低甲醇透过直接甲醇燃料电池(Low Methanol Crossover Direct Methanol Fuel Cell)

直接甲醇燃料电池与间接甲醇燃料电池相比，体积更小，重量更轻，因此在一些领域有诱人的应用前景。但是，在它们实际应用之前，必须解决一些具体的技术难题。目前，甲醇从阳极透过到阴极是影响电池性能的主要难题之一，另外，催化剂和电极的制备方法也对电池的性能有重要的影响。本论文的主要目的在于研制低甲醇透过直接甲醇燃料电池并有效地提高电池的性能。为了减小甲醇在Nafion117膜中的透过，提出并研制了铭纳米粒子修饰的Nafion复合膜，该方法包括与[Pd(NH_4)_4]~(2+)离子的离子交换过程和化学还原过程。研究了一种制备高分散性铂基催化剂的方法。另外我们还研究并分析了不同的电池运行参数，例如温度、甲醇浓度等，刘一电池性能和甲醇透过的影响。主要结果如下：1.采用离子交换还原法在Nafionll7膜内部沉积纳米把粒子，制备成高聚物电解质复合膜。研究了镀把前后Nafion膜表面形态、甲醇透过和膜的电导的变化和对直接甲醇燃料电池的性能的影响等。由于把纳米粒子阻碍了甲醇透过，同时，由于它对氢离子的强吸引力，不但不对氢离子的透过产生影响，而且还提高了膜佩狗电导。所以镀把后电解质膜的甲醇透过减少，膜电导增加，无论在低电流密度区还是在高电流密度区，电池性能都有效地提高。2.研究了一种制备高分散性铂基催化剂的新方法一预沉淀还原法。并采用TEM,XRD和电化学等技术来表征催化剂中铂的粒径、晶态结构和催化活性：与传统的化学还原法相比，因为该方法在化学还原过程中反应物与载体的作用力得到增强，所以采用该方法制备的催化剂铂分散性更好、晶态结构更低、粒径更小并且催化活性更好。该方法在直接甲醇燃料一电池中有应用价值。3.研究并分析了不同的电池运行参数，例如温度、甲醇浓度等，对电池性能和甲醇透过的影响。研究发现当电池运行温度增加时，电池性能提高，甲醇透过增加；甲醇浓度增加时，甲醇透过增加，但是，甲醇浓度对电池性能有不同的影响，在低甲醇浓度区，甲醇浓度增加，电池性能提高；在高甲醇浓度区，甲醇浓度增加，电池性能降低；存在一个最佳甲醇浓度，在该甲醇浓度的条件下，电池的性能最高。实验结果为：采用Nafion117膜时，电池的最佳甲醇浓度为2. 0 mol/L，采用镀把Nafion117膜时，电池的最佳甲醇浓度高于4.0 mol/Lo

THIN-FILM BIPBSRCACUO DIRECT-CURRENT SUPERCONDUCTING QUANTUM INTERFERING DEVICES OPERATING AT 78-K

Direct current SQUIDs (superconducting quantum interference devices) have been successfully fabricated by using a Pb-doped BiSrCaCuO superconducting thin film made by mixed evaporation of a single source composed of related components with a resistance heater. The dc SQUID comprises a square washer with a small hole. These SQUIDs show perfectly periodic voltage-flux characteristics without magnetic shield, that is, typically, the flux noise and energy resolution at a frequency range from dc to 1 Hz and at 78 K being 1.7 x 10(-3) PHI-0/ square-root Hz and 3.6 x 10(-26) J/Hz, respectively. Meanwhile, we have found out that one of the SQUIDs still was able to operate on flux-locked mode without bias currents and showed voltage-flux second harmonic characteristics. This phenomenon is not well understood, but it may be related to I-V (current-voltage) characteristics of the dc SQUID.

DIRECT ION-BEAM DEPOSITION OF CARBON-FILMS ON SILICON IN THE ION ENERGY-RANGE OF 15-500 EV

Direct ion beam deposition of carbon films on silicon in the ion energy range of 15-500 eV and temperature range of 25-800-degrees-C has been studied. The work was carried out using mass-separated C+ and CH3+ ions under ultrahigh vacuum. The films were characterized with x-ray photoelectron spectroscopy, Raman spectroscopy, transmission electron microscopy, and transmission electron diffraction analysis. In the initial stage of the deposition, carbon implanted into silicon induced the formation of silicon carbide, even at room temperature. Further carbon ion bombardment then led to the formation of a carbon film. The film properties were sensitive to the deposition temperature but not to the ion energy. Films deposited at room temperature consisted mainly of amorphous carbon. Deposition at a higher temperature, or post-deposition annealing, led to the formation of microcrystalline graphite. A deposition temperature above 800-degrees-C favored the formation of microcrystalline graphite with a preferred orientation in the (0001) direction. No evidence of diamond formation in these films was observed.

Self-formed InGaAs/GaAs quantum dot superlattice and direct observation on strain distribution in the capped superlattice

We have demonstrated a 20 period dislocation-free InGaAs/GaAs quantum dot superlattice which is self-formed by the strain from the superlattice taken as a whole rather than by the strain from the strained single layer. The island formation does not take place while growing the corresponding strained single layer. From the variation of the average dot height in each layer, the strain distribution and relaxation process in the capped superlattice have been examined. It is found that the strain is not uniformly distributed and the greatest strains occur at two interfaces between the superlattice and the substrate and the cap layer in the capped superlattice. (C) 1997 American Institute of Physics.

DIRECT OBSERVATION FOR THE REDUCTION OF EXCITON BINDING-ENERGY INDUCED BY PERPENDICULAR ELECTRIC-FIELD

We experimentally study the effect of perpendicular electric field on the exciton binding energy using a specially designed step quantum well. From photoluminescence spectra at the temperature of 77 K, we have directly observed remarkable blueshift of the exciton peak due to the transition from spatially direct to spatially indirect excitons induced by electric field. (C) 1995 American Institute of Physics.

A high speed direct digital frequency synthesizer realized by a segmented nonlinear DAC

This paper presents a high speed ROM-less direct digital frequency synthesizer (DDFS) which has a phase resolution of 32 bits and a magnitude resolution of 10 bits. A 10-bit nonlinear segmented DAC is used in place of the ROM look-up table for phase-to-sine amplitude conversion and the linear DAC in a conventional DDFS.The design procedure for implementing the nonlinear DAC is presented. To ensure high speed, current mode logic (CML) is used. The chip is implemented in Chartered 0.35μm COMS technology with active area of 2.0 × 2.5 mm~2 and total power consumption of 400 mW at a single 3.3 V supply voltage. The maximum operating frequency is 850 MHz at room temperature and 1.0 GHz at 0 ℃.

A low power high linearity baseband for a direct conversation CMMB tuner

An analog baseband circuit made in a 0.35-μm SiGe BiCMOS process is presented for China Multimedia Mobile Broadcasting (CMMB) direct conversion receivers. A high linearity 8th-order Chebyshev low pass filter (LPF) with accurate calibration system is used. Measurement results show that the filter provides 0.5-dB pass-band ripple, 4% bandwidth accuracy, and -35-dB attenuation at 6 MHz with a cutoff frequency of 4 MHz. The current steering type variable gain amplifier (VGA) achieves more than 40-dB gain range with excellent temperature compensation.This tuner baseband achieves an OIP3 of 25.5 dBm, dissipates 16.4 mA under a 2.8-V supply and occupies 1.1 mm~2 of die size.

A widely tunable continuous-time LPF for a direct conversion DBS tuner

A continuous-time 7th-order Butterworth Gm-C low pass filter (LPF) with on-chip automatic tuning circuit has been implemented for a direct conversion DBS tuner in 0.35μm SiGe BiCMOS technology. The filter's -3 dB cutoff frequency f0 can be tuned from 4 to 40 MHz. A novel on-chip automatic tuning scheme has been successfully realized to tune and lock the filter's cutoff frequency. Measurement results show that the filter has -0.5 dB passband gain, +/- 5% bandwidth accuracy, 30 nV/Hz~(1/2) input referred noise, -3 dBVrms passband IIP3, and 27 dBVrms stopband IIP3. The I/Q LPFs with the tuning circuit draw 13 mA (with f_0 = 20 MHz) from 5 V supply, and occupy 0.5 mm~2.

A Compact Direct Digital Frequency Synthesizer for the Rubidium Atomic Frequency Standard

A compact direct digital frequency synthesizer （DDFS） for system-on-chip implementation of the high precision rubidium atomic frequency standard is developed. For small chip size and low power consumption, the phase to sine mapping data is compressed using sine symmetry technique, sine-phase difference technique, quad line approximation technique,and quantization and error read only memory （QE-ROM） technique. The ROM size is reduced by 98% using these techniques. A compact DDFS chip with 32bit phase storage depth and a 10bit on-chip digital to analog converter has been successfully implemented using a standard 0.35μm CMOS process. The core area of the DDFS is 1.6mm^2. It consumes 167mW at 3.3V,and its spurious free dynamic range is 61dB.