Hybrid FIB milling strategy for the fabrication of plasmonic nanostructures on semiconductor substrates

The optical properties of plasmonic semiconductor devices fabricated by focused ion beam (FIB) milling deteriorate because of the amorphisation of the semiconductor substrate. This study explores the effects of combining traditional 30 kV FIB milling with 5 kV FIB patterning to minimise the semiconductor damage and at the same time maintain high spatial resolution. The use of reduced acceleration voltages is shown to reduce the damage from higher energy ions on the example of fabrication of plasmonic crystals on semiconductor substrates leading to 7-fold increase in transmission. This effect is important for focused-ion beam fabrication of plasmonic structures integrated with photodetectors, light-emitting diodes and semiconductor lasers.

Plasmonic junctions with cucurbit[5]uril 'glue': fabrication of precise sub-nm junctions in gold nanoparticle assemblies

Aggregation of gold nanoparticles with rigid cucurbit[5]uril molecules generates fixed inter-particle separations of 0.91 nm. These nanoparticle assemblies possess discrete plasmonic modes which elucidate nanoscale growth and serve as molecular-recognition based SERS substrates.

Precise Subnanometer Plasmonic Junctions for SERS within Gold Nanoparticle Assemblies Using Cucurbit[n]uril "Glue"

Cucurbit[n]urils (CB[n]) are macrocyclic host molecules with subnanometer dimensions capable of binding to gold surfaces. Aggregation of gold nanoparticles with CB[n] produces a repeatable, fixed, and rigid interparticle separation of 0.9 nm, and thus such assemblies possess distinct and exquisitely sensitive plasmonics. Understanding the plasmonic evolution is key to their use as powerful SERS substrates. Furthermore, this unique spatial control permits fast nanoscale probing of the plasmonics of the aggregates "glued" together by CBs within different kinetic regimes using simultaneous extinction and SERS measurements. The kinetic rates determine the topology of the aggregates including the constituent structural motifs and allow the identification of discrete plasmon modes which are attributed to disordered chains of increasing lengths by theoretical simulations. The CBs directly report the near-field strength of the nanojunctions they create via their own SERS, allowing calibration of the enhancement. Owing to the unique barrel-shaped geometry of CB[n] and their ability to bind "guest" molecules, the aggregates afford a new type of in situ self-calibrated and reliable SERS substrate where molecules can be selectively trapped by the CB[n] and exposed to the nanojunction plasmonic field. Using this concept, a powerful molecular-recognition-based SERS assay is demonstrated by selective cucurbit[n]uril host-guest complexation.

Effect of magnetic bias on Gaussian pulse scattering by stacked nonlinear semiconductor layers

The nonlinear scattering of pulses by periodic stacks of semiconductor layers with magnetic bias has been studied in the self-consistent problem formulation, taking into account mobility of carriers. The three-wave mixing technique has been applied to the analysis of the waveform evolution in the stacks illuminated by two Gaussian pulses with different central frequencies and lengths. The effects of external magnetic bias, and stack physical and geometrical parameters on the properties of the scattered waveforms are discussed. © 2013 IEEE.

Pulsed second harmonic generation by stacks of magnetically biased semiconductor layers

The pulsed second harmonic generation (SHG) by periodic stacks of nonlinear semiconductor layers with external magnetic bias has been studied in the self-consistent problem formulation, taking into account mobility of carriers. The products of nonlinear scattering in the three-wave mixing process are examined. It is demonstrated that the waveform evolution in magnetoactive weakly nonlinear semiconductor periodic structure illuminated by Gaussian pulse is strongly affected by the magnetic bias and collision frequency of the carriers. The effect of nonreciprocity on the SHG efficiency is discussed and illustrated by the examples. © 2013 European Microwave Association.

Wave mixing by periodic nonlinear semiconductor multilayers

The properties of the combinatorial frequency generation and wave scattering by periodic stacks of nonlinear passive semiconductor layers are explored. It is demonstrated that the nonlinearity in passive weakly nonlinear semiconductor medium has the resistive nature associated with the dynamics of carriers. The features of the combinatorial frequency generation and the effects of the pump wave scattering and parameters of the constituent semiconductor layers on the efficiency of the frequency mixing are discussed and illustrated by the examples. © 2013 IEICE.