高稳定激光二极管抽运Nd∶YLF再生放大器

设计并实现了一种放大纳秒激光脉冲的高稳定的激光二极管(LD)抽运Nd∶YLF再生放大器。为了获得高稳定的输出,再生放大器工作在饱和状态。此时,再生放大器输出稳定性最好,而且注入激光脉冲能量波动引起的输出激光脉冲波动被抑制。由于增益饱和效应,再生放大器输出脉冲出现时域波形失真,附加后缀脉冲能够减弱时域波形失真。放大器工作波长1053nm,工作频率1Hz。输入240pJ的3ns方波激光脉冲,输出激光脉冲能量4.2mJ,总增益大于107,不稳定度小于1%(均方根),方波扭曲1.33。为3ns方波激光脉冲引入其本身幅度0.75倍的后缀脉冲,输出激光脉冲方波扭曲由1.33降至1.17。

Two- and three-photon absorption in a novel fluorene-based compound

A novel symmetrical charge transfer fluorene-based compound 2,7-bis (4-methoxystyryl)-9, 9-bis (2-ethylhexyl)-9H-fluorene (abbreviated as BMOSF) was synthesized and its nonlinear absorption was investigated using two different laser systems: a 140-fs, 800-nm Ti:sapphire laser operating at 1-kHz repetition rate and a 38-ps, 1064-nm Nd:YAG pulsed laser operating at 10-Hz repetition rate, respectively. Unique nonlinear absorption properties in this new compound were observed that rise from multiphoton absorption. The nonlinear absorption coefficients were measured to be 6.02

Charge and spin transport in graphene devices

170 p.

Diseño e implementación de una herramienta web para el análisis y ayuda para la toma de decisiones de tecnologías de acceso.

[EN]Nowadays the use of web applications is a routine not only for companies but also for anyone interested in them. Thus, this market has risen hugely since the introduction of The Internet in our daily lives. Everyone has experienced the moment when you have to choose an access service and you do not know which one to select. At that moment, it is when this web application comes into action. It provides a useful interface in order to choose between access services as well as an analysis tool for the different access technologies in the market. Written in Java language, this web application is as simple as it can be, offering a complete interface that meets the needs of everyone, from the people at home to the largest company.

Growth, characterization and optical quality of CaF2 single crystals grown by the temperature gradient technique

The CaF2 single crystals with diameters up to 200 mm were successfully grown by modified temperature gradient technique (TGT), which are suitable for application as optical elements in the ultraviolet range. The optimizations of various growth parameters were systematically studied. Properties of as-grown CaF2 crystals were characterized by the nature of inclusions, dislocations, crystallinity, and impurities contents. The results showed that the dislocations and multinucleation were mostly constrained in the conical part of the crystals with the cylindrical parts having the best crystalline quality and lowest impurity contents. The high optical quality of TGT-grown CaF2 single crystals was also confirmed to have excellent optical transmission in 190-2500 nm and refractive index homogeneity. (c) 2005 Elsevier Ltd. All rights reserved.

Effects of Yb concentration on the spectroscopic properties of Yb : Y3Al5O12

Yb:YAG single crystals with Yb doping concentration 5.4, 16.3, 27.1, 53.6, and 100 at.% were grown by the Czochralski process. The effects of Yb concentration on the absorption spectra (190-1 100nm), fluorescence spectra under 940nm and X-ray excitation were studied. The concentration quenching of fluorescence was observed when the Yb doping concentration reaches to as high as 27.1 at.% for Yb:YAG. Under 940 nm excitation, the influence of the self-absorption at 969 and 1029 nrn on the fluorescence spectra is not evident when the Yb doping concentration is as high as 27.1 at.%. However, it can greatly change the shape of fluorescence spectra of Yb:YAG when the Yb doping concentration reaches to above 53.6 at.%. (c) 2005 Elsevier B.V. All rights reserved.

Growth and properties of ZnO thin film on beta-Ga2O3(100) substrate by pulsed laser deposition

Zinc oxide (ZnO) thin films were grown on the beta-Ga2O3 (100) substrate by pulsed laser deposition (PLD). X-ray diffraction (XRD) indicated that the ZnO films are c-axis oriented. The optical and electrical properties of the films were investigated. The room temperature Photoluminescence (PL) spectrum showed a near band emission at 3.28 eV with two deep level emissions. Optical absorption indicated a visible exciton absorption at room temperature. The as-grown films had good electrical properties with the resistivities as low as 0.02 Omega cm at room temperature. Thus, beta-Ga2O3 (100) substrate is shown to be a suitable substrate for fabricating ZnO film. (c) 2006 Elsevier B.V. All rights reserved.