Modeling and analysis of laminate composite plates with embedded active-passive piezoelectric networks

The objective of this work is to present the finite element modeling of laminate composite plates with embedded piezoelectric patches or layers that are then connected to active-passive resonant shunt circuits, composed of resistance, inductance and voltage source. Applications to passive vibration control and active control authority enhancement are also presented and discussed. The finite element model is based on an equivalent single layer theory combined with a third-order shear deformation theory. A stress-voltage electromechanical model is considered for the piezoelectric materials fully coupled to the electrical circuits. To this end, the electrical circuit equations are also included in the variational formulation. Hence, conservation of charge and full electromechanical coupling are guaranteed. The formulation results in a coupled finite element model with mechanical (displacements) and electrical (charges at electrodes) degrees of freedom. For a Graphite-Epoxy (Carbon-Fibre Reinforced) laminate composite plate, a parametric analysis is performed to evaluate optimal locations along the plate plane (xy) and thickness (z) that maximize the effective modal electromechanical coupling coefficient. Then, the passive vibration control performance is evaluated for a network of optimally located shunted piezoelectric patches embedded in the plate, through the design of resistance and inductance values of each circuit, to reduce the vibration amplitude of the first four vibration modes. A vibration amplitude reduction of at least 10 dB for all vibration modes was observed. Then, an analysis of the control authority enhancement due to the resonant shunt circuit, when the piezoelectric patches are used as actuators, is performed. It is shown that the control authority can indeed be improved near a selected resonance even with multiple pairs of piezoelectric patches and active-passive circuits acting simultaneously. (C) 2010 Elsevier Ltd. All rights reserved.

Thermal characterization of a cross-flow heat exchanger with a new flow arrangement

The objective of the present paper is to thermally characterize a cross-flow heat exchanger featuring a new cross-flow arrangement, which may find application in contemporary refrigeration and automobile industries. The new flow arrangement is peculiar in the sense that it possesses two fluid circuits extending in the form of two tube rows, each with two tube lines. To assess the heat exchanger performance, it is compared against that for the standard two-pass counter-cross-flow arrangement. The two-part comparison is based on the thermal effectiveness and the heat exchanger efficiency for several combinations of the heat capacity rate ratio, C*, and the number of transfer units, NTU. In addition, a third comparison is made in terms of the so-called ""heat exchanger reversibility norm"" (HERN) through the influence of various parameters such as the inlet temperature ratio, T, and the heat capacity rate ratio, C*, for several fixed NTU values. The proposed new flow arrangement delivers higher thermal effectiveness and higher heat exchanger efficiency, resulting in lesser entropy generation over a wide range of C* and NTU values. These metrics are quantified with respect to the arrangement widely used in refrigeration industry due to its high effectiveness, namely, the standard two-pass counter-cross-flow heat exchanger. The new flow arrangement seems to be a promising avenue in situations where cross-flow heat exchangers for single-phase fluid have to be used in refrigeration units. (c) 2009 Elsevier Masson SAS. All rights reserved.

Multimodal passive vibration control of sandwich beams with shunted shear piezoelectric materials

This work presents a performance analysis of multimodal passive vibration control of a sandwich beam using shear piezoelectric materials, embedded in a sandwich beam core, connected to independent resistive shunt circuits. Shear piezoelectric actuators were recently shown to be more interesting for higher frequencies and stiffer structures. In particular, for shunted damping, it was shown that equivalent material loss factors of up to 31% can be achieved by optimizing the shunt circuit. In the present work, special attention is given to the design of multimodal vibration control through independent shunted shear piezoelectric sensors. In particular, a parametric analysis is performed to evaluate optimal configurations for a set of modes to be damped. Then, a methodology to evaluate the modal damping resulting from each shunted piezoelectric sensor is presented using the modal strain energy method. Results show that modal damping factors of 1%-2% can be obtained for three selected vibration modes.

Fuzzy computational control for real Chua circuit

We preserit a computational procedure to control art experimental chaotic system by applying the occasional proportional feedback (OPF) method. The method implementation uses the fuzzy theory to relate the variable correction to the necessary adjustment in the control parameter. As an application We control the chaotic attractors of the Chua circuit. We present file developed circuits and algorithms to implement this control in real time. To simplify the used procedure, we use it low resolution analog to digital converter compensated for a lowpass filter that facilitates similar applications to control other systems. (C) 2007 Elsevier Ltd. All rights reserved.

Feasibility of Electronic Tap-Changing Stabilizers for Medium Voltage Lines-Precedents and New Configurations

Thyristor-based onload tap-changing ac voltage stabilizers are cheap and robust. They have replaced most mechanical tap-changers in low voltage applications from 300 VA to 300 M. Nevertheless, this replacement hardily applies to tap-changers associated to transformers feeding medium-voltage lines (typically 69 kV primary, 34.5 kV line, 10 MVA) which need periodical maintenance of contacts and oil. The Electric Power Research Institute (EPRI) has studied the feasibility of this replacement. It detected economical problems derived from the need for series association of thyristors to manage the high voltages involved, and from the current overload developed under line fault. The paper reviews the configurations used in that field and proposes new solutions, using a compensating transformer in the main circuit and multi-winding coils in the commutating circuit, with reduced overload effect and no series association of thyristors, drastically decreasing their number and rating. The stabilizer can be installed at any point of the line and the electronic circuit can be fixed to ground. Subsequent works study and synthesize several commutating circuits in detail.

Analysis of a Three-Phase LSPMM by Numerical Method

Line-start permanent magnet motor (LSPMM) is a very attractive alternative to replace induction motors due to its very high efficiency and constant speed operation with load variations. However, designing this kind of hybrid motor is hard work and requires a good understanding of motor behavior. The calculation of load angle is an important step in motor design and can not be neglected. This paper uses the finite element method to show a simple methodology to calculate the load angle of a three-phase LSPMM combining the dynamic and steady-state simulations. The methodology is used to analyze a three-phase LSPMM.

Prediction of Crude Oil Properties and Chemical Composition by Means of Steady-State and Time-Resolved Fluorescence

Steady-state and time-resolved fluorescence measurements are reported for several crude oils and their saturates, aromatics, resins, and asphaltenes (SARA) fractions (saturates, aromatics and resins), isolated from maltene after pentane precipitation of the asphaltenes. There is a clear relationship between the American Petroleum Institute (API) grade of the crude oils and their fluorescence emission intensity and maxima. Dilution of the crude oil samples with cyclohexane results in a significant increase of emission intensity and a blue shift, which is a clear indication of the presence of energy-transfer processes between the emissive chromophores present in the crude oil. Both the fluorescence spectra and the mean fluorescence lifetimes of the three SARA fractions and their mixtures indicate that the aromatics and resins are the major contributors to the emission of crude oils. Total synchronous fluorescence scan (TSFS) spectral maps are preferable to steady-state fluorescence spectra for discriminating between the fractions, making TSFS maps a particularly interesting choice for the development of fluorescence-based methods for the characterization and classification of crude oils. More detailed studies, using a much wider range of excitation and emission wavelengths, are necessary to determine the utility of time-resolved fluorescence (TRF) data for this purpose. Preliminary models constructed using TSFS spectra from 21 crude oil samples show a very good correlation (R(2) > 0.88) between the calculated and measured values of API and the SARA fraction concentrations. The use of models based on a fast fluorescence measurement may thus be an alternative to tedious and time-consuming chemical analysis in refineries.

A Functional Verification Methodology Based on Parameter Domains for Efficient Input Stimuli Generation and Coverage Modeling

Modern Integrated Circuit (IC) design is characterized by a strong trend of Intellectual Property (IP) core integration into complex system-on-chip (SOC) architectures. These cores require thorough verification of their functionality to avoid erroneous behavior in the final device. Formal verification methods are capable of detecting any design bug. However, due to state explosion, their use remains limited to small circuits. Alternatively, simulation-based verification can explore hardware descriptions of any size, although the corresponding stimulus generation, as well as functional coverage definition, must be carefully planned to guarantee its efficacy. In general, static input space optimization methodologies have shown better efficiency and results than, for instance, Coverage Directed Verification (CDV) techniques, although they act on different facets of the monitored system and are not exclusive. This work presents a constrained-random simulation-based functional verification methodology where, on the basis of the Parameter Domains (PD) formalism, irrelevant and invalid test case scenarios are removed from the input space. To this purpose, a tool to automatically generate PD-based stimuli sources was developed. Additionally, we have developed a second tool to generate functional coverage models that fit exactly to the PD-based input space. Both the input stimuli and coverage model enhancements, resulted in a notable testbench efficiency increase, if compared to testbenches with traditional stimulation and coverage scenarios: 22% simulation time reduction when generating stimuli with our PD-based stimuli sources (still with a conventional coverage model), and 56% simulation time reduction when combining our stimuli sources with their corresponding, automatically generated, coverage models.

Harmonic Distortion of Unstrained and Strained FinFETs Operating in Saturation

The harmonic distortion (HD) exhibited by un-strained and biaxially strained fin-shaped field-effect transistors operating in saturation as single-transistor amplifiers has been investigated for devices with different channel lengths L and fin widths W(fin). The study has been performed through device characterization, 3-D device simulations, and modeling. Nonlinearity has been evaluated in terms of second- and third-order HDs (HD2 and HD3, respectively), and a discussion on its physical sources has been carried out. Also, the influence of the open-loop voltage gain AV in HD has been observed.

Cryogenic operation of FinFETs aiming at analog applications

FinFETs are recognized as promising candidates for the CMOS nanometer era. In this paper the most recent results for cryogenic operation of FinFETs will be demonstrated with special emphasis on analog applications. Threshold voltage, subthreshold slope and carrier mobility will be studied. Also some important figures of merit for analog circuit operation as for readout electronics, such as transconductance, output conductance and intrinsic voltage gain will be covered. It is demonstrated that the threshold voltage of undoped narrow FinFETs is less temperature-dependent than for a planar single-gate device with similar doping concentration. The temperature reduction improves the transconductance over drain current ratio in any operational region. On the other hand, the output conductance is degraded when the temperature is reduced. The combination of these effects shows that the intrinsic gain of a L = 90 nm FinFET is degraded by 2 dB when the temperature reduces from 300 K to 100 K. (C) 2009 Elsevier Ltd. All rights reserved.

MODELING THE UNVOICED COMPONENT IN THE CANONICAL REPRESENTATION OF SPEECH

The canonical representation of speech constitutes a perfect reconstruction (PR) analysis-synthesis system. Its parameters are the autoregressive (AR) model coefficients, the pitch period and the voiced and unvoiced components of the excitation represented as transform coefficients. Each set of parameters may be operated on independently. A time-frequency unvoiced excitation (TFUNEX) model is proposed that has high time resolution and selective frequency resolution. Improved time-frequency fit is obtained by using for antialiasing cancellation the clustering of pitch-synchronous transform tracks defined in the modulation transform domain. The TFUNEX model delivers high-quality speech while compressing the unvoiced excitation representation about 13 times over its raw transform coefficient representation for wideband speech.

Influence of the sidewall crystal orientation, HfSiO nitridation and TiN metal gate thickness on n-MuGFETs under analog operation

This work characterizes the analog performance of SOI n-MuGFETs with HfSiO gate dielectric and TiN metal gate with respect to the influence of the high-k post-nitridation. TiN thickness and device rotation. A thinner TiN metal gate is found favorable for improved analog characteristics showing an increase in intrinsic voltage gain. The devices where the high-k material is subjected to a nitridation step indicated a degradation of the Early voltage (V(EA)) values which resulted in a lower voltage gain. The 45 degrees rotated devices have a smaller V(EA) than the standard ones when a HfSiO dielectric is used. However, the higher transconductance of these devices, due to the increased mobility in the (1 0 0) sidewall orientation, compensates this V(EA) degradation of the voltage gain, keeping it nearly equal to the voltage gain values of the standard devices. (C) 2011 Elsevier Ltd. All rights reserved.

Threshold voltages of SOI MuGFETs

The multiple-gate field-effect transistor (MuGFET) is a device with a gate folded on different sides of the channel region. They are one of the most promising technological solutions to create high-performance ultra-scaled SOI CMOS. In this work, the behavior of the threshold voltage in double-gate, triple-gate and quadruple-gate SOI transistors with different channel doping concentrations is studied through three-dimensional numerical simulation. The results indicated that for double-gate transistors, one or two threshold voltages can be observed, depending on the channel doping concentration. However, in triple-gate and quadruple-gate it is possible to observe up to four threshold voltages due to the corner effect and the different doping concentration between the top and bottom of the Fin. (C) 2008 Elsevier Ltd. All rights reserved.

Improved generation lifetime model for the electrical characterization of single- and double-gate SOI nMOSFETs

This work proposes a refined technique for the extraction of the generation lifetime in single- and double-gate partially depleted SOI nMOSFETs. The model presented in this paper, based on the drain current switch-off transients, takes into account the influence of the laterally non-uniform channel doping, caused by the presence of the halo implanted region, and the amount of charge controlled by the drain and source junctions on the floating body effect when the channel length is reduced. The obtained results for single- gate (SG) devices are compared with two-dimensional numerical simulations and experimental data, extracted for devices fabricated in a 0.1 mu m SOI CMOS technology, showing excellent agreement. The improved model to determine the generation lifetime in double-gate (DG) devices beyond the considerations previously presented also consider the influence of the silicon layer thickness on the drain current transient. The extracted data through the improved model for DG devices were compared with measurements and two-dimensional numerical simulations of the SG devices also presenting a good adjustment with the channel length reduction and the same tendency with the silicon layer thickness variation.

Harmonic distortion of 2-MOS structures for MOSFET-C filters implemented with n-type unstrained and strained FINFETS

This work investigates the harmonic distortion (HD) in 2-MOS balanced structures composed of triple gate FinFETs. HD has been evaluated through the determination of the third-order harmonic distortion (HD3), since this represents the major non-linearity source in balanced structures. The 2-MOS structures with devices of different channel lengths (L) and fin widths (W(fin)) have been studied operating in the linear region as tunable resistors. The analysis was performed as a function of the gate voltage, aiming to verify the correlation between operation bias and HD3. The physical origins of the non-linearities have been investigated and are pointed out. Being a resistive circuit, the 2-MOS structure is generally projected for a targeted on-resistance, which has also been evaluated in terms of HD3. The impact of the application of biaxial strain has been studied for FinFETs of different dimensions. It has been noted that HD3 reduces with the increase of the gate bias for all the devices and this reduction is more pronounced both in narrower and in longer devices. Also, the presence of strain slightly diminishes the non-linearity at a similar bias. However, a drawback associated with the use of strain engineering consists in a significant reduction of the on-resistance with respect to unstrained devices. (C) 2011 Elsevier Ltd. All rights reserved.