A compendious system of anatomy : In six parts. Part I. Osteology. II. Of the muscles, &c. III. Of the abdomen. Part IV. Of the thorax. V. Of the brain and nerves. VI. Of the senses. From the Encyclopaedia. Illustrated with twelve large copperplates.

Austin

Memoirs of the kings of Spain of the House of Bourbon, from the accession of Philip V. to the death of Charles III. 1700 to 1788. Drawn from original and unpublished documents.

Mode of access: Internet.

Pamĕti nejvyššího kancléře království Českého Viléma hraběte Slavaty, z Chlumu a z Košmberka ... šenka království Českého, císařuʺv Ferdinanda II. a III. ... (nar. 1. prosince 1572, zemř. 19. ledna 1652) Od \U+25a1\. 1608 do 1619 /

Includes indexes.

Sta. Lucia V. y M. [Material gráfico] : à 13 de Diciembre

Inscripción en la parte inf.: " 84"

Fragm. lat. VI 71 - Graduale (Fer.V p.Dom.II - Fer.II p.Dom.III in Quadr.)

Trägerband: Inc. qu. 1200 ; Vorbesitzer: Karmeliterkloster Frankfurt am Main

Fragm. lat. III 98 - Doctrinale (V. 1 - 38 und weitere Textabschnitte)

Trägerband: 'Aus: Crescentius. Louvain 1474'

Fragm. lat. V 33 - De anima (L. I, III)

Trägerband: Inc. qu. 1272; Vorbesitzer: Dominikanerkloster Frankfurt am Main

Asymmetric epoxidation of alkenes by a chiral manganese(III) salen complex anchored onto a functionalised hexagonal mesoporous silica

A Jacobsen-type catalyst was anchored onto an amine functionalised hexagonal mesoporous silica (HMS) through the diimine bridge fragment of the complex. The new heterogeneous catalyst, as well as the precedent materials, were characterised by elemental analyses, FTIR-DRIFT, UV-vis, porosimetry and XPS which showed that the complex was successfully anchored. This material was active in the epoxidation of styrene and α-methylstyrene in dichloromethane at 0°C using, respectively, m-CPBA/NMO and NaOCl. With the former substrate no asymmetric induction was found in the epoxide, whereas with the latter substrate higher %ee was found than in homogeneous phase. Using the latter experimental conditions, catalyst reuse led to no significant loss of catalytic activity and enantioselectivity. © 2005 Elsevier B.V. All rights reserved.

Fragm. lat. V 73 - Kommentar zu Aristoteles: De anima (L. III); Propositiones notabiles super libros Aristotelis (De anima; Meteora; Physica, L. II c. 7 - 10)

Trägerband: Inc. oct. 473; 'Homil. cath. 686a'; Vorbesitzer: Dominikanerkloster Frankfurt am Main

Characterization of resistivity of Sb2S3 semiconductor nanowires by conductive AFM and in-situ methods

Conductive AFM and in situ methods were used to determine contact resistance and resistivity of individual Sb2S3 nanowires. Nanowires were deposited on oxidized Si surface for in situ measurements and on Si surface with macroelectrodes for conductive AFM (C-AFM) measurements. Contact resistance was determined by measurement of I(V) characteristics at different distances from the nanowire contact with the macroelectrode and resistivity of nanowires was determined. Sb2S3 is a soft material with low adhesion force to the surface and therefore special precautions were taken during measurements.

Less strain, more gain_nano_patterning III-N thin films

Controlling the growth mechanism for nano-structures is one of the most critical topics in material science. In the past 10 years there has been intensive research worldwide in IIIN based nanowires for its many unique photonic and electrical properties at this scale. There are several advantages to nanostructuring III-N materials, including increased light extraction, increased device efficiency, reduction of efficiency droop, and reduction in crystallographic defect density. High defect densities that normally plague III-N materials and reduce the device efficiency are not an issue for nano-structured devices such as LEDs, due to the effective strain relaxation. Additionally regions of the light spectrum such as green and yellow, once found difficult to achieve in bulk planar LEDs, can be produced by manipulating the confinement and crystal facet growth directions of the active regions. A cheap and easily repeatable self-assembly nano-patterning technique at wafer scale was designed during this thesis for top down production of III-N nanowires. Through annealing under ammonia and N2 gas flow, the first reported dislocation defect bending was observed in III-N nanorods by in-situ transmission electron microscopy heating. By growing on these etched top down nanorods as a template, ultra-dense nanowires with apex tipped semi-polar tops were produced. The uniform spacing of 5nm between each wire is the highest reported space-filling factor at 98%. Finally by using these ultra-dense nanorods bridging the green gap of the light spectrum was possible, producing the first reported red, yellow, green light emission from a single nano-tip.

Optical properties of semiconductor quantum wires

This thesis presents theoretical investigations of the sub band structure and optical properties of semiconductor quantum wires. For the subband structure, we employ multiband effective-mass theory and the effective bond-orbital model both of which fully account for the band mixing and material anisotropy. We also treat the structure geometry in detail taking account of such effects as the compositional grading across material interfaces. Based on the subband structure, we calculate optical properties of quantum-wire structures. A recuring theme is the cross-over from one- to ~wo-dimensional behavior in these structures. This complicated behavior procludes the application of simple theoretical models to obtain the electronic structure. In particular, we calculate laser properties of quantum wires grown in V-grooves and find enhanced performance compared with quantum-well lasers. We also investigate optical anisotropy in quantum-wire arrays and propose an electro-optic device based on such structures.