Electromechanical properties of calcium bismuth titanate films: A potential candidate for lead-free thin-film piezoelectrics

CaBi4Ti4O15 (CBTi144) thin films were evaluated for use as lead-free thin-film piezoelectrics in microelectromechanical systems. The films were grown by the polymeric precursor method on (100)Pt/Ti/SiO2/Si substrates. The a/b-axis orientation of the ferroelectric film is considered to be associated with the preferred orientation of the Pt bottom electrode. The P-r and E-c were 14 mu C/cm(2) and 64 kV/cm, respectively, for a maximum applied field of 400 kV/cm. The domain structure was investigated by piezoresponse force microscopy. The film has a piezoelectric coefficient, d(33), equal to 60 pm/V and a current density of 0.7 mA/cm(2).

Screen printed PLZT thick films prepared from nanopowders

The gap between the bulk materials and thin films can be filled with thick films suitably designed and appropriate processed. Thick films of complex system like lead-lanthanum-zirconium titanate (PLZT) is difficult to produce by simple solid-state reaction keeping compositional homogeneity and optimal grain size distribution. In the present work, PLZT thick films were fabricated by screen-printing technique from nanosized powders obtained through soft chemistry by polymeric precursor method. Thick film paste was obtained by mixing PLZT fine powders and organic vehicle. The upper and bottom electrodes based on Ag-Pd and functional component based on PLZT were screen-printed on alumina substrate and after that annealed in air atmosphere. The powder morphology, microstructure, dielectric and ferroelectric properties of 9.5/65/35 PLZT thick films were analysed. (c) 2007 Elsevier Ltd. All rights reserved.

Electrodeposited thin mercury films on Pt-Ir alloy electrodes

Mercury thin films prepared by electrochemical deposition on Pt-Ir alloy and after partial removing of mercury at different temperatures were studied by means of an interferometric surface mapping microscope and by X-ray photoelectronic spectroscopy. Mercury film samples having mercury partially removed by anodic stripping at a potential more positive than the corresponding peak in the voltammogram were also studied using the same techniques. For blank samples the surface topographic studies showed well defined grain boundaries. Mercury film samples when heated up to different temperatures showed as material is removed and that the surface roughness decreases as the temperature increases. For samples heated up to 800 degrees C the surface roughness is approximately the same that for the blank. A model for the interphase of volumetric mercury electrodeposited on a Pt-Ir alloy has been proposed using samples both electrochemically and thermally removed of their Hg coatings. The model includes a layered three-region structure, containing at least two Pt-Hg intermetallics: PtHg4 and PtHg2. A substrate modified region, iridium rich, has also been detected. (C) 1999 Elsevier B.V. S.A. All rights reserved.

The effect of microwave annealing on the electrical characteristics of lanthanum doped bismuth titanate films obtained by the polymeric precursor method

Lanthanum doped bismuth titanate thin films (Bi3.25La0.75Ti3O12-BLT) were produced by the polymeric precursor method and crystallized in a domestic microwave oven and in conventional furnace. Using platinum coated silicon substrates configuration, ferroelectric properties of the films were determined with remanent polarization P-r and a coercive field E-c of 3.9 mu C/cm(2) and 70 kV/cm for the film annealed in the microwave oven and 20 mu C/cm(2) and 52 kV/cm for the film annealed in conventional furnace, respectively. The films annealed in conventional furnace exhibited excellent retention-free characteristics at low infant periods indicating that BLT thin films can be a promise material for use in nonvolatile memories. on the other hand, the pinning of domains wall causes a strong decay at low infant periods for the films annealed in the microwave furnace which makes undesireable the application for future FeRAMS memories. (c) 2005 Elsevier B.V. All rights reserved.

Improvement of the ferroelectric properties of ABO(3) (A= Pb, Ca, Ba; B=Ti, Zr) films

High-quality ABO(3)/LaNiO3 (A = Ph, Ca, Ba; B = Ti, Zr) hetero structures have been grown on LaAlO3 (1 0 0) substrate by the chemical solution deposition method and crystallized by a microwave oven technique. The structural, morphological and electric properties were characterized by means of X-ray diffraction (XRD), atomic force microscope (AFM), and dielectric and ferroelectric measurements. XRD patterns revealed single-phase polycrystalline and oriented thin films whose feature depends on the composition of the films. The AFM surface morphologies showed a smooth and crack-free surface with the average grain size ranging from 116 to 300 nm for both LaNiO3 electrode and the ferroelectric films. Dielectric measurements on these samples revealed dielectric constants as high as 1800 at frequency of 100 KHz. Such results showed that the combination of the chemical solution method with the microwave process provides a promising technique to grow high-quality thin films with good dielectric and ferroelectric properties. (c) 2005 Elsevier Ltd. All rights reserved.

Microstructure and electrical properties of perovskite (Pb, La)TiO3 thin film deposited at low temperature by the polymeric precursor method

High-quality (Pb, La)TiO3 ferroelectric thin films were successfully prepared on a Pt(111)/Ti/SiO2/Si(100) substrate for the first time by spin coating, using the polymeric precursor method. The X-ray diffraction patterns show that the films are polycrystalline in nature. This method allows for low temperature (500 degrees C) synthesis, a high quality microstructure and superior dielectric properties. The effects on the microstructure and electrical properties were studied by changing the La content. The films annealed at 500 degreesC have a single perovskite phase with only a tetragonal or pseudocubic structure. As the La content is increased, the dielectric constant of PLT thin films increases from 570 up to 1138 at room temperature. The C-V and P-E characteristics of perovskite thin films prepared at a low temperature show normal ferroelectric behavior, representing the ferroelectric switching property. The remanent polarization and coercive field of the films deposited decreased due to the transformation from the ferroelectric to the paraelectric phase with an increased La content. (C) 2001 Kluwer Academic Publishers.

Non-Linear Dielectric Properties of PLMN-PT Relaxor Ferroelectrics

Recent investigations on the non-linear (NL) dielectric properties of relaxor ferroelectrics systems, not only as ceramic bodies, but also, in thin films, have showed a significant technological and scientific interest. The most common practical applications of relaxors include multilayer capacitors and actuators. In this work, non-linear dielectric properties of hot-pressed (1-x)[Pb1 -(3/2) yLayMg1/3Nb2/3O3]-xPbTiO3 (PLMN-PT) ferroelectric ceramics were investigated. The NL properties were obtained by using the measurements of the dielectric permittivity of the material as a function of the AC electric field with variable amplitude in the frequency and temperature range of 100 Hz-1 MHz and 50-450 K, respectively. An anomalous behavior of the non-linear dielectric response was observed when submitted to high electric fields levels. The obtained results were analyzed concerning one of the models for the dielectric response of relaxors ferroelectrics materials currently discussed in the literature.

Problems related to the employment of thin uranium films as neutron dosimeters

Thin uranium films built on muscovite mica basis and obsidian samples having known ages were irradiated with thermal neutrons at the IPEN/CNEN reactor, São Paulo. Comparing thin film performance with the obsidian one, it was observed that the latter feel a greater neutron fluence. Nominal fluences at the used facility are in agreement with the results obtained analysing the obsidian samples. A probable hypothesis to explain this disagreement, namely, the uranium loss from the thin films, was ruled out. © 1995.

Ferroelectric switching and dielectric response of P(VDF-TrFE)/PMMA blends

The ferroelectric and the dielectric behaviors of binary blends formed by an equi-molar Poly(vinylidene fluoride trifluoroethylene) copolymer [P(VDF-TrFE)] and Poly(methyl methacrylate) [PMMA] were investigated, for several PMMA compositions. For 40 wt.% or more PMMA contents, the blends are completely amorphous. Below this value, they crystallize in the usual Cm2m polar structure of P(VDF-TrFE). The ferroelectric switching characteristics and the dielectric response of the blends demonstrate the formation of dynamically stable ferroelectric domains. Moreover, the blended films are highly transparent in the optical region. Therefore, thin films of these binary blends are good candidates as host materials for nonlinear optical applications.

Structural, microstructural, optical and electrical properties of (Pb,Ba,Sr)TiO3 films growth on conductive LaNiO3-coated LaAO(3)(100) and Pt/Ti/SiO2/Si substrates

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Study of photoinduced birefringence vs As content in thin GeAsS films

Thin films of GeAsS glass are prepared by e-beam evaporation technique. Photoinduced birefringence (PIB) is studied as function of the As content with concentrations ranging from 10% to 40%. Raman spectroscopy is used as additional tool to explain the corresponding changes undergone by the material system. The breakdown of homopolar bonds is suggested as a possible mechanism of photo induced structural changes leading to the creation of the PIB.

Grain size effect on the structural and dielectric properties of Pb0.85La0.15TiO3 ferroelectric ceramic compound

This paper presents a study of the influence of particle size on the structural and dielectric properties of Pb0.85La0.15TiO3 (PLT15) ferroelectric ceramic samples. The samples were prepared with average grain size of 1.69 +/- 0.08 mu m and 146 +/- 8 nm using, respectively, conventional and spark plasma sintering techniques. A decrease in the tetragonality degree as the crystallite size decreased was explained by an internal stress caused by the existence of a large amount of grain boundaries. The local structure exhibited no significant modification and the dielectric measurements showed a diffuse phase transition and a reduction in the permittivity magnitude at T-m as the average grain size decreased. The nanostructured ceramic sample prepared at a relatively lower temperature and sintering time presented a dielectric constant value of approximately 2000 at room temperature. (c) 2012 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

Correlating phase and microstructure development versus dielectric properties in La3+ and Er3+ co-doped Bi4Ti3O12 ferroelectric ceramics

Bi3.25La0.75-xErxTi3O12 and Bi3.25La0.75Ti3-xErxO12-delta ceramics were prepared and studied in this work in terms of dopant-induced phase and microstructure development as well as dielectric response. The results show that introduction of Er3+ tends to reduce the materials' sintering temperature and average grain size. Moreover, it was noted that in these systems the substitution site of this dopant is controlled by valence state and ionic radii mismatch effects. In particular, even when a nominal substitution of Ti4+ is conceived, here it is found that Er3+ also incorporates at the (Bi,La)(3+) sites. These and other interesting concluding remarks from this work, including Er3+ tolerance, were possible only after comparing, especially, the X-ray diffraction results and the intrinsic ferroelectric characteristics extracted from the dielectric measurements. (C) 2011 Elsevier B.V. All rights reserved.

Structural refinement, optical and microwave dielectric properties of BaZrO3

In this work, barium zirconate (BaZrO3) ceramics synthesized by solid state reaction method and sintered at 1670 degrees C for 4 h were characterized by X-ray diffraction (XRD), Rietveld refinement, and Fourier transform infrared (FT-IR) spectroscopy. XRD patterns, Rietveld refinement data and FT-IR spectra which confirmed that BaZrO3 ceramics have a perovskite-type cubic structure. Optical properties were investigated by ultraviolet-visible (UV-vis) absorption and photoluminescence (PL) measurements. UV-vis absorption spectra suggested an indirect allowed transition with the existence of intermediary energy levels within the band gap. Intense visible green PL emission was observed in BaZrO3 ceramics upon excitation with a 350 nm wavelength. This behavior is due to a majority of deep defects within the band gap caused by symmetry breaking in octahedral [ZrO6] clusters in the lattice. The microwave dielectric constant and quality factor were measured using the method proposed by Hakki-Coleman. The dielectric resonator antenna (DRA) was investigated experimentally and numerically using a monopole antenna through an infinite ground plane and Ansoft's high frequency structure simulator software, respectively. The required resonance frequency and bandwidth of DRA were investigated by adjusting the dimension of the same material. (C) 2011 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

Influence of Molecular Dynamics on the Dielectric Properties of Poly(9,9-di-n-octylfluorene-alt-benzothiadiazole) -Based Devices

This paper uses Nuclear Magnetic Resonance (NMR) and Differential Scanning Calorimetry (DSC) techniques to study the molecular relaxations and phase transitions in poly(9,9-di-n-octylfluorene-alt-benzothiadiazole) (F8BT), which has been extensively studied as the active thin film in organic devices. Besides the identification of the glass transition, beta relaxation and crystal-to-crystal phase transition, we correlate such phenomena with dielectric and transport mechanisms in diodes with F8BT as the active layer. The beta relaxation has been assigned to a transition at about 210 K measured by H-1 and C-13 solid state NMR, and can be attributed to local motions in the side chains. The glass transition has been detected by DSC and H-1 NMR. Dielectric spectroscopy (DS) carried out at low frequencies on diodes made from F8BT show two peaks which are coincident with the above transitions. This allowed us to correlate the electrical changes in the film with the onset of specific molecular motions. In addition, DS indicates a third peak related with a crystal-to-crystal phase transition. Finally, these transitions were correlated with changes in the carrier mobility recorded in thin films and published recently.