Study of photoinduced birefringence vs As content in thin GeAsS films
| Contribuinte(s) |
Universidade Estadual Paulista (UNESP) |
|---|---|
| Data(s) |
15/05/2015
15/05/2015
2013
|
| Resumo |
Thin films of GeAsS glass are prepared by e-beam evaporation technique. Photoinduced birefringence (PIB) is studied as function of the As content with concentrations ranging from 10% to 40%. Raman spectroscopy is used as additional tool to explain the corresponding changes undergone by the material system. The breakdown of homopolar bonds is suggested as a possible mechanism of photo induced structural changes leading to the creation of the PIB. |
| Formato |
671-683 |
| Identificador |
https://www.osapublishing.org/ome/abstract.cfm?uri=ome-3-6-671 Optical Materials Express, v. 3, n. 6, p. 671-683, 2013. 2159-3930 http://hdl.handle.net/11449/123567 http://dx.doi.org/10.1364/OME.3.000671 2998503841917815 1935970066259831 |
| Idioma(s) |
eng |
| Relação |
Optical Materials Express |
| Direitos |
closedAccess |
| Tipo |
info:eu-repo/semantics/article |
