Influence of ambient atmosphere on the plasmon resonance absorption of Ag/SiOx(0 <= x <= 2) nanocomposite film

Nanocomposite films consisting of nanosized Ag particles embedded in partially oxidized amorphous Si-containing matrices were prepared by radio frequency magnetron co-sputtering deposition. We studied the influence of ambient atmosphere during the preparation and heat-treatment of Ag/SiOx (0 less than or equal to x less than or equal to 2) nanocompositefilm on its optical absorption properties. We found that the plasmon resonance absorption peak shifts to shorter wavelengths with the increasing oxygen content in the SiOx matrix. The analysis indicates that the potential barrier between Ag nanoparticles and SiOx matrix increases with the increasing x value, which will induce the surface resonance state to shift to higher energy. The electrons in the vicinity of the Fermi level of Ag nanoparticles must absorb more energy to be transferred to the surface resonance state with the increasing x value. It was also found that the plasmon resonance absorption peaks of the samples annealed in different ambient atmospheres are located at about the same position. This is because the oxidation surface layer is dense enough to prevent the oxygen from penetrating into the sample to oxidize the silicon in the inner layer.

The fabrication of thick SiO2 layer by anodization

Silicon-based silica waveguide (SiO2/Si) devices have huge applications in optical telecommunication. SiO2 up to 25-mu m thick is necessary for some passive SiO2/Si waveguide devices. Oxidizing porous silicon to obtain thick SiO2 as cladding layer is presented. The experimental results of porous layer and oxidized porous layer formation were given. The relationship between cracking of SiO2 and temperature varying rate was given experimentally. Such conclusions are drawn: oxidation rate of porous silicon is several orders faster than that of bulk silicon; appropriate temperature variation rate during oxidation can prevent SiO2 on silicon substrates from cracking, and 25 mu m thick silicon dioxide layer has been obtained. (C) 2000 Elsevier Science B.V. All rights reserved.

Microstructure of SiOx : H films prepared by plasma enhanced chemical vapor deposition

The micro-Raman spectroscopy and infrared (IR) spectroscopy have been performed for the study of the microstructure of amorphous hydrogenated oxidized silicon (alpha-SiOx,:H) films prepared by Plasma Enhanced Chemical Vapor Deposition technique. It is found that a-SiOx:H consists of two phases: an amorphous silicon-rich phase and an oxygen-rich phase mainly comprised of HSi-SiO2 and HSi-O-3. The Raman scattering; results exhibit that the frequency of TO-like mode of amorphous silicon red-shifts with decreasing size of silicon-rich region. This is related to the quantum confinement effects, similar to the nanocrystalline silicon.

Photoluminescence enhancement of porous silicon by organic cyano compounds

A pronounced photoluminescence enhancement on chemically oxidized porous silicon was induced by a series of organic cyano compounds including 1,2-dicyanoethylene (CE), 1,3-dicyanobenzene (1,3-CB), 1,4-dicyanobenzene (1,4-CB), 1-cyanonaphthalene (1-CN), and 9-cyanoanthracene (9-CA). Photoluminescence enhancement effects were reversible for all compounds studies in this work. A dependence of photoluminescence enhancement on the steric effect and the electronic characteristics of these compounds and the structure of the porous silicon substrates were analyzed in terms of the photoluminescence enhancing factors. Surface chemical composition examined by Fourier transform infrared (FTIR) spectra demonstrated that the surface Si-H bonds were not changed and no new luminescent compounds were formed on porous silicon surface during adsorption of cyano compounds. A mechanism based on induced surface states acting as radiative recombination centers by cyano compounds adsorption was suggested.

Growth mechanism of InGaAlAs waveguides by narrow stripe selective MOVPE

Growth mechanism of InGaAlAs waveguides by narrow stripe selective MOVPE has been studied. Both the InGaAlAs bulk waveguides and the InGaAlAs MQW waveguides were successful grown on the patterned substrates at optimized growth conditions. The mask stripe width varied from 0 to 40 mu m, while the window region width between a pair of mask stripes was fixed 2.5 mu m. These selectively grown waveguides were covered by specific InP layers, which can keep the InGaAlAs waveguides from being oxidized during the fabrication of devices. In particular, there exhibit strong dependences of the photoluminescence (PL) spectrum on the mask stripe width for the samples. The results were explained in considering both the migration effect from a masked region (MMR) and the lateral vapor diffusion effect (LVD).

Narrow stripe selective growth of InGaAlAs waveguides used for buried heterostructure lasers - art. no. 63210I

The narrow stripe selective growth of the InGaAlAs bulk waveguides and InGaAlAs MQW waveguides was first investigated. Flat and clear interfaces were obtained for the selectively grown InGaAlAs waveguides under optimized growth conditions. These selectively grown InGaAlAs waveguides were covered by specific InP layers, which can keep the waveguides from being oxidized during the fabrication of devices. PL peak wavelength shifts of 70 nm for the InGaAlAs bulk waveguides and 73 nm for the InGaAlAs MQW waveguides were obtained with a small mask stripe width varying from 0 to 40 gm, and were interpreted in considering both the migration effect from the masked region (MMR) and the lateral vapor diffusion effect (LVD). The quality of the selectively grown InGaAlAs MQW waveguides was confirmed by the PL peak intensity and the PL FWHM. Using the narrow stripe selectively grown InGaAlAs MQW waveguides, then the buried heterostructure (BH) lasers were fabricated by a developed unselective regrowth method, instead of conventional selective regrowth. The InGaAlAs MQW BH lasers exhibit good performance characteristics, with a high internal differential quantum efficiency of about 85% and an internal loss of 6.7 cm(-1).

四川和云南汉族长寿老人长寿机理研究

随着社会的发展，人均寿命的延长，人口老龄化已经成为我国不可回避的社会 问题。老年人在医疗卫生保健方面的花费远远超过普通人群。健康长寿老人能避 免或者延缓年龄相关疾病的发生，从而减少在卫生保健方面的花费；另外，长寿 老人的子女在年龄相关疾病方面的患病率也显著低于年龄相匹配的对照组。因 此，开展健康长寿方面的研究，一方面可以提高老年人的生活质量，另一方面可 以改善由于人口老龄化而引起的社会问题。 我国长寿老人大多零散分布在乡区，并且由于长寿老人的身体条件等原因， 给完整的收集相关数据带来困难。国内关于长寿的研究主要集中在城镇，而且由 于人群、地域、生活方式等差异我们也不能完全借鉴国外的研究成果。因此,我 们对四川和云南汉族健康长寿老人进行横断面研究,并对其长寿机理进行探索。 从亲缘关系上我们把样品分为：长寿组、血缘组和无血缘组三个组；从年龄上分 为：≤59、60-89、90-94 和≥95 四个组。在实验中，我们测定了常规体检指标， 常见促炎细胞因子和抗炎细胞因子水平以及其调控区的单核苷酸多态性。 一般认为随着年龄增加血糖水平升高，并且高水平的 HDL-C 和高比率的 HDL-C/TC 以及低TC,TG 和LDL-C 水平有利于长寿。都江堰长寿老人血糖水平偏 低，显著低于血缘组和无血缘组以及其他年龄组；调整年龄后，都江堰≥95 岁 年龄组的血糖水平显著高于90-94 年龄组；血糖水平在性别间不存在显著差异。 都江堰长寿老人LDL-C 水平在90-94 和≥95 年龄组显著低于其他年龄组，≥95 年龄组显著低于90-94 年龄组；调整性别后，90-94 年龄组女性的LDL-C 水平显 著高于男性水平，其他年龄组在性别间差异不显著；女性≥95 年龄组显著低于 90-94 年龄组，但在男性中差异不显著。TG 和TC 水平在都江堰和红塔两地各组 中的变化趋势都存在着差异，在性别间比较发现两地各年龄组变化趋势都一致， 仅在90-94 年龄组女性都显著高于男性。HDL-C 水平和HDL-C/TC 在都江堰和红 塔两地各组中变化趋势不一致，调整性别后HDL-C/TC 在90-94 年龄组两地女性 的比率都显著大于男性。通常IL6、IL10 和TNFα 水平随着年龄增加而升高。云 南长寿老人的IL6 水平显著高于血缘组和无血缘组，性别之间的差异不显著。 IL10 水平长寿组显著高于无血缘组，TNFα 水平在各组间差异不显著，由于这两 种细胞因子在绝大多数个体中呈本底水平表达，很难分析年龄与它们水平的相关性。在这三种细胞因子调控区的常见SNPs 位点上，许多研究表明il10-1082 和 il6-174 位点和长寿存在着一定的相关性，tnfα-308 位点与长寿不存在相关性。 在我们收集的样品中il6-174 位点不存在多态性。男性个体的il10-592A 和-819T 的等位基因频率在长寿组显著高于无血缘组，在-1082 位点与长寿不存在相关性。 tnfα-238A 和-308A 等位基因频率在长寿组中显著高于无血缘组，在各组单倍型 间的差异显著，G-G 单倍型在长寿组中呈下降趋势；调整性别后，两位点的等位 基因频率在各组间的差异不显著，但单倍型在各组间差异显著，变化趋势同调整 性别前一致。 总之，四川都江堰长寿人群的血糖水平和LDL-C 水平比较低，都江堰和云南 红塔两地长寿老人的血脂水平存在着地域差异。与前人的研究结果比较,汉族人 群的IL6、IL10 和TNFα水平以及常见的启动区SNPs 位点可能存在人种差异。

Fabrication of Silicon-Based Template-Assisted Nanoelectrode Arrays and Ohmic Contact Properties Investigation

A convenient fabrication technology for large-area, highly-ordered nanoelectrode arrays on silicon substrate has been described here, using porous anodic alumina (PAA) as a template. The ultrathin PAA membranes were anodic oxidized utilizing a two-step anodization method, from Al film evaporated on substrate. The purposes for the use of two-step anodization were, first, improving the regularity of the porous structures, and second reducing the thickness of the membranes to 100 similar to 200 nm we desired. Then the nanoelectrode arrays were obtained by electroless depositing Ni-W alloy into the through pores of PAA membranes, making the alloy isolated by the insulating pore walls and contacting with the silicon substrates at the bottoms of pores. The Ni-W alloy was also electroless deposited at the back surface of silicon to form back electrode. Then ohmic contact properties between silicon and Ni-W alloy were investigated after rapid thermal annealing. Scanning electron microscopy (SEM) observations showed the structure characteristics, and the influence factors of fabrication effect were discussed. The current voltage (I-V) curves revealed the contact properties. After annealing in N-2 at 700 degrees C, good linear property was shown with contact resistance of 33 Omega, which confirmed ohmic contacts between silicon and electrodes. These results presented significant application potential of this technology in nanosize current-injection devices in optoelectronics, microelectronics and bio-medical fields.

THE OXIDATION-KINETICS OF THIN POLYCRYSTALLINE SILICON FILMS

The oxidation dynamics and morphology of undoped and heavily phosphorus-doped polycrystalline silicon films oxidized at a wide temperature and time range in dry and wet O2 atmosphere have been investigated. It is shown that the oxidation rates of polycrystalline silicon films are different from that of single-crystal silicon when the oxidation temperature is below 1000-degrees-C. There is a characteristic oxidation time, t(c), under which the undoped polysilicon oxide is not only thicker than that of (100)-oriented single-crystal silicon, but also thicker than that of (111)-oriented single-crystal silicon. For phosphorus-doped polycrystalline silicon films, the oxide thickness is thinner not only than that of (111)-oriented, single-crystal silicon, but also thinner than that of (100)-oriented, single-crystal silicon. According to TEM cross-sectional studies, these characteristics are due to the enhanced oxidation at grain boundaries of polycrystalline silicon films. A stress-enhanced oxidation model has been proposed and used to explain successfully the enhanced oxidation at grain boundaries of polycrystalline silicon films. Using this model, the oxidation linear rate constant of polysilicon (B/A)poly has been calculated and used in the modeling of the oxidation dynamics. The model results are in good agreement with the experimental data over the entire temperature and time ranges studied.

CHARACTERISTICS OF OXIDES FORMED FROM A SI0.5GE0.5

X-ray photoelectron spectroscopy (XPS) combined with Auger electron spectroscopy (AES) have been used to study the oxides from a Si0.5Ge0.5 alloy grown by molecular beam epitaxy (MBE). The oxidation was performed at 1000 degrees C wet atmosphere. The oxide consists of two layers: a mixed (Si,Ge)O-x layer near the surface and a pure SiOx layer underneath. Ge is rejected from the pure SiOx and piles up at the SiOx/SiGe interface. XPS analysis demonstrates that the chemical shifts of Si 2p and Ge 3d in the oxidized Si0.5Ge0.5 are significantly larger than those in SiO2 and GeO2 formed from pure Si and Ge crystals.

LPCVD Growth of 3C-SiC on Si Mesas and SiO2/Si Substrates for MEMS Applications

This paper presents the development of LPCVD growth of 3C-SiC thin films grown on Si mesas and thermally oxidized SiO2 masks over Si with an area of 150 × 100μm^2 and SiO2/Si substrates. The growth has been performed via chemical vapor deposition using SiH4 and C2H4 precursor gases with carrier gas of H2. 3C-SiC films on these substrates were characterized by optical microscopy, X-ray diffraction （ XRD ）, X-ray photoelectron spectroscopy （ XPS ）, scanning electron microscopy （SEM） and room temperature Hall effect measurements. It is shown that there were no voids at the interface between 3C-SiC and SiO2.

A 1.3μm Low-Threshold Edge-Emitting Laser with AlInAs-Oxide Confinement Layers

A 1.3μm low-threshold edge-emitting AlGaInAs multiple-quantum-well(MQW) laser with AlInAs-oxide confinement layers is fabricated.The Al-contained waveguide layers upper and low the active layers are oxidized as current-confined layers using wet-oxidation technique.This structure provides excellent current and optical confinement,resulting in 12.9mA of a low continuous wave threshold current and 0.47W/A of a high slope efficiency of per facet at room temperature for a 5-μm-wide current aperture.Compared with the ridge waveguide laser with the same-width ridge,the threshold current of the AlInAs-oxide confinement laser has decreased by 31.7% and the slope efficiency has increased a little.Both low threshold and high slope efficiency indicate that lateral current confinement can be realized by oxidizing AlInAs waveguide layers.The full width of half maximum angles of the Al-InAs-oxide confinement laser are 21.6° for the horizontal and 36.1° for the vertical,which demonstrate the ability of the AlInAs oxide in preventing the optical field from spreading laterally.

The fabrication of thick SiO2 layer by anodization

Silicon-based silica waveguide (SiO2/Si) devices have huge applications in optical telecommunication. SiO2 up to 25-mu m thick is necessary for some passive SiO2/Si waveguide devices. Oxidizing porous silicon to obtain thick SiO2 as cladding layer is presented. The experimental results of porous layer and oxidized porous layer formation were given. The relationship between cracking of SiO2 and temperature varying rate was given experimentally. Such conclusions are drawn: oxidation rate of porous silicon is several orders faster than that of bulk silicon; appropriate temperature variation rate during oxidation can prevent SiO2 on silicon substrates from cracking, and 25 mu m thick silicon dioxide layer has been obtained. (C) 2000 Elsevier Science B.V. All rights reserved.

应用负载型纳米铁去除饮用水中砷的研究

砷是毒性最强的元素之一，水体中砷的污染己经引起人们广泛的关注。我国的新疆、内蒙、山西和台湾等省和地区地下水砷含量严重超标。全球共有5,000多万人遭受高砷饮用水的威胁，其中中国有1,500多万，是饮用水砷污染最严重的国家之一。WHO推荐饮用水砷的最高允许浓度从原来的50 µg•L-1已降至10 µg•L-1。更为严格的砷卫生标准的颁布，对作为饮用水源的地下水中的砷去除工艺提出了更高的要求。吸附法除砷比膜法、混凝法和离子交换法更安全、简便，是砷去除工艺中最有效的方法之一。 首先，本研究通过优化制备条件（包括炭种类的选择、炭的粒径大小、还原剂的浓度及滴定速率、反应温度、铁盐的种类及浓度、分散剂的比例及浓度），制备了负载型纳米铁。考虑到砷的去除效率、工程应用的可行性以及经济性，最优的制备条件如下：选用粒径为20~40目煤质炭，在室温、一定的分散剂比例及浓度，0.2 M KBH4滴速为20 d•min-1时所制备的Fe/炭为82.0 mg•g-1；纳米铁在活性炭孔内呈针状，其直径为30~500 nm，长度为1,000~2,000 nm。绝大多数的铁都负载到活性炭内部，这在处理水时铁不流失很重要。 其次，利用制备的负载型纳米铁作吸附载体，进行了饮用水中As(Ⅴ)的吸附去除实验。研究了该吸附剂对As(Ⅴ)的吸附等温线、动力学以及影响动力学的各种因素（包括As(Ⅴ)的不同初始浓度、吸附剂用量、pH值、共存离子和不同温度）、pH值、共存离子等环境条件对As(Ⅴ)去除的影响；以及吸附剂的再生及再生后的吸附效率等。研究发现在前12 h内吸附较快，72 h时达到了平衡。用Langmuir 吸附等温式估算出As(Ⅴ)的吸附量为12.0 mg•g-1。该吸附剂在pH 6.5， (25±2)℃， As(Ⅴ)初始浓度为2 mg•L-1，吸附剂用量为1.0 g•L-1时，As(Ⅴ)的去除率为75.2%；当把吸附剂的用量增加到1.5 g•L-1时，As(Ⅴ)的去除率可达99.9%以上。吸附剂可以用0.1M的NaOH浸泡12 h后即可再生，再生效率较高。常见的阴离子中PO43-、SiO32-对As(Ⅲ)的去除抑制较大，而SO42-、CO32-、C2O42-等离子对砷的去除影响较小。Fe2+对As(Ⅲ)的吸附抑制作用较大而其它阳离子影响不大。吸附剂可用0.1 M NaOH 有效再生，并且具有良好的机械性能。实验室初步实验数据表明，该吸附剂对饮用水除砷具有较好的应用前景。 第三，利用实验室制备的负载型纳米铁对饮用水中As(Ⅲ)的吸附去除也进行了研究。考察了吸附等温线、动力学以及影响动力学的各种因素、pH值、共存离子等环境条件对As(Ⅲ)去除的影响；以及吸附剂的再生及再生后的吸附效率等。研究发现，该吸附剂在pH 6.5， (25±2)℃， As(Ⅲ)初始浓度为2 mg•L-1，吸附剂用量为1.0 g•L-1时， 对As(Ⅲ)的去除率为99.8%；其吸附容量为1.996mg•g-1。吸附过程中部分As(Ⅲ)被氧化。与As(Ⅴ)的吸附相比，该吸附剂对As(Ⅲ)的效率比较高-而常见的其它除砷吸附剂如载铁纤维棉等，对As(Ⅴ)的效率比As(Ⅲ)高，为有效去除As(Ⅲ)，常常需要专门加上氧化这一过程。 最后，利用负载型纳米铁对饮用水中As(Ⅲ) 的氧化性能进行考察，发现该吸附剂不但能够有效吸附去除饮用水中的砷，而且还能把As(Ⅲ)有效地氧化为As(Ⅴ)。经过对吸附剂的构成组分分析发现，活性炭表面因富含多种官能团而对三价砷的氧化作用最大；其次是纳米铁也能把As(Ⅲ)氧化为As(Ⅴ)。

调节LDLR及VCAM-1基因表达的微生物代谢产物的研究

为了筛选对靶基因LDLR和VCAM-1的表达具有调节作用的生物活性物质，建立了两个基于重组人细胞系的高通量的筛选模型，使用荧光素酶在96-孔版上来筛选对上述靶基因的表达具有调节作用的微生物代谢产物。模型之一是来自于人肝HepG2细胞系的重组L39细胞，用于筛选增加LDLR报告基因表达的生物活性物质，以期发现新的具有降胆固醇作用的药物。筛选之二为来源于细胞系ECV304的重组细胞株Nl-14,用于筛选抑制VCAM-1基因表达的活性物质，以期发现治疗风湿性关节炎等免疫性疾病治疗的药物。上述筛选系统均是稳定转染的细胞系，分别含有与荧光素酶报告基因相融合的LDLR或VCAM-1基因的转录调节元件。通过对6300株微生物的总计12600个样品的筛选，共发现和分离了17个活性化合物并进行了结构解析。其中两个被命名为Cladospolede D和Zelkovamycin的化合物被确定为新的化合物。由真菌 FO-6605的发酵液提取得到的一个化合物对LDLR报告基因的表达具有很强的上调作用，其SC200为1 Onmol/L a使用荧光标记的LDL检测到该化合物对于HepG2细胞膜上LDLR具有剂量依赖的增强作用。由真菌FO-5897的发酵液中分离到了一个已知的化合物Ascofuranone，该化合物曾经被报道具有降血脂抗肿瘤的活性。值得注意的是我们首次发现了该化合物同时具有抑制 VCAM-1报告基因表达和增强LDLR报告基因表达的作用，该发现有可能会对其降血脂作用的深入研究提供帮助。由海洋真菌FT-0012产生的化合物Cladospolede D为一个12-员环的大环内酷类的化合物，该化合物对两个测活系统均显示出无选择性的抑制作用形态学研究显示该真菌属于Cladosporiun属。另外一个由土壤放线菌K96-670产生的新化合物为一个环八肤类的化合物，经~1H~1-H COSY,~(13)C-H COSY,~(13)C-~1H HMQC, ~(15)N-~1H HMQC,~(15)-~1N HHMBC等波谱学研究得知该化合物的分子结构中含有六个非普通的氨基酸和两个普通氨基酸。该化合物对VCAM-I报告基因的表达显示出非常好的选择性的抑制活性，其IC50值为9.5ug/ml.形态学的研究表明该菌株属于链霉菌属。 在筛选过程中从来源于云南省西双版纳的土壤中分离到了一株编号为YIM1272的放线菌，经包括形态学、生理一生化和16S rDNA在内的分类学研究，确定该菌株为链霉菌属的一个新种，被命名为佩版纳链霉菌，(Streptomyces.bannaensis．sp.nov）。