A redescription of Piguetiella denticulata Liang and, Xie (Oligochaeta, Tubificidae, Naidinae) from China, with a key to the genus Piguetiella

Piguetiella denticulata Liang & Xie, 1997 is redescribed based on the type series collected from the type locality, Songtao River, and streams of the Zhangjiajie Mountain in southwestern China, and specimens from several tributaries of the Yangtze River. This species is characterized by a large body size, the absence of eyespots and dorsal hair chaetae, the same size and shape of dorsal and ventral chaetae, the presence of 3-4 intermediate teeth on both ventral and dorsal chaetae, and an intestinal dilation in IX-X segments. The essential characteristics used to diagnose the genus are discussed and a key to the genus is provided.

Quantum key distribution for 10 Gb/s dense wavelength division multiplexing networks

We demonstrate quantum key distribution (QKD) with bidirectional 10 Gb/s classical data channels in a single fiber using dense wavelength division multiplexing. Record secure key rates of 2.38 Mbps and fiber distances up to 70km are achieved. Data channels are simultaneously monitored for error-free operation. The robustness of QKD is further demonstrated with a secure key rate of 445 kbps over 25km, obtained in the presence of data lasers launching conventional 0 dBm power. We discuss the fundamental limit for the QKD performance in the multiplexing environment. © 2014 AIP Publishing LLC.

Picosecond pulse generation in narrow stripe mode-locked quantum dot master oscillator power amplifier

This paper reports a monolithically integrated mode-locked narrow stripe QD MOPA operating at 1300nm generating a stable 20GHz pulse train with an average power of 46.4mW and a pulse duration of 8.3ps. © Optical Society of America.

Control of material transport through pulse shape manipulation-a development toward designer pulses

The variety of laser systems available to industrial laser users is growing and the choice of the correct laser for a material target application is often based on an empirical assessment. Industrial master oscillator power amplifier systems with tuneable temporal pulse shapes have now entered the market, providing enormous pulse parameter flexibility in an already crowded parameter space. In this paper, an approach is developed to design interaction parameters based on observations of material responses. Energy and material transport mechanisms are studied using pulsed digital holography, post process analysis techniques and finite-difference modelling to understand the key response mechanisms for a variety of temporal pulse envelopes incident on a silicon (1/1/1) substrate. The temporal envelope is shown to be the primary control parameter of the source term that determines the subsequent material response and the resulting surface morphology. A double peak energy-bridged temporal pulse shape designed through direct application of holographic imaging data is shown to substantially improve surface quality. © 2014 IEEE.

The influence of boundary conditions on tip leakage flow

Most of the current understanding of tip leakage flows has been derived from detailed cascade experiments. However, the cascade model is inherently approximate since it is difficult to simulate the boundary conditions present in a real machine, particularly the secondary flows convecting from the upstream stator row and the relative motion of the casing and blade. This problem is further complicated when considering the high pressure turbine rotors of aero engines, where the high Mach numbers must also be matched in order to correctly model the aerodynamics and heat transfer. More realistic tests can be performed on high-speed turbines, but the experimental fidelity and resolution achievable in such set-ups is limited. In order to examine the differences between cascade models and real-engine behavior, the influence of boundary conditions on the tip leakage flow in an unshrouded high pressure turbine rotor is investigated using RANS calculations. This study examines the influence of the rotor inlet condition and relative casing motion. A baseline calculation with a simplified inlet condition and no relative endwall motion exhibits similar behavior to cascade studies. Only minor changes to the leakage flow are induced by introducing either a more realistic inlet condition or relative casing motion. However when both of these conditions are applied simultaneously the pattern of leakage flow is very different, with ingestion of flow over much of the early suction surface. The paper explores the physical processes driving this change and the impact on leakage losses and modeling requirements. Copyright © 2013 by ASME.

Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices

To form low-resistance Ohmic contact to p-type GaN, InGaN/GaN multiple quantum well light emitting diode wafers are treated with boiled aqua regia prior to Ni/Au (5 nm/5 nm) film deposition. The surface morphology of wafers and the current-voltage characteristics of fabricated light emitting diode devices are investigated. It is shown that surface treatment with boiled aqua regia could effectively remove oxide from the surface of the p-GaN layer, and reveal defect-pits whose density is almost the same as the screw dislocation density estimated by x-ray rocking curve measurement. It suggests that the metal atoms of the Ni/Au transparent electrode of light emitting diode devices may diffuse into the p-GaN layer along threading dislocation lines and form additional leakage current channels. Therefore, the surface treatment time with boiled aqua regia should not be too long so as to avoid the increase of threading dislocation-induced leakage current and the degradation of electrical properties of light emitting diodes

Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors

The leakage current of GaN Schottky barrier ultraviolet photodetectors is investigated. It is found that the photodetectors adopting undoped GaN instead of lightly Si-doped GaN as an active layer show a much lower leakage current even when they have a higher dislocation density. It is also found that the density of Ga vacancies in undoped GaN is much lower than in Si-doped GaN. The Ga vacancies may enhance tunneling and reduce effective Schottky barrier height, leading to an increase of leakage current. It suggests that when undoped GaN is used as the active layer, it is necessary to reduce the leakage current of GaN Schottky barrier ultraviolet photodetector.

Optical spectral relation between the master and the frequency-locked slave lasers

In this paper, the spectral relation between the master and the frequency-locked slave laser (FLSL) is investigated by the conventional technique of optical intensity modulation and optical heterodyne. Experimentally, we demonstrate that under complete and stable locking condition, the lightwave of the FLSL and the sidebands of the master laser produced by the optical intensity modulation are perfectly coherent (frequency coherence). Referring to our recent studies, the lightwave of the master laser and its corresponding sidebands are also perfectly coherent. Additionally, the spectral structures of two perfectly coherent lightwaves are identical in the level of wave train. Therefore, we indirectly verify that the spectral structures of the FLSL and the master laser are identical in the level of wave train.

Role of Bi3+ ions for Er3+ ions efficient 1.54 mu m light emission in Er/Bi codoped SiO2 thin film prepared by sol-gel method

Er/Bi codoped SiO2 thin films were prepared by sol-gel method and spin-on technology with subsequent annealing process. The bismuth silicate crystal phase appeared at low annealing temperature while vanished as annealing temperature exceeded 1000 degrees C, characterized by X-ray diffraction, and Rutherford backscattering measurements well explained the structure change of the films, which was due to the decrease of bismuth concentration. Fine structures of the Er3+-related 1.54 mu m light emission (line width less than 7 nm) at room temperature was observed by photoluminescence (PL) measurement. The PL intensity at 1.54 gm reached maximum at 800 degrees C and decreased dramatically at 1000 degrees C. The PL dependent annealing temperature was studied and suggested a clear link with bismuth silicate phase. Excitation spectrum measurements further reveal the role of Bi3+ ions for Er3+ ions near infrared light emission. Through sol-gel method and thermal treatment, Bi3+ ions can provide a perfect environment for Er3+ ion light emission by forming Er-Bi-Si-O complex. Furthermore, energy transfer from Bi3+ ions to Er3+ ions is evidenced and found to be a more efficient way for Er3+ ions near infrared emission. This makes the Bi3+ ions doped material a promising application for future erbium-doped waveguide amplifier and infrared LED

Growth and fabrication of AlGaN/GaN HEMT based on Si(111) substrates by MOCVD

AlGaN/GaN high electron mobility transistor (HEMT) hetero-structures were grown on the 2-in Si (1 1 1) substrate using metal-organic chemical vapor deposition (MOCVD). Low-temperature (LT) AlN layers were inserted to relieve the tension stress during the growth of GaN epilayers. The grown AlGaN/GaN HEMT samples exhibited a maximum crack-free area of 8 mm x 5 mm, XRD GaN (0 0 0 2) full-width at half-maximum (FWHM) of 661 arcsec and surface roughness of 0.377 nm. The device with a gate length of 1.4 mu m and a gate width of 60 mu m demonstrated maximum drain current density of 304 mA/mm, transconductance of 124 mS/mm and reverse gate leakage current of 0.76 mu A/mm at the gate voltage of -10 V. (C) 2008 Published by Elsevier Ltd.

Influence of penetrating V-pits on leakage current of GaN based p-i-n UV detector

The leakage mechanism of GaN-based p-i-n (p-AlGaN/i-GaN/n-GaN) UV detector has been investigated. With the same dislocation density, devices made from material with higher density of V-pits on surface produce larger leakage current. SEM images show that some V-pits penetrate into i-GaN layer, sometimes even the n-GaN layer. If p-ohmic contact metal (Ni/Au) deposits in the V-pits, Schottky contact would be formed at the interface of metal and i-GaN, or form ohmic contact at the interface of metal and n-GaN. The existence of parallel Schottky junction and ohmic contact resistance enhances the leakage current greatly.

Quantum measurement of a solid-state qubit: A unified quantum master equation approach

Quantum measurement of a solid-state qubit by a mesoscopic detector is of fundamental interest in quantum physics and an essential issue in quantum computing. In this work, by employing a unified quantum master equation approach constructed in our recent publications, we study the measurement-induced relaxation and dephasing of the coupled-quantum-dot states measured by a quantum-point contact. Our treatment pays particular attention on the detailed-balance relation, which is a consequence of properly accounting for the energy exchange between the qubit and detector during the measurement process. As a result, our theory is applicable to measurement at arbitrary voltage and temperature. Both numerical and analytical results for the qubit relaxation and dephasing are carried out, and important features are highlighted in concern with their possible relevance to future experiments.

Quantum master-equation approach to quantum transport through mesoscopic systems

For quantum transport through mesoscopic systems, a quantum master-equation approach is developed in terms of compact expressions for the transport current and the reduced density matrix of the system. The present work is an extension of Gurvitz's approach for quantum transport and quantum measurement, namely, to finite temperature and arbitrary bias voltage. Our derivation starts from a second-order cumulant expansion of the tunneling Hamiltonian; then follows the conditional average over the electrode reservoir states. As a consequence, in the usual weak-tunneling regime, the established formalism is applicable for a wide range of transport problems. The validity of the formalism and its convenience in application are well illustrated by a number of examples.