Epitaxial lateral overgrowth of cubic GaN by metalorganic chemical vapor deposition

The epitaxial lateral overgrowth (ELO) of cubic GaN by metalorganic chemical vapor deposition has been performed on SiO2-patterned GaN laver. The mechanism of lateral overgrowth is studied It was found that the morphology of ELO GaN stripes strongly depended on the direction of stripe window openings, which was discussed based on the different growth rates of (1 1 1)A and (1 1 1)B. Under the optimized growth condition, single-phase cubic GaN was deposited successfully. The peak position of near-band emission in ELO GaN has a redshift of 13 meV compared with the conventionally grown sample, which may be due to the partial release of stress during the ELO process. (C) 2001 Published by Elsevier Science B.V.

Investigation of periodicity fluctuations in strained (GaNAs)(1)(GaAs)(m) superlattices by the kinematical simulation of x-ray diffraction

Periodicity fluctuations of layer thickness and composition in a superlattice not only decrease the intensity, they also broaden the width of the satellite peaks in the x-ray diffraction pattern. In this letter, we develop a method that is dependent on the width of satellite peaks to assess periodicity fluctuations of a superlattice quickly. A linear relation of the magnitude of fluctuations, peak width and peak order has been derived from x-ray diffraction kinematical theory. By means of this method, periodicity fluctuations in strained (GaNAs)(1)(GaAs)(m) superlattices grown on GaAs substrates by molecular beam epitaxy have been studied. Distinct satellite peaks indicate that the superlattices are of high quality. The N composition of 0.25 and its fluctuation of 20% in a strained GaNxAs1-x monolayer are obtained from simulations of the measured diffraction pattern. The x-ray simulations and in situ observation results of reflection high-energy electron diffraction are in good agreement. (C) 1999 American Institute of Physics. [S0003-6951(99)00828-1].

The enhancement of diffusion by strain of InAs quantum dots in a GaAs matrix

We investigate the annealing behavior of Photoluminescence (PL) from self-assembled InAs quantum dots (QDs) with different thicknesses GaAs cap layers. The diffusion introduced by annealing treatment results in a blue-shift of the QD PL peak, and a decrease in the integrated intensity. The strain present in QDs enhances the diffusion, and the QDs with the cap layers of different thicknesses will experience a strain of different strength. This can lend to a, better understanding of the larger blue-shift of the PL peak of the deeper buried QDs, and the different variance of the full width at half maximum of the luminescence from QDs with the cap layers of different thicknesses.

Calculation of valence subband structures for strained GaInP/AlGaInP quantum wells without axial approximation

Usually in the calculation of valence subband structure for III-V direct bandgap material, axial approximation had been used in the Luttinger-Kohn model to simplify the computational efforts. In this letter, the valence subband structure for the GaInP/AlGaInP strained and lattice-matched quantum wells was calculated without axial approximation, on the basis of 6x6 Luttinger-Kohn Hamiltonian including strain and spin-orbit splitting effects. The numerical simulation results were presented with help of the finite-difference methods. The calculation results with/without axial approximation were compared and the effect of axial approximation on the valence subband structure was discussed in detail. The results indicated that there was a strong warping in the GaInP valence band, and axial approximation can lead to an error when k was not equal to zero, especially for compressively strained and lattice-matched GaInP/AlGaInP quantum wells.

简评美国公布的15个AES候选算法

文章对美国国家标准和技术研究所（ＮＩＳＴ）最近公布的１５个ＡＥＳ候选算法的基本设计思想作了简要介绍，同时也介绍了对这些算法的最新分析结果

分布事务监控器集群框架研究

介绍了在分布事务监控器OnceTX中采用的服务器/集群管理器/应用域管理器的三层集群结构,并给出了两级负载平衡策略和自适应的域间拓扑结构管理算法。它们已在OnceTX中实现,并达到了预期的目的。

土壤干旱对小麦茎秆贮藏物质积累与再转运的影响

在防雨池栽条件下,以小麦旱地品种长武134(抗旱性强)和水地品种(抗旱性弱)为试材,研究干旱对不同抗旱性小麦茎秆及其组成节间花后干物质积累、转运及其对籽粒产量贡献率的影响。结果表明,干旱降低了主茎及其各组成节间干物质的积累量、主茎穗粒重积累量及其灌浆中后期的积累速率,长武134(除其它茎)降低幅度均小于陕253;干旱条件下茎秆贮藏物质的转运并未对籽粒产量产生补偿效应,干旱降低主茎穗粒重积累量与其它茎贮藏物质转运量和转运率较低有密切关系;抗旱性强的小麦品种其它茎的转运量、转运率降低幅度均大于抗旱性弱的小麦品种,从而导致其主茎贮藏物质转运对籽粒产量的贡献率显著降低。