Spreading resistance analysis for silicon layers with nonuniform resistivity /

"Issued May 1979."

Characteristics of small-signal capacitances of silicon-on-sapphire MOSFETs

The measured inter-electrode capacitances of silicon-on-sapphire (SOS) MOSFETs are presented and compared with simulation results. It is shown that the variations of capacitances with DC bias differ from those of bulk MOSFETs due to change in body potential variation of the SOS device resulting from electron-hole pair generation through impact ionisation.

Evaluation of silicon twinning in hypo-eutectic Al-Si alloys

It is generally accepted that growth of eutectic silicon in aluminium-silicon alloys occurs by a twin plane re-entrant edge (TPRE) mechanism. It has been proposed that modification of eutectic silicon by trace additions occurs due to a massive increase in the twin density caused by atomic effects at the growth interface. In this study, eutectic microstructures and silicon twin densities in samples modified by elemental additions of barium (Ba), calcium (Ca), yttrium (Y) and ytterbium (Yb) (elements chosen due to a near-ideal atomic radii for twinning) in an A356.0 alloy have been determined by optical microscopy, thermal analysis, X-ray diffractometry (XRD) and transmission electron microscopy (TEM). Addition of barium or calcium caused the silicon structure to transform to a fine fibrous morphology, while the addition of yttrium or ytterbium resulted in a refined plate-like eutectic structure. Twin densities in all modified samples are higher than in unmodified alloys, and there are no significant differences between fine fibrous modification (by Ba and Ca) and refined plate-like modification (by Y and Yb). The twin density in all modified samples is less than expected based on the predictions by the impurity induced twining model. Based on these results it is difficult to explain the modification with Ba, Ca, Y and Yb by altered twin densities alone.

Progress in silicon-based quantum computation

We review progress at the Australian Centre for Quantum Computer Technology towards the fabrication and demonstration of spin qubits and charge qubits based on phosphorus donor atoms embedded in intrinsic silicon. Fabrication is being pursued via two complementary pathways: a 'top-down' approach for near-term production of few-qubit demonstration devices and a 'bottom-up' approach for large-scale qubit arrays with sub-nanometre precision. The 'top-down' approach employs a low-energy (keV) ion beam to implant the phosphorus atoms. Single-atom control during implantation is achieved by monitoring on-chip detector electrodes, integrated within the device structure. In contrast, the 'bottom-up' approach uses scanning tunnelling microscope lithography and epitaxial silicon overgrowth to construct devices at an atomic scale. In both cases, surface electrodes control the qubit using voltage pulses, and dual single-electron transistors operating near the quantum limit provide fast read-out with spurious-signal rejection.

Amorphous structures induced in monocrystalline silicon by mechanical loading

Different amorphous structures have been induced in monocrystalline silicon by high pressure in indentation and polishing. Through the use of high-resolution transmission electron microscopy and nanodiffraction, it was found that the structures of amorphous silicon formed at slow and fast loading/unloading rates are dissimilar and inherit the nearest-neighbor distance of the crystal in which they are formed. The results are in good agreement with recent theoretical predictions. (C) 2004 American Institute of Physics.

The R8-BC8 phases and crystal growth in monocrystalline silicon under microindentation with a spherical indenter

The morphology and distribution of high-pressure metastable phases BC8 and R8, formed in monocrystalline silicon under microindentation, were identified and assessed using transmission electron microscopy nanodiffraction analysis. It was discovered that the crystal growth inside the transformation zone was stress-dependent with large crystals in its central region. The crystal size could also be increased using higher maximum indentation loads. The BC8 and R8 phases distributed unevenly across the transformation zone, with BC8 crystals mainly in the center of the zone and smaller R8 fragments in the peripheral regions. Such phase distribution was in agreement with the theoretical residual stress analysis.

Solidification mechanisms of unmodified and strontium-modified hypereutectic aluminium-silicon alloys

The effects of strontium on the solidi. cation mode of hypereutectic aluminium-silicon alloys have been studied. Samples were prepared from an aluminium-17wt% silicon-based alloy and strontium was added at several different concentrations. The development of the microstructure was investigated by cooling curve analysis, interrupted solidi. cation experiments and optical and scanning electron microscopy. It was found that nucleation of primary silicon is suppressed by additions of strontium. The suppressed nucleation results in supersaturation of the liquid prior to nucleation, and an increased growth rate after nucleation. As a result, the silicon crystals become less faceted and more dendritic with increasing strontium additions. Increasing the strontium concentration slightly refined the eutectic spacing and introduced a small amount of fibrous silicon. Electron back-scatter diffraction measurements were performed to determine the crystallographic relation between the primary and eutectic silicon phases. The eutectic silicon in the unmodified alloy does not have any crystallographic relationship with the primary silicon crystals. In contrast, the eutectic silicon crystals in the strontium-modified alloys often share an identical or twin relationship with nearby primary silicon crystals. The incidence of twinning within primary silicon crystals was relatively low and did not appear to increase with strontium additions.

Eutectic grains in unmodified and strontium-modified hypoeutectic aluminum-silicon alloys

Additions of strontium to hypoeutectic aluminum-silicon alloys modify the morphology of the eutectic silicon phase from a coarse platelike structure to a fine fibrous structure. Thermal analysis, interrupted solidification, and microstructural examination of sand castings in this work revealed that, in addition to a change in silicon morphology, modification with strontium also causes an increase in the size of eutectic grains. The eutectic grain size increases because fewer grains nucleate, possibly due to poisoning of the phosphorus-based nucleants, that are active in the unmodified alloy. A simple growth model is developed to estimate the interface velocity during solidification of a eutectic grain. The model confirms, independent of microstructural observations, that the addition of 100 ppm strontium increases the eutectic grain size by at least an order of magnitude compared with the equivalent unmodified alloy. The model predicts that the growth velocity varies significantly during eutectic growth. At low strontium levels, these variations may be sufficient to cause transitions between flake and fibrous silicon morphologies depending on the casting conditions. The model can be used to rationally interpret the eutectic grain structure and silicon morphology of fully solidified aluminum-silicon castings and, when coupled with reliable thermal data, can be used to estimate the eutectic grain size.

The effect of silicon content on the microstructure and creep behavior in die-cast magnesium AS alloys

The effect of increasing levels of silicon on the microstructure and creep properties of high-pressure die-cast Mg-Al-Si (AS) alloys has been investigated. The morphology of the Mg2Si phase in die-cast AS alloys was found to be a function of the silicon content. The Mg2Si particles in castings with up to 1.14 wt pct Si have a Chinese script morphology. For AS21 alloys with silicon contents greater than 1.4 wt pet Si (greater than the alpha-Mg2Si binary eutectic point), some Mg2Si particles have a coarse blocky shape. Increasing the silicon content above the eutectic level results in an increase in the number of coarse faceted Mg2Si particles in the microstructure. Creep rates at 100 hours were found to decrease with increasing silicon content in AS-type alloys. The decrease in creep rate was most dramatic for silicon contents up to 1.1 wt pct. Further additions of silicon of up to 2.64 wt pct also resulted in significant decreases in creep rate.

Voltage control of exchange coupling in phosphorus doped silicon

Motivated by applications to quantum computer architectures we study the change in the exchange interaction between neighbouring phosphorus donor electrons in silicon due to the application of voltage biases to surface control electrodes. These voltage biases create electro-static fields within the crystal substrate, perturbing the states of the donor electrons and thus altering the strength of the exchange interaction between them. We find that control gates of this kind can be used to either enhance or reduce the strength of the interaction, by an amount that depends both on the magnitude and orientation of the donor separation.

Grain refinement efficiency and mechanism of aluminium carbide in Mg-Al alloys

Detailed microscopic examination using optical and electron microscopes suggests that Al4C3, often observed in the central regions of magnesium grains on polished sections, is a potent substrate for primary Mg. Calculations of the crystallographic relationships between magnesium and Al4C3 further support the experimental observations. (c) 2005 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Surface morphology dependent photoluminescence from colloidal silicon nanocrystals

Monodisperse 1-2 nm silicon nanocrystals are synthesized in reverse micelles and have their surfaces capped with either allylamine or 1-heptene to produce either hydrophilic or hydrophobic silicon nanocrystals. Optical characterization (absorption, PL, and time-resolved PL) is performed on colloidal solutions with the two types of surface-capped silicon nanocrystals with identical size distributions. Direct evidence is obtained for the modification of the optical properties of silicon nanocrystals by the surface-capping molecule. The two different surface-capped silicon nanocrystals show remarkably different optical properties.