（113）B-GaAs/As（0.3）Ga（0.7）As单量子阱结构的光致发光谱研究

于2010-11-23批量导入

H原子吸附对Si（113）表面的影响

采用半经验分子轨道理论方法AM1研究用Si_(16)H_(21)模拟的Si(113)高指数表面及其吸附H原子的体系,得到生成热和表面原子上受力随吸附的变化。从生成热分析得知,Si(113)表面上形成Si─H_2吸附比Si─H容易,且为放热吸附;受力分析指出了表面原子再构发生的趋向,而吸附则引起趋向改变。

Si（113）表面原子结构的低能电子衍射研究

于2010-11-23批量导入

Si（113）表面的原子结构

于2010-11-23批量导入

Si（113）表面电子结构的研究

于2010-11-23批量导入

Half-Lives of Superheavy Nuclei in Z=113 Alpha Decay Chain

The generalized liquid drop model (GLDM), including the proximity effects and centrifugal potential, and the cluster model with Cosh potential are used to study the half-lives of some Z=113 isotopes and their alpha-decay products.The experimental half-lives of (284)113, (283)113, (282)113and their alpha-decay products are well reproduced by the two models when zero angular momenta transfer is assumed. For (278)113 and its alpha-decay products, both the GLDM andthe cluster model could provide satisfactory results if we assume the alpha particle carry five units of angular momenta, which indicates that possible non zero angular momenta transfer and need further experimental measurements with high precision. Finally, we show that half-lives of alpha-decay are quite sensitive to the angular momentum transfers, and a formula could be used to describe the correlation between alpha-decay half-life and angular momentum transfer successfully.

Single crystal CVD diamond growth strategy by the use of a 3D geometrical model: Growth on (113) oriented substrates

The quality of single crystal diamond obtained by microwave CVD processes has been drastically improved in the last 5 years thanks to surface pretreatment of the substrates [A. Tallaire, J. Achard, F. Silva, R.S. Sussmann, A. Gicquel, E. Rzepka, Physica Status Solidi (A) 201, 2419-2424 (2004); G. Bogdan, M. Nesladek, J. D'Haen, J. Maes, V.V. Moshchalkov, K. Haenen, M. D'Olieslaeger, Physica Status Solidi (A) 202, 2066-2072 (2005); M. Yamamoto, T. Teraji, T. Ito, Journal of Crystal Growth 285, 130-136 (2005)]. Additionally, recent results have unambiguously shown the occurrence of (110) faces on crystal edges and (113) faces on crystal corners [F. Silva, J. Achard, X. Bonnin, A. Michau, A. Tallaire, O. Brinza, A. Gicquel, Physica Status Solidi (A) 203, 3049-3055 (2006)]. We have developed a 3D geometrical growth model to account for the final crystal morphology. The basic parameters of this growth model are the relative displacement speeds of (111), (110) and (113) faces normalized to that of the (100) faces, respectively alpha, beta, and gamma. This model predicts both the final equilibrium shape of the crystal (i.e. after infinite growth time) and the crystal morphology as a function of alpha, beta, gamma, and deposition time.

An optimized operating point, deduced from the model, has been validated experimentally by measuring the growth rate in (100), (111), (110), and (113) orientations. Furthermore, the evolution of alpha, beta, gamma as a function of methane concentration in the gas discharge has been established. From these results, crystal growth strategies can be proposed in order, for example, to enlarge the deposition area. In particular, we will show, using the growth model, that the only possibility to significantly increase the deposition area is, for our growth conditions, to use a (113) oriented substrate. A comparison between the grown crystal and the model results will be discussed and characterizations of the grown film (Photoluminescence spectroscopy, EPR, SEM) will be presented. (C) 2008 Elsevier B.V. All rights reserved.

Essay: Poets in the Ninth Circle. Host Publication: 'Poetry Ireland Review (Issue 113): A Seamus Heaney Special Issue'

No abstract available

Resolución N° 113 ¿Cuál es el alcance del control de legalidad de las cámaras de comercio respecto de los nombramientos? ¿Qué naturaleza tiene dicho control- es formal o material? ¿Es competente la Cámara respecto del control sobre presuntas falsedades del documento presentado para registro?

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Resolución No. 113: Por la cual se resuelve un recurso de reposición y se concede el de apelación

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