A boron nitride - graphene - C60 heterostructure
Data(s) |
01/03/2015
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Resumo |
We have fabricated a new van-der-Waals heterostructure composed by BN/graphene/C60. We performed transport measurements on the preliminary BN/graphene device finding a sharp Dirac point at the neutrality point. After the deposition of a C60 thin film by thermal evaporation, we have observed a significant n-doping of the heterostructure. This suggests an unusual electron transfer from C60 into the BN/graphene structure. This BN/graphene/C60 heterostructure can be of interest in photovoltaic applications. It can be used to build devices like p-n junctions, where C60 can be easily deposited in defined regions of a graphene junction by the use of a shadow mask. Our results are contrasted with theoretical calculations. |
Identificador | |
Idioma(s) |
eng |
Direitos |
info:eu-repo/semantics/restrictedAccess |
Fonte |
Ojeda-Aristizabal , C , Santos , E J G , Onishi , S , Rasool , H , Velasco , J J , Kahn , S , Yan , A & Zettl , A A boron nitride - graphene - C60 heterostructure . |
Tipo |
other |