Electron acceleration in a tightly focused laser beam

Electron acceleration in a tightly focused ultra-intensity linear polarized laser beam is investigated numerically. It has been found that the acceleration is strong phase dependent and is periodic to the variety of the initial laser field phase. When optimal initial parameters are chosen, the electron can be accelerated effectively. The accelerated electrons are emitted in pulses of which the full width is less than the half period of the laser field.

Phase dependence of electron acceleration in a tightly focused laser beam

Electron acceleration using a tightly focused ultraintensity laser beam is investigated numerically and strong phase dependence is found. The acceleration is periodic to the variety of the initial laser field phase, and the accelerated electrons are emitted in pulses of which the full width is the half period of the laser field. When a 10 PW intense laser beam is used, the electron with energy less than 1 Mev can be accelerated up to energies about 1.4 GeV. The optimal initial condition for electron acceleration is found. (C) 2005 American Institute of Physics.

Electron self-injection and acceleration driven by a tightly focused intense laser beam in an underdense plasma

A scheme for electron self-injection in the laser wakefield acceleration is proposed. In this scheme, the transverse wave breaking of the wakefield and the tightly focused geometry of the laser beam play important roles. A large number of the background electrons are self-injected into the acceleration phase of the wakefield during the defocusing of the tightly focused laser beam as it propagates through an underdense plasma. Particle-in-cell simulations performed using a 2D3V code have shown generation of a collimated electron bunch with a total number of 1.4 x 109 and energies up to 8 MeV. (C) 2005 American Institute of Physics.

Attosecond x-ray pulse generation by linear Thomson scattering of intense laser beam with relativistic electron

Linear Thomson scattering of a short pulse laser by relativistic electron lids been investigated using computer simulations. It is shown that scattering of an intense laser pulse of similar to 33 fs full width at half maximum, with an electron of gamma(o) = 10 initial energy, generates an ultrashort, pulsed radiation of 76 attoseconds, with a photon wavelength of 2.5 nm in the backward direction. The scattered radiation generated by a highly relativistic electron has superior quality in terms of its pulse width and angular distribution in comparison to the one generated by lower relativistic energy electron.

Intense laser beam guiding in self-induced electron cavitation channel in underdense plasmas

In underdense plasmas, the transverse ponderomotive force of an intense laser beam with Gaussian transverse profile expels electrons radially, and it can lead to an electron cavitation. An improved cavitation model with charge conservation constraint is applied to the determination of the width of the electron cavity. The envelope equation for laser spot size derived by using source-dependent expansion method is extended to including the electron cavity. The condition for self-guiding is given and illuminated by an effective potential for the laser spot size. The effects of the laser power, plasma density and energy dissipation on the self-guiding condition are discussed.

Precipitation of nanocrystals in glasses by electron irradiation: An alternative path to form glass ceramics?

This letter demonstrates an alternative method to form gallium silicate glass ceramics using high-energy electron irradiation. Compared with glass ceramics obtained from the conventional thermal treatment method, the distribution and crystal sizes of the precipitated Ga2O3 nanoparticles are the same. An advantage of this method is that the spatial distribution of the precipitated nanoparticles can be easily controlled. However, optically active dopants Ni2+ ions do not participate in the precipitation during electron irradiation. (c) 2007 American Institute of Physics.

Femtosecond laser pulse irradiation of Sb-rich AgInSbTe films: Scanning electron microscopy and atomic force microscopy investigations

The single-layer and multilayer Sb-rich AgInSbTe films were irradiated by a single femtosecond laser pulse with the duration of 120 fs. The morphological feature resulting from the laser irradiation have been investigated by scanning electron microscopy and atom force microscopy. For the single-layer film, the center of the irradiated spot is a dark depression and the border is a bright protrusion; however, for the multilayer film, the center morphology changes from a depression to a protrusion as the energy increases. The crystallization threshold fluence of the single-layer and the multilayer films is 46.36 mJ/cm(2), 63.74 mJ/cm(2), respectively.

Nano-modification inside transparent materials by femtosecond laser single beam

Periodic nanostructures along the polarization direction of light are observed inside silica glasses and tellurium dioxide single crystal after irradiation by a focused single femtosecond laser beam. Backscattering electron images of the irradiated spot inside silica glass reveal a periodic structure of stripe-like regions of similar to 20 nm width with a low oxygen concentration. In the case of the tellurium dioxide single crystal, secondary electron images within the focal spot show the formation of a periodic structure of voids with 30 nm width. Oxygen defects in a silica glass and voids in a tellurium dioxide single crystal are aligned perpendicular to the laser polarization direction. These are the smallest nanostructures below the diffraction limit of light, which are formed inside transparent materials. The phenomenon is interpreted in terms of interference between the incident light field and the electric field of electron plasma wave generated in the bulk of material.

Photoreduction of Ag+ in aluminoborate glasses induced by irradiation of a femtosecond laser

We report on photoreduction of Ag+ in aluminoborate glasses induced by irradiation of a femtosecond laser. Novel fluorescence was observed in the femtosecond laser irradiated glass when excited by a 365 nm ultraviolet lamp. Optical absorption, emission, and electron spin resonance spectra of the glass samples demonstrated that after the laser irradiation, portions of silver ions near the focused part of the laser beam inside the glass were reduced to silver atoms, which resulted in the formation of the characteristic fluorescence. The observed phenomenon may have promising applications in the fabrication of functional optical devices.

Influence of electron irradiation on hydrothermally grown zinc oxide single crystals

The resistivity of hydrothermally grown ZnO single crystals increased from similar to 10(3) Omega cm to similar to 10(6) Omega cm after 1.8 MeV electron irradiation with a fluence of similar to 10(16) cm(-2), and to similar to 10(9) Omega cm as the fluence increased to similar to 10(18) cm(-2). Defects in samples were studied by thermally stimulated current (TSC) spectroscopy and positron lifetime spectroscopy (PLS). After the electron irradiation with a fluence of 10(18) cm(-2), the normalized TSC signal increased by a factor of similar to 100. A Zn vacancy was also introduced by the electron irradiation, though with a concentration lower than expected. After annealing in air at 400 degrees C, the resistivity and the deep traps concentrations recovered to the levels of the as-grown sample, and the Zn vacancy was removed.

Neutron irradiation effect in two-dimensional electron gas of AlGaN/GaN heterostructures

AlGaN/GaN heterostructures have been irradiated by neutrons with different influences and characterized by means of temperature-dependent Hall measurements and Micro-Raman scattering techniques. It is found that the carrier mobility of two-dimensional electron gas (2DEG) is very sensitive to neutrons. At a low influence of 6.13 x 10(15) cm(-2), the carrier mobility drops sharply, while the sheet carrier density remains the same as that of an unirradiated sample. Moreover, even for a fluence of up to 3.66 x 10(16) cm(-2), the sheet carrier density shows only a slight drop. We attribute the degradation of the figure-of-merit (product of n(s) x mu) of 2DEG to the defects induced by neutron irradiation. Raman measurements show that neutron irradiation does not yield obvious change to the strain state of AlGaN/GaN heterostructures, which proves that degradation of sheet carrier density has no relation to strain relaxation in the present study. The increase of the product of n(s) x mu of 2DEG during rapid thermal annealing processes at relatively high temperature has been attributed to the activation of Ge-Ga transmuted from Ga and the recovery of displaced defects.

Influence of V/III ratio on the structural and photoluminescence properties of In0.52AlAs/In0.53GaAs metamorphic high electron mobility transistor grown by molecular beam epitaxy

A series of metamorphic high electron mobility transistors (MMHEMTs) with different V/III flux ratios are grown on GaAs (001) substrates by molecular beam epitaxy (XIBE). The samples are analysed by using atomic force microscopy (AFM), Hall measurement, and low temperature photoluminescence (PL). The optimum V/III ratio in a range from 15 to 60 for the growth of MMHEMTs is found to be around 40. At this ratio, the root mean square (RMS) roughness of the material is only 2.02 nm; a room-temperature mobility and a sheet electron density are obtained to be 10610.0cm(2)/(V.s) and 3.26 x 10(12)cm(-2) respectively. These results are equivalent to those obtained for the same structure grown on InP substrate. There are two peaks in the PL spectrum of the structure, corresponding to two sub-energy levels of the In0.53Ga0.47 As quantum well. It is found that the photoluminescence intensities of the two peaks vary with the V/III ratio, for which the reasons are discussed.

Growth and characterization of GaInNAs by molecular beam epitaxy using a nitrogen irradiation method

We propose an innovative technique, making use of the In segregation effect, referred as the N irradiation method, to enhance In-N bonding and extend the emission wavelength of GaInNAs quantum wells (QWs). After the formation of a complete In floating layer, the growth is interrupted and N irradiation is initiated. The majority of N atoms are forced to bond with In atoms and their incorporation is regulated independently by the N exposure time and the As pressure. The effect of the N exposure time and As pressure on the N incorporation and the optical quality of GaInNAs QWs were investigated. Anomalous photoluminescence (PL) wavelength red shifts after rapid thermal annealing (RTA) were observed in the N-irradiated samples, whereas a normal GaInNAs sample revealed a blue shift. This method provides an alternative way to extend the emission wavelength of GaInNAs QWs with decent optical quality. We demonstrate light emission at 1546 nm from an 11-nm-thick QW, using this method and the PL intensity is similar to that of a 7-nm-thick GaInNAs QW grown at a reduced rate. (C) 2008 Elsevier B.V. All rights reserved.

Effects of crystalline quality on the phase stability of cubic boron nitride thin films under medium-energy ion irradiation

To investigate the effect of radiation damage on the stability and the compressive stress of cubic boron nitride (c-BN) thin films, c-BN films with various crystalline qualities prepared by dual beam ion assisted deposition were irradiated at room temperature with 300 keV Ar+ ions over a large fluence range up to 2 x 10(16) cm(-2). Fourier transform infrared spectroscopy (FTIR) data were taken before and after each irradiation step. The results show that the c-BN films with high crystallinity are significantly more resistant against medium-energy bombardment than those of lower crystalline quality. However, even for pure c-BN films without any sp(2)-bonded BN, there is a mechanism present, which causes the transformation from pure c-BN to h-BN or to an amorphous BN phase. Additional high resolution transmission electron microscopy (HRTEM) results support the conclusion from the FTIR data. For c-BN films with thickness smaller than the projected range of the bombarding Ar ions, complete stress relaxation was found for ion fluences approaching 4 x 10(15) cm(-2). This relaxation is accompanied, however, by a significant increase of the width of c-BN FTIR TO-line. This observation points to a build-up of disorder and/or a decreasing average grain size due to the bombardment. (c) 2005 Elsevier B.V. All rights reserved.