Organizational maintenance repair parts and special tools list : loader, scoop type, pneu-tired, diesel engine driven, hinged frame steer, with 2 1/2 cubic yard multi-purpose bucket (Allis-Chalmers model 645M) FSN 3805-051-9359.

"August 1974."

Organizational, direct support, and general support maintenance manual for loader, scoop type, DED, 4 x 4, articulated, frame steer, 2 1/2 cubic yard bucket (CCE), airborne/airmobile, sectionalized and nonsectionalized, model 950BS, NSN 3805-01-126-7914 ... NSN 3805-01-260-5163.

"August 1991."

Unit, direct support, and general support maintenance repair parts and special tools lists (including depot maintenance repair parts and special tools) : loader, scoop type, DED, 4x4, articulated frame steer, 2-1/2 cubic yard (J.I. Case model MW24C) (NSN 3805-01-150-4814).

"July 1992."

Organizational maintenance repair parts and special tools lists : crane, truck mounted, GED, 3/4 cubic yard, 20 ton, with clamshell, dragline, and backhoe attachments, NSN 3810-00-151-4431, Harnischfeger Corp model M320T2.

Includes index.

Organizational maintenance manual : crane-shovel, truck mounted, 3/4 cubic yards, 20 ton, with clamshell, dragline and backhoe attachments, G.E.D. (Harnischfeger Corp model M320T2), FSN 3810-151-4431.

Includes indexes.

Direct support and general support maintenance repair parts and special tools lists (including depot maintenance repair parts and special tools lists) : crane, truck mounted, GED, 3/4 cubic yard, 20 ton, with clamshell, dragline and backhoe attachments, NSN 3810-00-151-4431, Harnischfeger Corp model M320T2.

Includes indexes.

Operators manual : crane, truck, mounted, 3/4 cubic yards, 20 ton, w/clamshell, dragline and backhoe attachments, G.E.D., (Harnischfeger Corp model M 320T2), FSN 3810-151-4431.

"May 1971."

Operators manual : crane, truck, mounted, 3/4 cubic yards, 20 ton, w/clamshell, dragline, and backhoe attachments, G.E.D. (Harnischfeger Corp model M 320T2), FSN 3810-151-4431.

"May 1971."

Spreading resistance analysis for silicon layers with nonuniform resistivity /

"Issued May 1979."

Characteristics of small-signal capacitances of silicon-on-sapphire MOSFETs

The measured inter-electrode capacitances of silicon-on-sapphire (SOS) MOSFETs are presented and compared with simulation results. It is shown that the variations of capacitances with DC bias differ from those of bulk MOSFETs due to change in body potential variation of the SOS device resulting from electron-hole pair generation through impact ionisation.

Evaluation of silicon twinning in hypo-eutectic Al-Si alloys

It is generally accepted that growth of eutectic silicon in aluminium-silicon alloys occurs by a twin plane re-entrant edge (TPRE) mechanism. It has been proposed that modification of eutectic silicon by trace additions occurs due to a massive increase in the twin density caused by atomic effects at the growth interface. In this study, eutectic microstructures and silicon twin densities in samples modified by elemental additions of barium (Ba), calcium (Ca), yttrium (Y) and ytterbium (Yb) (elements chosen due to a near-ideal atomic radii for twinning) in an A356.0 alloy have been determined by optical microscopy, thermal analysis, X-ray diffractometry (XRD) and transmission electron microscopy (TEM). Addition of barium or calcium caused the silicon structure to transform to a fine fibrous morphology, while the addition of yttrium or ytterbium resulted in a refined plate-like eutectic structure. Twin densities in all modified samples are higher than in unmodified alloys, and there are no significant differences between fine fibrous modification (by Ba and Ca) and refined plate-like modification (by Y and Yb). The twin density in all modified samples is less than expected based on the predictions by the impurity induced twining model. Based on these results it is difficult to explain the modification with Ba, Ca, Y and Yb by altered twin densities alone.

Progress in silicon-based quantum computation

We review progress at the Australian Centre for Quantum Computer Technology towards the fabrication and demonstration of spin qubits and charge qubits based on phosphorus donor atoms embedded in intrinsic silicon. Fabrication is being pursued via two complementary pathways: a 'top-down' approach for near-term production of few-qubit demonstration devices and a 'bottom-up' approach for large-scale qubit arrays with sub-nanometre precision. The 'top-down' approach employs a low-energy (keV) ion beam to implant the phosphorus atoms. Single-atom control during implantation is achieved by monitoring on-chip detector electrodes, integrated within the device structure. In contrast, the 'bottom-up' approach uses scanning tunnelling microscope lithography and epitaxial silicon overgrowth to construct devices at an atomic scale. In both cases, surface electrodes control the qubit using voltage pulses, and dual single-electron transistors operating near the quantum limit provide fast read-out with spurious-signal rejection.

Existence and embeddings of partial Steiner triple systems of order ten with cubic leaves

Denote the set of 21 non-isomorphic cubic graphs of order 10 by L. We first determine precisely which L is an element of L occur as the leave of a partial Steiner triple system, thus settling the existence problem for partial Steiner triple systems of order 10 with cubic leaves. Then we settle the embedding problem for partial Steiner triple systems with leaves L is an element of L. This second result is obtained as a corollary of a more general result which gives, for each integer v greater than or equal to 10 and each L is an element of L, necessary and sufficient conditions for the existence of a partial Steiner triple system of order v with leave consisting of the complement of L and v - 10 isolated vertices. (C) 2004 Elsevier B.V. All rights reserved.

Amorphous structures induced in monocrystalline silicon by mechanical loading

Different amorphous structures have been induced in monocrystalline silicon by high pressure in indentation and polishing. Through the use of high-resolution transmission electron microscopy and nanodiffraction, it was found that the structures of amorphous silicon formed at slow and fast loading/unloading rates are dissimilar and inherit the nearest-neighbor distance of the crystal in which they are formed. The results are in good agreement with recent theoretical predictions. (C) 2004 American Institute of Physics.