Studies on the effects of silver carp (Hypophthalmichthys molitrix) on the Phytoplankton in a shallow hypereutrophic lake through an enclosure experiment

The responses of nutrients, water transparency, zooplankton and phytoplankton to a gradient of silver carp biomass were assessed using enclosure methods. The gradient of four silver carp biomass levels was set as follows: 0, 116, 176 and 316 g m(-2). Nutrients did not show any statistically significant differences among the treatments. An Outburst of Daphnia only occurred in fishless enclosures where phytoplankton biomass was the lowest and water clarity significantly increased. While among fish enclosures, the small-sized Moina micrura dominated throughout the experiment and both zooplankton and phytoplankton biomasses decreased with increased fish biomass. No large colonial cyanobacterial blooms occurred in the fishless enclosures as predicted. This might be due to low water temperature. short experiment time and the occurrence of large bodied Daphnia in our experiment. Cryptophyta was the most dominant group in most of the enclosures and the lake water throughout the experiment. The fishless enclosure had much lower proportion of Cyanophyta but higher proportion of Trachelomonas sp.

Impact of thickness of GaN buffer layer on properties of AlN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition

We studied the impact of the thickness of GaN buffer layer on the properties of distributed Bragg reflector (DBR) grown by metalorganic chemical vapor deposition (MOCVD). The samples were characterized by using metallographic microscope, transmission electron microscope (TEM), atomic force microscopy (AFM), X-ray diffractometer (XRD) and spectrophotometer. The results show that the thickness of the GaN buffer layer can significantly affect the properties of the DBR structure and there is an optimal thickness of the GaN buffer layer. This work would be helpful for the growth of high quality DBR structures.

Reduction of tensile stress in GaN grown on Si(111) by inserting a low-temperature AlN interlayer

This study describes the growth of a low-temperature AlN interlayer for crack-free GaN growth on Si(111). It is demonstrated that, in addition to the lower growth temperature, growth of the AlN interlayer under Al-rich conditions is a critical factor for crack-free GaN growth on Si(111) substrates. The effect of the AlN interlayer thickness and NH3/TMA1 ratios on the lattice constants of subsequently grown high temperature GaN was investigated by X-ray triple crystal diffraction. The results show that the elimination of micro-cracks is related to the reduction of the tensile stress in the GaN epitaxial layers. This was also coincident with a greater number of pits formed in the AlN interlayer grown under Al rich conditions. It is proposed that these pits act as centers for the generation of misfit dislocations, which in turn leads to the reduction of tensile stress. (C) 2004 Elsevier B.V. All rights reserved.

Luminescence study of (11(2)over-bar0) GaN film grown by metalorganic chemical-vapor deposition

Investigations on photoluminescence properties of (11 (2) over bar0) GaN grown on (1 (1) over bar 02) Al2O3 substrate by metalorganic chemical-vapor deposition are reported. Several emission lines not reported before are observed at low temperature. The sharp peak at 3.359 eV is attributed to the exciton bound to the neutral acceptor. Another peak at 3.310 eV represents a free-to-bound, probably a free electron-to-acceptor, transition. The 3.241 and 3.170 eV lines are interpreted as phonon replica lines of the 3.310 eV line. The phonon energy is 70 meV, consistent with the energy of transverse optical E-1 phonon. The optical properties of the lines are analyzed. (C) 2003 American Institute of Physics.

Solid-state qubit measurement with single electron transistors

In this paper we consider the continuous weak measurement of a solid-state qubit by single electron transistors (SET). For single-dot SET, we find that in nonlinear response regime the signal-to-noise ratio can violate the universal upper bound imposed quantum mechanically on any linear response detectors. We understand the violation by means of the cross-correlation of the detector currents. For double-dot SET, we discuss its robustness against wider range of temperatures, quantum efficiency, and the relevant open issues unresolved.

评一种高效的群签名

群签名是对一般数字签名的一种扩展，有很多重要应用．最近提出的一种高效的群签名，被声称没有采用知识签名，从而签名和验证的计算量远远少于著名的ACJT方案．在本文中，我们指出该方案其实采用了知识签名，但是由于使用上的不当，使得该方案完全不安全，即两个群成员合谋就可以伪造出对任意消息的群签名，且打开算法是无效的．[第一段]

榆林市耕地资源与粮食安全研究

耕地资源是粮食生产及粮食安全的基础。针对世界粮价飙升所引发的"粮食危机",我国的粮食安全又重新成为社会所关注的焦点。在分析榆林市1949-2005年耕地资源变化的基础上,对耕地面积和粮食产量的年际变化率及不同历史阶段两者的相关关系进行分析,提出了榆林市粮食安全的保障措施。结果表明:1949-2005年,榆林市耕地面积及人均耕地面积均呈减少趋势;耕地数量变化对粮食生产具有根本的约束作用,但耕地面积与粮食产量的年际变化率的趋势并不完全同步,农业科技投入不仅抵消了因耕地面积减少所导致的粮食减产,而且可以使粮食总产出现较大增长,但耕地数量仍是稳定粮食总产的重要因素。

黄土高原坡地密植枣园土壤质地与肥力状况分析

采用田间取样与实验室分析相结合的方法,研究了黄土高原坡地密植枣园土壤质地与肥力状况。结果表明,坡地枣园土壤肥力低,氮、磷严重缺乏,钾相对丰富,土壤属于砂壤土,通气性强,保肥、保水性差。0~60 cm土壤有机质含量为1.687~5.002 mg/kg;全氮为0.072~0.316 g/kg;硝酸盐为2.325~16.846 g/kg;铵态氮为1.187~2.146 g/kg,速效磷为0.270~2.480 mg/kg,速效钾为51.9~169.1 mg/kg,并且含量均随剖面向下减少。颗粒组成大部分为粉砂粒,含量一般在65.75%~68.98%;随有机质含量升高,0.25~0.05 mm微团聚体数量呈上升趋势,二者为正相关;<0.05 mm微团聚体含量则逐渐下降,二者呈负相关。黄土高原坡地密植枣园土壤肥力总体水平很低。除了速效钾为中等级外,有机质、全氮、碱解氮、速效磷均为很低等级。

有机/无机纳米杂化发光材料的制备与性质

近年来，纳米杂化技术，尤其是溶胶-凝胶技术为发光材料的发展开辟了一个崭新的途径，但目前这些工作尚处于研究的初始阶段，还有许多问题有待克服，例如：有机染料的热稳定性差，稀土有机配合物在溶胶体系中的溶解性、分散性差，以及发光基质在杂化体系中具有浓度淬灭效应、渗出效应等。为此，我们从分子设计角度去有目的的合成一类新型Sol-gel前体，以此制备出系列有机／无机杂化发光材料，取得了一批有意义的结果。1．经γ-射线辐照原位制备有机／无机纳米杂化材料基于Sol-gel方法及γ-射线辐照技术发明了一种制备有机／无机杂化材料的新方法，并制备了两类有机／无机杂化材料，一类是有机／无机两相间无强相互作用（共价键）的杂化材料，一类是两相间有弱相互作用（氢键）的杂化材料。从材料制备上看，反应条件温和，易控制，解决了长期困扰的样品开裂问题，制备工艺简单，易操作，易于工业化。从材料的结构表征上看，经γ-射线辐照聚合的样品的聚合比较完全，紫外-可见光谱及透射电子显微镜观察结果表明杂化样品中有机相、无 机相分散性良好，杂化是在分了水平上进行的。无机网络的限制不仅提高了杂化样品中聚合物的热稳定性和相转蛮温度，还提高了杂化样品中聚合物的机械力学性能。所发明γ-射线辐照原位制备有机／无机纳米杂化材料技术可以作为相关材料制备的通用方法。2．含有机染料有机／无机纳米杂化发光材料 设计并合成了一种官能化有机染料（可作Sol-gel前体），采用所发明的γ-射线辐照技术制备了两类有机／无机杂化发光材料，一类是相间有强相互作用(共价键)有机／无机的杂化发光材料（HEMA/KH570），一类是两相间只有弱相互作用（氢键）有机／无机杂化发光材料（HEMMTEOS）。所得杂化发光样品透明性良好，在可见光范围内透光率在90％以上，在紫外光下能发射出较强的蓝色（偏紫）荧光。在所研究体系中，随着有机染料浓度的增加，样品的发光强度在逐渐增大，有机／无机组分、组成的变化对杂化材料的荧光行为：荧光发射、荧光激发、荧光寿命影响不大；同有机溶液相比，杂化基体的限制使得有机染料的荧光发射波长发生红移，纯无机基体使之红移位置更大。杂化材料的最强荧光发射波长较染料本体杂化材料的短，表明了有机染料是均匀分散在杂化基体中的。3．含稀土有机／无机纳米杂化发光材料通过所合成的含酰亚胺键的有机芳香羧酸化合物(NP)的稀土配合物的紫外-可见、荧光、磷光光谱探讨了稀土配合物中有机配体与稀土衷心离子的能量传递与能级匹配的关系。钆配合物的低温磷光光谱结果表明，所合成的酰亚胺类芳香羧酸化合物(NP)的最低三重态能级为24690cm~(-1)，与稀土铕和铽的能级差分别为7426cm~(-1)和4190cm~(-1)。荧光光谱表明所合成芳香羧酸配体与稀土离子铽的能级匹配性好，与铕离子则较差，即铽的二元配合物的相对荧光效率比铕的高，荧光寿命则几乎相同在2ms左右。在芳香羧酸化合物（NP)的三元稀土配合物中，第二配体1,10-邻菲罗啉(Phen)是能量吸收，传递的主体。同相应二元配合物相比，铕的三元配合物的相对荧光效率提高了三倍，而铽的则降低了一半，三元配合物的荧光寿命为4ms，比二元的长近一倍。所研究稀土配合物的表现的均是基于中心稀土离子的特征跃迁的特征发光，即：Eu~(3+)的5D_0→7F_j (j = 0, 1, 2, 3, 4)跃迁，Tb~(3+)的~5D_4 → ~7F_j (j = 6, 5, 4, 3)跃迁。基于小分子模型配合物的研究，设计并合成了一种新型有机芳香羧酸Sol-gel前体(TAT)，从而原位合成了含稀土有机／无机纳米杂化发光材料。荧光光谱表明所制得的有机／无机杂化膜的发光谱带较窄，色纯度较高。在含稀土有机／无机杂化膜中，随着稀土离子浓度的增加，样品相对荧光强度增大，浓度淬灭效应及发光基质的渗出效应在所研究体系中未出现。同小分子稀土配合物相比，含稀土杂化膜的荧光发射谱带窄化、不劈裂、对称性好，而且荧光寿命普遍变小，发光中心趋于单一．透射电镜结果表明所制备含稀土有机／无机杂化膜，不仅有机／无机基体杂化在分子水平上，稀土离子在杂化基体中的聚集结构也在纳米层次上，一般在50～100nm，随着稀土离子浓度的增加，这种聚集结构尺寸略有增大，但小于100nm。通过三基色原理成功地制备了发白色荧光有机／无机杂化材料，该杂化材料在紫外光的激发下可同时发出红、绿、蓝三种荧光，色坐标测试结果为：X = 0.314，Y = 0.316，该位置已接近等能量白光色坐标的理论值X = 0.33，Y = 0.33，又接近实际显示的需要，有一定的理论及实践意义。