Improved switching uniformity and low-voltage operation in TaO x-based RRAM using Ge reactive layer

Significant improvements in the spatial and temporal uniformities of device switching parameters are successfully demonstrated in Ge/TaOx bilayer-based resistive switching devices, as compared with non-Ge devices. In addition, the reported Ge/TaOx devices also show significant reductions in the operation voltages. Influence of the Ge layer on the resistive switching of TaOx-based resistive random access memory is investigated by X-ray spectroscopy and the theory of Gibbs free energy. Higher uniformity is attributed to the confinement of the filamentary switching process. The presence of a larger number of interface traps, which will create a beneficial electric field to facilitate the drift of oxygen vacancies, is believed to be responsible for the lower operation voltages in the Ge/TaO x devices. © 1980-2012 IEEE.

Fracture Properties of LPCVD Silicon Nitride and Thermally Grown Silicon Oxide Thin Films From the Load-Deflection of Long Si3N4 and SiO2/Si3N4 Diaphragms

The bulge test is successfully extended to the determination of the fracture properties of silicon nitride and oxide thin films. This is achieved by using long diaphragms made of silicon nitride single layers and oxide/nitride bilayers, and applying comprehensive mechanical model that describes the mechanical response of the diaphragms under uniform differential pressure. The model is valid for thin films with arbitrary z-dependent plane-strain modulus and prestress, where z denotes the coordinate perpendicular to the diaphragm. It takes into account the bending rigidity and stretching stiffness of the layered materials and the compliance of the supporting edges. This enables the accurate computation of the load-deflection response and stress distribution throughout the composite diaphragm as a function of the load, in particular at the critical pressure leading to the fracture of the diaphragms. The method is applied to diaphragms made of single layers of 300-nm-thick silicon nitride deposited by low-pressure chemical vapor deposition and composite diaphragms of silicon nitride grown on top of thermal silicon oxide films produced by wet thermal oxidation at 950 degrees C and 1050 degrees C with target thicknesses of 500, 750, and 1000 mn. All films characterized have an amorphous structure. Plane-strain moduli E-ps and prestress levels sigma(0) of 304.8 +/- 12.2 GPa and 1132.3 +/- 34.4 MPa, respectively, are extracted for Si3N4, whereas E-ps = 49.1 +/- 7.4 GPa and sigma(0) = -258.6 +/- 23.1 MPa are obtained for SiO2 films. The fracture data are analyzed using the standardized form of the Weibull distribution. The Si3N4 films present relatively high values of maximum stress at fracture and Weibull moduli, i.e., sigma(max) = 7.89 +/- 0.23 GPa and m = 50.0 +/- 3.6, respectively, when compared to the thermal oxides (sigma(max) = 0.89 +/- 0.07 GPa and m = 12.1 +/- 0.5 for 507-nm-thick 950 degrees C layers). A marginal decrease of sigma(max) with thickness is observed for SiO2, with no significant differences between the films grown at 950 degrees C and 1050 degrees C. Weibull moduli of oxide thin films are found to lie between 4.5 +/- 1.2 and 19.8 +/- 4.2, depending on the oxidation temperature and film thickness.

Self-assembled quantum dots, wires and quantum-dot lasers

Molecular beam epitaxy-grown self-assembled In(Ga)As/GaAs and InAs/InAlAs/InP quantum dots (QDs) and quantum wires (QWRs) have been studied. By adjusting growth conditions, surprising alignment. preferential elongation, and pronounced sequential coalescence of dots and wires under specific condition are realized. The lateral ordering of QDs and the vertical anti-correlation of QWRs are theoretically discussed. Room-temperature (RT) continuous-wave (CW) lasing at the wavelength of 960 nm with output power of 3.6 W from both uncoated facets is achieved fi-om vertical coupled InAs/GaAs QDs ensemble. The RT threshold current density is 218 A/cm(2). A RT CW output power of 0.6 W/facet ensures at least 3570 h lasing (only drops 0.83 dB). (C) 2001 Elsevier Science B.V, All rights reserved.

Bio-syngas production from biomass catalytic gasification

A promising application for biomass is liquid fuel synthesis, such as methanol or dimethyl ether (DME). Previous studies have studied syngas production from biomass-derived char, oil and gas. This study intends to explore the technology of syngas production from direct biomass gasification, which may be more economically viable. The ratio of H-2/CO is an important factor that affects the performance of this process. In this study, the characteristics of biomass gasification gas, such as H-2/CO and tar yield, as well as its potential for liquid fuel synthesis is explored. A fluidized bed gasifier and a downstream fixed bed are employed as the reactors. Two kinds of catalysts: dolomite and nickel based catalyst are applied, and they are used in the fluidized bed and fixed bed, respectively. The gasifying agent used is an air-steam mixture. The main variables studied are temperature and weight hourly space velocity in the fixed bed reactor. Over the ranges of operating conditions examined, the maximum H-2 content reaches 52.47 vol%, while the ratio of H-2/CO varies between 1.87 and 4.45. The results indicate that an appropriate temperature (750 degrees C for the current study) and more catalyst are favorable for getting a higher H-2/CO ratio. Using a simple first order kinetic model for the overall tar removal reaction, the apparent activation energies and pre-exponential factors are obtained for nickel based catalysts. The results indicate that biomass gasification gas has great potential for liquid fuel synthesis after further processing.

模式可拓识别及其神经网络模型

提出了“模式可拓识别”概念．给出了由预处理、可拓特征或模式基元的抽取和选择，以及可拓识别等部分组成的模式可拓识别系统方案．同时，给出了一高维模式可拓识别（分类）器的通用、有效的神经网络模型．

Self-assembled quantum dots, wires and quantum-dot lasers

Molecular beam epitaxy-grown self-assembled In(Ga)As/GaAs and InAs/InAlAs/InP quantum dots (QDs) and quantum wires (QWRs) have been studied. By adjusting growth conditions, surprising alignment. preferential elongation, and pronounced sequential coalescence of dots and wires under specific condition are realized. The lateral ordering of QDs and the vertical anti-correlation of QWRs are theoretically discussed. Room-temperature (RT) continuous-wave (CW) lasing at the wavelength of 960 nm with output power of 3.6 W from both uncoated facets is achieved fi-om vertical coupled InAs/GaAs QDs ensemble. The RT threshold current density is 218 A/cm(2). A RT CW output power of 0.6 W/facet ensures at least 3570 h lasing (only drops 0.83 dB). (C) 2001 Elsevier Science B.V, All rights reserved.

空间电荷阻抗和纵向束团定态解

回顾了加速器的阻抗模型 ,讨论了空间电荷阻抗和管道壁阻的高频衰减特性 .从Vlasov Maxwell方程出发提出了当存在类似空间电荷阻抗时 ,在任意外场、任意分布下 ,束团定态分布的一般解法 ,并以两种重要分布为例 ,给出重离子加速器强流参数下的定态分布 .解得的定态分布可以进一步应用于稳定性分析和计算机模拟计算 .由定态分布的求解得出了对束团中的朗道阻尼和稳定性研究非常重要的纵向“色散”函数 .

An untuned MA-loaded cavity for HIRFL-CSR

In order to realize high energy density physics and plasma physics research at HIRFL-CSR, a magnetic alloy (MA)-loaded cavity has been studied. According to the theoretical calculation and simulation for the MA-loaded cavity, we achieved a better result. The MA-loaded cavity had a higher Qf value, with a higher shunt impedance and a higher accelerating gradient. The accelerating gradient was about 95 kV/m at 1.8003 MHz, 130 kV/m at 0.9000 MHz. Compared with the ferrite-loaded cavities that are used at HIRFL-CSR, with about 10 kV/m accelerating gradient, the MA-loaded cavity obviously has an advantage. The results of the theoretical calculation and the simulation, which meet the design requirements are in good agreement.

An untuned MA-loaded cavity for HIRFL-CSR

In order to realize high energy density physics and plasma physics research at HIRFL-CSR, a magnetic alloy (MA)-loaded cavity has been studied. According to the theoretical calculation and simulation for the MA-loaded cavity, we achieved a better result. The MA-loaded cavity had a higher mu Q f value, with a higher shunt impedance and a higher accelerating gradient. The accelerating gradient was about 95 kV/m at 1.8003 MHz, 130 kV/m at 0.9000 MHz. Compared with the ferrite-loaded cavities that are used at HIRFL-CSR, with about 10 kV/m accelerating gradient, the MA-loaded cavity obviously has an advantage. The results of the theoretical calculation and the simulation, which meet the design requirements are in good agreement.

长白山阔叶红松林径级模拟研究——林分模拟

该文利用指数分布、Weibull分布和混合分布3种类型7个方程模拟长白山阔叶红松林径级分布.研究结果表明,长白山阔叶红松林的径级分布不是理想的倒“J”型,基本为“S”型;用3个负指数方程和修正指数方程模拟均为倒“J”型,在半对数图上为直线;Weibull方程模拟出了单峰,但是效果一般;用2个和3个组分的Weibull混合模型对长白山阔叶红松林径级分布进行了成功模拟,3个组分的Weibull混合模型的模拟效果有所提高,但是并没有显著改善.