Effects of rapid thermal annealing on self-assembled InGaAs/GaAs quantum dots superlattice

Postgrowth rapid thermal annealing was used to study the relaxation mechanism and optical properties of InGaAs/GaAs self-assembled quantum dots superlattice grown by molecular beam epitaxy. It is found that a significant narrowing of the luminescence linewidth (from 80 to 42 meV) occurs together with about 86 meV blue shift at annealing temperature up to 950 degrees C. Double crystal X-ray diffraction measurements show that the intensity of the satellite diffraction peak, which corresponds to the quantum dots superlattice, decreased with the increasing annealing temperature and disappeared at 750 degrees C, but recovered and increased again at higher annealing temperatures. This behavior can be explained by two competing relaxation mechanisms; interdiffusion and favored migration. The study indicates that a suitable annealing treatment can improve the structural properties of the quantum dots superlattice. (C) 2000 Elsevier Science B.V. All rights reserved.

Effects of rapid thermal annealing on the optical properties of GaNxAs1-x/GaAs single quantum well structure grown by molecular beam epitaxy

The effect of rapid thermal annealing (RTA) on the optical properties of GaNxAs1-x/GaAs strained single quantum well (SQW) was studied by low-temperature photoluminescence (PL). The GaNxAs1-x/GaAs SQW structures were prepared by dc active nitrogen plasma assisted molecular beam epitaxy. PL measurements on a series of samples with different well widths and nitrogen compositions were used to evaluate the effects of RTA. The annealing temperature and time were varied from 650 to 850 degrees C and 30 s to 15 min, respectively. Remarkable improvements of the optical properties of the samples were observed after RTA under optimum conditions. The interdiffusion constants have been calculated by taking into account error function diffusion and solving the Schrodinger equation. The estimated interdiffusion constants D are 10(-17)-10(-16) cm(2)/s for the earlier annealing conditions. Activation energies of 6-7 eV are obtained by fitting the temperature dependence of the interdiffusion constants. (C) 2000 American Institute of Physics. [S0021-8979(00)10401-3].

Effect of rapid thermal annealing on Ti-AlN interfaces

The interface diffusion, reaction, and adherence of rapid thermal annealed Ti/ALN were investigated by RES, AES, SIMS, XRD and a scratch test. The experimental results show that diffusion and reaction occurs at the interface of Ti/AlN when the sample is rapidly annealed. During annealing, both the O adsorbed on the surface and doped in the AlN substrate diffuse into the Ti film. At low temperature TiO2 is produced. At higher temperature O reacts with the diffused Al in the Ti film and produces an Al2O3 layer in the middle of the film. N diffuses into the Ti film and produces TiN with an interface reaction. Ti oxide is produced at the interface between the film and the substrate. Scratch test results show that interface adherence is distinctly improved by rapid annealing at low temperature and decreases at higher temperature. (C) 1999 Elsevier Science B.V. All rights reserved.

Solid-phase crystallization and dopant activation of amorphous silicon films by pulsed rapid thermal annealing

An improved pulsed rapid thermal annealing method has been used to crystallize amorphous silicon films prepared by PECVD. The solid-phase crystallization and dopant activation process can be completed with time-temperature budgets such as 10 cycles of 60-s 550 degrees C thermal bias/l-s 850 degrees C thermal pulse. A mean grain size more than 1000 Angstrom and a Hall mobility of 24.9 cm(2)/V s are obtained in the crystallized films. The results indicate that this annealing method possesses the potential for fabricating large-area and good-quality polycrystalline silicon films on low-cost glass substrate. (C) 1998 Elsevier Science B.V. All rights reserved.

Influence of rapid thermal annealing on the optical properties of gallium nitride grown by gas-source molecular-beam epitaxy

Raman scattering, photoluminescence (PL), and nuclear reaction analysis (MA) have been employed to investigate the effects of rapid thermal annealing (RTA) on GaN films grown on sapphire (0001) substrates by gas-source molecular-beam epitaxy, The Raman spectra showed the presence of the E-2 (high) mode of GaN and shift of this mode from 572 to 568 cm(-1) caused by annealing. The results showed that RTA has a significant effect on the strain relaxation caused by the lattice and thermal expansion misfit between the GaN epilayer and the substrate. The PL peak exhibited a blueshift in its energy position and a decrease in the full width at half maximum after annealing, indicating an improvement in the optical quality of the film. Furthermore, a green luminescence appeared after annealing and increased in intensity with increasing annealing time. This effect was attributed to H concentration variation in the GaN film, which was measured by NRA. A high H concentration exists in as-grown GaN, which can neutralize the deep level, and the H-bonded complex dissociates during RTA, This leads to the appearance of a luminescent peak in the PL spectrum. (C) 1998 American Institute of Physics.

Effect of noncoherent islands on the optical properties of the 1.3 mu m InAs/GaAs quantum dots during rapid thermal annealing

The effect of thermal annealing of InAs/GaAs quantum dots (QDs) with emission wavelength at 1.3 mu m have been investigated by photoluminescence (PL) and transmission electron microscopy (TEM measurements. There is a dramatic change in the A spectra when the annealing temperature is raised up to 800 degrees C: an accelerated blushifit of the main emission peak of QDs together with an inhomogeneous broadening of the linewidth. The TEM images shows that the lateral size of normal QDs decreases as the annealing temperature is increased, while the noncoherent islands increase their size and densit. A small fraction of the relative large QDs contain dislocations when the annealing temperature increases up to 800 degrees C. The latter leads to the strong decrease of the PL intensity.

RECRYSTALLIZATION, IMPURITY MIGRATION AND OPTICAL ACTIVATION OF YB-IMPLANTED SILICON INDUCED BY RAPID THERMAL ANNEALING

The rapid thermal annealing temperature dependence of the recrystallization, Yb migration and its optical activation were studied for Yb-implanted silicon. For the annealing regime 800-1000-degrees-C, the Yb segregates both at the crystal/amorphous interface and at the surface, which is different from the usual segregation of Er at the crystal/amorphous interface, and the efficiency of optical activation also increases with annealing temperature. However, the amorphous layer regrows completely and no photoluminescence is observed after the annealing at 1200-degrees-C.

INTERACTION OF CO WITH SI AND SIO2 DURING RAPID THERMAL ANNEALING

The interaction of Co with Si and SiO2 during rapid thermal annealing has been investigated. Phase sequence, layer morphology, and reaction kinetics were studied by sheet resistance, x-ray diffraction, Auger electron spectroscopy, x-ray photoelectron spectroscopy, and scanning electron microscopy. With increasing annealing temperature, Co film on Si(100) is transformed sequentially into Co2Si, CoSi, and finally CoSi2 which corresponds to the minimum of sheet resistance. No evidence of silicide formation was observed for Co/SiO2 annealed even at the high temperature of 1050-degrees-C.

Polycrystalline silicon thin films and solar cells prepared by rapid thermal CVD

Polycrystalline silicon (poly-Si) films(similar to 10 mu m) were grown from dichlorosilane by a rapid thermal chemical vapor deposition (RTCVD) technique, with a growth rate up to 100 Angstrom/s at the substrate temperature (T-s) of 1030 degrees C. The average grain size and carrier mobility of the films were found to be dependent on the substrate temperature and material. By using the poly-Si films, the first model pn(+) junction solar cell without anti-reflecting (AR) coating has been prepared on an unpolished heavily phosphorus-doped Si wafer, with an energy conversion efficiency of 4.54% (AM 1.5, 100 mW/cm(2), 1 cm(2)).

Rapid thermal annealing of arsenic implanted Si1-xGex epilayers

Rapid thermal annealing of arsenic implanted Si1-xGex was studied by secondary ion-mass spectroscopy (SIMS) and spreading resistance probe (SRP) over a wide range of Ge fractions (0-43%). Redistribution of the implanted arsenic was followed as a function of Ge content and annealing temperature. Arsenic concentration profiles from SIMS indicated that the behavior of implanted arsenic in Si1-xGex after RTA was different from that in Si, and the Si1-xGex samples exhibited box-shaped, concentration-dependent diffusion profiles with increasing Ge content. The maximum concentrations of electrically active arsenic in Si1-xGex was found to decrease with increasing Ge content. Experimental results showed that the arsenic diffusion is enhanced with increasing temperature for certain Ge content and strongly dependent on Ge content, and the higher Ge content, the faster As diffusion.

Microstructure studies of PdGe/Ge ohmic contacts to n-type GaAs formed by rapid thermal annealing

A low resistance and shallow ohmic contact to n-GaAs is performed by using Ge/Pd/GaAs trilayer structure and rapid thermal annealing process. The dependence of specific contact resistivity on the temperature of rapid thermal annealing is investigated. A good ohmic contact is formed after annealing at 400-500 degrees C for 60 s. The best specific contact resistivity is 1.4 x 10(-6) Omega cm(2). Auger electron spectroscopy (AES), secondary ion mass spectrometry (SIMS) and scanning electron microscopy (SEM) are used to analyze the interfacial microstructure. A strong correlation between the contact resistance and the film microstructure is observed.

Photoluminescence enhancement of (NH4)(2)S-x passivated InP surface by rapid thermal annealing

Photoluminescence enhancement of (NH4)(2)S-x passivated InP surface followed by rapid thermal annealing (RTA) has been investigated by using photoluminescence (PL), Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS), An increase in PL intensity of up to 10 times was observed after sulfur passivation and RTA treatment compared to unpassivated InP surface. XPS measurement results show that introduction of RTA process can enhance the sulfur remaining on the passivated surface to bond to indium but no evidence of S-P bond is noticeable. Passivation enhancement mechanism is discussed.

COMPARISON OF PROPERTIES OF SOLID-PHASE EPITAXIAL SILICON-ON-SAPPHIRE FILMS RECRYSTALLIZED BY RAPID THERMAL ANNEALING AND FURNACE ANNEALING

Chemically vapour deposited silicon on sapphire (SOS) films 0.25 mu m thick were implanted with Si-28(+) and recrystallized in solid phase by furnace annealing (FA) and IR rapid thermal annealing (RTA) in our laboratory. An improvement in crystalline quality can be obtained using both annealing procedures. After FA, it is hard to retain the intrinsic high resistivity value(10(4)-10(5) Ohm cm) observed in as-grown SOS films, so the improvement process cannot be put to practical use effectively. However, it is demonstrated that by properly adjusting the implantation and RTA conditions, significant improvements in both film quality and film autodoping can be accomplished. This work describes a modified double solid phase epitaxy process in which the intrinsic high resistivities of the as grown SOS films are retained. The mechanism of suppression of Al autodoping is discussed.

Effects of Rapid Thermal Annealing on OpticalProperties of GaInNAs/ GaAs Single Quantum Well Grown by Plasma- Assisted Molecular Beam Epitaxy

国家自然科学基金,国家攀登计划

Light induced rapid thermal diffusion of boron atom in silicon

国家自然科学基金