Sound radiation from point-driven shell structures

A numerical study is presented showing the structural response and sound radiation from a range of thin shell structures excited by a point force: a baffled flat plate, a sphere, a family of spheroids and a family of closed circular cylinders. All the structures have the same material properties, thickness and total surface area so the asymptotic modal density is the same. Dramatic differences are shown in the total radiated sound power for the different shells. It was already known that the flat plate and the sphere behave very differently. These results show that the cylinders and, particularly, the spheroids show patterns that are not intermediate between the two but instead display new features: in certain frequency ranges the radiated sound power can be at least an order of magnitude greater than either the plate or the sphere. © 2013 Elsevier Ltd.

Calibrating the Gaussian multi-target tracking model

We present novel batch and online (sequential) versions of the expectation-maximisation (EM) algorithm for inferring the static parameters of a multiple target tracking (MTT) model. Online EM is of particular interest as it is a more practical method for long data sets since in batch EM, or a full Bayesian approach, a complete browse of the data is required between successive parameter updates. Online EM is also suited to MTT applications that demand real-time processing of the data. Performance is assessed in numerical examples using simulated data for various scenarios. For batch estimation our method significantly outperforms an existing gradient based maximum likelihood technique, which we show to be significantly biased. © 2014 Springer Science+Business Media New York.

A Single-Fundamental-Mode Photonic Crystal Vertical Cavity Surface Emitting Laser

Single-fundamental-mode photonic crystal (PhC) vertical cavity surface emitting lasers (VCSEL) are produced and their single-fundamental-mode performances are investigated and demonstrated. A two-dimensional PhC with single-point-defect structure is fabricated using UV photolithography and inductive coupled plasma reactive ion etching on the surface of the VCSEL's top distributed Bragg-reflector. The PhC VCSEL maintains single-fundamental-mode operating with output power 1.7 mW and threshold current 2.5 mA. The full width half maximum of the lasing spectrum is less than 0.1 nm, the far field divergence angle is less than 10 degrees and the side mode suppression ratio is over 35 dB. The device characteristics are analyzed based on the effective index model of the photonic crystal fiber. The experimental results agree well with the theoretical expectation.

Fabrication and Characterization of High Power InGaN Blue-Violet Lasers with an Array Structure

InGaN/GaN multi-quantum-well-structure laser diodes with an array structure are successfully fabricated on sapphire substrates. The laser diode consists of four emitter stripes which share common electrodes on one laser chip. An 800-mu m-long cavity is formed by cleaving the substrate along the < 1 (1) over bar 00 >. orientation using laser scriber. The threshold current and voltage of the laser array diode are 2A and 10.5 V, respectively. A light output peak power of 12W under pulsed current injection at room temperature is achieved. We simulate the electric properties of GaN based laser diode in a co-planar structure and the results show that minimizing the difference of distances between the different ridges and the n-electrode and increasing the electrical conductivity of the n-type GaN are two effective ways to improve the uniformity of carrier distribution in emitter stripes. Two pairs of emitters on a chip are arranged to be located near the two n-electrode pads on the left and right sides, and the four stripe emitters can laser together. The laser diode shows two sharp peaks of light output at 408 and 409 nm above the threshold current. The full widths at half maximum for the parallel and perpendicular far field patterns are 8 degrees and 32 degrees, respectively.

High-performance 2 mm gate width GaNHEMTs on 6H-SiC with output power of 22.4 W @ 8 GHz

Optimized AlGaN/AlN/GaN high electron mobility transistors (HEMTs) structures were grown on 2-in semi-insulating (SI) 6H-SiC substrate by metal-organic chemical vapor deposition (MOCVD). The 2-in. HEMT wafer exhibited a low average sheet resistance of 305.3 Omega/sq with a uniformity of 3.85%. The fabricated large periphery device with a dimension of 0.35 pm x 2 nun demonstrated high performance, with a maximum DC current density of 1360 mA/mm, a transconductance of 460 mS/mm, a breakdown voltage larger than 80 V, a current gain cut-off frequency of 24 GHz and a maximum oscillation frequency of 34 GHz. Under the condition of continuous-wave (CW) at 9 GHz, the device achieved 18.1 W output power with a power density of 9.05 W/mm and power-added-efficiency (PAE) of 36.4%. While the corresponding results of pulse condition at 8 GHz are 22.4 W output power with 11.2 W/mm power density and 45.3% PAE. These are the state-of-the-art power performance ever reported for this physical dimension of GaN HEMTs based on SiC substrate at 8 GHz. (c) 2008 Elsevier Ltd. All rights reserved.

A programmable SIMD vision chip for real-time vision applications

A programmable vision chip for real-time vision applications is presented. The chip architecture is a combination of a SIMD processing element array and row-parallel processors, which can perform pixel-parallel and row-parallel operations at high speed. It implements the mathematical morphology method to carry out low-level and mid-level image processing and sends out image features for high-level image processing without I/O bottleneck. The chip can perform many algorithms through software control. The simulated maximum frequency of the vision chip is 300 MHz with 16 x 16 pixels resolution. It achieves the rate of 1000 frames per second in real-time vision. A prototype chip with a 16 x 16 PE array is fabricated by the 0.18 mu m standard CMOS process. It has a pixel size of 30 mu m x 40 mu m and 8.72 mW power consumption with a 1.8 V power supply. Experiments including the mathematical morphology method and target tracking application demonstrated that the chip is fully functional and can be applied in real-time vision applications.

Wavelength conversion based on degenerate-four-wave-mixing with continuous-wave pumping in silicon nanowire waveguide

We present a comprehensive numerical study on the all-optical wavelength conversion based on the degenerate four-wave-mixing with continuous-wave pumping in the silicon nanowire waveguide. It is well known that the conversion efficiency and the 3-dB bandwidth can be greatly affected by the phase-matching condition. Through proper design of the waveguide cross-section, its dispersion property can be adjusted to satisfy the phase-matching condition and therefore effective wavelength conversion can be achieved in a large wavelength range. Generally, the group velocity dispersion plays a dominant role in the wavelength conversion. However, the fourth-order dispersion takes an important effect on the wavelength conversion when the group velocity dispersion is near the zero-point. Furthermore, the conversion efficiency and the 3-dB bandwidth can also be affected by the interactive length and the initial pump power. Through the numerical simulation, the optimal values for the interactive length and the initial pump power, which are functions of the propagation loss, are obtained to realize the maximum conversion efficiency. (C) 2008 Elsevier B.V. All rights reserved.

Effects of waveguide length and pump power on the efficiency of wavelength conversion in silicon nanowire waveguides

We point out the use of a wrong definition for conversion efficiency in the literature and analyze the effects of the waveguide length and pump power on conversion efficiency according to the correct definition. The existence of the locally optimal waveguide length and pump power is demonstrated theoretically and experimentally. Further analysis shows that the extremum of conversion efficiency can be achieved by global optimization of the waveguide length and pump power simultaneously, which is limited by just the linear propagation loss and the effective carrier lifetime. (C) 2009 Optical Society of America

Low-threshold-current and high-out-power 660 nm laser diodes with a p-GaAs current blocking layer for DVD-RAM/R

We investigate a new structure of high-power 660-nm AlGaInP laser diodes. In the structure, a p-GaAs layer is grown on the ridge waveguide serving as the current-blocking layer, and nonabsorbing windows are only fabricated near the cavity facets to increase the catastrophic-optical-damage level. Stable fundamental mode operation was achieved at up to 80 mW without kinks, and the maximum output power was 184 mW at 22 degrees C. The threshold current was 40 mA.

High average power and short pulse duration continuous wave mode-locked Nd : GdVO4 laser with a semiconductor absorber mirror

Passive mode locking of a solid-state Nd:GdVO4 laser is demonstrated. The laser is mode locked by use of a semiconductor absorber mirror (SAM). A low Nd3+ doped Nd:GdVO4 crystal is used to mitigate the thermal lens effect of the laser crystal at a high pump power. The maximum average output power is up to 6.5 W, and the pulse duration is as short as 6.2 ps. The optic-to-optic conversion efficiency is 32.5% and the repetition rate is about 110 MHz.

1-mm gate periphery AlGaN/AIN/GaN HEMTs on SiC with output power of 9.39 W at 8 GHz

AlGaN/AlN/GaN high electron mobility transistor (HEMT) structures with high mobility GaN channel layer were grown on 50 min diameter semi-insulating (SI) 6H-SiC substrates by metalorganic chemical vapor deposition and large periphery HEMT devices were fabricated and characterized. High two-dimensional electron gas mobility of 2215 cm(2)/V s at room temperature with sheet electron concentration of 1.044 x 10(13)/cm(2) was achieved. The 50 mm diameter HEMT wafer exhibited a low average sheet resistance of 251.0 Omega/square, with the resistance uniformity of 2.02%. Atomic force microscopy measurements revealed a smooth AlGaN surface with a root-mean-square roughness of 0.27 nm for a scan area of 5 mu mi x 5 pm. The 1-mm gate width devices fabricated using the materials demonstrated a very high continuous wave output power of 9.39 W at 8 GHz, with a power added efficiency of 46.2% and power gain of 7.54 dB. A maximum drain current density of 1300 mA/mm, an extrinsic transconductance of 382 mS/mm, a current gain cutoff frequency of 31 GHz and a maximum frequency of oscillation 60 GHz were also achieved in the same devices. (C) 2007 Elsevier Ltd. All rights reserved.

High-average-power and high-conversion-efficiency continuous wave mode-locked Nd : YVO4 laser with a semiconductor absorber mirror

A high-power continuous wave (cw) mode-locked Nd:YVO4 solid-state laser was demonstrated by use of a semiconductor absorber mirror (SAM). The maximum average output power was 8.1 W and the optic-to-optic conversion efficiency was about 41 %. At the maximum incident pump power, the pulse width was about 8.6 ps and the repetition rate was 130 MHz. Experimental results indicated that this absorber was suitable for high power mode-locked solid-state lasers. (C) 2006 Elsevier Ltd. All rights reserved.

Finite-difference time-domain analysis of deformed square cavity filters with a traveling-wave-like filtering response by mode coupling

An add-drop filter based on a perfect square resonator can realize a maximum of only 25% power dropping because the confined modes are standing-wave modes. By means of mode coupling between two modes with inverse symmetry properties, a traveling-wave-like filtering response is obtained in a two-dimensional single square cavity filter with cut or circular corners by finite-difference time-domain simulation. The optimized deformation parameters for an add-drop filter can be accurately predicted as the overlapping point of the two coupling modes in an isolated deformed square cavity. More than 80% power dropping can be obtained in a deformed square cavity filter with a side length of 3.01 mu m. The free spectral region is decided by the mode spacing between modes, with the sum of the mode indices differing by 1. (c) 2007 Optical Society of America.

Grating optimization and experiment on high-power distributed feedback lasers

Coupling coefficient is an important parameter for distributed feedback lasers. Modified coupled-wave equations are used to calculate the effect of grating shape on coupling coefficient of the second-order gratings. Corresponding devices demonstrate that the maximum kink-free power per facet reaches 50 mW and the sidemode suppression ratio is 36 dB.

High-power AlGaInP laser diodes with current-injection-free region near the laser facet

A high-power AlGaInP laser diode with current-injection-free region near the facet is successfully fabricated by metaorganic chemical vapor deposition (MOCVD) using the (100) direction n-GaAs substrates with a misorientation of 15 deg toward the (011) direction. The maximum continuous wave output power is about 90 mW for the traditional structure. In comparison, the maximum output power is enhanced by about 67%, and achieves 150 mW for LDs with current-infection-free regions. The fundamental transverse-mode operation is obtained up to 70 mW. Output characteristics at high temperatures are also improved greatly for an LD with a current-injection-free region, and the highest operation temperature is 70 C at 50 mW without kink. The threshold current is about 33 mA, the operation current and the slope efficiency at 100 mW are 120 mA and 0.9 mW/mA, respectively. The lasing wavelength is 658.4 nm at room-temperature 50 mW. (c) 2006 Society of Photo-Optical Instrumentation Engineers.