Anti-HIV-1 Activity of Lignans from the Fruits of Schisandra rubriflora

This study investigated the 70% aqueous acetone extract of the fruits of Schisandra rubriflora which led to the isolation of eight lignans, including a new isolate, rubrisandrin C (1), and seven known lignans (2-8). The structure of 1 was established by extensive 1D and 2D NMR spectroscopy and its absolute stereochemistry was determined by CD spectrum. Compounds 1-5 and 7-8 were evaluated for their anti-HIV-1 activity that showed inhibitory activity on HIV-1(IIIB) induced syncytium formation with EC50 values in the range of 2.26 similar to 20.4 mu g/mL. Compounds 1 and 7 exerted their obvious protection of HIV-1(IIIB) inducted MT-4 host cells lytic effects with a selectivity index of 15.4 and 24.6, respectively.

Explorative study on the expression of neuregulin-1 gene in peripheral blood of schizophrenia

Neuregulin-1 (Nrg-1)(1) gene has been considered as a schizophrenia susceptibility gene. In order to observe the association of Nrg-1 gene with schizophrenia, the study was designed to investigate the effect of anti-psychotic treatment on the Nrg-1 mRNA e

HIV-1感染对T和B细胞核内UNG2 mRNA表达的影响

目的:探讨HIV-1感染是否影响细胞中UNG2的表达.方法:采用四步法SYBR green Ⅰ实时定量RT-PCR,对HIV-1感染者的T和B淋巴细胞,以及HIV-1感染的C8166细胞核内UNG2 mRNA的表达进行测定.结果:UNG2 mRNA的表达在HIV-1感染者的T细胞和HIV-1感染的C8166细胞中被明显上调,分别是对照的8.76倍和8.14倍,而在HIV-1感染者的B细胞中却没有被上调.结论:HIV-1感染导致的UNG2表达上调,可能通过减少TCR的多样性削弱Th的功能,另一方面可能有利于病毒对UNG2的包装.

A 1,000 Frames/s Programmable Vision Chip with Variable Resolution and Row-Pixel-Mixed Parallel Image Processors

A programmable vision chip with variable resolution and row-pixel-mixed parallel image processors is presented. The chip consists of a CMOS sensor array, with row-parallel 6-bit Algorithmic ADCs, row-parallel gray-scale image processors, pixel-parallel SIMD Processing Element (PE) array, and instruction controller. The resolution of the image in the chip is variable: high resolution for a focused area and low resolution for general view. It implements gray-scale and binary mathematical morphology algorithms in series to carry out low-level and mid-level image processing and sends out features of the image for various applications. It can perform image processing at over 1,000 frames/s (fps). A prototype chip with 64 x 64 pixels resolution and 6-bit gray-scale image is fabricated in 0.18 mu m Standard CMOS process. The area size of chip is 1.5 mm x 3.5 mm. Each pixel size is 9.5 mu m x 9.5 mu m and each processing element size is 23 mu m x 29 mu m. The experiment results demonstrate that the chip can perform low-level and mid-level image processing and it can be applied in the real-time vision applications, such as high speed target tracking.

Fabrication of 1.55-mu m Si-based resonant cavity enhanced photodetectors using sol-gel bonding

In this work, a novel bonding method using silicate gel as the bonding medium was developed to fabricate an InGaAs narrow-band response resonant cavity enhanced photodetector on a silicon substrate. The bonding was performed at a low temperature of 350 degreesC without any special treatment on bonding surfaces and a Si-based narrow-band response InGaAs photodetector was successfully fabricated, with a quantum efficiency of 34.4% at the resonance wavelength of 1.54 mum, and a full-width at half-maximum of about 27 nm. The photodetector has a linear photoresponse up to 4-mW optical power under 1.5 V or higher reverse bias. The low temperature wafer bonding process demonstrates a great potential in device fabrication.

GaAs-based room-temperature continuous-wave 1.59 mu m GaInNAsSb single-quantum-well laser diode grown by molecular-beam epitaxy

Starting from the growth of high-quality 1.3 mu m GaInNAs/GaAs quantum well (QW), the QW emission wavelength has been extended up to 1.55 mu m by a combination of lowering growth rate, using GaNAs barriers and incorporating some amount of Sb. The photoluminescence properties of 1.5 mu m range GaInNAsSb/GaNAs QWs are quite comparable to the 1.3 mu m QWs, revealing positive effect of Sb on improving the optical quality of the QWs. A 1.59 mu m lasing of a GaInNAsSb/GaNAs single-QW laser diode is obtained under continuous current injection at room temperature. The threshold current density is 2.6 kA/cm(2) with as-cleaved facet mirrors. (c) 2005 American Institute of Physics.

Metamorphic growth of 1.25-1.29 mu m InGaAs quantum well lasers on GaAs by molecular beam epitaxy

We demonstrate 1.25-1.29 mu m metamorphic laser diodes grown on GaAs by molecular beam epitaxy (MBE) using an alloy-graded buffer layer (GBL). Use of Be in the GBL is effective to reduce surface/interface roughness and improves optical quality. The RMS surface roughness of the optimized metamorphic laser is only two atomic monolayers for 1 x 1 mu m(2). Cross-sectional transmission electron microscopy (TEM) images confirm that most dislocations are blocked in the GBL. Ridge waveguide lasers with 4 mu m wide ridge were fabricated and characterized. The average threshold current under the pulsed excitation is in 170-200 mA for a cavity length of 0.9-1.5 mm. This value can be further reduced to about 100 mA by high-reflectivity coating. Lasers can work in an ambient temperature up to at least 50 degrees C. (c) 2006 Elsevier B.V. All rights reserved.

Influence of growth parameters of frequency-radio plasma nitrogen source on extending emission wavelengths from 1.31 mu m to 1.55 mu m GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy

High (42.5%) indium content GaInNAs/GaAs quantum wells with room temperature emission wavelength from 1.3 mu m to 1.5 mu m range were successfully grown by Radio Frequency Plasma Nitrogen source assisted Molecular Beam Epitaxy. The growth parameters of plasma power and N-2 How rate were optimized systematically to improve the material quality. Photoluminescence and transmission electron microscopy measurements showed that the optical and crystal quality of the 1.54 mu m GaInNAs/GaAs QWs was kept as comparable as that in 1.31 mu m.

Design and Operation of A 5.5 MWe Biomass Integrated Gasification Combined Cycle Demonstration Plant

The design and operation of a 5.5 MWe biomass integrated gasification combined cycle (IGCC) demonstration plant, which is located in Xinghua, Jiangsu Province of China, are introduced. It is the largest complete biomass gasification power plant that uses rice husk and other agricultural wastes as fuel in Asia. It mainly consists of a 20 MWt atmospheric circulating fluidized-bed gasifier, a gas-purifying system, 10 sets of 450 kW(e) gas engines, a waste heat boiler, a 1.5 MWe steam turbine, a wastewater treatment system, etc. The demonstration plant has been operating since the end of 2005, and its overall efficiency reaches 26-28%. Its capital cost is less than 1200 USD/kW, and its running cost is about 0.079 USD/kWh based on the biomass price of 35.7 USD/ton. There is a 20% increment on capital cost and 35% decrease on the fuel consumption compared to that of a 1 MW system without a combined cycle. Because only part of the project has been performed, many of the tests still remain and, accordingly, must be reported at a later opportunity.

5-氨基乙酰丙酸对日光温室番茄生长发育和产量品质的影响

为外源5-氨基乙酰丙酸(ALA)在日光温室蔬菜上的应用提供科学依据。【方法】研究了不同浓度ALA处理对日光温室番茄生产的影响。【结果】ALA以及ALA+N叶面施用均明显提高了番茄植株株高、叶绿素相对含量和果实产量,并改善了番茄果实品质;与对照相比,外源ALA各处理植株株高、叶绿素相对含量和单株生物产量均有明显提高,其中D处理(ALA1号肥料第1次2 kg/hm2,第2~4次1 kg/hm2)效果最佳,植株株高、叶绿素相对含量及单株生物产量分别提高27.18%,17.75%和13.93%;外源ALA对番茄果实产量和品质也有明显的提高和改善作用,其中处理B(ALA1号肥料第1次0.5 kg/hm2,第2~4次0.3 kg/hm2)对果实产量效果最明显,处理E(ALA3号肥料第1次2.5 kg/hm2,第2~4次1.5 kg/hm2)对果实品质效果最佳。【结论】处理E(ALA3号肥料第1次2.5 kg/hm2,第2~4次1.5 kg/hm2)既有利于番茄生长发育,又能增加产量并改善品质,为最佳的ALA施用量及方法。

钼体系催化合成1,2－聚丁二烯的研究

本工作通过较系统地研究Ziegler-Natta型钼催化体系对丁二烯聚合的催化作用，发现一类活性很高的钼催化剂。此类催化剂以无毒，资源丰富的加氢汽油为溶剂，活性已接近工业化的Ni、Co、Ti等体系。同时，本工作又找到了大幅度调节聚合物分子量和链结构的方法，发现了具有活性聚合特点的钼催化体系，初步考察了钼体系催化丁二烯聚合的动力学行为；并利用红外光谱，~(13)C-NRM、X-射线衍射和热分析等方法研究了所得聚合物的链结构和聚集态结构，对聚合物的基本性能也进行了初步考察，发现所得聚合物的一些基本性能超过天然橡胶。此类高活性钼催化剂由MoCl_4OR和(i-Bu)_2AlOAr组成，R为C_(8-18)烷基，Ar为芳基。本催化体系在70 ℃下催化丁二烯聚合时，催化剂用量为Mo/J摩尔比等于4 * 10~(-5)时，转化率可达78％。本体系聚合物分子量可用烯丙基卤等调节，其中烯丙基碘的效果最好。在Mo/J = 8 * 10~(-5)时，烯丙基碘/Mo摩尔比为0.1时即可使聚合物分子量下降约50万；烯丙基碘/Mo摩尔比为10时，聚合物重均分子量即小于20万（不加烯丙基碘为270万）。本体系聚合物分子量分布很窄，聚合温度为30 - 70 ℃时，_W/_n为1.5-2.0；_W/_n与聚合温度呈直线关系，利用外推法估计和动力学考察，本体系在－18 ℃左右有可能引发活性聚合。本体系聚丁二烯含有85％以上1,2－链节，其1，2-链节含量也可以用某些极性添加剂来调节。利用烯丙基碘做调节剂，可制得1,2－链节含量高达98％的聚丁二烯。烯丙基碘还可以调节聚合物链节的立体构型和序列分布；随着烯丙基碘用量的增加，间同1,2－链节增多，全同和无规1,2－链节减少，序列分布的有规性增加，链结构趋于规整。根据动力学初步研究结果，本体系催化丁二烯聚合的速度对单体浓度呈一级关系，表现活化能为17.07千卡／摩卡，催化剂利用率为4％，链增长速度常数为: k_(p30℃) = 40 (升／摩尔·分，下同), k_(p40℃) = 97, k_(p50℃) = 267, k_(p60℃) = 508, k_(p70℃) = 12077。本体系聚合物在烯丙基碘/Mo摩尔比小于2时，无论静态或拉伸下均为无定型；烯丙基碘/Mo摩尔比大于2而小于8时，静态下为无定型，而拉伸时产生结晶，与天然橡胶类似；烯丙基碘／Mo摩尔比大于8时，静态下亦有一定程度的结果。

1、喜树碱类衍生物抗HIV构效关系与作用机制研究2、HIV/AIDS患者疱疹病毒感染状况及性病患者的HIV感染状况分析

1、喜树碱类衍生物抗HIV构效关系与作用机制研究 喜树碱为传统的抗肿瘤药物。本研究对经过化学结构修饰的喜树碱类衍生物进行抗HIV活性及作用机制的研究，并初步探讨了其抗HIV构效关系。 我们对喜树碱类衍生物A系列化合物A1(喜树碱)、A2(10-羟基喜树碱)及A3(7-羟基喜树碱)进行了抗HIV活性检测。化合物A1和A3有较好的抗HIV-1和抗HIV-2活性，化合物A2没有显示抗HIV活性。表明化合物A1的C-10位上-OH基团修饰可能会降低抗HIV活性，化合物A1的C-7位上-CH2OH基团修饰和C-20位-CH3缺失可能会提高其抗HIV活性。对化合物A3和A1的抗HIV机制研究发现：二者对整合酶有一定的结合活性，对慢性感染H9/HIV-1ⅢB 和Jurkat/HIV-1ⅢB细胞中病毒复制没有抑制活性、不能阻断H9/HIV-1ⅢB与正常细胞间的融合，对重组的HIV-1蛋白酶和逆转录酶没有抑制活性。化合物A1和A3不具有选择性杀伤HIV-1ⅢB慢性感染的H9和Jurkat细胞系的作用。进一步进行化合物A3诱导 H9和H9/HIV-1ⅢB、Jurkat和Jurkat/HIV-1ⅢB的凋亡实验显示，化合物A3诱导感染HIV-1ⅢB和未感染病毒细胞的凋亡没有选择性。据此我们初步认为化合物A3和A1的抗HIV作用可能与抑制整合酶活性有关，该化合物可能还作用于其它靶点。 喜树碱类衍生物B系列中化合物B1为20(S)-O - [-O-( 1'-氧基-2',2',6',6'-四甲基哌啶-4'-丁二酸)]-20-喜树碱酯，化合物B2为20(S)-O - [-N-( 1'-氧基-2',2',6',6'-四甲基-1',2',5',6'-四氢吡啶酰胺)-4'-丙氨酸)]-20-喜树碱酯)。我们对化合物B1和B2进行了抗HIV活性检测。结果显示：化合物B2有较好的抗HIV-1和抗HIV-21、喜树碱类衍生物抗HIV构效关系与作用机制研究 喜树碱为传统的抗肿瘤药物。本研究对经过化学结构修饰的喜树碱类衍生物进行抗HIV活性及作用机制的研究，并初步探讨了其抗HIV构效关系。 我们对喜树碱类衍生物A系列化合物A1(喜树碱)、A2(10-羟基喜树碱)及A3(7-羟基喜树碱)进行了抗HIV活性检测。化合物A1和A3有较好的抗HIV-1和抗HIV-2活性，化合物A2没有显示抗HIV活性。表明化合物A1的C-10位上-OH基团修饰可能会降低抗HIV活性，化合物A1的C-7位上-CH2OH基团修饰和C-20位-CH3缺失可能会提高其抗HIV活性。对化合物A3和A1的抗HIV机制研究发现：二者对整合酶有一定的结合活性，对慢性感染H9/HIV-1ⅢB 和Jurkat/HIV-1ⅢB细胞中病毒复制没有抑制活性、不能阻断H9/HIV-1ⅢB与正常细胞间的融合，对重组的HIV-1蛋白酶和逆转录酶没有抑制活性。化合物A1和A3不具有选择性杀伤HIV-1ⅢB慢性感染的H9和Jurkat细胞系的作用。进一步进行化合物A3诱导 H9和H9/HIV-1ⅢB、Jurkat和Jurkat/HIV-1ⅢB的凋亡实验显示，化合物A3诱导感染HIV-1ⅢB和未感染病毒细胞的凋亡没有选择性。据此我们初步认为化合物A3和A1的抗HIV作用可能与抑制整合酶活性有关，该化合物可能还作用于其它靶点。 喜树碱类衍生物B系列中化合物B1为20(S)-O - [-O-( 1'-氧基-2',2',6',6'-四甲基哌啶-4'-丁二酸)]-20-喜树碱酯，化合物B2为20(S)-O - [-N-( 1'-氧基-2',2',6',6'-四甲基-1',2',5',6'-四氢吡啶酰胺)-4'-丙氨酸)]-20-喜树碱酯)。我们对化合物B1和B2进行了抗HIV活性检测。结果显示：化合物B2有较好的抗HIV-1和抗HIV-2活性，而化合物B1的抗HIV活性差。表明化合物B1的C-4’位-CH2被-NH取代，同时C-3’位-CH3修饰可能会提高其抗HIV活性。对化合物B2的抗HIV机制研究发现，化合物B2对慢性感染H9/HIV-1ⅢB细胞中病毒复制没有抑制活性、不能阻断H9/HIV-1ⅢB与正常细胞间的融合，对HIV-1蛋白酶、重组的HIV-1逆转录酶及整合酶没有抑制活性。化合物B2不具有选择性杀伤HIV-1ⅢB慢性感染的H9细胞系的作用。化合物B2抗HIV的作用机制还需进一步研究。 2、HIV/AIDS患者疱疹病毒感染状况及性病患者的HIV感染状况分析 疱疹病毒是AIDS患者合并感染的常见病原体。引起人类疾病的8种疱疹病毒与HIV感染及AIDS进展、机会性感染、恶性肿瘤密切相关。为了解HIV/AIDS患者人类8型疱疹病毒感染状况，我们检测了30例AIDS患者、40例HIV携带者及70例正常对照的液标本中8型疱疹病毒感染状况。采用ELISA法检测单纯疱疹病毒1型(HSV-1)、单纯疱疹病毒2型(HSV-2)、水痘-带状疱疹病毒(VZV)和巨细胞病毒(CMV)；采用PCR法检测EB病毒(EBV)、疱疹病毒6型(HHV-6)、疱疹病毒7型(HHV-7)及疱疹病毒8型(HHV-8)。结果显示，HIV/AIDS患者中HSV-1、HSV-2、VZV、CMV、HHV-6、HHV-8 阳性率均高于健康体检者，其中AIDS患者VZV感染率与HIV携带者有显著性差异；在AIDS患者中多种疱疹病毒共感染普遍存在，必须重视HIV/AIDS患者合并疱疹病毒感染的防治。 性病可促进HIV的传播，了解性病患者的HIV感染状况及临床特征具有重要的意义。在自愿接受HIV咨询检测的基础上，对临床确诊的412例性病患者进行HIV-1/2抗体检测，并对其临床特征进行分析研究。结果显示412例性病患者的HIV检出率为2.9%。性病患者中检出HIV阳性率依次为：尖锐湿疣(6.2%)、生殖器疱疹(4.2%)、梅毒(3.4%)、淋病(1.5%)及非淋菌性尿道炎(1.0%)。83.3%合并感染HIV的性病患者存在多性伴，商业性行为普遍存在，安全套使用率极低现象。感染HIV的尖锐湿疣及生殖器疱疹患者以频繁复发为突出表现，1例合并感染HIV的梅毒患者半年即进展为神经梅毒。性病患者是HIV感染的重要高危人群，危险性行为是其感染HIV和其它性病的主要原因，应该加强性病患者的HIV检测。对临床上频繁复发的尖锐湿疣及生殖器疱疹患者、快速进展的梅毒患者应高度怀疑合并HIV感染的可能。

1-Gb/s zero-pole cancellation CMOS transimpedance amplifier for Gigabit Ethernet applications

A zero-pole cancellation transimpedance amplifier (TIA) has been realized in 0.35 μm RF CMOS tech nology for Gigabit Ethernet applications. The TIA exploits a zero-pole cancellation configuration to isolate the input parasitic capacitance including photodiode capacitance from bandwidth deterioration. Simulation results show that the proposed TIA has a bandwidth of 1.9 GHz and a transimpedance gain of 65 dB·Ω for 1.5 pF photodiode capaci tance, with a gain-bandwidth product of 3.4 THz·Ω. Even with 2 pF photodiode capacitance, the bandwidth exhibits a decline of only 300 MHz, confirming the mechanism of the zero-pole cancellation configuration. The input resis tance is 50 Ω, and the average input noise current spectral density is 9.7 pA/(Hz)~(1/2). Testing results shows that the eye diagram at 1 Gb/s is wide open. The chip dissipates 17 mW under a single 3.3 V supply.

Growth of near planar Si0.5Ge0.5 epitaxial layers directly on Si substrate by UHV/CVD at 500℃

The relationship between Ge content of Si1-xGex layers and growth conditions was investigated via UHV/CVD system at relative low temperature of 500℃. Si1-xGex layers were in a metastable state in this case. 10-period strained 3.0 nm- Si0.5Ge0.5/3.4 nm- Si multi quantum wells were obtained directly on Si substrate. Raman Measurement, high resolution electron microscopy and photoluminescence were used to characterize the structural and optical properties. It is found that such relative thick Si0.5Ge0.5/Si multi quantum wells are still near planar and free of dislocations, that makes it exploit applications to electrical and optical devices.

Design of Tensile Strained InGaAsP/InGaAsP MQW for 1.55μmpolarization Indepent Semiconductor Optical Amplifier

The theoretical optimization of tensile strained InGaAsP/InGaAsP MQW for 1.5μm window polarization-independent semiconductor optical amplifier is reported. The valence-band structure of the MQw is calculated by using K·P method, in which 6×6 Luttinger effective-mass Hamiltonian is taken into account. LThe polarization dependent optical gain is calculated with various well width, strain, and carrier density.