Effect of farm made feeds on polyculture of shrimp (Penaeus monodon) and three brackishwater finfish species

A study was conducted to evaluate the effects of feed made from locally available ingredients on polyculture of shrimp and three brackishwater finfish species. Hatchery produced post-larvae (PL) of shrimp Penaeus monodon (0.005g) were stocked at the rate of 15,000 PLs/ha. Brackishwater finfish species Liza parsia, Mugil cephalus and Rhinomugil corsula of 0.63-1.4lg collected from local rivers were stocked at the rate 8,000, 1,000 and 2,000/ha, respectively in four treatments. Shrimp and finfishes were fed four different experimental diets composed of fish meal, mustard oil cake, rice bran, oyster shell power and vitamin premixes at the rate of 3-5% estimated crop/day for 195 days. Among four treatments, P. monodon showed comparative better growth in T4 and T3. Finfish L. parsia showed its better performance in treatment T2. Species M. cephalus and R. corsula showed insignificant production. P. monodon showed better growth with diet of fish meal and mustard oil cake@ 28.84 and 33.65%, respectively in T 3 and 19.22 and 43.27%, respectively in treatment T4.

Effect of low cost feed on the production of walking catfish, Clarias batrachus in farmer's ponds

A feeding trial was conducted for six months in farmer's ponds to assess the performance of BFRI formulated catfish feed on the growth and survival of Clarias batrachus (L.). Nine interested farmers and their ponds (size range: 10-15 dec) in the Barera union of Mymensingh Sadar were selected. The ponds were divided into 3 treatments each with 3 replications. Among the three treatment diets, two diets - traditional (F1) and BFRI formulated (F3) were prepared by using low cost agro-based locally available ingredients and the commercial diets was Saudi-Bangla Grower-1 (F2). The diets were designed as F1, F2 and F3 for traditional (20.40% protein), Commercial (31% protein) and BFRI formulated (30.44% protein) diets respectively. The fingerlings of catfish (7.3 g) were collected from local fish vendors and stocked at the rate of 100/dec. Feeding rates were adjusted by weight after fortnightly sampling of fish. Feeding rate were 10 and 8% of the total body weight respectively for 1st, 2nd month and 5% for the rest of the experimental period. The range of some selected water quality parameters were as follows: dissolved oxygen 4.0 - 7.4 mg/l, temperature 24.0°- 33.9°C, pH 6.8 - 8.00, and transparency 17.0 - 32.00 cm. Which showed suitability of the ponds for rearing fish. At the end of the experiment, significantly highest gain (p<0.05) in weight (1210.96% ±87) and lowest gain in weight (865.25% ±90) were observed in the group of fish fed on diets F3 and F1 respectively. However, no significant differences in growth (p>0.05) was observed in fish fed on commercial diet (F2) and BFRI formulated diet (F3). The FCR value ranged between 2.00 and 2.80 with the traditional diet (F1) showing significantly lower FCR. The total production of fish ranged between 1398.08 and 2145.34 kg/ha with F3 diet resulting in the highest production and net profit. A simple economic analysis showed that fish fed with BFRI formulated (F3) diet resulted in the highest net profit in farmer's pond.

A study of Rastrineobola argentea in the Ugandan lakes

Increased stocks of mukene Rastrineobola argentea and the subsequent interest in its fishery on Lake Victoria has been attributed to the poor performance of the endemic fishery as a result of introductions into this lake of foreign fish species Lates niloticus and Oreochromis niloticus. R. argentea now remains the only endemic fish species of economic importance ranking second to the Nile perch in this lake. Despite this importance, biological information on the species and knowledge of its fishery is scanty. Preliminary observations on the species in the Ugandan waters indicate that R. argentea feeds mainly on zooplankton (copepods) during daylight hours. Small quantities of aquatic insect larvae/pupae (chironomids and chaoborids) are also eaten mainly at night. These fishes breed just after the rainy seasons and the young eventually mature at between 43-44 mm standard length. Growth and population parameters show a rate of growth (K) of 0.92 with L of 64.5 mm S.L. Natural mortality (M) is given at 2.371 and total mortality (2) of 3.594. Two mesh size nets 10 and 5 mm are in use in the lake. The smaller mesh size which is more preferred by the artisanal fishermen however tends to capture many immature fishes. There is therefore need for a unified lakewide data collection on the species and its fishery in order to obtain more reliable biological information necessary proper management of this fast developing fishery.

Growth of large sized y Ba 2Cu 3O 7 single crystals using the top seeded melt growth process

Neutron scattering experiments are fundamental to the study of magnetic order and related phenomena in a range of superconducting and magnetic materials. Traditional methods of crystal growth, however, do not yield single crystals of sufficient size for practical neutron scattering measurements. In this paper, we demonstrate the growth of relatively pure, large Y Ba 2Cu 3O 7 single crystals up to 30mm in diameter using a top seeded melt growth process. The characterization of the microstructural and magnetic properties of these crystals indicates that they contain <2% of impurity phases and, hence, exhibit only weak flux pinning behaviour. © 2012 IOP Publishing Ltd.

Photoconductive hybrid films via directional self-assembly of C 60 on aligned carbon nanotubes

Hybrid nanostructured materials can exhibit different properties than their constituent components, and can enable decoupled engineering of energy conversion and transport functions. Novel means of building hybrid assemblies of crystalline C 60 and carbon nanotubes (CNTs) are presented, wherein aligned CNT films direct the crystallization and orientation of C 60 rods from solution. In these hybrid films, the C 60 rods are oriented parallel to the direction of the CNTs throughout the thickness of the film. High-resolution imaging shows that the crystals incorporate CNTs during growth, yet grazing-incidence X-ray diffraction (GIXD) shows that the crystal structure of the C 60 rods is not perturbed by the CNTs. Growth kinetics of the C 60 rods are enhanced 8-fold on CNTs compared to bare Si, emphasizing the importance of the aligned, porous morphology of the CNT films as well as the selective surface interactions between C 60 and CNTs. Finally, it is shown how hybrid C 60-CNT films can be integrated electrically and employed as UV detectors with a high photoconductive gain and a responsivity of 10 5 A W -1 at low biases (± 0.5 V). The finding that CNTs can induce rapid, directional crystallization of molecules from solution may have broader implications to the science and applications of crystal growth, such as for inorganic nanocrystals, proteins, and synthetic polymers. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Mitochondrial 16S rRNA sequence variations and phylogeny of the Chinese sisorid catfishes

Partial sequences of mitochondrial 16S rRNA gene were obtained by PCR amplification for comparisons among nine species of glyptosternoid fishes and six species of non-glyptosternoids representing 10 sisorid genera. There are compositional biases in the A-rich impaired regions and G-rich paired regions. A-G transitions are primarily responsible for the Ts/Tv bias in impaired regions. The overall substitution rate in impaired regions is almost two times higher than that in the paired regions. Saturation plots at comparable levels of sequence divergence demonstrate no saturation effects. Phylogenetic analyses using both maximum likelihood and Bayesian methods support the monophyly of Sisoridae. Chinese sisorid catfishes are composed of two major lineages, one represented by (Gagata (Bagarius, Glyptothorax)) and the other by "glyptosternoids + Pseudecheneis". The glyptosternoids may not be a monophyletic group. A previous hypothesis referring to Pseudecheneis as the sister group of monophyletic glyptosternoids, based on morphological evidence, is not supported by the molecular data. Pseudecheneis is shown to be a sister taxon of Glaridoglanis. Pareuchiloglanis might be paraphyletic with Pseudexostoma and Euchiloglanis. Our results also support the hypothesis that Pareuchiloglanis anteanalis might be considered as the synonyms of Pareuchiloglanis sinensis, and genus Euchiloglanis might have only one valid species, Euchiloglanis davidi.

The influence of low-temperature Ge seed layer on growth of high-quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition

High-quality Ge epilayer on Si(1 0 0) substrate with an inserted low-temperature Ge seed layer and a thin Si0.77Ge0.23 layer was grown by ultrahigh vacuum chemical vapor deposition. The epitaxial Ge layer with surface root-mean-square roughness of 0.7 nm and threading dislocation density of 5 x 10(5) cm(-2) was obtained. The influence of low temperature Ge seed layer on the quality of Ge epilayer was investigated. We demonstrated that the relatively higher temperature (350 degrees C) for the growth of Ge seed layer significantly improved the crystal quality and the Hall hole mobility of the Ge epilayer. (C) 2008 Elsevier B.V. All rights reserved.

Investigation of native defects and property of bulk ZnO single crystal grown by a closed chemical vapor transport method

Hall effect, Raman scattering, photoluminescence spectroscopy (PL), optical absorption (OA), mass spectroscopy, and X-ray diffraction have been used to study bulk ZnO single crystal grown by a closed chemical vapor transport method. The results indicate that shallow donor impurities (Ga and Al) are the dominant native defects responsible for n-type conduction of the ZnO single crystal. PL and OA results suggest that the as-grown and annealed ZnO samples with poor lattice perfection exhibit strong deep level green photoluminescence and weak ultraviolet luminescence. The deep level defect in as-grown ZnO is identified to be oxygen vacancy. After high-temperature annealing, the deep level photoluminescence is suppressed in ZnO crystal with good lattice perfection. In contrast, the photoluminescence is nearly unchanged or even enhanced in ZnO crystal with grain boundary or mosaic structure. This result indicates that a trapping effect of the defect exists at the grain boundary in ZnO single crystal. (C) 2007 Elsevier B.V. All rights reserved.

Growth of (10(1)over-bar(3)over-bar) semipolar GaN on m-plane sapphire by hydride vapor phase epitaxy

The crystalline, surface, and optical properties of the (10 (1) over bar(3) over bar) semipolar GaN directly grown on m-plane sapphire substrates by hydride vapor phase epitaxy (HVPE) were investigated. It was found that the increase of V/III ratio led to high quality (10 (1) over bar(3) over bar) oriented GaN epilayers with a morphology that may have been produced by step-flow growth and with minor evidence of anisotropic crystalline structure. After etching in the mixed acids, the inclined pyramids dominated the GaN surface with a density of 2 X 10(5) cm(-2), revealing the N-polarity characteristic. In the low-temperature PL spectra, weak BSF-related emission at 3.44eV could be observed as a shoulder of donor-bound exciton lines for the epilayer at high V/III ratio, which was indicative of obvious reduction of BSFs density. In comparison with other defect related emissions, a different quenching behavior was found for the 3.29 eV emission, characterized by the temperature-dependent PL measurement. (C) 2009 Elsevier B.V. All rights reserved.

Growth behavior of AlInGaN films

The structural and surface properties of AlInGaN quaternary films grown at different temperatures on GaN templates by metalorganic chemical vapor deposition are investigated. Formation of two quaternary layers is confirmed and the difference between them is pronounced when the growth temperature is increased. The surface is featured with V-shaped pits and cracks, whose characteristics are further found to be strongly dependent on the growth temperature of AlInGaN layers. The two-layer structure is interpreted by taking into account of the strain status in AlInGaN layers. (C) 2008 Elsevier B.V. All rights reserved.

Growth of c-oriented ZnO films on (001) SMO3 substrates by MOCVD

The growth direction of ZnO thin films grown by metal-organic chemical vapor deposition (MOCVD) is modulated by pretreatment of (001) SMO3 (STO) substrates. ZnO films show a-oriented smooth surface with epitaxial relationship of < 001 > ZnO//< 110 > STO on as-received SfO, and c-axis columnar growth with < 010 > ZnO//< 110 > STO on etched STO, respectively. The orientation alteration of ZnO films is supposed to be caused by the change of STO surface polarity. In addition, the c-ZnO films exhibit an enhanced photoluminescence (PL) intensity due to the improved crystal quality, while the blueshift of PL peak is attributed to the smaller tensile strain. These results show that high quality c-ZnO, which is essential for electronic and optoelectronic device applications, can be grown on (001) SfO by MOCVD. (C) 2008 Elsevier B.V. All rights reserved.

Optimizing the GaAs capping layer growth of 1.3 mu m InAs/GaAs quantum dots by a combined two-temperature and annealing process at low temperatures

We report on optimizing the GaAs capping layer growth of 1.3 mu m InAs quantum dots (QDs) by a combined two-temperature and annealing process at low temperatures using metalorganic chemical vapor deposition. The initial part (tnm) of the capping layer is deposited at a low temperature of 500 degrees C, which is the same for the growth of both the QDs and a 5-nm-thick In0.15Ga0.85As strain-reducing capping layer on the QDs, while the remaining part is grown at a higher temperature of 560 degrees C after a rapid temperature rise and subsequent annealing period at this temperature. The capping layer is deposited at the low temperatures (<= 560 degrees C) to avoid postgrowth annealing effect that can blueshift the emission wavelength of the QDs. We demonstrate the existence of an optimum t (=5 nm) and a critical annealing time (>= 450s) during the capping, resulting in significantly enhanced photoluminescence from the QDs. This significant enhancement in photoluminescence is attributed to a dramatic reduction of defects due to the optimized capping growth. The technique reported here has important implications for realizing stacked 1.3 mu m InAs/GaAs QD lasers. (C) 2008 Elsevier B.V. All rights reserved.

Characterization of InAs quantum dots on lattice-matched InAlGaAs/InP superlattice structures

Self-assembled InAs quantum dots (QDs) in an InAlGaAs matrix, lattice-matched to InP substrate, have been grown by molecular beam epitaxy (MBE). Transmission electron microscopy (TEM), double-crystal X-ray diffraction (DCXRD) and photoluminescence (PL) are used to study their structural and optical properties. In InAs/InAlGaAs/ InP system, we propose that when the thickness of InAs layer deposited is small, the random strain distribution of the matrix layer results in the formation of tadpole-shaped QDs with tails towards random directions, while the QDs begin to turn into dome-shaped and then coalesce to form islands with larger size and lower density to release the increasing misfit strain with the continuous deposition of InAs. XRD rocking curves showing the reduced strain with increasing thickness of InAs layer may also support our notion. The results of PL measurements are in well agreement with that of TEM images. (C) 2004 Elsevier B.V. All rights reserved.

Growth of crack-free AlGaN film on thin AlN interlayer by MOCVD

We have studied the effect of low-temperature-deposited (LT) and high-temperature-deposited (FIT) AlN interlayer with various thickness on AlGaN film grown on GaN using c-plane sapphire as substrate. All the Al0.25Ga0.75N films thicker than 1 mum with LT-AlN interlayer or with HT-AlN interlayer were free of cracks, however, their surfaces were different: the Al0.25Ga0.75N films with LT-AlN interlayer showed smooth surface, while those with HT-AlN interlayer exhibit rough surface morphology. The results of X-ray double crystal diffraction and Rutherford backscattering showed that all of the AlGaN films were under compressive strain in the parallel direction. The compressive strain resulted from the effect of interlayer-induced stress relieving and the thermal mismatch for the samples with LT-AlN interlayer, and it was due to the thermal mismatch between AlGaN and the underlying layers for those with HT-AlN interlayer. (C) 2004 Elsevier B.V. All rights reserved.