Effect of water content in sol on optical properties of hybrid sol-gel derived TiO2/SiO2/ormosil film

Sol-gel derived TiO2/SiO2/ormosil hybrid planar waveguides have been deposited on soda-lime glass slides and silicon substrates, films were heat treated at 150 degreesC for 2 h or dried at room temperature. Different amounts of water were added to sols to study their impacts on microstructures and optical properties of films. The samples were characterized by m-line spectroscopy, Fourier transform infrared spectroscopy (FT-IR), UV/VIS/NIR spectrophotometer (UV-vis), atomic force microscopy (AFM), thermal analysis instrument and scattering-detection method. The refractive index was found to have the largest value at the molar ratio H2O/OR = 1 in sol (OR means -OCH3, -OC2H5 and -OC4H9 in the sol), whereas the thickest film appears at H2O/OR = 1/2. The rms surface roughness of all the films is lower than 1.1 nm, and increases with the increase of water content in sol. Higher water content leads to higher attenuation of film. (C) 2004 Elsevier B.V. All rights reserved.

Um problema de interferências quânticas: segregação de impurezas em sistemas metálicos nanoestruturados

Neste trabalho estudamos o problema da segregação de impurezas substitucionais em sistemas nanoestruturados metálicos formados pela justaposição de camadas (multicamadas). Utilizamos o modelo de ligações fortes (tight-binding) com um orbital por sítio para calcular a estrutura eletrônica desses sistemas, considerando a rede cristalina cubica simples em duas direções de crescimento: (001) e (011). Devido à perda de simetria do sistema, escrevemos o hamiltoniano em termos de um vetor de onda k, paralelo ao plano, e um ındice l que denota um plano arbitrario do sistema. Primeiramente, calculamos a estrutura eletrônica do sistema considerando-o formado por átomos do tipo A e, posteriormente, investigamos as modificações nessa estrutura eletrônica ao introduzirmos uma impureza do tipo B em um plano arbitrário do sistema. Calculamos o potencial introduzido por esta impureza levando-se em conta a neutralidade de carga através da regra de soma de Friedel. Calculamos a variação da energia eletrônica total ΔEl como função da posição da impureza. Como substrato, consideramos sistemas com ocupações iguais a 0.94 e 0.54 elétrons por banda, o que dentro do modelo nos permite chamá-los de Nie Cr. As impurezas sao tambem metais de transição - Mn, Fee Co. Em todos os casos investigados, foi verificado que a variação de energia eletrônica total apresenta um comportamento oscilatorio em função da posição da impureza no sistema, desde o plano superficial, até vários planos interiores do sistema. Como resultado, verificamos a ocorrencia de planos mais favoráveis à localização da impureza. Ao considerarmos um número relativamente grande de planos, um caso em particular foi destacado pelo aparecimento de um batimentono comportamento oscilatório de ΔEl. Estudamos também o comportamento da variação da energia total, quando camadas (filmes) são crescidas sobre o substrato e uma impureza do mesmo tipo das camadas é colocada no substrato. Levamos em conta a diferença de tamanho entre os átomos do substrato e os átomos dos filmes. Analisamos ainda a influência da temperatura sobre o comportamento oscilatório da energia total, considerando a expansão de Sommerfeld.

Direct writing computer-generated holograms on metal film by an infrared femtosecond laser

Writing computer-generated holograms has been achieved by using near infrared femtosecond laser selective ablation of metal film deposited on glass substrate. The diffraction features with data reconstruction of fabricated computer-generated holograms were evaluated. Both transmission and reflection holograms can be fabricated in a single process. The process required no mask, no pre- or post-treatment of the substrate. (C) 2005 Optical Society of America.

Growth and properties of ZnO thin film on beta-Ga2O3(100) substrate by pulsed laser deposition

Zinc oxide (ZnO) thin films were grown on the beta-Ga2O3 (100) substrate by pulsed laser deposition (PLD). X-ray diffraction (XRD) indicated that the ZnO films are c-axis oriented. The optical and electrical properties of the films were investigated. The room temperature Photoluminescence (PL) spectrum showed a near band emission at 3.28 eV with two deep level emissions. Optical absorption indicated a visible exciton absorption at room temperature. The as-grown films had good electrical properties with the resistivities as low as 0.02 Omega cm at room temperature. Thus, beta-Ga2O3 (100) substrate is shown to be a suitable substrate for fabricating ZnO film. (c) 2006 Elsevier B.V. All rights reserved.

Optical properties of ZnO thin film on gamma-LiAlO2 substrate grown by pulsed laser deposition

Optical properties were investigated of ZnO thin films grown oil (100) gamma-LiAlO2 (LAO) substrates by pulsed laser deposition method. C-axis oriented ZnO film was grown oil (100) LAO substrate at the substrate temperature of 550 degrees C. The transmittances of the films were over 85%. Peaks attributed to excitons were seen in the absorption spectra, indicating that the thin films have high crystallinity. Photoluminescence spectra were observed at room temperature; the peak at 550 urn is ascribed to oxygen vacancies in the ZnO films caused by the diffusion of Li from the substrate into the film during deposition. (c) 2005 Elsevier B.V. All rights reserved.

Deposition of Au/TiO2 film by pulsed laser

Au nanoparticles, which were photoreduced by a Nd:YAG laser in HAuCl4 solution containing TiO2 colloid and accompanied by the TiO2 particles, were deposited on the substrate surface. The film consisting of Au/TiO2 particles was characterized by the absorption spectra, scanning electron microscopy (SEM) and X-ray diffraction (XRD) analysis. The adhesion between the film and substrate was evaluated by using adhesive tape test. It was found that the presence of TiO2 dramatically enhanced the adhesion strength between the film and the substrate, as well as the deposition rate of film. The mechanism for the deposition of Au/TiO2 film was also discussed. (c) 2005 Elsevier B.V. All rights reserved.

Formation of arrayed holes on metal foil and metal film by multibeam interfering femtosecond laser beams

We report on an optical interference method to fabricate arrayed holes on metal nickel foil and aluminum film deposited on glass substrate by means of five-beam interference of femtosecond laser pulses. Optical microscope and scanning electron microscope observations revealed that arrayed holes of micrometre-order were fabricated on both metal foil and metal film. The present technique allows one-step, large-area, micrometric processing of metal materials for potential industrial applications.