Synthesis of high quality n-type CdS nanobelts and their applications in nanodevices

High quality n-type CdS nanobelts (NBs) were synthesized via an in situ indium doping chemical vapor deposition method and fabricated into field effect transistors (FETs). The electron concentrations and mobilities of these CdS NBs are around (1.0x10(16)-3.0x10(17))/cm(3) and 100-350 cm(2)/V s, respectively. An on-off ratio greater than 10(8) and a subthreshold swing as small as 65 mV/decade are obtained at room temperature, which give the best performance of CdS nanowire/nanobelt FETs reported so far. n-type CdS NB/p(+)-Si heterojunction light emitting diodes were fabricated. Their electroluminescence spectra are dominated by an intense sharp band-edge emission and free from deep-level defect emissions. (c) 2006 American Institute of Physics.

Effect of lightly Si doping on the minority carrier diffusion length in n-type GaN films

We investigate the effects of lightly Si doping on the minority carrier diffusion length in n-type GaN films by analyzing photovoltaic spectra and positron annihilation measurements. We find that the minority carrier diffusion length in undoped n-type GaN is much larger than in lightly Si-doped GaN. Positron annihilation analysis demonstrates that the concentration of Ga vacancies is much higher in lightly Si-doped GaN and suggests that the Ga vacancies instead of dislocations are responsible for the smaller minority carrier diffusion length in the investigated Si-doped GaN samples due to the effects of deep level defects. (c) 2006 American Institute of Physics.

Aluminium doping induced enhancement of p-d coupling in ZnO

Valence-band type Auger lines in Al doped and undoped ZnO were comparatively studied with the corresponding core level x-ray photoelectron spectrography (XPS) spectra as references. Then the shift trend of energy levels in the valence band was that p and p-s-d states move upwards but e and p-d states downwards with increasing Al concentration. The decreased energy of the Zn 3d state is larger than the increased energy of the 0 2p state, indicating the lowering of total energy. This may indicate that Al doping could induce the enhancement of p-d coupling in ZnO, which originates from stronger Al-O hybridization. The shifts of these states and the mechanism were confirmed by valence band XPS spectra and 0 K-edge x-ray absorption spectrography (XAS) spectra. Finally, some previously reported phenomena are explained based on the Al doping induced enhancement of p-d coupling.

Electronic properties of sulfur passivated undoped-n(+) type GaAs surface studied by photoreflectance

Photoreflectance (PR) has been used to study surface electronic properties (electric field, Fermi level pinning, and density of surface states) of undoped-n(+) (UN+) GaAs treated in the solution of ammonium sulfide in isopropanol. Complex Fourier transformation (CFT) of PR spectra from passivated surface shows that the sulfur overlay on GaAs surface makes no contribution to Franz-Keldysh oscillations (FKOs). The barrier height measured by PR is derived from surface states directly, rather than the total barrier height, which includes the potentials derived from Ga-S and As-S dipole layers. Comparing with native oxidated surface, the passivation leads to 80 meV movement of surface Fermi level towards the conduction band minimum, and reduction by more than one order in density of surface states. (C) 2003 Elsevier Science B.V. All rights reserved.

Study on variable capacitance diode of (p)nc-Si : H/(n)c-Si heterojunction

Hydrogenated nanocrystalline silicon (nc-Si:H) layers of boron-doped increasing step by step was deposited on n-type crystalline silicon substrate using Plasma Enhanced Chemical Vapor Deposition (PECVD) system. After evaporating Ohm contact electrode on the side of substrate and on the side of nc-Si:H film, a structure of electrode/ (p)nc-Si:H/(n)c-Si/electrode was obtained. It is confirmed by electrical measurement such as I-V curve, C-V curve and DLTS that this is a variable capacitance diode. (C) 2003 Elsevier Science Ltd. All rights reserved.

Effect of InAs quantum dots on the Fermi level pinning of undoped-n(+) type GaAs surface studied by contactless electroreflectance

Self-assembled InAs quantum dots (QDs) have been fabricated by depositing 1.6, 1.8, 2.0 and 2.5 monolayer (ML) InAs on surfaces of the undoped-n(+) (UN+) type GaAs structure. Room temperature contactless electroreflectance (CER) was employed to study the built-in electric field and the surface Fermi level pinning of these QD-covered UN+ GaAs samples. The CER results show that 1.6 ML InAs QDs on GaAs do not modify the Fermi level, whereas for samples with more than 1.6 ML InAs coverage, the surface Fermi level is moved to the valence band maximum of GaAs by about 70 meV (which is independent of the InAs deposition thickness) compared to bare GaAs. It is concluded that the modification of InAs coverage on the Fermi level on the GaAs surface is due to the QDs, rather than to the wetting layer. (C) 2003 American Institute of Physics.

Observation of quantum-confined Stark shifts in SiGe/Si type-I multiple quantum wells

Quantum-confined Stark shifts in SiGe/Si type-I multiple quantum wells are suggested by the bias dependence of the photocurrent spectra of p-i-n photodiodes. Both Stark redshift and blueshift have been observed for the same sample in the different ranges of electric fields applied to the quantum wells. The turnaround point corresponds to a certain electric field (named "critical" field). This phenomenon was generally predicted by Austin in 1985 [Phys. Rev. B 31, 5569 (1985)] and calculated in detail for SiGe quantum structure by Kim recently [Thin Solid Films 321, 215 (1998)]. The critical electric field obtained from the photocurrent spectra is in reasonable agreement with the theoretical prediction. (C) 2000 American Institute of Physics. [S0021-8979(00)03711-7].

The design and operation of a new clapboard-type internal circulating fluidized-bed gasifier

The design and operation of a new clapboard-type internal circulating fluidized-bed gasifier is proposed in this article. By arranging the clapboard in the bed, the gasifier is thus divided into two regions, which are characterized by different fluidization velocities. The bed structure is designed so that it can guide the circulating flow passing through the two regions, and therefore the feedstock particles entrained in the flow experience longer residence time. The experimental results based on the present new design, operating in the temperature range of 790 degrees C-850 degrees C, indicate that the gas yield is from 1.6-1.9 Nm(3)/kg feedstock, the gas enthalpies are 5,345 kJ/Nm(3) for wood chip and 4,875 kJ/m(3) for rice husk, and a gasification efficiency up to 75% can be obtained.

Characterization of recombination centres in n-type Hg1-xCdxTe

The defect levels in Hg1-xCdxTe P+N junction photodiodes (x = 0.4) were first studied using deep-level transient spectroscopy. Two electron traps, E(1)(0.06) and E(2)(0.15), and two hole traps, H-1(0.075) and H-2(0.29), were obtained, Characteristic parameters-the minority lifetime of the devices and the dynamic resistance-area product at zero bias-are estimated according to these levels. Results show that these two minority levels may be important in controlling lifetime. We have studied the recombination mechanism of the hole trap H-2(0.29) further. It has a large activation energy and satisfies the formula sigma(T) = sigma(x) exp(-E(F)/E(T)). This reflects the fact that its recombination mechanism is multiphonon nonradiative recombination, which is rarely reported in narrow-bandgap materials.

P-选择素CR结构域功能的模拟预测

<正>选择素(selectin)与其配体间相互作用介导的细胞粘附在炎症级联反应、肿瘤转移和淋巴细胞归巢等病理、生理过程中起重要作用。其结构组成从远离细胞表面的N-末端到胞内C-末端,依次为:钙型凝集素功能区(Calcium-type lectin domain,Lec),类上皮生长因子功能区(Epidermal Growth Factor-like module,EGF),具有粘附补体蛋白作用的多个重复序列(Consensus Repeats,CRs),跨膜区(Transmembrane,TM)和胞内区

P-选择素Lectin结构域变构的模拟预测

<正>粘附分子选择素(selectin)家族成员与其配体间相互作用介导的细胞粘附在炎症级联反应、肿瘤转移和淋巴细胞归巢等病理、生理过程中起重要作用(Bevilacqua and Nelson,1993)。其结构组成从远离细胞表面的N-末端到胞内C-末端,依次为:钙型凝集素功能区(Calcium-type lectin domain,Lec),类上皮生长因子功

Adenovirus-mediated wild-type P53 Transfer radiosensitizes H1299 cells to subclinical-dose carbon-ion irradiation through the restoration of p53 function

To determine whether adenovirus-mediated wild-type p53 transfer after radiotherapy could radiosensitize non-small-cell lung cancer (NSCLC) cells to subclinical-dose carbon-ion beam (C-beam), H1299 cells were exposed to a C-beam or -ray and then infected with 5 MOI of AdCMV-p53 or GFP (C-beam or -ray with p53 or GFP).Cell cycle was detected by flow cytometric analysis. The apoptosis was examined by a fluorescent microscope with DAPI staining. DNA fragmentation was monitored by the TUNEL assay. P53 mRNA was detected by reverse-transcriptase polymerase chain reaction. The expression of p53, MDM2, and p21 was monitored by Western blot. Survival fractions were determined by colony-forming assay. The percentages of G1-phase cells in C-beam with p53 increased by 8.2%–16.0%, 5.2%–7.0%, and 5.8%–18.9%, respectively, compared with C-beam only, -ray with p53, or p53 only. The accumulation of G2-phase cells in C-beam with p53 increased by 5.7%–8.9% and 8.8%–14.8%, compared with those in -ray with p53 or p53 only, respectively. The percentage of apoptosis for C-beam with p53 increased by 7.4%–19.1%, 5.8%–11.7%, and 5.2%–19.2%, respectively, compared with C-beam only, -ray with p53, or p53 only. The level of p53 mRNA in C-beam with p53 was significantly higher than that in p53 only. The expression level of p53 and p21 in C-beam with p53 was significantly higher than that in both C-beam with GFP and p53 only. The survival fractions for C-beam with p53 were significantly less than those for the other groups (p 0.05). The data suggested that AdCMV-p53 transfer could more efficiently radiosensitize H1299 cells to subclinical-dose C-beam irradiation through the restoration of p53 function.

Effects of soil type on leaching and runoff transport of rare earth elements and phosphorous in laboratory experiments

Through leaching experiments and simulated rainfall experiments, characteristics of vertical leaching of exogenous rare earth elements (REEs) and phosphorus (P) and their losses with surface runoff during simulated rainfall in different types of soils (terra nera soil, cinnamon soil, red soil, loess soil, and purple soil) were investigated. Results of the leaching experiments showed that vertical transports of REEs and P were relatively low, with transport depths less than 6 cm. The vertical leaching rates of REEs and P in the different soils followed the order of purple soil > terra nera soil > red soil > cinnamon soil > loess soil. Results of the simulated rainfall experiments (83 mm h(-1)) revealed that more than 92% of REEs and P transported with soil particles in runoff. The loss rates of REEs and P in surface runoff in the different soil types were in the order of loess soil > terra nera soil > cinnamon soil > red soil > purple soil. The total amounts of losses of REEs and P in runoff were significantly correlated.

Surface enhanced Raman scattering of p-aminothiophenol self-assembled monolayers in sandwich structure fabricated on glass

A sandwich structure consisting of Ag nanoparticles (NPs), p-aminothiophenol (p-ATP) self-assembled monolayers (SAMs), and Ag NPs was fabricated on glass and characterized by surface enhanced Raman scattering (SERS). The SERS spectrum of a p-ATP SAM in such sandwich structure shows that the electromagnetic enhancement is greater than that on Ag NPs assembled on glass. The obtained enhancement factors (EF) on solely one sandwich structure were as large as 6.0 +/- 0.62x10(4) and 1.2 +/- 0.62x10(7) for the 7a and 3b(b(2)) vibration modes, respectively. The large enhancement effect of p-ATP SAMs is likely a result of plasmon coupling between the two layers of Ag NP (localized surface plasmon) resonance, creating a large localized electromagnetic field at their interface, where p-ATP resides. Moreover, the fact that large EF values (similar to 1.9 +/- 0.7x10(4) and 9.4 +/- 0.7x10(6) for the 7a- and b(2)-type vibration modes, respectively) were also obtained on a single sandwich structure of Au NPs/p-ATP SAMs/Ag NPs in the visible demonstrates that the electromagnetic coupling does not exist only between Ag NPs but also between Au and Ag NPs.

The direct synthesis of wholly aromatic poly(p-phenylene)s bearing sulfobenzoyl side groups as proton exchange membranes

Sulfonated poly(p-phenylene)s (SPPs) containing sulfonic acid groups in their side chains had been directly synthesized by Ni(0) catalytic coupling of sodium 3-(2,5-dichlorobenzoyl)benzenesulfonate and 2,5-dichlorobenzophenone. The synthesized copolymers possessed high molecular weights revealed by their high viscosity, and the formation of tough and flexible membranes by casting from DMAc solution. The copolymers exhibited excellent oxidative stability and mechanical properties due to their fully aromatic structure extending through the backbone and pendent groups. Transmission electron microscopic (TEM) analysis revealed that these side-chain type SPP membranes have a microphase-separated structure composed of hydrophilic side-chain domains and hydrophobic polyphenylene main chain domains. The proton conductivities of copolymer membranes increased with the increase of IEC and temperature, reaching values above 3.4 x 10(-1) S/cm at 120 degrees C, which are almost 2-3 times higher than that of Nafion 117 at the same measurement conditions. Consequently, these materials proved to be promising as proton exchange membranes.