Polycrystalline silicon thin films and solar cells prepared by rapid thermal CVD
Data(s) |
1997
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Resumo |
Polycrystalline silicon (poly-Si) films(similar to 10 mu m) were grown from dichlorosilane by a rapid thermal chemical vapor deposition (RTCVD) technique, with a growth rate up to 100 Angstrom/s at the substrate temperature (T-s) of 1030 degrees C. The average grain size and carrier mobility of the films were found to be dependent on the substrate temperature and material. By using the poly-Si films, the first model pn(+) junction solar cell without anti-reflecting (AR) coating has been prepared on an unpolished heavily phosphorus-doped Si wafer, with an energy conversion efficiency of 4.54% (AM 1.5, 100 mW/cm(2), 1 cm(2)). |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Zhao YW; Li ZM; He SQ; Liao XB; Sheng SR; Deng LS; Ma ZX .Polycrystalline silicon thin films and solar cells prepared by rapid thermal CVD ,SOLAR ENERGY MATERIALS AND SOLAR CELLS,1997,48(0):321-326 |
Palavras-Chave | #半导体材料 #polycrystalline silicon thin films #solar cells #rapid thermal CVD |
Tipo |
期刊论文 |