Tuning of conduction intersublevel absorption wavelengths in (In, Ga)As/GaAs quantum-dot nanostructures

We demonstrate that by increasing the amount of (In, Ga)As deposit in a quantum dot layer, the intersublevel absorption wavelength for (In, Ga)As/GaAs quantum-dot infrared photodetectors can be blue-shifted from 15 to 10 mu m while the photoluminescence peak is red-shifted. We directly compare the measured energy spacing between intersublevels obtained from infrared absorption spectroscopy with those obtained from photoluminescence spectroscopy. We find that the intersublevel energy spacing determined from absorption measurements is much larger than that obtained from the photoluminescence measurements. (C) 2000 American Institute of Physics. [S0003-6951(00)04524-1].

Improvement of Ge self-organized quantum dots by use of Sb surfactant

A Sb-mediated growth technique is developed to deposit Ge quantum dots (QDs) of small size, high density, and foe of dislocations. These QDs were grown at low growth temperature by molecular beam epitaxy. The photoluminescence and absorption properties of these Ge QDs suggest an indirect-to-direct conversion, which is in good agreement with a theoretical calculation. (C) 1998 American Institute of Physics. [S0003-6951(98)00420-3].

Study on pulsed laser ablation and deposition of ZnO thin films by L-MBE

ZnO, as a wide-band gap semiconductor, has recently become a new research focus in the field of ultraviolet optoelectronic semiconductors. Laser molecular beam epitaxy (L-MBE) is quite useful for the unit cell layer-by-layer epitaxial growth of zinc oxide thin films from the sintered ceramic target. The ZnO ceramic target with high purity was ablated by KrF laser pulses in an ultra high vacuum to deposit ZnO thin film during the process of L-MBE. It is found that the deposition rate of ZnO thin film by L-MBE is much lower than that by conventional pulsed laser deposition (PLD). Based on the experimental phenomena in the ZnO thin film growth process and the thermal-controlling mechanism of the nanosecond (ns) pulsed laser ablation of ZnO ceramic target, the suggested effective ablating time during the pulse duration can explain the very low deposition rate of the ZnO film by L-MBE. The unique dynamic mechanism for growing ZnO thin film is analyzed. Both the high energy of the deposition species and the low growth rate of the film are really beneficial for the L-MBE growth of the ZnO thin film with high crystallinity at low temperature.

The fabrication of GaN-based nanopillar light-emitting diodes

InGaN/GaN multiple quantum well-based light-emitting diode (LED) nanopillar arrays were fabricated using Ni self-assembled nanodots as etching mask. The Ni nanodots were fabricated with a density of 6 x 10(8)-1.5 x 10(9) cm(-2) and a dimension of 100-250 nm with varying Ni thickness and annealing duration time. Then LED nanopillar arrays with diameter of approximately 250 nm and height of 700 nm were fabricated by inductively coupled plasma etching. In comparison to the as-grown LED sample an enhancement by a factor of four of photoluminescence (PL) intensity is achieved for the nanopillars and a blueshift as well as a decrease in full width at half maximum of the PL peak are also observed. The method of additional chemical etching was used to remove the etching-induced damage. Then nano-LED devices were further completed using a planarization approach to deposit p-type electrode on the tips of nanopillars. The current-voltage curves of both nanopillars and planar LED devices are measured for comparison.

A DUAL ION-BEAM EPITAXY SYSTEM

The design and characteristics of a dual ion beam epitaxy system (DIBE) are discussed. This system is composed of two beam lines, each providing a mass-separated ion beam converging finally with the other into the target chamber. The ions are decelerated and deposited on a substrate which can be heated to a temperature of 800-degrees-C. Currents of a few hundred microamperes are available for both beams and the deposit energies are in the range from tens to 1000 eV. The pressure of the target chamber during processing is about 7 x 10(-6) Pa. Preliminary experiments have proved that compound semiconductor materials such as GaN can be synthesized using the DIBE system.

PHOTOLUMINESCENCE AND SURFACE PHOTOVOLTAIC SPECTRA OF STRAINED INP ON GAAS

A high energy shift of the band-band recombination has been observed in the photoluminescence (PL) spectra of the strained InP epilayer on GaAs by metalorganic chemical vapor deposit. The strain determined by PL peak is in good agreement with calculated thermal strain. The surface photovoltalic spectra gives the information about energy gap, lattice mismatching, and composition of heteroepilayers, diffusion length, surface, and interface recombination velocity of minority carriers of heteroepitaxy layers.

Dislocation movement in nitrogen-doped Czochralski silicon

Dislocation movement in N-doped Czochralski silicon (Cz-Si) was surveyed by four point bend method. Dislocation movement velocities in Cz-Si doped with nitrogen, with both nitrogen and antimony, and with only antimony were investigated. The order of measured dislocation movement velocities, at 700 degrees C less than or equal to T less than or equal to 800 degrees C and under resolved stress sigma=4.1 kg/mm(2), was V-Sb.O > V-n.Sb.O>V-N.O. The experiments showed that nigtrogen doping could retard the movement of dislocations.

Growth of SiGe by D-UHV/CVD at Low Temperature

The temperature is a key factor for the quality of the SiGe alloy grown by D-UHV/CVD. In conventional conditions,the lowest temperature for SiGe growth is about 550℃. Generally, the pressure of the growth chamber is about 10~(-5) Pa when liquid nitrogen is introduced into the wall of the growth chamber with the flux of 6sccm of the disilane gas. We have succeeded in depositing SiGe films at much lower temperature using a novel method. It is about 10.2 Pa without liquid nitrogen, about 3 magnitudes higher than the traditional method,leading to much faster deposition rate. Without liquid nitrogen,the SiGe film and SiGe/Si superlattice are grown at 485℃. The DCXRD curves and TEM image show that the quality of the film is good. The experiments show that this method is efficient to deposit SiGe at low temperature.

High-mobility Ga-polarity GaN achieved by NH3-MBE

GaN epilayers were grown on (0001) sapphire substrates by NH3-MBE and RF-MBE (radio frequency plasma). The polarities of the epilayers were investigated by in-situ RHEED, chemical solution etching and AFM surface examination. By using a RF-MBE grown GaN layer as template to deposit GaN epilayer by NH3-MBE method, we found that not only Ga-polarity GaN films were repeatedly obtained, but also the electron mobility of these Ga-polarity films was significantly improved with a best value of 290 cm(2)/V.s at room temperature. Experimental results show it is an easy and stable way for growth of high quality Ga-polarity GaN films.

沉积物中导热体周围水合物分解范围研究

沉积物水合物在热源周围的分解范围是水合物热开采以及相关灾害分析的重要基础数据.该文针对平面内边界有恒温热源的水合物热分解范围问题进行了理论分析和四氢呋喃水合物沉积物模型实验,并将两者结果进行了对比.结果表明:沉积物水合物最大分解范围主要取决于热源与环境温度的温差;热源周围水合物热分解最大范围的理论值与实验值接近,误差小于5%

液化土层中桶形基础承载力弱化的数值模拟

对动冰载作用下饱和砂土层液化过程中桶形基础承载力的弱化规律进行了数值模拟。建立液化土层的简化计算模型,采用FLAC3D软件分析了等效动冰载作用下土层不同位置的液化度及其主要影响因素;进而将具一定液化度土层的抗力作用等效为沿桶壁的不同刚度的非线性弹簧作用,在给定的位移破坏标准下确定不同液化度土层中桶形基础的承载力,分析液化土层中桶形基础承载力的弱化特征。在文中荷载条件和计算模型下,当土层顶面液化度为0.60、底面液化度为0.06时,土层中桶形基础的承载力降低12%。

粉土地层中桶形基础水平动载响应的离心机实验研究

对动载作用下分层土中单桶基础动承载特性、四桶基础动承载特性进行了离心机实验模拟,并对动载后桶基静承载力进行了模拟。结果表明:桶顶与粘土面相同时,有上覆粘土层条件下的桶基动力响应较无上覆粘土层条件下的孔压增长小,但沉陷大;桶顶与粘土层下的砂土面相同时比与粘土面相同时的响应大。桶基在动载后的静承载力得到提高。由于液化区的滤波和对动载的衰减作用,发生沉降的范围有限,离桶壁约一倍桶高距离。超孔隙水压从桶基边沿水平向逐渐衰减,从土面开始往下逐渐衰减到零。桶基周围砂土完全液化的厚度随载荷幅值的增加而增加,最大值约为桶高的40%。

The level and distribution of chromosomal aberration of tomato seeds at different penetration depths of carbon ions

The relationship between the penetration depth and the level and distribution of chromosomal aberration of the root tip cells were investigated by exposure of the superposed tomato seeds to 80 MeV/u carbon ions. The results showed that on the entrance of the beam the chromosomal aberration level was low. Damage such as breaks and gaps were dominant. At the Bragg peak, the chromosomal aberration level was high. The yields of dicentrics, rings and disintegrated small chromosomes increased but the yields of breaks and gaps decreased. These results are consistent with the distribution of the physical depth dose pro. le of carbon ions. It is effective to deposit the Bragg peak on the seeds to induce hereditary aberration in the mutation breeding with heavy ions.

the ebb-tidal delta of the venice lagoon,Italy

Very high-resolution seismic lines were collected offshore the Venice Lagoon in the framework of the Co.Ri.La'New very high resolution seismic methods to study the Venice Lagoon subsoil' project. The 140 km boomer profiles led to the identification of a convex-upward,lens-shaped body just outside the Lido inlet,one of the three lagoon inlets,which has been interpreted as an ebb-tidal delta.The comparison between the scismostratigraphic setting og this deposit, as revealed by the seismic lines,and the analyses of historicalbathymetric maps highlighted the key role of human interventions in the formation and evolution of the Lido inlet cbb-tidal delta.To preserve the lagoon environment but also to ensure a navigable way, human interventions at the Lidoinlet,performed since the fourteenth centtury, caused profound variations in the inlet dynamics,ldading to a progressive increase in the sediment dispersion from the lagoon interior towards the sea. The ebb-tidal delta of the Lido nilet is thus a very recent feature compared with the formation of the Venice lagoon and formed mainly as a consequence of the construction of the two jetties that have bound the inlet form AD 1886 to the present day.

从沙尘暴看黄土的沉积及黄土高原的形成

以近年来我国西北地区多发的沙尘暴现象为缘起 ,对沙尘暴的特征、发生机制等进行了讨论 ;论述了沙尘暴引起的降尘与黄土的堆积和沉积的过程 ;黄土堆积沉积的年龄、颗粒成分等 ;以及沙尘暴与黄土高原的形成之间的关系 ,同时论述了黄土高原的环境变迁 .认为高空均质粉尘的降落是不均匀的 ;高空降尘是突发的 ,而风及流水对堆积粉尘的改造是长期和连续的