Ultra-narrow dual-channel filter based on symmetrical sampled fibre Bragg grating

A kind of ultra-narrow dual-channel filter is proposed in principle and demonstrated experimentally. This filter is designed by means of two sampled fibre Bragg gratings (SFBGs), where one is periodic 0-pi sampling and the other is symmetrical spatial sampling. The former can create two stopbands in the transmission spectra and the latter can produce two ultra-riarrow passbands. Our filter has the 3-dB bandwidth of about 1 pm, whose value is two orders of magnitude less than the bandwidth of the traditional SFBG filters. The proposed filter has a merit that the channel spacing remains unchanged when tuning the filter.

High-Saturation-Power and High-Speed Ge-on-SOI p-i-n Photodetectors

Ge-on-silicon-on-insulator p-i-n photodetectors were fabricated using an ultralow-temperature Ge buffer by ultrahigh-vacuum chemical vapor deposition. For a detector of 70-mu m diameter, the 1-dB small-signal compression power was about 110.5 mW. The 3-dB bandwidth at 3-V reverse bias was 13.4 GHz.

A widely tunable continuous-time LPF for a direct conversion DBS tuner

A continuous-time 7th-order Butterworth Gm-C low pass filter (LPF) with on-chip automatic tuning circuit has been implemented for a direct conversion DBS tuner in 0.35μm SiGe BiCMOS technology. The filter's -3 dB cutoff frequency f0 can be tuned from 4 to 40 MHz. A novel on-chip automatic tuning scheme has been successfully realized to tune and lock the filter's cutoff frequency. Measurement results show that the filter has -0.5 dB passband gain, +/- 5% bandwidth accuracy, 30 nV/Hz~(1/2) input referred noise, -3 dBVrms passband IIP3, and 27 dBVrms stopband IIP3. The I/Q LPFs with the tuning circuit draw 13 mA (with f_0 = 20 MHz) from 5 V supply, and occupy 0.5 mm~2.

Quadrifilar Loop Antenna

A new quadrifilar antenna has been developed for generating circularly polarized backfire radiation. The antenna consists of two orthogonal rectangular conducting loops, each incorporating capacitive coupling and fed using either a single or two coaxial cables. Though the geometry is much simpler than a conventional quadrifilar helix antenna, the radiation pattern performance is very similar. Measured and simulated patterns are compared for two antennas with different feed arrangements. It is shown that the resonant structure can produce a cardioid pattern with a directivity of 4.5 dB (120 3-dB beamwidth) and a front-to-back ratio of more than 20 dB at the center operating frequency. A 10% impedance bandwidth (VSWR

325GHz Single Layer Sub-Millimeter Wave FSS Based Split Ring Linear to Circular Polarisation Convertor

A single layer, frequency selective surface based, sub-millimeter wave transmission polarizer is presented that converts incident slant linear 45° polarization into circular polarization upon transmission. The polarization convertor consists of a 30 mm diameter 10 thick silicon reinforced metalized screen containing 2700 resonator cells and perforated with nested split ring slot apertures. The screen was designed and optimized using CST Microwave Studio and predictions were validated experimentally by transmission measurements over the 250-365 GHz frequency range. This frequency range is used for remote environmental monitoring and 325 GHz represents a molecular emission line for H2O. The results obtained show good agreement between measured and modeled predictions. The measured 3 dB axial ratio bandwidth was 11.75%, measured minimum Axial Ratio was 0.19 dB and the measured insertion loss of the single layer screen was 3.38 dB

Design of a salisbury screen absorber using frequency selective surfaces to improve bandwidth and angular stability performance

A new design method that greatly enhances the reflectivity bandwidth and angular stability beyond what is possible with a simple Salisbury screen is described. The performance improvement is obtained from a frequency selective surface (FSS) which is sandwiched between the outermost 377 Ω/square resistive sheet and the ground plane. This is designed to generate additional reflection nulls at two predetermined frequencies by selecting the size of the two unequal length printed dipoles in each unit cell. A multiband Salisbury screen is realised by adjusting the reflection phase of the FSS to position one null above and the other below the inherent absorption band of the structure. Alternatively by incorporating resistive elements midway on the dipoles, it is shown that the three absorption bands can be merged to create a structure with a −10 dB reflectivity bandwidth which is 52% larger and relatively insensitive to incident angle compared to a classical Salisbury screen having the same thickness. CST Microwave Studio was used to optimise the reflectivity performance and simulate the radar backscatter from the structure. The numerical results are shown to be in close agreement with bistatic measurements for incident angles up to 40° over the frequency range 5.4−18 GHz.

Anisotropic Impedance Surfaces for Linear to Circular Polarization Conversion

Anisotropic impedance surfaces are employed as low-profile and broadband reflectors that convert orthogonal linear to right- and left-handed circular polarization respectively. By virtue of anisotropy, it is possible to independently control the reflection characteristics of two orthogonal linearly polarized incident plane waves and therefore achieve linear to circular polarization conversion. Equivalent circuits for anisotropic impedance surfaces with arbitrarily shaped elements are employed to demonstrate the operating principle and a design procedure is proposed. The proposed design procedure is demonstrated by means of an example involving a dipole array. A prototype is designed and its performance characteristics are evaluated. The 3-dB relative axial ratio bandwidth exceeds 60%, while low loss and angular stability are also reported. Numerical and experimental results on a fabricated prototype are presented to validate the synthesis and the performance. © 2006 IEEE.

Frequency selective surface using nested split ring slot elements as a lens with mechanically reconfigurable beam steering capability

The design is described of a double layer frequency selective surface which can produce a differential phase shift of 180 ° as the wave propagates through it at normal incidence. The hand of an applied circularly polarized signal is reversed due to the 180° phase shift, and it is demonstrated that the exit circularly polarized output signal can be phase advanced or phase retarded by 180 ° upon rotation of the elements comprising the structure. This feature allows the surface to act as a spatial phase shifter. In this paper the beam steering capabilities of a 10 × 10 array of such elements are demonstrated. Here the individual elements comprising the array are rotated relative to each other in order to generate a progressive phase shift. At normal incidence the 3 dB Axial Ratio Bandwidth for LHCP to RHCP conversion is 5.3% and the insertion loss was found to be -2.3 dB, with minimum axial ratio of 0.05 dB. This array is shown to be able to steer a beam from -40 ° to +40 ° while holding axial ratio at the pointing angle to below 4 dB. The measured radiation patterns match the theoretical calculation and full-wave simulation results. © 2010 IEEE.

Pentagonal parch-excited sectorized antenna for localization systems

A pentagonal patch-excited sectorized antenna (SA) suitable for 2.4-2.5 GHz localization systems was studied and developed. The integration of six patch-excited structures converges into a sectorized antenna called Hive5 that provides gain improvement compared to a patch antenna, maximum variation of 3 dB beam width over the radiation pattern and circular polarization (CP). This antenna is presented and analyzed taking into account the tap length and the flare angle. The proposed antenna in combination with a RF-Switch provides a cost effective solution for localization based on Wireless Sensor Networks (WSN) and will be used for implementing angle of arrival (AoA) techniques combined with RF fingerprinting techniques.