Effect of the growth mode on the two- to three-dimensional transition of InAs grown on vicinal GaAs(001) substrates

Some differences were observed between conventional molecular-beam epitaxy (MBE) and mobility enhanced epitaxy (MEE) of InAs on a vicinal GaAs(001) substrate in the variation of the number density N of the InAs islands, with additional InAs coverage (theta - theta(c)) after the critical InAs coverage theta(c) during the two- to three-dimensional (2D-3D) transition. For MBE the variation was consistent with the power law N(theta) (theta similar to theta(c))(alpha); while for MEE, the linear relation N(theta) proportional to (theta - theta(c)) was observed. The difference is discussed in terms of the randomness in the nucleation of the InAs islands.

High-precision determination of lattice constants and structural characterization of InN thin films

X-ray diffraction and Rutherford backscattering/channeling were used to characterize the crystalline quality of an InN layer grown on Al2O3(0001) Using metal-organic chemical-vapor deposition. A full width at half maximum of 0.27 degrees from an InN(0002) omega scan and a minimum yield of 23% from channeling measurements show that this 480-nm-thick InN layer grown at low temperature (450 degrees C) has a relatively good crystalline quality. High-resolution x-ray diffraction indicates that the InN layer contains a small fraction of cubic InN, besides the predominant hexagonal phase. From this InN sample, the lattice constants a=0.353 76 nm and c=0.570 64 nm for the hexagonal InN and a=0.4986 nm for the cubic InN were determined independently. 2 theta/omega-chi mapping and a pole figure measurement revealed that the crystallographic relationship among the cubic InN, the hexagonal InN, and the substrate is: InN[111]parallel to InN[0001]parallel to Al2O3[0001] and InN{110}parallel to InN{1120}parallel to Al2O3{1010}, and that the cubic InN is twinned. Photoluminescence measurements indicate that the band-gap energy of this sample is approximately 0.82 eV. (c) 2006 American Vacuum Society.

Localized exciton dynamics in AlInGaN alloy

Carrier recombination dynamics in AlInGaN alloy has been studied by photoluminescence (PL) and time-resolved PL (TRPL) at various temperatures. The fast red-shift of PL peak energy is observed and well fitted by a physical model considering the thermal activation and transfer processes. This result provides evidence for the exciton localization in the quantum dot (QD)-like potentials in our AlInGaN alloy. The TRPL signals are found to be described by a stretched exponential function of exp[(-t/,tau)13], indicating the presence of a significant disorder in the material. The disorder is attributed to a randomly distributed QDs or clusters caused by indium fluctuations. By studying the dependence of the dispersive exponent beta on temperature and emission energy, we suggest that the exciton hopping dominate the diffusion of carriers localized in the disordered QDs. Furthermore, the localized states are found to have 0D density of states up to 250 K, since the radiative lifetime remains almost unchanged with increasing temperature. (C) 2003 Elsevier Science Ltd. All rights reserved.

A novel method of determining semiconductor parameters in EBIC and SEBIV modes of SEM

We present a novel method for determining semiconductor parameters such as diffusion length L, lifetime tau and surface recombination velocity S of minority carriers by employing scanning electron microscopy (SEM). This new method is applicable to both electron beam induced current (EBIC and surface electron beam induced voltage (SEBIV) modes in SEM. The quantitative descriptions for EBIC and SEBIV signals are derived. The parameters L, S and tau can be directly extracted from the expressions for EBIC or SEBIV signals and their relaxation characteristics in experiment. As an example, the values of L, S and tau for n-p junction and p-Si crystal are determined by using the novel method in EBIC or SEBIV mode. The carrier diffusion length of a p-Si crystal is determined to be 8.74 mum in SEBIV mode. It is very close to the normal diffusion length of 7.41 mum of this sample. The novel method is proved to be very helpful for the quantitative characterization of semiconductor materials and devices. Especially, the SEBIV mode in SEM shows great potential for investigating semiconductor structures nondestructively.

Structural and optical properties of InAlGaN films grown directly on low-temperature buffer layer with (0001)sapphire substrate

Quaternary InAlGaN film has been grown directly on top of low-temperature-deposited GaN buffer layer by low-pressure metalorganic vapor phase epitaxy. High-resolution X-ray diffraction and photoluminescence (PL) results show that the film has good crystal quality and optical property. Temperature-dependent PL and time-resolved PL (TRPL) have been employed to study the carriers recombination dynamics in the film. The TRPL signals can be well fitted as a stretched exponential function exp[-(t/tau)(beta)] from 14 to 250 K, indicating that the emission is attributed to the radiative recombination of excitons localized in disorder quantum nanostructures such as quantum disks originating from indium (In) clusters or In composition fluctuation. The cross-sectional high-resolution electron microscopy measurement further proves that there exist the disorder quantum nanostructures in the quaternary. By investigating the dependence of the exponential parameter beta on the temperature, it is shown that the multiple trapping-detrapping mechanism dominates the diffusion among the localized states. The localized states are considered to have two-dimensional density of states (DOS) at 250 K, since radiative recombination lifetime tau(r) increases linearly with increasing temperature. (C) 2002 Elsevier Science B.V. All rights reserved.

Positron-annihilation study of compensation defects in InP

Positron-annihilation lifetime and positron-annihilation Doppler-broadening (PADB) spectroscopies have been employed to investigate the formation of vacancy-type compensation defects in n-type undoped liquid encapsulated Czochrolski grown InP, which undergoes conduction-type conversions under high temperature annealing. N-type InP becomes p-type semiconducting by short time annealing at 700 degreesC, and then turns into n-type again after further annealing but with a much higher resistivity. Long time annealing at 950 degreesC makes the material semi-insulating. Positron lifetime measurements show that the positron average lifetime tau(av) increases from 245 ps to a higher value of 247 ps for the first n-type to p-type conversion and decreases to 240 ps for the ensuing p-type to n-type conversion. The value of tau(av) increases slightly to 242 ps upon further annealing and attains a value of 250 ps under 90 h annealing at 950 degreesC. These results together with those of PADB measurements are explained by the model proposed in our previous study. The correlation between the characteristics of positron annihilation and the conversions of conduction type indicates that the formation of vacancy-type defects and the progressive variation of their concentrations during annealing are related to the electrical properties of the bulk InP material. (C) 2002 American Institute of Physics.

Dielectric relaxation of poled polymer DCNP/PMMA

We have prepared the polymer thin films of a 3-(1,1-dicyanothenyl)-1-phenyl-4,5-dihydro-1H-pyrazole (DChTP)/poly (methyl methacrylate) (PMMA) guest-host system by spin coating. In order to investigate their temporal and temperature stability, we have measured their dielectric relaxation spectra including the frequency dependence of the real and imaginary parts of dielectric constants. The investigated frequency ranged from 50 Hz to 10 MHz. The measured temperature range above the glass transition temperature T-g (95 degrees C) of the DCNP/PMMA system was from 95 degrees C to 1250C. By using the Adam-Gibbs model, the temperature dependence of the characteristic time tau above T-g was fitted, and the values of the characteristic times tau below T-g were estimated. The lifetimes of the polymer were evaluated by the Kohlrausch-Williams Watts (KWW) empirical decay model. (C) 2000 Elsevier Science B.V. All rights reserved.

Intrasubband and intersubband transitions in lightly and heavily doped GaAs/AlGa1-xAs multiple quantum wells

We use a polarizer to investigate quantum-well infrared absorption, and report experimental results as follows. The intrasubband transition was observed in GaAs/AlxGa1-xAs multiple quantum wells (MQWs) when the incident infrared radiation (IR) is polarized parallel to the MQW plane. According to the selection rule, an intrasubband transition is forbidden. Up to now, most studies have only observed the intersubband transition between two states with opposite parity. However, our experiment shows not only the intersubband transitions, but also the intrasubband transitions. In our study, we also found that for light doping in the well (4x10(18) cm(-3)), the intrasubband transition occurs only in the lowest subband, while for the heavy doping (8x10(18) cm(-3)), such a transition occurs not only in the lowest subband, but also in the first excited one, because of the electron subband filling. Further experimental results show a linear dependence of the intrasubband transition frequency on the root of the well doping density. These data are in good agreement with our numerical results. Thus we strongly suggest that such a transition can be attributed to plasma oscillation. Conversely, when the incident IR is polarized perpendicular to the MQW plane, intersubband-transition-induced signals appear, while the intrasubband-transition-induced spectra disappear for both light and heavy well dopings. A depolarization blueshift was also taken into account to evaluate the intersubband transition spectra at different well dopings. Furthermore, we performed a deep-level transient spectroscopy (DLTS) measurement to determine the subband energies at different well dopings. A good agreement between DLTS, infrared absorption, and numerical calculation was obtained. In our experiment, two important phenomena are noteworthy: (1) The polarized absorbance is one order of magnitude higher than the unpolarized spectra. This puzzling result is well explained in detail. (2) When the IR, polarized perpendicular to the well plane, normally irradiates the 45 degrees-beveled edge of the samples, we only observed intersubband transition spectra. However, the intrasubband transition signals caused by the in-plane electric-field component are significantly absent. The reason is that such in-plane electric-field components can cancel each other out everywhere during the light propagating in the samples. The spectral widths of bound-to-bound and bound-to-continuum transitions were also discussed, and quantitatively compared to the relaxation time tau, which is deduced from the electron mobility. The relaxation times deduced from spectral widths of bound-to-bound and bound-to-continuum transitions are also discussed, and quantitatively compared to the relaxation time deduced from electron mobility. [S0163-1829(98)01912-2].

Short range scattering mechanism of type-II GaSb/GaAs quantum dots on the transport properties of two-dimensional electron gas

We have studied the scattering process of AlGaAs/GaAs two-dimensional electron gas with the nearby embedded GaSb/GaAs type-II quantum dots (QDs) at low temperature. Quantum Hall effect and Shubnikov-de Haas oscillation were performed to measure the electron density n(2D), the transport lifetime tau(t) and the quantum lifetime tau(q) under various biased gate voltage. By comparing measured results of QDs sample with that of reference sample without embedded QDs, mobilities (transport mobility mu(t) and quantum mobility mu(q)) dominated by GaSb QDs scattering were extracted as functions of n(2D). It was found that the ratios of tau(t) to tau(q) were varying within the range of 1-4, implying the scattering mechanism belonging to the sort of short-range interaction. In the framework of Born approximation, a scattering model considering rectangular-shaped potential with constant barrier height was successfully applied to explain the transport experimental data. In addition, an oscillating ratio of tau(t)/tau(q) with the increasing n(2D) was predicted in the model.

回转窑热解处理废锌锰电池试验研究

我国电池生产量已经达到209亿节（2003年），多年来一直占据世界第一大电池生产国的地位，其中锌锰电池占大多数。废锌锰电池丢弃后，其中的重金属物质会逐渐渗透到地下，污染土壤和水体。重金属在生物体内富集，会使生物体致畸或致变。但同时，废锌锰电池中也含有大量有用的资源如锌、二氧化锰等。应对其进行回收利用，变废为宝。本文介绍了废锌锰电池回收处理的主要技术及研究进展，不同的处理技术回收废锌锰电池时的目标产物各不相同，但一般可分为以下几种：以单质形式回收锌、锰和汞；以合金的形式回收锌和锰；回收锌和二氧化锰；回收各金属元素制备复合微量元素肥料；回收锌、锰元素制备锰锌铁氧体；回收锌、锰元素制备硫酸锌和碳酸锰等。本文对一些废锌锰电池回收处理技术的优缺点从无害化程度、资源化程度、产品等级、工艺要求以及二次污染五个方面进行了分析和比较。在对国内外废锌锰电池回收处理技术进行分析比较的基础上提出了一种成本较低、可操作性较强的处理技术：先以干法除去废锌锰电池中的汞，然后以湿法除去其它的有害重金属并进一步加工制备有机螯合微量元素肥料。 本文以回转窑中物料停留时间的经验公式和传热学的知识设计和计算了回转窑的长度和内径尺寸、电热丝的功率以及外围的保温材料厚度等参数。用保温材料和润滑油相结合的方式对回转窑的连接部分实行密封。通过调整回转窑的转速和回转窑支架两端高度差的方式控制物料在回转窑中的停留时间，从而调节热解时间的长短。利用自动控制设备调节电热丝的功率从而调节试验中的热解温度。利用该回转窑在不同条件下对热解处理废锌锰电池进行了试验研究，热解过程中产生的尾气和颗粒物用一系列吸收液进行吸收和固定。 在热解试验中改变影响热解过程的三种因素：热解温度、热解时间和载气流速并按三因素四水平的正交方法安排试验。改变废锌锰电池热解过程中的热解温度、热解时间和载气流速三种因素进行正交试验并利用正交统计学的方法分析了这三种因素对热解除汞率的影响。利用ICP检测仪测定了各吸收液中汞的含量，并分析热解气体产物经过系列吸收液时汞被吸收的情况以及汞的形态分布。利用气相色谱仪对尾气成分进行了测定，并对热解过程中产气的过程和规律进行了分析。用X射线衍射测试的方法研究了热解前后锌锰电池的物质形态变化情况。对除汞率的正交统计分析表明，合适的热解条件为：热解温度690℃，热解时间100min，载气流速0.06m3/h，在这种试验条件下热解处理废锌锰电池的除汞率达到100%。同时还得到：热解时间对除汞效果影响最大，热解温度次之，载气流速的影响较小。ICP测试的结果表明：热解尾气在经过试验中设置的吸收瓶后，其中的汞被完全吸收，尾气中95%以上的汞以单质的形式存在。气相色谱分析的结果表明，热解开始后，废锌锰电池中的有机质迅速分解，其产物为C2H4、CH4和H2等。一段时间后，有机质的分解量大幅度减少，同时废电池中的石墨碳和高价金属氧化物发生氧化还原反应，生成CO气体。对废锌锰电池原料以及热解残渣的X射线衍射分析表明，当热解温度为350℃时，X射线衍射图谱上2θ值为35°附近的区域有新峰出现，但不明显，说明有结晶体形成但量不大。500℃时上述峰明显增强，这是由于ZnO和FeO形成了结晶体，同时在2θ值为41°附近有新峰出现，这是高价锰氧化物与石墨碳发生氧化还原反应生成了MnO并形成了结晶体。650℃时，2θ值在41°附近的峰显著增强，且热解过程中形成的峰稳定下来，基本上不再有新的结晶体生成。热解后，高价锰氧化物的相对含量从32.2%下降到4.6%，而MnO的相对含量则从6.4%上升到38.6%。热解后的残渣中晶体物质含量大，金属元素大多以低价态存在，适合于制备有机螯合微量元素肥料。

Chaotic behavior of pulsating heat pipes

Chaotic behavior of closed loop pulsating heat pipes (PHPs) was studied. The PHPs were fabricated by capillary tubes with outer and inner diameters of 2.0 and 1.20 mm. FC-72 and deionized water were used as the working fluids. Experiments cover the following data ranges: number of turns of 4, 6, and 9, inclination angles from 5 degrees (near horizontal) to 90, (vertical), charge ratios from 50% to 80%, heating powers from 7.5 to 60.0 W. The nonlinear analysis is based on the recorded time series of temperatures on the evaporation, adiabatic, and condensation sections. The present study confirms that PHPs are deterministic chaotic systems. Autocorrelation functions (ACF) are decreased versus time, indicating prediction ability of the system is finite. Three typical attractor patterns are identified. Hurst exponents are very high, i.e., from 0.85 to 0.95, indicating very strong persistent properties of PHPs. Curves of correlation integral versus radius of hypersphere indicate two linear sections for water PHPs, corresponding to both high frequency, low amplitude, and low frequency, large amplitude oscillations. At small inclination angles near horizontal, correlation dimensions are not uniform at different turns of PHPs. The non-uniformity of correlation dimensions is significantly improved with increases in inclination angles. Effect of inclination angles on the chaotic parameters is complex for FC-72 PHPs, but it is certain that correlation dimensions and Kolmogorov entropies are increased with increases in inclination angles. The optimal charge ratios are about 60-70%, at which correlation dimensions and Kolmogorov entropies are high. The higher the heating power, the larger the correlation dimensions and Kolmogorov entropies are. For most runs, large correlation dimensions and Kolmogorov entropies correspond to small thermal resistances, i.e., better thermal performance, except for FC-72 PHPs at small inclination angles of theta < 15 degrees.

Photochromic fulgide for holographic recording

(N-4'-methoxy-2-methyl-5-phenyl)-3-pyrryl-ethylidene (isopropylidene) succinic anhydride fulgide, doped in PMMA matrix, exhibits photochromic behavior. The fatigue resistance experiment shows no photodegradation is detected after more than 450 writing-erasing cycles. Study of fulgide material for holographic recording media shows the optimal exposure and the diffraction efficiency is 1047 mJ/cm(2) and 2.26%, respectively, with 10 mum thickness polymer film. Holographic grating with 1680 lines/mm at writing angle theta = 30degrees is also obtained. (C) 2004 Elsevier B.V. All rights reserved.

现代NMR技术在生物医学中的应用－－稀土对大鼠代谢产物的影响及磁共振造影剂性质的研究

近年来，随着脉冲傅里叶变换核磁共振波谱仪灵敏度的提高及计算机技术的进步，使NMR技术在生物领域的应用有了飞速的发展。论文应用NMR技术研究了稀土化合物（硝酸镧）对大鼠体内代谢产物的影响。对Wistar种大鼠按不同剂量给药（灌胃和腹腔注射两种方式）后的尿液和血清中的代谢物质的~1H NMR谱数据进行研究，并结合血清、尿液中生化指标的检测结果，指出稀土作用后大鼠肾脏的肾小管及肝脏线粒体均受到一定程度的损害，随稀土摄入量的增多，损害程度越严重。并提出代谢物中尿素、Suc、Kg、Cit、DMA、DMG、TMAO和氨基酸等可以作为肾脏受损伤的NMR markers，而乙醇、Lac和Tau可作为肝脏受损伤的NMR markers。实验中最小剂量为0.05 mg La(NO_3)_3/kg体重，仍有机体受损的NMR信号，说明稀土的安全剂量小于这一数值。在临床磁共振成像中，造影剂是医学诊断中的一种重要辅助试剂。本文采用NMR水弛豫分析法研究了GdDTPA及Gd(cycle-DTPA-1,2-PN)、Gd(DTPA－BIN)在水溶液和BSA溶液中的弛豫性质，为研究顺磁性金属配合物与蛋白质间相互作用情况提供了有效方法；对配体cycle-DTPA-1,2-pn、DTPA－BIN做了~1H NMR滴定研究，得出其质子解离过程和解离常数，并采用半经验量化计算方法计算了两种配体的质子化过程，得到了与~1H NMR滴定一致的结果。结果表明将NMR实验和量化计算方法结合，是考察复杂配体热力学稳定性的有效方法。

海马环路中的组合突触可塑性与大鼠情绪研究

海马在某些类型的学习和记忆中起着关键的作用，而突触可塑性（synaptic plasticity）为学习和记忆的模型提供了理论基础。在海马环路中，分布着各种类型的可塑性，包括突触特异的Hebbian形式的可塑性，如长时程增强（long-term potentiation，LTP）和长时程抑制（long-term depression，LTD）；稳态可塑性（homeostatic plasticity），如突触缩放（synaptic scaling）。稳态可塑性是一种整体的调控过程，它可以调节神经元甚至神经网络的平衡；而Hebbian可塑性则是突触特异的，即每个突触进行单独调控的过程。 越来越多的研究提示稳态可塑性和Hebbian可塑性之间存在着空间间隙（spatial gap），那么，如何使得神经元可以通过Hebbian可塑性的过程来维持细胞整体的兴奋性就变得尤为重要。一些报道揭示了LTP和LTD可以在同一突触通路中同时被激活，因此，我们提出组合突触可塑性的概念，即LTP和LTD的组合，它在赋予系统灵活性的同时又可以降低噪音维持系统的稳定性。基于此，本文将围绕这个问题而开展实验工作。 通过对海马CA1区锥体神经元的微小兴奋性突触后电流（miniature excitatory synaptic current, mEPSC）进行测定分析，我们发现mEPSC的幅度分布符合双峰正态分布（double-peak normal distribution）。Theta节律刺激（theta burst stimuli, TBS）诱导后，mEPSC的幅度分布发生改变，呈现右移趋势。随后，采用干扰肽Pep-A2特异地阻断LTP而不影响LTD，我们发现Pep-A2不影响基础状态下mEPSC的幅度分布。在干扰肽Pep-A2存在下，TBS诱导对基础状态下mEPSC的幅度分布也没有影响。结果为揭示LTP和LTD的组合可塑性提供了初步的证据，对进一步理解记忆的编码过程提供了一定的基础。社交隔离可以引起实验大鼠产生焦虑样和抑郁样的行为，而性经历可以改变动物的情绪状态，降低焦虑样和抑郁样的反应。然而，性经历后进行社交隔离对大鼠情绪的影响并没有报道。在这部分工作中，雄性大鼠经历一周的社交活动（male-male paired housing）或者性活动（male-female paired housing），随后进行一段时间的隔离（1天，2天或者7天）。我们发现，经历过性活动的大鼠，无论隔离与否都表现出相似的情绪反应，包括焦虑样和抑郁样行为以及超声波（ultrasonic vocalizations，USVs）发放；而未经历过性活动的大鼠，其情绪反应随着隔离时间的不同而不同。这一现象提示我们，先前的性经历可以对抗实验动物对环境应激事件，如社交隔离的反应。

INVESTIGATION OF GAAS/SI MATERIAL BY X-RAY DOUBLE-CRYSTAL DIFFRACTION

GaAs epilayer films on Si substrates grown by molecular-beam epitaxy were investigated by the x-ray double-crystal diffraction method. The rocking curves were recorded for different diffraction vectors of samples. The results show that the unit-cell volumes of GaAs epilayers are smaller than that of the GaAs bulk material. The strained-layer superlattice buffer layer can improve the quality of the film, especially in the surface lamella. The parameter W' = W(expt)/(square-root \gamma-h\/gamma-0/sin 2-theta-B) is introduced to describe the quality of different depths of epilayers. As the x-ray incident angle is increased, W' also increases, that is, the quality of the film deteriorates with increasing penetration distance of the x-ray beam. Therefore, W' can be considered as a parameter that describes the degree of perfection of the epilayer along the depth below the surface. The cross-section transmission electron microscopy observations agree with the results of x-ray double-crystal diffraction.