A 10 Gb/s Directly-Modulated 1.3 mu m InAs/GaAs Quantum-Dot Laser

We demonstrate 10 Gb/s directly-modulated 1.3 mu m InAs quantum-dot (QD) lasers grown on GaAs substrates by molecular beam epitaxy. The active region of the QD lasers consists of five-stacked InAs QD layers. Ridge-waveguide lasers with a ridge width of 4 mu m and a cavity length of 600 mu m are fabricated with standard lithography and wet etching techniques. It is found that the lasers emit at 1293 nm with a very low threshold current of 5 mA at room temperature. Furthermore, clear eye-opening patterns under 10 Gb/s modulation rate at temperatures of up to 50 degrees C are achieved by the QD lasers. The results presented here have important implications for realizing low-cost, low-power-consumption, and high-speed light sources for next-generation communication systems.

Highly efficient and stable organic light-emitting diodes employing MoO3-doped perylene-3, 4, 9, 10-tetracarboxylic dianhydride as hole injection layer

We report highly efficient and stable organic light-emitting diodes (OLEDs) with MoO3-doped perylene-3, 4, 9, 10-tetracarboxylic dianhydride (PTCDA) as hole injection layer (HIL). A green OLED with structure of ITO/20 wt% MoO3: PTCDA/NPB/Alq(3)/LiF/Al shows a long lifetime of 1012 h at the initial luminance of 2000 cd/m(2), which is 1.3 times more stable than that of the device with MoO3 as HIL. The current efficiency of 4.7 cd/A and power efficiency of 3.7 lm/W at about 100 cd/m(2) have been obtained. The charge transfer complex between PTCDA and MoO3 plays a decisive role in improving the performance of OLEDs.

Influence of interface modification on the performance of polymer/Bi2S3 nanorods bulk heterojunction solar cells

In this paper, bulk heterojunction photovoltaic devices based on the poly[2-methoxy-5-(3',7'-dimethyloctyloxy)- 1,4-phenylenevinylene] (MDMO-PPV):Bi2S3 nanorods hybrid material were present. To optimize the performance of the devices, the interface modification of the hybrid material that has a significant impact on the exciton dissociation efficiency was studied. An improvement in the device performance was achieved by modifying the Bi2S3 surface with a thin dye layer. Moreover, modifying the Bi2S3 surface with anthracene-9-carboxylic acid can enhance the performance further. Compared with the solar cells with Bi2S3 nanorods hybrid with the MDMO-PPV as the active layer, the anthracene-9carboxylic acid modified devices are better in performance, with the power conversion efficiency higher by about one order in magnitude.

Production of biodiesel from soapstock using an ion-exchange resin catalyst

The feasibility of biodiesel production from soapstock containing high water content and fatty matters by a solid acid catalyst was investigated. Soapstock was converted to high-acid acid oil (HAAO) by the hydrolysis by KOH and the acidulation by sulfuric acid. The acid value of soapstock-HAAO increased to 199.1 mg KOH/g but a large amount of potassium sulfate was produced. To resolve the formation of potassium sulfate, acid oil was extracted from soapstock and was converted to HAAO by using sodium dodecyl benzene sulfonate (SDBS). The maximum acid value of acid oil-HAAO was 194.2 mg KOH/g when the mass ratio of acid oil, sulfuric acid, and water was 10:4:10 at 2% of SDBS. In the esterification of HAAO using Amberylst-15, fatty acid methyl ester (FAME) concentration was 91.7 and 81.3% for soapstock and acid oil, respectively. After the distillation, FAME concentration became 98.1% and 96.7% for soapstock and acid oil. The distillation process decreased the total glycerin and the acid value of FAME produced a little.

结构因子相角的代数解法及K_8H_5[La(SiWMo_(10)O_(39))(SiW_3Mo_8O_(39))]·nH_2O的晶体结构

一 结构因子相角的代数解法晶体结构研究中的相角问题，一直是晶体学工作者努力探求的基本问题。几十年来，关于相角问题的研究已经取得了巨大的进展，直接法的成熟和普遍应用就是这个进展的显著标志。在直接法相角问题研究中，历来存在两种基本方法，即概率法和代数法。当前直接法的迅猛发展，则主要以概率法为基础，其应用的基本公式即是来自∑关系中的∑_2关系和由此发展出的TANGENT公式，并结合一系列的基本理论和辅助公式，从而使直接法的发展一直呈方兴未艾之势。与此形成鲜明对照的是，相角问题的代数法研究则有日趋下降之势，尤其近十年来则显著落后了。作者从近年来的∑关系研究中，看到要解决相角问题，代数法仍然有其潜在的应作价值，并认为在概率法可以得到应用的许多方面，在代数法那里都应找到对应的类似内容，而代数法在研究和应用中所表现出的不同于概率法的那些方面也正是在相角问题研究中最令人感兴趣的问题，这就是我们进行代数法研究的目的和出发点。（一）1.5和2.5阶代数式的提出及对±2~(II)型相角的估算。（二）一般类型相角的估算（三）结构相角通用代数式的推导。代数法不仅可用于结构半不变量O，π型相角的计算，而且可用于非结构半不变量的种种类型相角的估算，其中包括型和一般类型相角，而且其应用效果完全可以和概率法相比拟，在机时利用上前者有一定优势。通用代数式的获得将为代数法的普遍应用和计算机计算创造了方便条件。二稀土杂多酸根配合物K_8H_5[La(SiWMo_(10)O_(39))(SiW_3Mo_8O_(39))]·nH_2O的晶体结构采用低温技术，在-90 ℃的干燥氮气保护下，收集晶体衍射数据，以直接法解出结构。a = 17.485(5), b = 27.096(6), c = 21.642(5)A, β = 107.79(2)°, z = 4。最后的R值为0.097。中心离子La(III)同两个杂多酸根提供的8 个氧配合。而其中的W、Mo同氧的配位情况基本相同，者是与氧六配位，形成变形配位八面体。

EFFECTS OF AN EXTERNAL MAGNETIC-FIELD ON SHALLOW DONOR LEVELS IN SEMICONDUCTORS

An extension of Faulkner's method for the energy levels of the shallow donor in silicon and germanium at zero field is made in order to investigate the effects of a magnetic field upon the excited states. The effective-mass Hamiltonian matrix elements of an electron bound to a donor center and subjected to a magnetic field B, which involves both the linear and quadratic terms of magnetic field, are expressed analytically and matrices are solved numerically. The photothermal ionization spectroscopy of phosphorus in ultrapure silicon for magnetic fields parallel to the [1,0,0] and [1,1,1] directions and up to 10 T is explained successfully.

INVESTIGATION OF BURIED ALN LAYERS FORMED BY NITROGEN IMPLANTATION INTO AL

The composition and microstructure of buried layers of AlN formed by high energy N+ ion implantation into polycrystalline Al have been determined. Both bulk and evaporated thin films of Al have been implanted with 100 and 200 keV N+ ions to doses of up to 1.8 x 10(18)/cm2. The layers have been characterised using SIMS, XTEM, X-ray diffraction, FTIR, RBS and in terms of their microhardness. It is found that, for doses greater than the critical dose, buried, polycrystalline AlN layers are formed with preferred (100) or (002) orientations, which are sample specific. With increasing dose the nitrogen concentration saturates at the value for stoichiometric AlN although the synthesised compound is found to be rich in oxygen.

STRUCTURAL DEFECTS AND THEIR ELECTRICAL-ACTIVITY IN GERMANIUM IMPLANTED SILICON

The electrical and structural characteristics of secondary defects in regrown amorphous layers formed in n-type Si(100) with a resistivity of 2 OMEGA cm and 6 OMEGA cm using Ge+ ions, has been studied. The amorphous layers with a thickness of 460 nm are formed by implantation of 1 x 10(15) Ge+ cm-2 at an energy of 400 keV. Both conventional furnace and rapid thermal annealing were used to regrow the amorphous layer and the residual defects have been characterised in terms of their concentration depth distribution and activation energies using C-V and DLTS. Structural information has been obtained from RBS and XTEM. By choosing suitable anneal conditions it is possible to eliminate extended defects, apart from a low concentration of end of range dislocation loops. However, a substantial population of electrically active point defects remain after simple low thermal budget anneals. In a sample implanted with 1 x 10(15) Ge+ cm-2 at 400 keV a region of deep donors approximately 460 nm from the surface is always present When the samples are annealed at higher temperatures (> 850-degrees the total deep donor concentration is reduced by one order of magnitude. Other electrically active defects not observable in the low (750-degrees-C) temperature annealed layers become apparent during anneals at intermediate temperatures.

REDUCTION OF CRYSTALLINE DISORDER IN MOLECULAR-BEAM EPITAXY GAAS ON SI BY MEV ION-IMPLANTATION AND SUBSEQUENT ANNEALING

Molecular beam epitaxy GaAs films on Si, with thicknesses ranging from 0.9-2.0-mu-m, were implanted with Si ions at 1.2-2.6 MeV to doses in the range 10(15)-10(16) cm-2. Subsequent rapid infrared thermal annealing was carried out at 850-degrees-C for 15 s in a flowing N2 atmosphere. Crystalline quality was analyzed by using Rutherfold backscattering/channeling technique and Raman scattering spectrometry. The experimental results show that the recrystallization process greatly depends on the dose and energy of implanted ions. Complete recrystallization with better crystalline quality can be obtained under proper implantation and subsequent annealing. In the improved layer the defect density was much lower than in the as-grown layer, especially near the interface.