假单胞菌P_(12)对菲的降解

从武汉石油化工厂的活性污泥中，分离到一株可以以菲为唯一碳源和能源的假单胞菌P_(12)该菌经靛蓝产生法测定有双加氧酶，在菲无机盐培养基中生长时，有3-菲酚物质积累，经检测有一条质粒带。用丝裂霉素C消除质粒后的菌落，失去了降解菲的能力，说明P_(12)对菲的降解功能是由质粒控制的。

Pulse-front matched ultra-broadband optical parametric chirped pulse amplifier for sub-12 fs pulse generation

We propose a LBO-based ultra-broadband chirped pulse optical parametric amplifier employing pulse-front-matching to yield transform-limited sub-12-fs pulses. Measurement of the maximum possible gain bandwidth for the LBO-based OPCPA demonstrates more than 60nm gain bandwidth FWHM. For the generation of TL pulses by the use of this OPCPA, a suitable combination of OPCPA and PFM is first presented. The PFM pump geometry realizes tilt-free signal amplification, and permits this OPCPA to generate TL sub-12-fs pulses.

黄土高原丘陵沟壑区不同土地利用模式对土壤氮素淋溶的影响

通过对黄土高原丘陵沟壑区不同土地利用模式土壤剖面NO-3-N、NH+4-N、有机质和全氮分布的测定,论述黄土高原丘陵沟壑区不同土地利用模式对土壤氮素淋溶的影响,对当地农业发展提出建议。结果表明:在200 cm内土壤NO-3-N最大值都出现在200 cm处,其中日光温室最大为20.36 mg/kg。土壤NH+4-N在200 cm内是较均匀的分布在10~25 mg/kg。不同土地利用模式对土壤剖面土壤NH+4-N、有机质和全氮分布没有影响。随着深度的变化对土壤NH+4-N分布也没有影响。土壤有机质和全氮在土壤剖面的分布是,随着深度的增加而减少,60 cm以下有机质保持在1.07~5.95 g/kg,全氮保持在0.12~0.35 g/kg。根据试验结果得出,土壤氮素淋溶的主要成分是NO-3-N,土壤NO-3-N淋溶程度与降雨、灌溉、施肥量呈正比,在坡地的淋溶较少。

Cyanex302及CA-12萃取稀土动力学的研究

随着萃取技术的不断发展，人们日益要求更加深入的了解萃取过程的机制及其动力学特性。以便有效地控制和强化萃取过程，提高萃取效率，或者利用萃取动力学的差异来实现某些分离嘴过程。尽管许多萃取过程进行得很快，但是人们也发现不少的金属鳌合物萃取体系，其萃取过程相当缓慢。因而这类体系的萃取机制和萃取动力学问题已日益引人注目。除此而外，在设计，放大或改进萃取设备时，研究和掌握有关萃取过程的动力学规律也有十分重要意义。在本文中主要对稀土萃取动力学进行了研究，得到主要结果如下：1．研究了硫代有机磷酸Cyan.ex302萃取饵的动力学。通过测定各种萃取条件对萃取速率的影响，获得了萃取速率方程，并讨论了萃取的控制过程。实验发现萃取剂中的杂质对萃取具有较大的加速作用，这对工业生产具有一定的实际意义。2.用两相滴定法测定了两种新合成的J梭酸萃取剂CA-12和CA-100的某些重要的物理常数。这将有助于深入研究它们的萃取性质及机理。3．用层流恒界面池研究了CA-12萃取La, Gd,Er, Yb和Y的动力学。考察了各种因素对萃取速率的影响，获得了它们的萃取速率方程，实验发现了它们的萃取控速步骤并推测了其萃取机理。4．研究了HEHEHP对CA-12萃取Yb和Y的动力学的影响。实验发现在CA一12中加入少量的HEHEHP后，萃取活化能显著降低，萃取速率明显加快。由于加入HEHEHP后，萃取Yb的活化能的降低要比萃取Y的活化能降低的程度大'，所以使Yb和Y的萃取分离因素加大。5．用两相滴定法研究了HEHEHP萃取铭的机理，CA-12萃取稀土及其相关离子的机理。并计算了它们相应的平衡常数。

24-二甲基戊二稀土化合物的合成

本文叙述了2.4-二甲基戊二烯基稀土金属有机化合物的合成并通过元素分析，红外光谱、核磁共振谱及质谱的鉴定。测定了Gd(2.4-GH_(11))_3的单晶结构，此外还合成了（2.4-GH_(11)K.TMEDA及K_2C_8H_8·3THF并也测定了它们的晶体结构。在所合成化合物的红外光谱中，没有属于C=C双键的吸收峰，表明分子中配位体以η~5形式的大π键体系与稀土金属离子结合，在Ln(2.4-GH_(11))_2Cl·TMF和Ln(2.4-GH_(11))Cl_2·GH_THF的红外光谱中，于1060波数附近出现一强而宽的吸收峰，即化合物中有四氢呋喃分子络合。化合物的室温NMR谱有四个吸收峰，2.4-二甲基戊二烯配位体可能为η~5平面∪或W构型。化合物的水解'H-NMR谱与质谱都证实水解产物为2.4－二甲基－1.3－戊二烯。它是－2.4二甲基戊二烯阴离子水解所得的唯一产物，它表明化合物中的配位体确为2.4－二甲基戊二烯阴离子。(2.4-GH_(11))_2Cl·TMDA配合物晶体结构是应用低温X－射线衍射技术用Nicolet R_3 M/E型四园衍射仪LT－1低温装置并利用重原子法测定的最小二乘法精修至收敛时的一致性因子R=0.055. Rw=0.057。晶体属单斜晶系P21/n空间群。晶胞参数a=11.322(4)A, b=9.242(3)A, c=15.956(5)A. β=106.70(3)分子中2.4－二甲基戊二烯阴离子呈平面∪构型。钾离子与四甲基乙二胺二啮体结合形成的络合阳离子和2.4-二甲基戊二烯阴离子相间排列形成无限链状结构分子。2.4－二甲基戊二烯阴离子的C－C键长明显分为中间与外端C－C键两组。外端组C－C键双性质较强键长较短。表明C3具有负电荷的共振杂化体贡献较大。分子中K－C键最短的是K-C(1.5)。而不是具有较多负电荷的C3－K键。这可能是由于几何因素造成的。K_2C_8H_8·3THF的晶体结构是采用与前者相同的方法测定的。它属三斜晶系，PT空间群，晶胞参数a=10.263(3)A, b=13.157(4)A, c=9.443A, α=87.51(2)°, β=114.93(2)°, γ=76.81(2)°. V=1111.6A, R=0.051. 晶体中负二价的环辛四烯阴离呈平面构型，具有中心对称性，两侧与两中心对称相关的钾离子连接，相邻的非等效的钾离子间通过两四氢呋喃分子的氧原子相连接，从而形成了无限链状结构的分子。环辛四烯反映了Huckel的4n+2芳香性规则。该结构的特别之处在于四氢呋喃分子的氧原子以桥键形式与两个钾离子同时连接。而这种形式的桥键在其它化合物中似还未发现。Go(2.4-GH_(11))_3的晶体结构亦是采用与前述相同的方法测定的。其晶体为三斜晶系，PT空间群，晶胞参数a=12.541A, b=12.853A, c=8.432A, α=91.44°, β=108.61°, γ=117.97°, V=112.54A~3. 结构测定表明，Gd(2.4-GH_(11))_3分子具有C_3h对称性。三个配位体阴离了的九个带负电荷的碳原子近似以三帽三角棱柱形式与钆离子配位。分子中2.4－二甲基戊二烯阴离子的C－C键长－亦分为而组。外端C－C键较中间C－C键强，键长较短，亦表明C3具有较多的负电荷。2.4－二甲基戊二烯阴离子本身近似呈平面∪构型。C2,C4偏离由C1 C3 C5三碳原子构成的平面0.067A。方向上远离中心钆离子。可能在此以离子性为主的化合物中，钆离子与不带电荷的C2 C4间的相互作用有些排斥性质。与Nd(2.4-GH_(11))_3不同的是，在Gd(2.4-GH_(11))_3分子中，Gd-(C(1,5）键最短，而不是Gd-C(3)键。这可能是由于钆离子的半径较小，化合物的空间位阻效应较大所致。

Co(salen)作为辅酶B_(12)模型物及化学修饰电极的电化学研究

本论文从合成Co(salen)开始，对Co(salen)在电化学现场合成辅酶B_(12)模型物的工作进行了尝试。进一步地，用Co(salen)制作了两种化学修饰电极，并对它们的性质进行了较为详细的考察。同时还将这两种修饰电极应用于电催化研究工作，得到了较为满意的结果。

Kinetics of dissociative water adsorption on stepped Si(001), on Si(115), Si(113), Si(5,5,12) and Si(112)

We present photoelectron spectroscopic and low energy electron diffraction measurements of water adsorption on flat Si samples of the orientations (001), (115), (113), (5,5,12) and (112) as well as on curved samples covering continuously the ranges (001)-(117) and (113)-(5,5,12)-(112). On all orientations, water adsorption is dissociative (OH and H) and non-destructive. On Si(001) the sticking coefficient S and the saturation coverage Theta(sat) are largest. On Si(001) and for small miscuts in the [110]-azimuth, S is constant nearly up to saturation which proves that the kinetics involves a weakly bound mobile precursor state. For (001)-vicinals with high miscut angles (9-13 degrees), the step structure breaks down, the precursor mobility is affected and the adsorption kinetics changed. On (115), (113), (5,5,12) and (112), the values of S and Theta(sat) are smaller which indicates that not all sites are able to dissociate and bind water. For (113) the shape of the adsorption curves Theta versus exposure shows the existence of two adsorption processes, one with mobile precursor kinetics and one with Langmuir-like kinetics. On (5,5,12), two processes with mobile precursor kinetics are observed which are ascribed to adsorption on different surface regions within the large surface unit cell. From the corresponding values of S and Theta(sat), data for structure models are deduced. (C) 1997 Elsevier Science B.V.

Electron diffraction and photoemission studies of clean and water-covered Si(5,5,12) and Si(112) surfaces

The structure of silicon surfaces in the orientation range (113)-(5,5,12)-(337)-(112) has been investigated using high resolution LEED and photoemission both on a spherical and on flat samples. We find that Si(5,5,12) [5.3 degrees from (113) and 0.7 degrees from (937)] is the only stable orientation between (113) and (111) and confirm the result of Baski et al. [Science 269, 1556 (1995)] that it has a 2 x 1 superstructure with a very large unit cell of 7.68 x 53.5 Angstrom(2). Adsorption measurements of water on Si(5,5,12) yield a mobile precursor kinetics with two kinds of regions saturating at 0.25 and 0.15 ML which are related to adsorption on different sites. Using these results, a modified structure model is proposed. Surfaces between (113) and (5,5,12) separate into facets of these two orientations; between (5,5,12) and (112), they separate into (5,5,12) and (111) facets. (337) facets in this range may be considered as defective (5,5,12) facets.

Long period two-dimensional gratings for 8-12 mu m quantum well infrared photodetectors

By considering all possible high order diffracted waves, the authors investigate the spectral response of two-dimensional gratings for quantum well infrared photodetectors (QWIPs). A new method is proposed that using long period gratings may improve grating quality and reduce the resulting cross talk in grating-coupled QWIPs. A sensitivity analysis indicates that the influence of variation of the grating constant on the coupling efficiency is less sensitive for the long period gratings than for the short ones. A large coupling efficiency has been demonstrated for long period gratings. The calculated wide grating response spectra are in good agreement with the experiment result. (C) 1996 American Institute of Physics.

12路40Gb/s甚短距离并行光传输信号转换器研究

基于OIF-VSR5-01.0规范,分析了12路并行40Gb/s甚短距离(VSR)光传输转换器模块的实现原理.采用top-down分析方法,使用硬件描述语言verilog,在可编程逻辑器件上完成了时钟数据恢复、基于字节对齐方案的帧同步、信道去斜移、比特间差奇偶校验(BIP)等功能模块的程序设计,实现了SFI-5与OIF-VSR5-01.0电信号格式的相互转换,并在Altera的Stratix II GX 系列的高速现场可编程门阵列(FPGA)上对功能模块进行了功能验证和联合仿真.结果表明所设计的各个功能模块满足系统应用要求,为下一步将系统设计转换为专用集成电路(ASIC)奠定了基础.

核ICA在电流传感器相位差监测中的应用

介绍了核独立分量分析（ICA）的基本原理和算法，并将其用于对电流传感器输出的混合信号进行分离，通过比较分离出的单频测试信号输入前后的相位差，来标定传感器本身的相位差对其检测对象的影响。此外，还采用最大似然法对核ICA的分离效果进行评价。实验证明

A High Speed, 12-Channel Parallel, Monolithic Integrated CMOS OEIC Receiver

The design and fabrication of a high speed, 12-channel monolithic integrated CMOS optoelectronic integrated circuit(OEIC) receiver are reported.Each channel of the receiver consists of a photodetector,a transimpedance amplifier,and a post-amplifier.The double photodiode structure speeds up the receiver but hinders responsivity.The adoption of active inductors in the TIA circuit extends the-3dB bandwidth to a higher level.The receiver has been realized in a CSMC 0.6μm standard CMOS process.The measured results show that a single channel of the receiver is able to work at bit rates of 0.8～1.4Gb/s. Altogether, the 12-channel OEIC receiver chip can be operated at 15Gb/s.

截止波长12μm的InAs0.04Sb0.96/GaAs的熔体外延生长及特性研究

用熔体外延(ME)法在半绝缘(100)GaAs衬底上成功生长出了截止波长为12 μm的InAs0.04Sb0.96外延层.傅立叶变换红外(FTIR)透射光谱揭示,InAsSb合金的禁带宽度被强烈变窄.通过分析InAs0.04Sb0.96外延层载流子浓度的温度依存性表明,其室温禁带宽度为0.105 5 eV,与透射光谱测得的数值很好地一致.通过测量12～300 K的吸收光谱,研究了InAs0.04Sb0.96/GaAs的禁带宽度的温度依存性.霍尔测量得出300 K下样品的电子迁移率为4.47×104 cm2/Vs,载流子浓度为8.77×1015 cm-3;77 K下电子迁移率为2.15×104 cm2/Vs,载流子浓度为1.57×1015 cm-3;245 K下的峰值迁移率为4.80×104 cm2/Vs.