964 resultados para New code of civil procedure
Resumo:
Based on the conventional through-short-match (TSM) method, an improved TSM method has been proposed in this Letter. This method gives an analytical solution and has almost all the advantages of conventional TSM methods. For example, it has no phase uncertainty and no bandwidth limitation. The experimental results show that the accuracy can be significantly improved with this method. The proposed theory can be applied to the through-open-match (TOM) method. (C) 2002 Wiley Periodicals. Inc.
Resumo:
This paper is a review of research and development on semiconductor materials, which covers main scientific activities in this field. The present status acid future prospects of studies on semiconductor materials, such as silicon crystals, GaAs related III-V compound semiconductor materials and GaAs, InP and silicon based quantum well and superlattice materials, quantum wires and quantum dots materials, microcavity and photonic crystals, materials for quantum computation and wide band gap materials, are briefly discussed.
Resumo:
To increase effective load, light-weight micro-propulsion system is necessary for micro-satellites. Traditional propulsion systems including large and heavy high-pressure vessels are difficult to be scaled down to fulfill the demand of micro-satellites. In this article, a novel self-pressurizing fuel tank without high-pressure gas vessel is proposed. When some liquid propellant is consumed, pressure is compensated with CO2 released by heating NH4HCO3 powder in the fuel tank. Comparing with other types of self-pressurizing liquid fuel tank, a gas generator with special and simple structure was designed to stop or continue the NH4HCO3 decomposition reaction easily, and consumed a small amount of energy to heat the powder effectively. Performance tests showed that this new prototype is very suitable for micro-thrusters.
Resumo:
A novel silicon structure consisting of a silicon-on-defect layer (SODL), with enhanced surface Hall mobility in the surface layer on a buried defect layer (DL), has been discovered [J. Li, Nucl. Instr. and Meth. B59/60 (1991) 1053]. SODL material was formed by using proton implantation and subsequent two-step annealing. The implantation was carried out with a Varian 350D ion implanter. Based on the discovery, a standard measurement method (current-voltage curve method) was adopted to measure the true resistivity value of the DL in order to replace the spreading resistivity measurement by which the true resistivity in seriously defective silicon cannot be obtained. By adopting the current-voltage current method, the true resistivity value of the DL is measured to be 4.2 x 10(9) OMEGA cm. The SODL material was proved to be a silicon-on-insulator substrate.
Resumo:
A new-type silicon material, silicon on defect layer (SODL) was proved to have a very high quality surface microstructure which is necessary for commercially feasible high-density very large scale integrated circuits (VLSI). The structure of the SODL material was viewed by transmission electron microscopy. The SODL material was also proved to have a buried defect layer with an insulating resistivity of 5.7 x 10(10) OMEGA-cm.
Resumo:
The effect of molecular nitrogen exposure on the InP(100) surface modified by the alkali metal K overlayer is investigated by core-level photoemission spectroscopy using synchrotron radiation. The alkali metal covered surface exhibits reasonable nitrogen uptake at room temperature, and results in the formation of a P3N5 nitride complex. Flash annealing at 400 degrees C greatly enhanced the formation of this kind of nitride complex. Above 500 degrees C, the nitride complex dissolved completely. (C) 1997 American Vacuum Society.
Resumo:
Electrical, structural and reaction characteristics of In-based ohmic contacts to n-GaAs were studied. Attempts were made to form a low-band-gap interfacial phase of InGaAs to reduce the barrier height at the metal/semiconductor junction, thus yielding low-resistance, highly reliable contacts. The contacts were fabricated by e-beam sputtering Ni, NiIn and Ge targets on VPE-grown n(+)-GaAs film (approximate to 1 mu m, 2 x 10(18) cm(-3)) in ultrahigh vacuum as the structure of Ni(200 Angstrom)/NiIn(100 Angstrom)/Ge(40 Angstrom)/n(+)-GaAs/SI-GaAs, followed by rapid thermal annealing at various temperatures (500-900 degrees C). In this structure, a very thin layer of Ge was employed to play the role of heavily doping donors and diffusion limiters between In and the GaAs substrate. Indium was deposited by sputtering NiIn alloy instead of pure In in order to ensure In atoms to be distributed uniformly in the substrate; nickel was chosen to consume the excess indium and form a high-temperature alloy of Ni3In. The lowest specific contact resistivity (rho(c)) of (1.5 +/- 0.5)x 10(-6) cm(2) measured by the Transmission Line Method (TLM) was obtained after annealing at 700 degrees C for 10 s. Auger sputtering depth profile and Transmission Electron Microscopy (TEM) were used to analyze the interfacial microstructure. By correlating the interfacial microstructure to the electronical properties, InxGa1-xAs phases with a large fractional area grown epitaxially on GaAs were found to be essential for reduction of the contact resistance.