Magnetic field induced charge redistribution in artificially disordered quantum Hall superlattices

The photoluminescence from individual quantum wells of artificially disordered weakly coupled multi-layers embedded in wide AlGaAs parabolic wells was investigated in a strong magnetic field. We show that the response of the individual wells is very different from the average response of the multi-layers studied by transport measurements and that photoluminescence represents a local probe of the quantum Hall state formed in three-dimensional electron system. The observed magnetic field induced variations of the in-layer electron density demonstrate the formation of a new phase in the quasi-three-dimensional electron system. The sudden change in the local electron density found at the Landau filling factor nu = 1 by both the magneto-transport and the magneto-photoluminescence measurements was assigned to the quantum phase transition. Copyright (C) EPLA, 2012

Intrusiones de la corriente de Kuroshio en el mar de China oriental

[EN]The Kuroshio is known to intrude onto the continental shelf in the southern East China Sea northeast of Taiwan. Two types of intrusions are observed: large and small, depending on how far the Kuroshio penetrates onto the ECS continental shelf, and on the location where it crosses the shelf break. This study demonstrates that cyclonic eddies from the western Pacific induce some of these large Kuroshio intrusions. The large intrusions are identified from more than 20 years of drifter tracks archived in the Global Drifter Program historical database and from weekly and biweekly drifter deployments carried out between April 2008 and September 2009 west of the Green Island (Taiwan). Kuroshio intrusions are observed in all seasons. Cyclonic mesoscale eddies, generated in the Subtropical Countercurrent and North Equatorial Current regions of the northwest Pacific Ocean, propagate westward into the Kuroshio and are well correlated with the observed intrusions. During the intrusions, the mean sea level anomaly computed from AVISO gridded maps shows a well defined cyclonic circulation southeast of the I-Lan ridge. The mean sea level anomaly also shows the meandering pattern of the Kuroshio when it intrudes onto the continental shelf of the southern East China Sea. The high correlation between the Kuroshio volume transport in the East Taiwan Channel (observed with moorings) and the satellite sea level anomaly permits us to use sea level anomaly as a proxy for the Kuroshio volume transport. When direct transport measurements are not available, this proxy is used to verify that intrusions due to the westward propagating eddies occur when the Kuroshio transport is low. An analytical reduced gravity model of an incident baroclinic current upon a step shelf is used to explain the difference between the large and small intrusions.

Pinning-Effekte kolumnarer Schwerionenspuren in Kuprat-Supraleiter-Dünnschichten

In this work the flux line dynamics in High-Temperature Superconductor (HTSC) thin films in the presence of columnar defects was studied using electronic transport measurements. The columnar defects which are correlated pinning centers for vortices were generated by irradiation with swift heavy ions at the Gesellschaft für Schwerionenforschung (GSI) in Darmstadt. In the first part, the vortex dynamics is discussed within the framework of the Bose-glass model. This approach describes the continuous transition from a vortex liquid to a Bose-glass phase which is characterized by the localization of the flux lines at the columnar defects. The critical behavior of the characteristic length and time scales for temperatures in the vicinity of this phase transition were probed by scaling properties of experimentally obtained current-voltage characteristics. In contrast to the predicted universal properties of the critical behavior the scaling analysis shows a strong dependence of the dynamic critical exponent on the experimentally accessible electric field range. In addition, the predicted divergence of the activation energy in the limit of low current densities was experimentally not confirmed.The dynamic behavior of flux lines in spatially resolved irradiation geometries is reported in the second part. Weak pinning channels with widths between 10 µm and 100 µm were generated in a strong pinning environment with the use of metal masks and the GSI microprobe, respectively. Measurements of the anisotropic transport properties of these structures show a striking resemblance to the results in YBCO single crystals with unidirected twin boundaries which were interpreted as a guided vortex motion effect. The use of two additional test bridges allowed to determine in parallel the resistivities of the irradiated and unirradiated parts as well as the respective current-voltage characteristics. These measurements provided the input parameters for a numerical simulation of the potential distribution in the spatially resolved irradiation geometry. The results are interpreted within a model that describes the hydrodynamic interaction between a Bose-glass phase and a vortex liquid. The interface between weakly pinned flux lines in the unirradiated channels and strongly pinned vortices leads to a nonuniform vortex velocity profile and therefore a variation of the local electric field. The length scale of these interactions was estimated for the first time in measuring the local variation of the electric field profile in a Bose-glass contact.Finally, a method for the determination of the true temperature in HTSC thin films at high dissipation levels is described. In this regime of electronic transport the occurrence of a flux flow instability is accompanied by heating effects in the vortex system. The heat propagation properties of the film/substrate system are deduced from the time dependent voltage response to a short high current density pulse of rectangular shape. The influence of heavy ion irradiation on the heat resistance at the film/substrate interface is studied.

Unconventional superconductivity of the heavy fermion compound UNi 2 Al 3

The heavy fermion compound UNi2Al3 exhibits the coexistence of superconductivity and magnetic order at low temperatures, stimulating speculations about possible exotic Cooper-pairing interaction in this superconductor. However, the preparation of good quality bulk single crystals of UNi2Al3 has proven to be a non-trivial task due to metallurgical problems, which result in the formation of an UAl2 impurity phase and hence a strongly reduced sample purity. The present work concentrates on the preparation, characterization and electronic properties investigation of UNi2Al3 single crystalline thin film samples. The preparation of thin films was accomplished in a molecular beam epitaxy (MBE) system. (100)-oriented epitaxial thin films of UNi2Al3 were grown on single crystalline YAlO3 substrates cut in (010)- or (112)-direction. The high crystallographic quality of the samples was proved by several characterisation methods, such as X-ray analysis, RHEED and TEM. To study the magnetic structure of epitaxial thin films resonant magnetic x-ray scattering was employed. The magnetic order of thin the film samples, the formation of magnetic domains with different moment directions, and the magnetic correlation length were discussed. The electronic properties of the UNi2Al3 thin films in the normal and superconducting states were investigated by means of transport measurements. A pronounced anisotropy of the temperature dependent resistivity ρ(T) was observed. Moreover, it was found that the temperature of the resistive superconducting transition depends on the current direction, providing evidence for multiband superconductivity in UNi2Al3. The initial slope of the upper critical field H′c2(T) of the thin film samples suggests an unconventional spin-singlet superconducting state, as opposed to bulk single crystal data. To probe the superconducting gap of UNi2Al3 directly by means of tunnelling spectroscopy many planar junctions of different design employing different techniques were prepared. Despite the tunneling regime of the junctions, no features of the superconducting density of state of UNi2Al3 were ever observed. It is assumed that the absence of UNi2Al3 gap features in the tunneling spectra was caused by imperfections of the tunnelling contacts. The superconductivity of UNi2Al3 was probably suppressed just in a degraded surface layer, resulting in tunneling into non superconducting UNi2Al3. However, alternative explanations such as intrinsic pair breaking effects at the interface to the barrier are also possible.

Cobalt dotiertes ZnO als verdünnter magnetischer Halbleiter

Verdünnte magnetische Halbleiter (DMS) sind technologisch vielversprechende Materialien mit sowohl ferromagnetischen als auch halbleitenden Eigenschaften. Sie gehören zu den entscheidenden Verbindungen bei der Entwicklung neuartiger Spintronikanwendungen. Bisher scheiterte der technologische Einsatz jedoch daran, dass die Curie Temperatur der meisten magnetischen Halbleiter viel zu niedrig ist. Neue Verbindungen auf Basis von ZnO wie Zn1-xCoxO sollen jedoch Ferromagnetismus oberhalb von Raumtemperatur zeigen. Die theoretischen Grundlagen der magnetischen Wechselwirkungen sind jedoch nicht verstanden und erfordern daher umfangreiche experimentelle Untersuchungen. Im Rahmen dieser Arbeit wurden dünne Filme aus Zn0.95Co0.05O mittels Laserablation hergestellt und bezüglich ihrer magnetischen, elektrischen und strukturellen Eigenschaften untersucht, mit dem Ziel den Ferromagnetismus in diesem Material besser zu verstehen. Dabei kamen verschiedene experimentelle Methoden zum Einsatz: wie Magnetometrie, Röntgendiffraktometrie, Magnetischer Röntgenzirkulardichroismus (XMCD), Elektronenspinresonanz sowie magnetoelektrische Transportmessungen. Bei entsprechend defektfördernden Herstellungsbedingungen zeigen die Proben klare ferromagnetische Eigenschaften oberhalb von Raumtemperatur mit einer Sättigungsmagnetisierung von ca. 2 Bohr Magneton / Co sowie einer Remanenz von bis zu 90%. Elektrische Transportmessungen zeigen zudem einen deutlichen Magnetowiderstand sowie einen anomalen Hall Effekt. Letzterer steigt mit der Probenmagnetisierung und spricht für intrinsischen Ferromagnetismus sowie eine geringe Spinpolarisation. Da der Ferromagnetismus mit höherer Ladungsträgerdichte jedoch verschwindet, ist eine ferromagnetische Wechselwirkung über die Leitungselektronen auszuschließen. Eine genauere Auswertung der magnetoelektrischen Messdaten deutet zudem auf ein leitendes Störstellenband hin, das unter Umständen selbst spinpolarisiert ist. Vieles spricht somit dafür, dass die ferromagnetische Ordnung über magnetische Polaronen zustande kommt. Einige strukturelle und magnetometrische Ergebnisse sowie Elektronenspinresonanzmessungen deuten zudem auf metallische Ausscheidungen in Form von Cobalt Clustern hin, die einen zusätzlichen extrinsischen ferromagnetischen Beitrag liefern, der deutlich größer sein könnte als der intrinsische. Überraschenderweise zeigen XMCD Messungen jedoch, dass Cobalt überhaupt nicht am Ferromagnetismus beteiligt ist. Insgesamt gibt es Anzeichen, dass magnetische Defekte eine entscheidende Rolle hinsichtlich des Magnetismus in Zn0.95Co0.05O spielen.

Wachstum und Transporteigenschaften dünner Co-basierter Heusler-Filme

For the advancement of spinelectronicsmuch importance is attached to Heusler compounds. Especially compounds with the stoichiometry Co2YZ are supposed to exhibit a large asymmetry between majority and minority electrons at the Fermi edge. Ideally, only majority states are present. This property leads to high magnetoresistive effects. However, the experimental results available at present fall behind the expectations. In particular, a strong reduction of the spin asymmetry with increasing temperature is problematic. For this reason,rnthe investigation of further representatives of this material class as well as optimization of their deposition is required. Therefore, during the course of this work thin Heusler films with the composition Co2Cr0.6Fe0.4Al and Co2Mn1−xFexSi were fabricated. At first, this was accomplished by sputter deposition, which is the standard technique for the preparation of thin Heuslerrnfilms. It resulted also here in samples with high structural order. On the other hand, these films exhibit only a reduced magnetic moment. To improve this situation, a laser ablation system was constructed. The resulting film deposition under ultra-high vacuum led to a clear improvement especially of the magnetic properties. In addition to the improved deposition conditions, this method allowed the flexible variation of the film stoichiometry as well. This possibility was successfully demonstrated in this work by deposition of epitaxial Co2Mn1−xFexSi films. The availableness of these high quality quaternary alloys allowed the systematic investigation of their electronic properties. Band structure calculations predict that the substitution of Mn by Fe lead to a shift of the Fermi energy over the minority energy gap, whereas the density of states remains nearly unchanged. This prediction could by tested by electronic transport measurements. Especially the normal Hall effect, which was measured at these samples, shows a transition from a hole-like charge transport in Co2MnSi to an electron-like transport in Co2FeSi. This is in accordance with corresponding band structure calculations as well as with comparative XMCD experiments. Furthermore, the behavior of the anomalous Hall effect was studied. Here it could be seen, that the effect is influenced by two mechanisms: On the one hand an intrinsic contribution, caused by the topology of the Fermi surface and on the other hand by temperature dependent impurity scattering. These two effects have an opposing influence on the anomalous Hall effect. This can lead to a sign reversal of the anomalous contribution. This behavior has been predicted just recently and was here systematically investigated for the first time for Heusler compounds.

Electronic structure and physical properties of Heusler compounds for thermoelectric and spintronic applications

This thesis focuses on synthesis as well as investigations of the electronic structure and properties of Heusler compounds for spintronic and thermoelectric applications.rnThe first part reports on the electronic and crystal structure as well as the mechanical, magnetic, and transport properties of the polycrystalline Heusler compound Co2MnGe. The crystalline structure was examined in detail by extended X-ray absorption fine structure spectroscopy and anomalous X-ray diffraction. The low-temperature magnetic moment agrees well with the Slater-Pauling rule and indicates a half-metallic ferromagnetic state of the compound, as is predicted by ab-initio calculations. Transport measurements and hard X-ray photoelectron spectroscopy (HAXPES) were performed to explain the electronic structure of the compound.rnA major part of the thesis deals with a systematical investigation of Heusler compounds for thermoelectric applications. Few studies have been reported on thermoelectric properties of p-type Heusler compounds. Therefore, this thesis focuses on the search for new p-type Heusler compounds with high thermoelectric efficiency. The substitutional series NiTi1−xMxSn and CoTi1−xMxSb (where M = Sc, V and 0 ≤ x ≤ 0.2) were synthesized and investigated theoretically and experimentally with respect to electronic structure and transport properties. The results show the possibility to create n-type and p-type thermoelectrics within one Heusler compound. The pure compounds showed n-type behavior, while under Sc substitution the system switched to p-type behavior. A maximum Seebeck coefficient of +230 μV/K (at 350 K) was obtained for NiTi0.26Sc0.04Zr0.35Hf0.35Sn, which is one of the highest values for p-type thermoelectric compounds based on Heusler alloys up to now. HAXPES valence band measurement show massive in gap states for the parent compounds NiTiSn, CoTiSb and NiTi0.3Zr0.35Hf0.35Sn. This proves that the electronic states close to the Fermi energy play a key role for the behavior of the transport properties. Furthermore, the electronic structure of the gapless Heusler compounds PtYSb, PtLaBi and PtLuSb were investigated by bulk sensitive HAXPES. The linear behavior of the spectra close to εF proves the bulk origin of Dirac-cone type density of states. Furthermore, a systematic study on the optical and transport properties of PtYSb is presented. The compound exhibits promising thermoelectric properties with a high figure of merit (ZT = 0.2) and a Hall mobility μh of 300 cm2/Vs at 350 K.rnThe last part of this thesis describes the linear dichroism in angular-resolved photoemission from the valence band of NiTi0.9Sc0.1Sn and NiMnSb. High resolution photoelectron spectroscopy was performed with an excitation energy of hν = 7.938 keV. The linear polarization of the photons was changed using an in-vacuum diamond phase retarder. Noticeable linear dichroism is found in the valence bands and this allows for a symmetry analysis of the contributing states. The differences in the spectra are found to be caused by symmetry dependent angular asymmetry parameters, and these occur even in polycrystalline samples without preferential crystallographic orientation.rnIn summary, Heusler compounds with 1:1:1 and 2:1:1 stoichiometry were synthesized and examined by chemical and physical methods. Overall, this thesis shows that the combination of first-principle calculations, transport measurements and high resolution high energy photoelectron spectroscopy analysis is a very powerful tool for the design and development of new materials for a wide range of applications from spintronic applications to thermoelectric applications.rn

Thermoelektrische Eigenschaften dünner Schichten und Übergitterstrukturen von IV-VI- und V-VI-Verbundhalbleitern

Als ein vielversprechendes Konzept zur Erhöhung der thermoelektrischen Effizienz wird seit Anfang der 90er Jahre die Nutzung niederdimensionaler Systeme angesehen. Aus theoretischen Arbeiten von Hicks und Dresselhaus folgt, dass in ein- und zweidimensionalen Systemen eine Erhöhung der thermoelektrischen Effizienz möglich ist, die einen Durchbruch für die Anwendung thermoelektrischer Wandler zur Folge haben könnte. Die Realisierung solcher niederdimensionaler Systeme ist in geeigneten Mehrlagenstrukturen und durch Verwendung von Halbleiterverbindungen mit unterschiedlicher Energiebandlücke möglich. Ziel des Verbundprojektes Nitherma war es Mehrfachschichtsysteme mit 2-dimensionalem Transportverhalten aus thermoelektrischen Materialien (Pb1-xSrxTe, Bi2(SexTe1-x)3) herzustellen und auf die erwartete hohe thermoelektrische Effizienz zu untersuchen. Diese wurde messtechnischrndurch die Bestimmung der elektrischen Leitfähigkeit, des Seebeck-Koeffizienten und der Wärmeleitfähigkeit parallel zu den Schichtebenen (in-plane-Transporteigenschaft) ermittelt. Ziel dieser Arbeit war einerseits die Verbesserung der Präparations- und Messtechnik bei der Untersuchung der Wärmeleitfähigkeit von Schichten und Schichtsystemen sowie die Demonstration der Reproduzierbarkeit, andererseits die Interpretation der an niederdimensionalen Strukturen ermittelten Transportmessungen. Um den Einfluß der Niederdimensionalität auf die Wärmeleitfähigkeit zu ermitteln, wurden umfangreiche Messungen an unterschiedlich dimensionierten Übergitter- und Multi-Quantum-Well-Strukturen (MQW-Strukturen) durchgeführt. Die Verifizierung der von den Projektpartnern durchgeführten Transportmessungen wurde durch die Messung des Seebeck-Koeffizienten unterstützt.Neben der Charakterisierung durch Transportmessungen erfolgte die Bestimmung der thermoelektrischen Effizienz.

Bindeprotein-abhängige DctS-Sensorkinasen aus Bacillus subtilis und Geobacillus kaustophilus

Das Enterobakterium Escherichia coli sowie das Bodenbakterium Bacillus subtilis können C4-Dicarbonsäuren als aerobe Kohlenstoffquelle zur Energiekonservierung nutzen. Die Regulation des C4-Dicarboxylatstoffwechsels erfolgt in E. coli und B. subtilis durch das Zweikomponentensystem DcuSREc bzw. DctSRBs, bestehend aus einer Sensorkinase und einem Responseregulator. Diese kontrollieren die Expression des C4-Dicarboxylat-Transporters DctA. Der Sensor DcuSEc benötigt für seine Funktion im aeroben Stoffwechsel den Transporter DctA als Cosensor. Für das DctSRBs-System gibt es Hinweise aus genetischen Untersuchungen, dass DctSBs das Bindeprotein DctBBs und möglicherweise auch DctABs als Cosensoren für seine Funktion benötigt. In dieser Arbeit sollte ein direkter Nachweis geführt werden, ob DctBBs und DctABs gemeinsam oder nur jeweils eine der Komponenten als Cosensoren für DctSBs fungieren. Sowohl für DctBBs als auch für DctABs wurde eine direkte Protein-Protein-Interaktion mit DctSBs durch zwei in vivo Interaktionsmethoden nachgewiesen. Beide Methoden beruhen auf der Co-Reinigung der Interaktionspartner mittels Affinitätschromatographie und werden je nach Affinitätssäule als mSPINE oder mHPINE (Membrane Strep/His-Protein INteraction Experiment) bezeichnet. Die Interaktion von DctSBs mit DctBBs wurde zusätzlich über ein bakterielles Two-Hybrid System nachgewiesen. Nach Coexpression mit DctSBs interagieren DctABs und DctBBs in mSPINE-Tests gleichzeitig mit der Sensorkinase. DctSBs bildet somit eine sensorische DctS/DctA/DctB-Einheit in B. subtilis und das Bindeprotein DctBBs agiert nur als Cosensor, nicht aber als Transport-Bindeprotein. Eine direkte Interaktion zwischen dem Transporter DctABs und dem Bindeprotein DctBBs besteht nicht. Transportmessungen belegen, dass der DctA-vermittelte Transport von [14C]-Succinat unabhängig ist von DctBBs. Außerdem wurde untersucht, ob Zweikomponentensysteme aus anderen Bakteriengruppen nach einem ähnlichen Schema wie DcuSREc bzw. DctSRBs aufgebaut sind. Das thermophile Bakterium Geobacillus kaustophilus verfügt über ein DctSR-System, welches auf genetischer Ebene mit einem Transporter des DctA-Typs und einem DctB-Bindeprotein geclustert vorliegt. Die Sensorkinase DctSGk wurde in E. coli heterolog exprimiert und gereinigt. Diese zeigt in einer E. coli DcuS-Insertionsmutanten Komplementation der DcuS-Funktion und besitzt dabei Spezifität für die C4-Dicarbonsäuren Malat, Fumarat, L-Tartrat und Succinat sowie für die C6-Tricarbonsäure Citrat. In Liposomen rekonstituiertes DctSGk zeigt Autokinase-Aktivität nach Zugabe von [γ-33P]-ATP. Der KD-Wert für [γ-33P]-ATP der Kinasedomäne von DctSGk liegt bei 43 μM, die Affinität für ATP ist damit etwa 10-fach höher als in DcuSEc.

Enhanced Exchange And Reduced Magnetization of Gd in an Fe/Gd/Fe Trilayer

The exchange interaction of Gd adjacent to Fe has been characterized by transport measurements on a double spin valve with a Fe/Gd/Fe trilayer as the middle layer. Our measurements show that the ferromagnetism of the Gd is enhanced by the presence of the Fe, and it remains ferromagnetic over its Curie temperature up to a thickness no smaller than 1 nm adjacent to the Fe. This thickness is more than double what has been reported before. Additionally, the saturation magnetization of the thin Gd layer sandwiched in Fe was found to be half of its bulk value. This reduced magnetization does not seem to be related to the proximity of Fe but rather to the incomplete saturation of Gd even for very high fields

Strategies to unblock the n-GaAs surface when electrodepositing Bi from acidic solutions

Bismuth ultra-thin films grown on n-GaAs electrodes via electrodeposition are porous due to a blockade of the electrode surface caused by adsorbed hydrogen when using acidic electrolytes. In this study, we discuss the existence of two sources of hydrogen adsorption and we propose different routes to unblock the n-GaAs surface in order to improve Bi films compactness. Firstly, we demonstrate that increasing the electrolyte temperature provides compact yet polycrystalline Bi films. Cyclic voltammetry scans indicate that this low crystal quality might be a result of the incorporation of Bi hydroxides within the Bi film as a result of the temperature increase. Secondly, we have illuminated the semiconductor surface to take advantage of photogenerated holes. These photocarriers oxidize the adsorbed hydrogen unblocking the surface, but also create pits at the substrate surface that degrade the Bi/GaAs interface and prevent an epitaxial growth. Finally, we show that performing a cyclic voltammetry scan before electrodeposition enables the growth of compact Bi ultra-thin films of high crystallinity on semiconductor substrates with a doping level low enough to perform transport measurements.

Estudo de efeitos da polarização eletrostática periférica no Tokamak TCABR

Efeitos da polarização eletrostática de eletrodos na periferia de tokamaks têm sido investigados em pequenos tokamaks e mesmo em alguns tokamaks de grande porte. Em geral as experiências são realizadas em condições em que bifurcação do campo elétrico radial é obtida, processo este identificado como modo H de polarização. No Tokamak TCABR, as experiências indicam que o confinamento aumenta para tensões aplicadas até +300 volts, atingindo um máximo de duas vezes o tempo de confinamento do modo L, mas sem bifurcação. Indícios de bifurcação foram notados com +400 V de polarização, mas a descarga termina devido à excitação da atividade MHD, ainda sob investigação. No presente trabalho, a pesquisa é aprofundada com a utilização de uma sonda de Langmuir com 18 pinos dispostos em duas fileiras sob a forma de um ancinho (rake probe) o que permite a medição da temperatura, densidade e flutuação de potencial ao longo do raio menor na periferia do Tokamak. A resolução temporal desse sistema é de cerca de 0,5 ms, para a temperatura, e 5 microssegundos para densidade e potencial flutuante do plasma. Outra sonda eletrostática com 5-pinos na mesma posição radial, mas em diferentes posições poloidal e toroidal foi usada para medições de turbulência e transporte de partículas. Os efeitos da polarização foram investigados e indicam que os níveis de turbulência e transporte começam a diminuir entre +150 e +200 V e para +300 V chegam a atingir uma quase supressão. Nesse mesmo intervalo de tensão a densidade começa a aumentar e para +300 V chega a ser um fator de aproximadamente 2. Quanto ao perfil de temperatura a variação é pouco significativa, mas as incertezas das medidas são maiores. Esses dados são compatíveis com a criação de uma barreira de transporte na região entre o eletrodo em r = 17 cm e o limitador em a = 18 cm. Além disso, o campo elétrico radial mostra forte cisalhamento nessa região. Tomando o início da subida do potencial flutuante como origem de uma escala de tempo, o atraso temporal do início da subida da densidade de elétrons e o atraso do início do decréscimo do transporte de partículas foram medidos. Os resultados são 50 microssegundos para a densidade de elétrons e 60 microssegundos para o transporte de partículas. A questão dos limiares de potência é discutida no texto. Os dados desta experiência indicam que o campo elétrico radial desempenha o papel principal para a melhoria do confinamento.

Magic-angle effects in the interlayer magnetoresistance of quasi-one-dimensional metals due to interchain incoherence

The dependence of the magnetoresistance of quasi-one-dimensional metals on the direction of the magnetic field show dips when the field is tilted at the so-called magic angles determined by the structural dimensions of the materials. There is currently no accepted explanation for these magic-angle effects. We present a possible explanation. Our model is based on the assumption that, the intralayer transport in the second most conducting direction has a small contribution from incoherent electrons. This incoherence is modeled by a small uncertainty in momentum perpendicular to the most conducting (chain) direction. Our model predicts the magic angles seen in interlayer transport measurements for different orientations of the field. We compare our results to predictions by other models and to experiment.

A boron nitride - graphene - C60 heterostructure

We have fabricated a new van-der-Waals heterostructure composed by BN/graphene/C60. We performed transport measurements on the preliminary BN/graphene device finding a sharp Dirac point at the neutrality point. After the deposition of a C60 thin film by thermal evaporation, we have observed a significant n-doping of the heterostructure. This suggests an unusual electron transfer from C60 into the BN/graphene structure. This BN/graphene/C60 heterostructure can be of interest in photovoltaic applications. It can be used to build devices like p-n junctions, where C60 can be easily deposited in defined regions of a graphene junction by the use of a shadow mask. Our results are contrasted with theoretical calculations.

Magnetophotoresistance in Pr 1–x CaxMnO3 Thin Films

In this work, a colossal magnetoresistive (CMR) Pr1−xCaxMnO3 (PCMO) man- ganite thin films and polycrystalline samples were studied with the main focus on the properties of the insulator to metal Mott phase transition. The polycrystalline PCMO samples were fabricated with the solid state reaction method. The polycrystalline sam- ples were further processed into the epitaxial thin films with the pulsed laser deposition method (PLD). The structural and magnetic properties of the samples were systemat- ically investigated and the thin films samples were further investigated with magneto- transport measurement where the thin films response to illumination was also studied. After the successful synthesis of polycrystalline PCMO samples with varying x = between 0.0 - 0.5, the magnetic characterization of the samples showed rich magnetic properties having the signatures of the magnetic phase coexistence of antiferromag- netic (AFM) and ferromagnetic (FM) ordering and cluster glass behaviour. With the increased doping concentration from x = 0.3 to 0.5, the AFM charge-order (CO) phase started to form up being strongest on the sample x = 0.5. This AFM CO phase could be melted with the high external magnetic field at temperatures below Neel’s tempera- ture TN inducing an irreversible first order metamagnetic AFM to FM phase transition. The strength of the AFM CO phase decreased with decreasing Ca concentration and increasing temperature. The polycrystalline PCMO samples with Ca concentrations of 0.3 - 0.5, showing metamagnetic behaviour, were selected for the fabrication of the thin film samples. The films were grown using two different in situ oxygen treatment temperatures at 500 ◦C and 700 ◦C in the PLD system. The films with x = 0.4 and 0.5 showed weaker AFM CO phase with greatly reduced melting fields when compared to polycrystalline samples. Also, the robustness of the AFM CO phase was further decreased in thin films with the lower oxygen treatment temperature of 500 ◦C. The magneto-transport measurements made on the thin films showed that the melting of AFM CO phase was connected to CMR effect where the increasing magnetic field induced an insulator to metal phase transition, which reduces the resistivity of the film around nine orders of magnitude. The use of illumination during the magneto-transport measurements showed a vari- ety of intriguing phenomena including magnetophotoresistance. The illumination had a huge effect to the insulator to metal transition (IMT) reducing the transition magnetic field significantly. Moreover, by magnetically biasing the thin films with the constant external magnetic field, the IMT could be induced by switching on the illumination.