Characterization of resistivity of Sb2S3 semiconductor nanowires by conductive AFM and in-situ methods
| Contribuinte(s) |
Medvids, Arturs |
|---|---|
| Data(s) |
30/05/2016
30/05/2016
01/04/2011
07/03/2013
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| Resumo |
Conductive AFM and in situ methods were used to determine contact resistance and resistivity of individual Sb2S3 nanowires. Nanowires were deposited on oxidized Si surface for in situ measurements and on Si surface with macroelectrodes for conductive AFM (C-AFM) measurements. Contact resistance was determined by measurement of I(V) characteristics at different distances from the nanowire contact with the macroelectrode and resistivity of nanowires was determined. Sb2S3 is a soft material with low adhesion force to the surface and therefore special precautions were taken during measurements. |
| Formato |
application/pdf |
| Identificador |
Bukins, J., Kunakova, G., Birjukovs, P., Prikulis, J., Varghese, J., Holmes, J.D. and Erts, D. (2011), ‘Characterization of Resistivity of Sb2S3 Semiconductor Nanowires by Conductive AFM and In Situ Methods’, Advanced Materials Research, Vol. 222, pp. 106-109, doi: 10.4028/www.scientific.net/AMR.222.106 222 106 109 1662-8985 http://hdl.handle.net/10468/2648 10.4028/www.scientific.net/AMR.222.106 Advanced Materials Research |
| Idioma(s) |
en |
| Publicador |
Trans Tech Publications |
| Relação |
Advanced Materials Research www.scientific.net |
| Direitos |
© (2011) Trans Tech Publications, Switzerland. All rights reserved. No part of contents of this paper may be reproduced or transmitted in any form or by any means without the written permission of TTP, www.ttp.net. (ID: 143.239.220.93-01/04/11,17:39:24) |
| Palavras-Chave | #Conductive AFM #Nanowires #Resistivity #Sb2S3 #Semiconductor nanowire |
| Tipo |
Conference item |
