Dielectric properties of pure and lanthanum modified bismuth titanate thin films

We investigated the dielectric properties of pure and lanthanum modified bismuth titanate thin films obtained by the polymeric precursor method. X-ray diffraction of the film annealed at 300 degrees C for 2h indicates a disordered structure. Lanthanum addition increases gradually the dielectric permittivity of films, keeping unchanged their loss tangent. From C-V curve we can see no hysteresis behavior indicating the absence of domain structure. The decrease in the conductivity for the heavily doped Bi4Ti3O12 (BIT) must be associated to the unidentified crystal defects. For comparison, dielectric properties of crystalline BIT film were also investigated. (C) 2007 Published by Elsevier B.V.

The dielectric suppress and the control of semiconductor non-Ohmic feature of CaCu3Ti4O12 by means of tin doping

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Dielectric properties of soft chemical method derived CaCu3Ti4O12 thin films onto Pt/TiO2/Si(100) substrates

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Structural, dielectric and ferroelectric properties of Nb-doped PZT thin films produced by oxide precursor method

Recently, was proposed a chemical method for preparation of ferroelectric thin films based on oxide precursors. In this work, PZT thin films were prepared to attest the viability of this method for cation-substitution. In this study, a small concentration of Nb (5 mol%) was selected as substitute of B-site in ABO 3 structure of PZT. Dielectric and ferroelectric properties of PZT films were studied as a function of cation-substitution. Results for Nb-PZT were compared with PZT films undoped. The values of dielectric constant, at typical 100 kHz frequency, were 358 and 137, for PZT and Nb-PZT films respectively. Remanent polarizations of these films were respectively 7.33 μ C/cm 2 and 13.3 μ C/cm 2 , while the measured coercive fields were 101 kV/cm and 93 kV/cm. As a result, changes on observed dielectric and ferroelectric values confirm the Nb substitution in PZT thin film produced by oxide precursor method. © 2002 Taylor & Francis.

Crystallographic, dielectric and optical properties of SrBi 2Ta2O9 thin films prepared by the polymeric precursor method

Strontium bismuth tantalate thin films were prepared on several substrates (platinized silicon (Pt/Ti/SiO 2 /Si), n -type (100)-oriented and p -type (111)-oriented silicon wafers, and fused silica) by the solution deposition method. The resin was obtained by the polymeric precursor method, based on the Pechini process, using strontium carbonate, bismuth oxide, and tantalum ethoxide as starting reagents. Characterizations by XRD and SEM were performed for structural and microstructural evaluations. The electrical measurements, carried on the MFM configuration, showed P r values of 6.24 μC/cm 2 and 31.5 kV/cm for the film annealed at 800 C. The film deposited onto fused silica and treated at 700 C presented around 80% of transmittance. © 2002 Taylor & Francis.

Dielectric and viscoelastic properties of cross-linked polyethylene aged under multi stressing conditions

Different measurements were performed in cross-linked polyethylene (XLPE) employed as insulating material in coaxial cables that were field-aged and laboratory-aged under multi-stressing conditions at room temperature. Samples were peeled from the XLPE cable insulation in three different positions: just below the external semiconductor layer (outer layer), in the middle (middle layer) and just above the internal semiconductor layer of the cable (inner layer). The imaginary part of the electric susceptibility showed three peaks that obey the Dissado-Hill model. For laboratory-aged XLPE samples peeled from the inner and from the middle positions the peak at very low frequency region increased while in samples from the outer position a quasi-DC conduction process was observed. In medium frequency range a broadening of the peak was observed for all samples. Viscoelastic properties determined through dynamic mechanical analysis suggested that the aging generates processes that promoted changes of the crystallinity and the cross-linking degrees of the polymer. Fourier transform infrared spectroscopy (FTIR) measurements revealed an increase of oxidation products (esters), evidence of polar residues of the bow-tie tree and the presence of cross-linking by-products (acetophenone). Optical and scanning electronic microscope (SEM) measurements in aged samples revealed the existence of voids and bow-tie trees that were formed during aging in the middle region of the cable.

Dielectric and ferroelectric properties of PZT and PT thin films for saw sensors applications

It is very important for the building of the SAW devices to study dielectric and ferroelectrics properties because every SAW device is based in piezoelectric effect that it is made up to transform an electric sign in the mechanical or acoustic sign and a mechanical or acoustic sign in an electric sign. Thus, the purpose of the present work is to prepare PbZr 0,53Ti0.47O3 (PZT) and PbTiO3 (PT) thin films on the Si (100) substrates across spin-coating using a chemical method based in polymeric precursors. After conventional treatment in the furnace, the films were characterized by impedance spectroscopy and hysteresis loops to know its dielectric and ferroelectric properties.

Ferroelectric switching and dielectric response of P(VDF-TrFE)/PMMA blends

The ferroelectric and the dielectric behaviors of binary blends formed by an equi-molar Poly(vinylidene fluoride trifluoroethylene) copolymer [P(VDF-TrFE)] and Poly(methyl methacrylate) [PMMA] were investigated, for several PMMA compositions. For 40 wt.% or more PMMA contents, the blends are completely amorphous. Below this value, they crystallize in the usual Cm2m polar structure of P(VDF-TrFE). The ferroelectric switching characteristics and the dielectric response of the blends demonstrate the formation of dynamically stable ferroelectric domains. Moreover, the blended films are highly transparent in the optical region. Therefore, thin films of these binary blends are good candidates as host materials for nonlinear optical applications.

Dielectric behavior of XLPE aged under multi-stressing conditions

In this work fresh cables were laboratory aged under multi-stressing conditions at room temperature. Foils were peeled from cables, with approximately 150 ?m thickness, from the outer, middle and inner positions of the XLPE cable insulating layer. For samples obtained from the outer cable layer position, an increasing near-permanent electrical conduction process with aging time was observed. At the middle and inner cable layer positions a flat-loss relaxation process was observed becoming a dominating process on the ageing. In addition, PEA results confirmed that degradation in the outer region of the XLPE cables arises from the simultaneous presence of dipoles and injected space charge that distorts the internal electric field on the ageing.

Relationship between the dielectric and mechanical properties and the ratio of epoxy resin to hardener of the hybrid thermosetting polymers

The relationship between the dielectric properties (dielectric constant, ε′, and loss factor, ε; activation energy, E a) and the ratio of epoxy resin (OG) to hardener of the epoxy resin thermosetting polymers was investigated. The amplitude of the ε″ peak decreases with increasing OG content until about 73 wt.% and slightly increases at higher OG content. The temperature of the position of the ε″ peak increases with the increasing of OG content, reaching maximum values for compositions in the range of 67 and 73 wt.%, and then it decreases sharply at higher OG content. The activation energy obtained from dielectric relaxation increased with increasing wt.% OG up to around 70 wt.%. Further increase in concentration of OG up to 83 wt.% reduced E a. The curves of tensile modulus and fracture toughness mechanical properties as a function of OG content presented a similar behavior. ©2006 Sociedade Brasileira de Química.

Dielectric properties of Pb Nb2 O6 ferroelectric ceramics at cryogenic temperatures

Complex dielectric permittivity measurements in Pb Nb2 O6 ceramics were performed in a frequency and temperature range of 1 kHz-1 MHz and from 15 to 900 K, respectively. The results revealed two dielectric anomalies showing typical characteristics of relaxor ferroelectric materials at cryogenic temperatures. Comparison with other tetragonal tungsten bronze (TTB) structure-type materials suggests the existence of successive phase transitions, which until now were not reported. The observed low temperature dielectric behaviors seem to be due to intrinsic physical characteristics related to the TTB structure. © 2007 American Institute of Physics.

Structural and dielectric properties of relaxor Sr0.5Ba 0.5Bi2Nb2O9 ceramic

Sr0.5Ba0.5Bi2Nb2O 9 ceramic was prepared by a conventional solid state reaction method and studied using X-ray powder diffraction and dielectric measurements. At room temperature, an orthorhombic structure was confirmed and their parameters were obtained using the Rietveld method. Dielectric properties were studied in a broad range of temperatures and frequencies. Typical relaxor behaviour was observed with strong dispersion of the complex relative dielectric permittivity. The temperature of the maximum dielectric constant Tm decreases with increasing frequency, and shifts towards higher temperature side. The activation energy Ea≈0·194±0·03 eV and freezing temperature Ta≈371±2 K values were found using the Vogel-Fulcher relationship. Conduction process in the material may be due to the hopping of charge carriers at low temperatures and small polarons and/or singly ionised oxygen vacancies at higher temperatures. © 2010 Maney Publishing.

Dielectric tunability in (1-x)[Pb(Mg 1/3Nb 2/3)O 3]-xPbTiO 3 ceramics for tunable devices application

The dielectric properties of the 0.65[Pb(Mg 1/3Nb 2/3)O 3]-0.35PbTiO 3 ferroelectric ceramic composition were investigated viewing the capability to be used for tunable microwave applications. The dielectric response has been studied for three selected temperatures (300 K, 370 K and 400 K), below the paraelectric- ferroelectric phase transition temperature, as a function of the applied 'bias' electric field. The obtained dielectric tunability was found to be around 60 %, under an electric field of 19 kV/cm, which makes the studied ceramic composition an excellent candidate for application in the electro-electronic industry, as tunable devices. © 2010 IEEE.

Microscopic and dielectric analyses of vanadium and tungsten modified barium zirconium titanate ceramics

Dielectric spectroscopy was used in this study to examine polycrystalline vanadium and tungstendoped BaZr 0.1Ti 0.90O 3 (BZT10:2V and BZT10:2W) ceramics obtained by the mixed oxide method. According to X-ray diffraction analyses, addition of vanadium and tungsten lead to ceramics free of secondary phases. SEM analyses reveal that both dopants result in slower oxygen ion motion and consequently lower grain growth rate. Temperature dependence dielectric study showed normal ferroelectric to paraelectric transition well above the room temperature for the BZT10 and BZT10:2V ceramics. However, BZT10:2W ceramic showed a relaxor-like behavior near phase transition characterized by the empirical parameter γ. Piezoelectric force microscopy images reveals that the piezoelectric coefficient is strongly influenced by type of donor dopant suggesting promising applications for dynamic random access memories and data-storage media. Copyright © 2010 American Scientific Publishers All rights reserved.

Microstructure, crystalline phase, and dielectric property analyses of TiO2 composition with ZrO2 addition

For microwave applications, including mobile and satellite communications, ceramic resonators should have a high dielectric constant, low dielectric losses, and high frequency stability. In this sense, TiO2-ZrO 2 ceramics have been investigated as a function of sintering behavior, phase composition, and microstructure. The ceramics were densified reaching a value of about 86% of theoretical density at 1400°C sintering temperature. The ceramics are prepared by mixing raw materials with the following TiO2-ZrO2 weight % ratio: 100 to 0, 90 to 10, and 80 to 20, respectively. The measured dielectric constants are between 79 and 88 values, while the quality factor due to dielectric losses are between 2820 and 5170. These results point out the influence of Ti/Zr ratio on controlling the dielectric properties. © (2010) Trans Tech Publications.