Studies on morphogenesis and cellular interactions of Rana grylio virus in an infected fish cell line

A pathogenic virus (RGV), isolated from diseased pig frog Rana grylio with lethal syndrome, was investigated with regard to morphogenesis and cellular interactions in EPC cells, a cell Line from fish. Different stages of virus amplification, maturation and assembly were observed at nucleus, cytoplasm and cellular membranes. The matured virus particles, were not only distributed diffusely in nucleus, cytoplasm and cellular surface, but also aggregated as pseudocrystalline arrays in the cytoplasm. Virions were released by budding from the plasma membranes, or following cell lysis. Various types of cell damage, such as small vacuoles, spherical inclusions, and swollen and empty mitochondria, were also found. Some typical characteristics of RGV, such as the symmetrical shape of the virions, replication process involving both nuclear and cytoplasmic phases, budding release from cellular membrane and intracellular membrane, viromatrix and paracrystalline aggregation in cytoplasm, and its acute pathogenic effects, were observed to be similar to that of other iridoviruses. Therefore, the RGV appears to be a member of the Iridoviridae based on these studies. (C) 1999 Elsevier Science B.V. All rights reserved.

Novel room temperature photoluminescence of Ge/Si islands in multilayer structure grown on silicon-on-insulator substrate

Novel room temperature photoluminescence (PL) of the Ge/Si islands in multilayer structure grown on silicon-on-insulator substrates is investigated. The cavity formed by the mirrors at the surface and the buried SiO2 interface has a strong effect on the PL emission. The peak position is consistent with the theoretical calculation and independent of the exciting power, which is the evidence of cavity effect on the room temperature photoluminescence. (C) 2004 Elsevier B.V. All rights reserved.

Investigations on optical properties of AlGaInN epilayers grown by mocvd

Microscopic luminescence and Raman scattering study was carried on AIInGaN quaternary alloy. Based on the analyses of SEM image and cathodoluminescence spectra measured around V-defects, the correlation between V-defect formation and indium segregation was clarified. Raman scattering of thin AlInGaN epilayers was investigated by using the short wavelength excitation of 325nm laser line. The frequency shift of A(1)(LO) phonon induced by the change of Al composition in alloy was observed. The Raman scattering of LO phonons was found to be resonantly enhanced with outgoing resonance, and it is attributed to the cascade-like electron-multiphonon interaction mechanism.

Tuning the resonant wavelength of long period fiber gratings by etching the fiber's cladding

In this paper the resonant wavelength of a long period fiber grating (LPG) is tuned toward longer wavelength by etching the fiber, For LP04 and LP05 cladding modes', the tuning ranges of 23 and 81 nm are achieved, respectively. Also the dependence of the resonant wavelength on the cladding radius of LPG is theoretically simulated. (C) 2001 Elsevier Science B,V. All rights reserved.

Substrate dependence of InGaAs quantum dots grown by molecular beam epitaxy

A systematic study of self-organized In0.5Ga0.5As quantum dots (QDs) and islands grown by molecular beam epitaxy on (100) and (n11) A/B GaAs substrates is given, where n varies from 1 to 5. Low-temperature photoluminescence results show that the properties of the dots have a strong dependence on the substrate orientation as revealed by atomic force microscopy, consistent with the differences in size, shape, and distribution of QDs on different substrates. From (100) to (111) surface, the photoluminescence peak position of dots on B surfaces is found to blueshift more than that on A surfaces. QDs are also formed on (511) A surface. The positional distribution of these dots exhibits a wavy shape, which is related to the corrugated structure of this surface. Two kinds of islands are formed on (111) A surface, but further work is needed to explain the mechanism of these islands. (C) 2001 American Vacuum Society.

Effect of In-mole-fraction in InGaAs overgrowth layer on self-assembled InAs/GaAs quantum dots

We have studied the optical and structural properties of InAs/GaAs QDs covered by InxGa1-xAs (0 less than or equal to x less than or equal to 0.3) layer using transmission electron microscopy, photoluminescence (PL) spectra and atomic force microscopy. We find that the strain reduces in the growth direction of InAs islands covered by InGaAs instead of GaAs layer. Significant redshift of PL peak energy and narrowing of PL linewidth are observed for the InAs QDs covered by 3 nm thick InGaAs layer. In addition, atomic force microscopy measurements indicate that the InGaAs islands will nucleate on top of InAs quantum dots, when 3 nm In0.3Ga0.7As overgrowth layer is deposited. This result can well explain the PL intensify degradation and linewidth increment of quantum dots with a higher In-mole-fraction InGaAs layer. The energy gap change of InAs QDs covered by InGaAs may be explained in terms of reducing strain, suppressing compositional mixing and increasing island height. (C) 2000 Elsevier Science B.V. All rights reserved.

Synthesis and luminescence of CdS/ZnS core/shell nanocrystals

CdS/ZnS core/shell nanocrystals were prepared from an aqueous/alcohol medium. A red shift of the absorption spectrum and an increase of the room temperature photoluminescence intensity accompanied shell growth.

Size quantization effects in InAs self-assembled islands on InP(001) at the onset of 2D-to-3D transition

Photoluminescence spectroscopy has been used to investigate self-assembled InAs islands in InAlAs grown on InP(0 0 1) by molecular beam epitaxy, in correlation with transmission electron microscopy. The nominal deposition of 3.6 monolayers of InAs at 470 degrees C achieves the onset stage of coherent island formation. In addition to one strong emission around 0.74 eV, the sample displaces several emission peaks at 0.87, 0.92. 0.98, and 1.04 eV. Fully developed islands that coexist with semi-finished disk islands account for the multipeak emission. These results provide strong evidence of size quantization effects in InAs islands. (C) 1999 Elsevier Science B.V. All rights reserved.

InAs/ln(0.52)Al(0.48)As quantum wire structure with the specific layer-ordering orientation on InP(001)

Quantum wires were formed in the 6-period InAs/In0.52Al0.48As structure on InP(0 0 1) grown by molecular beam epitaxy. The structure was characterized with transmission electron microscopy. It was found that the lateral periodic compositional modulation in the QWR array was in the [1 (1) over bar 0] direction and layer-ordered along the specific orientation deviating from the [0 0 1] growth direction by about 30 degrees. This deviating angle is consistent with the calculation of the distribution of elastic distortion around quantum wires in the structure using the finite element technique. (C) 1999 Elsevier Science B.V. All rights reserved.

p-type co-doping study of GaN by photoluminescence

Photoluminescence measurements were performed on p-type co-doping effects of C, As, and Mg in GaN. The dopants were incorporated into GaN by ion implantation performed at 77 K. We find that the 3.42 eV luminescence line is sensitive to hole concentration, and propose that after cartful calibration the 3.42 eV line may be used as a probe to measure hole concentration in GaN. Simply doping one kind of accepters will not result in holes, while co-doping can substantially improve p-type doping efficiency. As + C and As + Mg co-doping induce an acceptor level of 180 meV above the valence band. Mg + C co-doping is the most promising method for p-type doping, the related acceptor level is determined to be as shallow as 130 meV. The improvement of the doping efficiency by co-doping is probably due to the decrease of the acceptor ionization energy. (C) 1999 Elsevier Science B.V. All rights reserved.

Uniformity enhancement of the self-organized InAs quantum dots

Growth interruption was introduced after the deposition of GaAs cap layer, which is thinner than the height of quantum dots. Uniformity of quantum dots has been enhanced because the full-width of half-maximum of photoluminescence decrease from 80 to 27 meV in these samples as the interruption time is increased. Meanwhile, we have observed that the peak position of photoluminescence is a function of interruption time, which can be used to modulate energy level of quantum dots. All of the phenomenon mentioned above can be attributed to the diffusion of In atoms from the tops of InAs islands to the top of GaAs cap layer caused by the difference between the surface energies of InAs and GaAs. (C) 1999 Elsevier Science B.V. All rights reserved.

MOVPE growth of GaN and LED on (111) MgAl2O4

The growth of wurtzite GaN by low-pressure metalorganic vapor-phase epitaxy on (1 1 1) magnesium aluminate (MgAl2O4) substrates have been studied. The morphological, crystalline, electrical and optical properties are investigated. A p-n junction GaN LED was fabricated on the MgAl2O4 substrate. (C) 1998 Elsevier Science B.V. All rights reserved.

Dependence of photoluminescence induced by carbon contamination on GeSi structure

We studied the dependence of photoluminescence induced by carbon contamination on the Ge/GeSi structure. It is found that a carbon and silicon defect complex may be formed in a special structure by opening the in situ high-energy electron diffraction test during growth. There is an important difference in the dependence of photoluminescence on the temperature between the defect complex in our samples and in bulk Si. where the impurity-active center is generated by high-energy electron (about several MeV) irradiation. The quenching temperature of the photoluminescence from the impurity-active center is higher in our Ge/GeSi structure than in bulk Si. The defect complex may serve as an impurity-active center for a possible application in making Si-based light-emitting diodes whose wavelength is around 1.3 mu m in the window of optical communication. (C) 1998 Elsevier Science B.V. All rights reserved.

密码Hash函数相关问题研究

密码Hash函数是信息安全密码学的一个重要研究内容，是一类广泛应用的密码算法，用于把任意长度的字符串压缩成特定长度的字符串，同时需要在各种应用环境下满足一定的安全要求如抗碰撞，抗原象等。Hash函数广泛应用于数字签名、可证明安全、密码算法的构造以及重要的安全协议中。对Hash函数进行研究、分析Hash函数的安全性、构造安全高效的Hash算法有着重要意义。 本文研究了Hash函数的安全性质、设计结构以及常用分析方法，研究了Hash函数扩散层部件的设计，并且对MAME压缩函数算法进行了分析，取得了如下研究结果： (1) 研究了密码Hash函数的安全性质、设计结构、设计原理和常用分析方法，归纳总结了51个SHA-3候选算法的设计特点、设计原理和实现效率，研究了最新的分析进展，总结了新的攻击方法如REBOUND攻击等。NIST仿照AES的征集过程的SHA-3竞赛，目标是选出新的Hash函数标准SHA-3。进入第一轮的候选算法有51个，经过筛选选出其中的14个作为当前第二轮的候选算法。这些新Hash算法是由世界各国密码学家精心设计，是Hash函数领域最新设计思想的集体展示，当中涌现出很多新的设计结构和设计方法，同时激励密码学家发展新的分析方法。 (2) 设计并实现了了有限域上的扩散层构造算法以及扩散层分支数测试的算法，并针对多元域上的扩散层矩阵，本文使用编码理论，利用GRS码和柯西矩阵等设计了多元域扩散层矩阵的构造算法；使用有限域上的高斯消元法和线性码的性质设计了多元域扩散层矩阵的分支数的检测；设计了高效的二元域扩散层矩阵分支数测试算法。 (3) 针对MAME压缩函数算法进行差分分析，MAME算法是SHA-3候选算法Lesamnta的前身，于CHES 2007上提出的面向硬件有效实现的Hash算法。本文利用差分攻击对MAME算法进行分析，首先针对MAME的结构性质利用对通用Feistel结构的攻击方法构造了22轮差分攻击，碰撞攻击的复杂度为2^97，（第二）原象攻击的复杂度为2^197；对23轮的差分攻击需要的预计算是2^64张表，每张表的大小为2^64；对24轮的差分攻击需要的预计算是2^128张表，每张表的大小为2^64。针对24轮差分攻击很大的内存复杂度，我们利用了算法的细节特性，改进了差分攻击，新的差分不需要预计算的辅助内存，（第二）原象的复杂度为2^224。