Annealing-induced evolution of defects in low-temperature-grown GaAs-related materials

Infrared absorption spectroscopy, optical transient current spectroscopy (OTCS), and photoluminescence (PL) spectroscopy are used to investigate the annealing induced evolution of defects in low-temperature (LT)-grown GaAs-related materials. Two LT samples of bulk GaAs (sample A) and GaAs/AlxGa1-xAs multiple-quantum-well. (MQW) structure (sample B) were grown at 220 and 320 degreesC on (001) GaAs substrates, respectively. A strong defect-related absorption band has been observed in both as-grown samples A and B. It becomes weaker in samples annealed at temperatures above 600 degreesC. In sample A, annealed in the range of 600-800 degreesC, a large negative decay signal of the optical transient current (OTC) is observed in a certain range of temperature, which distorts deep-level spectra measured by OTCS, making it difficult to identify any deep levels. At annealing temperatures of 600 and 700 degreesC, both As-Ga antisite and small As cluster-related deep levels are identified in sample B. It is found that compared to the As cluster, the As-Ga antisite has a larger activation energy and carrier capture rate. At an annealing temperature of 800 degreesC, the large negative decay signal of the OTC is also observed in sample B. It is argued that this negative decay signal of the OTC is related to large arsenic clusters. For sample B, transient PL spectra have also been measured to study the influence of the, defect evolution on optical properties of LT GaAs/AlxGa1-xAs MQW structures. Our results clearly identify a defect evolution from AS(Ga) antisites to arsenic clusters after annealing.

Ultrafast low-temperature grown AlGaAs/GaAs photorefractive quantum wells using point defects as capture centers

At a medium substrate temperature of 400 degrees C and a lower As flux, we have grown an ultrafast AlGaAs/GaAs photorefractive multiple quantum well (MQW) structure by molecular beam epitaxy. The as-grown sample exhibits strong photorefractive effect under the transverse Frantz-Keldysh geometry. A peak electroabsorption of 2100 cm(-1) is measured in the as-grown sample in an 11 kV/cm dc electric field, and the peak photorefractive diffraction efficiency can be 1.2%. After postgrowth annealing, the photorefractive effect becomes weak and disappears in samples annealed above 700 degrees C. Using optical transient current spectroscopy, deep levels are measured in these samples. It is found that deep levels are stable against annealing until 700 degrees C. Using a pump-probe technique, carrier lifetimes are measured at room temperature. We find that the as-grown sample has a lifetime of 20 ps, while the 700 degrees C annealed sample has a lifetime of more than 200 ps. The ultrafast lifetime in the as-grown sample is caused by point defects, not by As clusters. Our result show that AlGaAs/GaAs MQW structure grown around 400 degrees C has better performance of the photorefractive effect. (C) 1999 American Institute of Physics. [S0003-6951(99)04036-X].

High-frequency ferromagnetic resonance on ultrafine cobalt particles

We report on high-frequency (300-700 GHz) ferromagnetic resonance (HF-FMR) measurements on cobalt superparamagnetic particles with strong uniaxial effective anisotropy. We derive the dynamical susceptibility of the system on the basis of an independent-grain model by using a rectangular approach. Numerical simulations give typical line shapes depending on the anisotropy, the gyromagnetic ratio, and the damping constant. HF-FMR experiments have been performed on two systems of ultrafine cobalt particles of different sizes with a mean number of atoms per particles of 150 +/- 20 and 310 +/- 20. In both systems, the magnetic anisotropy is found to be enhanced compared to the bulk value, and increases as the particle size decreases, in accordance with previous determinations from magnetization measurements. Although no size effect has been observed on the gyromagnetic ratio, the transverse relaxation time is two orders of magnitude smaller than the bulk value indicating strong damping effects, possibly originating from surface spin disorders.

The dependence of GexSi1-x epitaxial growth on GeH4 flow using chemical vapour deposition

GexSi1-x epilayers were grown at 700-900 degrees C by atmospheric pressure chemical vapour deposition. GexSi1-x, Si and Ge growth rates as functions of GeH4 flow are considered separately to investigate how the growth of the epilayers is enhanced. Arrhenius plots of Si and Ge incorporation in the GexSi1-x growth show the activation energies associated with the growth rates are about 1.2 eV for silicon and 0.4 eV for germanium, indicating that Si growth is limited by surface kinetics and Ge growth is limited by mass transport. A model based on this idea is proposed and used to simulate the growth of GexSi1-x. The calculation and experiment are in good agreement. Growth rate and film composition increase monotonically with growth pressure; both observations are explained by the model.

Multi channel micro neural probe fabricated with SOI

Extracellular neural recording requires neural probes having more recording sites as well as limited volumes. With its mechanical characteristic and abundant process method, Silicon is a kind of material fit for producing neural probe. Silicon on insulator (SOI) is adopted in this paper to fabricate neural probes. The uniformity and manufacturability are improved. The fabricating process and testing results of a series of Multi channel micro neural probes were reported. The thickness of the probe is 15 mu m-30 mu m. The typical impedance characteristics of the record sites are around 2M Omega at 1k Hz. The performance of the neural probe in-vivo was tested on anesthetic rat. The recorded neural spike was typically around 140 mu V. Spike recorded from individual site could exceed 700 mu V. The average signal noise ratio was 7 or more.

An Embedded Ultra Low Power Nonvolatile Memory in a Standard CMOS Logic Process

This paper proposes an embedded ultra low power nonvolatile memory in a standard CMOS logic process. The memory adopts a bit cell based on the differential floating gate PMOS structure and a novel operating scheme. It can greatly improve the endurance and retention characteristic and make the area/bit smaller. A new high efficiency all-PMOS charge pump is designed to reduce the power consumption and to increase the power efficiency. It eliminates the body effect and can generate higher output voltage than conventional structures for a same stage number. A 32-bit prototype chip is fabricated in a 0.18 mu m 1P4M standard CMOS logic process and the core area is 0.06 mm(2). The measured results indicate that the typical write/erase time is 10ms. With a 700 kHz clock frequency, power consumption of the whole memory is 2.3 mu A for program and 1.2 mu A for read at a 1.6V power supply.

Optical properties of inGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy

It is found that both methods using either continuous Sb supply or pre-deposition of a very thin Sb layer are efficient for the Sb-assisted molecular beam epitaxy growth of highly strained InGaAs/GaAs quantum wells (QWs). The emission of QWs is extended to long wavelength close to 1.25 mu m with high luminescence efficiency at room temperature. The influence of rapid thermal annealing (RTA) on the photoluminescence intensity critically depends on the annealing temperature and duration for highly strained QWs. A relatively low RTA temperature of 700 degrees C with a short duration of 10 s is suggested for optimizing the annealing effect. (c) 2005 Elsevier B.V. All rights reserved.

Magnetic Properties of FePt Nanoparticles Prepared by a Micellar Method

FePt nanoparticles with average size of 9 nm were synthesized using a diblock polymer micellar method combined with plasma treatment. To prevent from oxidation under ambient conditions, immediately after plasma treatment, the FePt nanoparticle arrays were in situ transferred into the film-growth chamber where they were covered by an SiO2 overlayer. A nearly complete transformation of L1(0) FePt was achieved for samples annealed at temperatures above 700 A degrees C. The well control on the FePt stoichiometry and avoidance from surface oxidation largely enhanced the coercivity, and a value as high as 10 kOe was obtained in this study. An evaluation of magnetic interactions was made using the so-called isothermal remanence (IRM) and dc-demagnetization (DCD) remanence curves and Kelly-Henkel plots (Delta M measurement). The Delta M measurement reveals that the resultant FePt nanoparticles exhibit a rather weak interparticle dipolar coupling, and the absence of interparticle exchange interaction suggests no significant particle agglomeration occurred during the post-annealing. Additionally, a slight parallel magnetic anisotropy was also observed. The results indicate the micellar method has a high potential in preparing FePt nanoparticle arrays used for ultrahigh density recording media.

空间网络数据库中移动对象的最短路线算法

在空间网络数据库中，基于位置的服务(10cation—based services，LBS)变得越来越重要，最短路线查询是最广泛的服务请求之一．假设在网络上有一个原始对象(例如：在道路上行驶的汽车)、有一个目标对象(例如：旅店、加油站、救护车等等)，那么最短路线查询就是要找到原始对象到目标对象的最短路线．最短路线算法的研究主要分为两个方面，实时计算和预计算．在预计算方面，当前的研究对网络空间中的最短路线查询提出了多种解决方式，但是这些方法中都假设目标对象是静止的．文中在原始对象和目标对象都处于移动状态时，给出了一种最短路线查询的 算法．该算法创建了一组索引结构，将计算两个动态点之间最短路线的问题转换为计算静态边之间最短路线的问题．主要关注交通网络．但是该算法不会使用任何领域相关的信息，所以能够被应用到其他的网络环境中．从计算复杂性而言，传统的Dijkstra算法时间复杂性估计是0((i+志)2)，而该算法的相应估计是0(klbi)．

支持POSIX权能机制的一个新的特权控制的形式模型

为了在操作系统中实施极小特权原理,必须对进程的特权进行有效的控制;但是进程的动态性使实现对它的控制变得困难重重.在深入分析进程特权的形成过程和作用机制的基础上,提出了实施极小特权原理的三层实现机制,即管理层、功能控制层和执行层;而且明确指出限制特权的有效范围是特权控制的重要环节,POSIX中已经提到了它,但是POSIX的权能机制并不能有效地支持它.在分析现有控制机制的优缺点的基础上,不仅提出了改进的权能公式,而且提出了基于RBAC,DTE和POSIX权能机制的新的进程控制机制的完整的形式模型;模型中的新不变量反映了新机制与RBAC,DTE和POSIX权能机制的不同,新机制推广了子域控制机制,实现了子域控制机制的动态化.

印刷线路板废弃物的热解与动力学实验研究

分别应用管式炉反应器和热重分析手段对印刷线路板废弃物的热解行为和热解动力学进行了实验研究。在管式炉中，研究不同的热解温度：700～950℃，对产物分布和气体成分分布的影响。实验结果表明：PCB热解气体的主要成分是H2和CO2，气体的热值较低，仅为2.09～5.41MJ/m^3，PCB不适合以气体产物为目标的能源利用方式。应用Friedman方法对PCB的热解动力学进行了研究，求得PCB的热解动力学参数分别是：表观活化能190.92kJ/mol，反应级数5.97，指前因子lnA47.14min^-1。

Operational characteristics of a 1.2-MW biomass gasification and power generation plant

In this study, we analyzed the operational characteristics of a 1.2-MW rice husk gasification and power generation plant located in Changxing, Zhejiang province, China. The influences of gasification temperature, equivalence ratio (ER), feeding rate and rice husk water content on the gasification characteristics in a fluidized bed gasifier were investigated. The axial temperature profile in the dense phase of the gasifier showed that inadequate fluidization occurred inside the bed, and that the temperature was closely related to changes in ER and feeding rate. The bed temperature increased linearly with increasing ER when the feeding rate was kept constant, while a higher feeding rate corresponded to a lower bed temperature at fixed ER. The gas heating value decreased with increasing temperature, while the feeding rate had little effect. When the gasification temperature was 700-800C, the gas heating value ranged from 5450-6400kJ/Nm3. The water content of the rice husk had an obvious influence on the operation of the gasifier: increases in water content up to 15% resulted in increasing ER and gas yield, while water contents above 15% caused aberrant temperature fluctuations. The problems in this plant are discussed in the light of operational experience of MW-scale biomass gasification and power generation plants.

Synthesis of novel hexagon SnO2 nanosheets in ethanol/water solution by hydrothermal process

The novel hexagon SnO2 nanosheets are successfully synthesized in ethanol/water solution by hydrothermal process. The samples are characterized by X-ray diffraction (XRD), infrared ray (IR) and transmission electron microscopy (TEM). By changing the reaction conditions, the size and the morphology can be controlled. Comparison experiments show that when the temperature increased from 140 degrees C to 180 degrees C, the edge length of the hexagon nanoparticles increases from 300-450 nm to 700-900 nm. On the other hand, by adjusting the ratios of water to ethanol from 2 to 0.5, SnO2 nanoparticles with different morphologies of triangle and sphere are obtained. When the concentration of NaOH is increased from 0.15 M to 0.30 M, a hollow ring structure can be obtained. (c) 2006 Elsevier B.V. All rights reserved.