ZnO 单晶的N 型掺杂研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

ZnO 薄膜生长及相关物性研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

气相传输法生长掺磷、掺锑ZnO 单晶

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

MVPE ZnO 薄膜材料的制备及性能研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

氢等离子体处理对ZnO薄膜光电性能的影响

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

ZnO厚膜的金属源气相外延生长

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

First-principles study on the structural and electronic properties of ultrathin ZnO nanofilms

First-principles calculations; ZnO nanofilms; Electronic properties; Quantum effects； NANOBELTS; NANORINGS; WURTZITE; ENERGY Abstract: Using first-principles density-functional calculations, we have studied the structural and electronic properties Of Ultrathin ZnO {0001} nanofilms. The structural parameters, the charge densities, band structures and density of states have been investigated. The results show that there are remarkable charge transfers from Zn to O atoms in the ZOO nanofilms. All the ZOO nanofilms exhibit direct wide band gaps compared with bulk counterpart, and the gap decreases with increased thickness of the nanofilms. The decreased band gap is associated with the weaker ionic bonding within layers and the less localization of electrons in thicker films. A staircase-like density of states occurs at the bottom of conduction band, indicating the two-dimensional quantum effects in ZnO nanofilms.

Low temperature annealing effects on the structure and optical properties of ZnO films grown by pulsed laser deposition

ZnO thin films were deposited on glass substrates at room temperature (RT) similar to 500 degrees C by pulsed laser deposition (PLD) technique and then were annealed at 150-450 degrees C in air. The effects of annealing temperature on the microstructure and optical properties of the thin films deposited at each substrate temperature were investigated by XRD, SEM, transmittance spectra, and photoluminescence (PL). The results showed that the c-axis orientation of ZnO thin films was not destroyed by annealing treatments: the grain size increased and stress relaxed for the films deposited at 200-500 degrees C, and thin films densified for the films deposited at RT with increasing annealing temperature. The transmittance spectra indicated that E-g of thin films showed a decreased trend with annealing temperature. From the PL measurements, there was a general trend, that is UV emission enhanced with lower annealing temperature and disappeared at higher annealing temperature for the films deposited at 200-500 degrees C; no UV emission was observed for the films deposited at RT regardless of annealing treatment. Improvement of grain size and stoichiometric ratio with annealing temperature can be attributed to the enhancement of UV emission, but the adsorbed oxygen species on the surface and grain boundary of films are thought to contribute the annihilation of UV emission. It seems that annealing at lower temperature in air is an effective method to improve the UV emission for thin films deposited on glass substrate at substrate temperature above RT.

闭管化学气相传输法生长ZnO单晶方法

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Mg-Sb共掺杂p型ZnO薄膜的制备方法

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在金属衬底上生长ZnO薄膜的方法

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在Si衬底上生长ZnO薄膜的方法

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在蓝宝石衬底上二次生长高质量ZnO单晶厚膜的方法

于AD批量导入至AEzhangdi

在蓝宝石衬底上二次生长高质量ZnO单晶厚膜的方法

于AD批量导入至AEzhangdi

一种改善ZnO薄膜欧姆接触的方法

本发明公开了一种改善ZnO薄膜欧姆接触的方法，该方法是在沉积金属电极之前，利用氢等离子体处理ZnO薄膜的电极接触区域，然后在经氢等离子体处理的ZnO薄膜电极接触区域沉积双层金属电极，形成欧姆接触。由于氢等离子体处理导致氢扩散进入ZnO薄膜，提高了接触区域ZnO薄膜的载流子浓度，减小了接触区域ZnO薄膜的电阻率，从而可以显著降低ZnO薄膜和金属的接触电阻，改善其欧姆接触特性。此外，在MS技术中，由于溅射出的粒子具有较高能量，使得ZnO/Ti界面原子能充分混合，可以提高Ti/Au接触在ZnO薄膜上的粘附性。利用该发明最终可以得到粘附良好、接触电阻低的欧姆接触，为实现ZnO薄膜电子器件奠定了基础。