A model for doped-oxide-source diffusion with a chemical reaction at the silicon-silicon dioxide interface
| Data(s) |
01/02/1977
|
|---|---|
| Resumo |
A mathematical model for doped-oxide-source diffusion is proposed. In this model the concept of segregation of impurity at the silicon-silicon dioxide is used and also a constant of “rate limitation” is introduced through a chemical reaction at the interface. |
| Formato |
application/pdf |
| Identificador |
http://eprints.iisc.ernet.in/24405/1/10.pdf Chakrabarti, Utpal KR (1977) A model for doped-oxide-source diffusion with a chemical reaction at the silicon-silicon dioxide interface. In: Solid-State Electronics, 20 (2). pp. 111-112. |
| Publicador |
Elsevier Science. |
| Relação |
http://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6TY5-46VKRKV-DW&_user=512776&_rdoc=1&_fmt=&_orig=search&_sort=d&_docanchor=&view=c&_acct=C000025298&_version=1&_urlVersion=0&_userid=512776&md5=7c5dadd175b7995efd00e9ac3321e639 http://eprints.iisc.ernet.in/24405/ |
| Palavras-Chave | #Electrical Engineering |
| Tipo |
Journal Article PeerReviewed |
