Room-Temperature Continuous-Wave Operation of InGaN-Based Blue-Violet Laser Diodes with a Lifetime of 15.6 Hours

We report our recent progress of investigations on InGaN-based blue-violet laser diodes (LDs). The room-temperature (RT) cw operation lifetime of LDs has extended to longer than 15.6 h. The LD structure was grown on a c-plane free-standing (FS) GaN substrate by metal organic chemical vapor deposition (MOCVD). The typical threshold current and voltage of LD under RT cw operation are 78 mA and 6.8 V, respectively. The experimental analysis of degradation of LD performances suggests that after aging treatment, the increase of series resistance and threshold current can be mainly attributed to the deterioration of p-type ohmic contact and the decrease of internal quantum efficiency of multiple quantum well (MQW), respectively.

DIRECT ION-BEAM DEPOSITION OF CARBON-FILMS ON SILICON IN THE ION ENERGY-RANGE OF 15-500 EV

Direct ion beam deposition of carbon films on silicon in the ion energy range of 15-500 eV and temperature range of 25-800-degrees-C has been studied. The work was carried out using mass-separated C+ and CH3+ ions under ultrahigh vacuum. The films were characterized with x-ray photoelectron spectroscopy, Raman spectroscopy, transmission electron microscopy, and transmission electron diffraction analysis. In the initial stage of the deposition, carbon implanted into silicon induced the formation of silicon carbide, even at room temperature. Further carbon ion bombardment then led to the formation of a carbon film. The film properties were sensitive to the deposition temperature but not to the ion energy. Films deposited at room temperature consisted mainly of amorphous carbon. Deposition at a higher temperature, or post-deposition annealing, led to the formation of microcrystalline graphite. A deposition temperature above 800-degrees-C favored the formation of microcrystalline graphite with a preferred orientation in the (0001) direction. No evidence of diamond formation in these films was observed.

Microscopic analysis of defects in a high resistivity silicon detector irradiated to 1.7x10(15)n/cm(2)

Current-based microscopic defect analysis methods with optical filling techniques, namely current deep level transient spectroscopy (I-DLTS) and thermally stimulated current (TSC), have been used to study defect levels in a high resistivity silicon detector (p(+)-n-n(+)) induced by very high fluence neutron (VHFN) irradiation (1.7x10(15) n/cm(2)). As many as fourteen deep levels have been detected by I-DLTS. Arrhenius plots of the I-DLTS data have shown defects with energy levels ranging from 0.03 eV to 0.5 eV in the energy band gap. Defect concentrations of relatively shallow levels (E(t) < 0.33 eV) are in the order of 10(13)cm(-3), while those for relatively deep levels (E(t) > 0.33 eV) are in the order of 10(14) cm(-3). TSC data have shown similar defect spectra. A full depletion voltage of about 27,000 volts has been estimated by C-V measurements for the as-irradiated detector, which corresponds to an effective space charge density (N-eff) in the order of 2x10(14) cm(-3). Both detector leakage current and full depletion voltage have been observed to increase with elevated temperature annealing (ETA). The increase of the full depletion voltage corresponds to the increase of some deep levels, especially the 0.39 eV level. Results of positron annihilation spectroscopy have shown a decrease of total concentration of vacancy related defects including vacancy clusters with ETA, suggesting the breaking up of vacancy clusters as possible source of vacancies for the formation of single defects during the reverse anneal.

长期施肥黑土有机磷组分的31PNMR研究

有机磷是植物和微生物的重要磷源，其各化合物含量组成在一定程度上可反映土壤供磷情况。31P 核磁共振谱仪（31P NMR）通过监测核磁共振频率可以将有机磷不同组分加以区分，是测定土壤有机磷组分的理想工具。本文以吉林省公主岭市不同施肥处理（不施肥处理Control；无机肥处理NPK；有机肥处理M1 、M2；有机无机配施处理M1+NPK、M2+NPK）的长期试验地典型黑土为研究对象，对其有机磷组分应用31P NMR技术进行了研究。结果发现： 1、上机样品的浓度对谱图的影响大，同一批样品需按照同一方法配制，且浓度不是越高越好。冻干前浸提液不中和，试验中未发现磷酸二酯，土壤的NaOH-EDTA浸提液在冷冻干燥前中和，可以减少磷酸二酯的水解；土壤全碳对实验谱图的分辨率有较大的影响。 2、Control处理和NPK处理磷酸单酯含量占浸提液全磷量的比例最高，分别为41%和38%，M2 + NPK处理比例最低为13% 。肌醇六磷酸盐含量占总有机磷量的比例在7% ～ 28%之间，Control处理最高，显著高于NPK处理、M1处理、M1 + NPK处理和M2 + NPK处理。土壤焦磷酸盐含量占浸提液全磷含量比例为0.01% ～ 0.31%，施有机肥处理土壤焦磷酸盐含量显著高于Control处理和NPK处理。 3、土壤浸提液冷冻干燥前中和，测定结果均发现胞壁酸（属磷酸二酯）的峰，中和后的测定磷酸二酯含量占浸提液全磷量的比例在0.53%和3.75%之间；且在Control处理发现-5.28ppm、-26.19ppm和-27.54ppm处发现三个未知峰；Control处理未知化合物占总有机磷的比例为0.35%。