Crystal structure and semiconductor-metal transition of the quasi-two-dimensional transition metal oxide, La2NiO4

Abstract is not available.

Pyridine-1-oxide complexes of lanthanide iodides

Pyridine-1-oxide complexes of lanthanide iodides of the formulaLn(PyO)8I3 whereLn=La, Pr, Nd, Tb, Dy, Er, and Yb have been prepared and characterised by analyses, molecular weight, conductance, infrared and proton NMR data. Proton NMR and IR data have shown the coordination of the ligand to the metal through the oxygen atom of the N–O group. NMR data have been interpreted in terms of a distorted square antiprismatic geometry in solution.

Preparation, IR and nuclear magnetic resonance studies on the rare-earth perchlorate complexes of 3-methylpyridine-1-oxide

THE COMPLEXES of pyridine-l-oxide and 2- and 4-substituted pyridine-l-oxides have been investigated previously[l]. The complexes of 3-substituted pyfidine-l-oxides, however, have received little attention. The rare-earth complexes of pyridine-Ioxide[l, 2], 4-methylpyridine- l-oxide [1] and 2,6- dimethylpyfidine-l-oxide[3,4] have been reported earlier. The present paper deals with the isolation and characterisation of 3-methylpyridine-l-oxide (3-Picoline-N-oxide, 3-PicNO) complexes with rare-earth perchlorates.

3-Picoline-N-oxide complexes of rare-earth bromides

3-Picoline-N-oxide (3-PicNO) complexes of rare-earth bromides of the formulaMBr3(3-PicNO)8–n·nH2O wheren=0 forM=La, Pr, Nd, Sm Tb or Y andn=2 forM=Ho or Yb have been prepared. Infrared and proton NMR studies indicate that the coordination of the ligand is through oxygen. Conductance data in acetonitrile suggest that two bromide ions are coordinated to the metal ion. Proton NMR studies suggest a bicapped dodecahedral arrangement of the ligands around the metal ion in solution for Pr(III), Nd(III) and Tb(III) complexes.

A model for doped-oxide-source diffusion with a chemical reaction at the silicon-silicon dioxide interface

A mathematical model for doped-oxide-source diffusion is proposed. In this model the concept of segregation of impurity at the silicon-silicon dioxide is used and also a constant of “rate limitation” is introduced through a chemical reaction at the interface.

Complexes of lanthanide iodides with 4-methylpyridine-1-oxide and 2-methylpyridine-1-oxide

Complexes of lanthanide iodides with 4-methylpyridine-1-oxide and 2-methylpyridine-1-oxide of the formulae Ln(4-MePyO)8I3.xH2O (x=0 or 2) and Ln(2-MePyO)5I3.xH2O (x=0, 1 or 3) have been prepared and characterized by analyses, conductance, infrared and proton NMR data. Infrared spectra of the complexes indicate that the coordination of the ligand to the metal ion takes place through the oxygen of the N-O group of the ligand. Proton NMR data for the paramagnetic complexes indicate that both contact and pseudocontact interactions are responsible for the isotropic shifts. Proton NMR spectra of the 2-methylpyridine-1-oxide complexes indicate a restricted rotation of the ligand about the N-O group.

4-Picoline-N-oxide complexes of rare-earth bromides

In continuation of our work on the effect of the anion on the coordination chemistry of the rare-earth metal ions, we have now extended our studies to 4-picoline-N-oxide (4-Pie NO) complexes of rare-earth bromides. By ohangi~ the method of preparation Harrison and Watsom (1) have prepared two types of Sm(IIl) complexes and three types of Eu(III) complexes of 4-pioollne-N-Oxide in the presence of perchlorate ions. We have isolated two types of pyridine-N-Oxide complexes of rare-earth bromides, also by changing the method of preparation (2). The effect of the change of the preparative method on the composition of the lanthanide complexes is exhibited in the case of other complexes also (3-6). But our attempts to prepare 4-picoline-N-Oxide of rare-earth bromides having different stoichiometries were unsucessful . The composition of the complexes is the same for all the complexes prepared. The results of the physico-chemical studies on these 4-Pic NO complexes of rare-earth bromides are discussed in the present paper.

Switching in copper oxide

This paper presents the results of an investigation conducted on the switching behavior of copper oxide. The filamentary nature of the current and also the formation of a copper channel have been observed to be associated with the process of switching. The experiments and the analysis carried out by the authors show that the formation of copper channel is due only to a secondary process and is not responsible for the actual switching of the device to the low-voltage mode. The switching, as is clear from the analysis, seems to be the result of a purely electrothermal process. The effect of the dimensions of the device on the V-I characteristics is also discussed. It has further been shown that it is possible to prevent the formation of copper channel to obtain a monoshot type of switching transition.

Some properties of indium-tin oxide-films

Thin films of indium-tin oxide have been deposited by DC diode sputtering from an indium-tin alloy target in an argon, hydrogen and oxygen atmosphere. Films with sheet resistance of 11 ohms/square and 80% light transmission have been obtained. The effect of cathode composition and gas mixture on sheet resistance and optical transmission properties of the films have been studied.

4-Nitro and 4-chloro pyridine-N-oxide complexes of lanthanide perchlorates

Adducts of lanthanide perchlorates with 4-nitro and 4-chloro pyridine-Noxides (4-NPNO and 4-CPNO respectively) have been synthesised for the first time and characterised by analysis, electrolytic conductance, infrared, proton-NMR and electronic spectral data. The complexes are of the compositions Ln2(NPNO)15 (ClO4)6 (Ln = La, Pr, Nd and Gd), Tb(NPNO), (C1O4)6), Ln2(NPNO)13 (C1O4)6) (Ln = Dy, Ho, and Yb); Ln (CPNO)8 (C104)3) (Ln = La, Pr, Nd, Tb, Dy, Ho and Yb) and Ln(CPNO), (C1O4)3) (Ln = Sm and Gd). Conductivity and IR data provide evidence for the non-coordinated nature of the perchlorate groups. IR and NMR spectra suggest coordinationvia the oxygen of the N-oxide group. Electronic spectral shapes of the Nd+3 and Ho+3 complexes are interpreted in terms of eight-and seven-coordinate environments in the case of 4-NPNO complexes and eight-coordination in the case of 4-CPNO complexes. IR data indicate bridged structure in NPNO complexes of lanthanides other than Tb.

Thermal performance of magnesium oxide wall board using numerical modelling

Fire resistance of light-gauge steel frame (LSF) walls can be enhanced by lining them with single or multiple layers of wall boards. This research is focused on the thermal per-formance of Magnesium Oxide (MgO) wall boards in comparison to the conventional gypsum plasterboards exposed to standard fire on one side. Thermal properties of MgO board and gypsum plasterboard were measured first and then used in the finite element heat transfer models of the two types of panels. The measured thermal property results show that MgO board will perform better than the gypsum plasterboards due to its higher specific heat values at elevated temperatures. However, MgO board loses 50% of its ini-tial mass at about 500 °C compared to 16% for gypsum plasterboard. The developed finite element models were validated using the fire test results of gypsum plasterboards and then used to study the thermal performance of MgO board panels. Finite element analysis re-sults show that when MgO board panels are exposed to standard fire on one side the rate of temperature rise on the ambient side is significantly reduced compared to gypsum plas-terboard. This has the potential to improve the overall thermal performance of MgO board lined LSF walls and their fire resistance levels (FRL). However, full scale fire tests are needed to confirm this. This paper presents the details of this investigation and the results.

Effect of oxygen partial pressure on the structural and optical properties of dc reactive magnetron sputtered molybdenum oxide films

Molybdenum oxide films (MoO3) were deposited on glass and crystalline silicon substrates by sputtering of molybdenum target under various oxygen partial pressures in the range 8 × 10−5–8 × 10−4 mbar and at a fixed substrate temperature of 473 K employing dc magnetron sputtering technique. The influence of oxygen partial pressure on the composition stoichiometry, chemical binding configuration, crystallographic structure and electrical and optical properties was systematically studied. X-ray photoelectron spectra of the films formed at 8 × 10−5 mbar showed the presence of Mo6+ and Mo5+ oxidation states of MoO3 and MoO3−x. The films deposited at oxygen partial pressure of 2 × 10−4 mbar showed Mo6+ oxidation state indicating the films were nearly stoichiometric. It was also confirmed by the Fourier transform infrared spectroscopic studies. X-ray diffraction studies revealed that the films formed at oxygen partial pressure of 2 × 10−4 mbar showed the presence of (0 k 0) reflections indicated the layered structure of α-phase MoO3. The electrical conductivity of the films decreased from 3.6 × 10−5 to 1.6 × 10−6 Ω−1 cm−1, the optical band gap of the films increased from 2.93 to 3.26 eV and the refractive index increased from 2.02 to 2.13 with the increase of oxygen partial pressure from 8 × 10−5 to 8 × 10−4 mbar, respectively.

Lanthanide perchlorate complexes of picolinamide-N-oxide and 4-chloro pyridine 2-aldoxime-N-oxide

Abstract is not available.

Microstructural evolution of tungsten oxide thin films

Tungsten oxide thin films are of great interest due to their promising applications in various optoelectronic thin film devices. We have investigated the microstructural evolution of tungsten oxide thin films grown by DC magnetron sputtering on silicon substrate. The structural characterization and surface morphology were carried out using X-ray diffraction and Scanning Electron Microscopy (SEM). The as deposited films were amorphous, where as, thin films annealed above 400 degrees C were crystalline. In order to explain the microstructural changes due to annealing, we have proposed a ``instability wheel'' model for the evolution of the microstructure. This model explains the transformation of mater into various geometries within them selves, followed by external perturbation.