Growth behavior of AlInGaN films
| Data(s) |
2009
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|---|---|
| Resumo |
The structural and surface properties of AlInGaN quaternary films grown at different temperatures on GaN templates by metalorganic chemical vapor deposition are investigated. Formation of two quaternary layers is confirmed and the difference between them is pronounced when the growth temperature is increased. The surface is featured with V-shaped pits and cracks, whose characteristics are further found to be strongly dependent on the growth temperature of AlInGaN layers. The two-layer structure is interpreted by taking into account of the strain status in AlInGaN layers. (C) 2008 Elsevier B.V. All rights reserved. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Shang JZ ; Zhang BP ; Mao MH ; Cai LE ; Zhang JY ; Fang ZL ; Liu BL ; Yu JZ ; Wang QM ; Kusakabe K ; Ohkawa K .Growth behavior of AlInGaN films ,JOURNAL OF CRYSTAL GROWTH,2009 ,311(3):474-477 |
| Palavras-Chave | #半导体材料 #Scanning electron microscope #Strain #X-ray diffraction #AlInGaN |
| Tipo |
期刊论文 |
