Structure and magnetic property of (Ga,Cr)As films with different Cr contents

We report variations in structure and magnetic property of (Ga,Cr) As films with increasing Cr content x. Due to phase segregation, a tendency towards inhomogeneous distribution with increasing x is confirmed. Barkhausen-like magnetization and large remanent magnetic moment were also clearly observed in the samples with x<5.3%. However, spin-glass-like behaviors were observed in both dc and ac magnetic measurements, which might originate from the competition between magnetic nucleation and frustration of long ferromagnetic order in this inhomogeneous system. All the samples exhibit characteristics of variable-range hopping conductivity at temperature below 150 K. Typical magnetic circular dichroism structure was observed in the sample with x=7.9%.

Structure and magnetic characteristics of nonpolar a-plane GaN : Mn films

Diluted magnetic nonpolar GaN:Mn films have been fabricated by implanting Mn ions into unintentionally doped nonpolar a-plane (1 1 (2) over bar 0) GaN films with a subsequent rapid thermal annealing (RTA) process. The structure, morphology and magnetic characteristics of the samples were investigated by means of high-resolution x-ray diffraction (XRD), atomic force microscopy (AFM) and a superconducting quantum interference device (SQUID), respectively. The XRD analysis shows that the RTA process can effectively recover the crystal deterioration caused by the implantation process and that there is no obvious change in the lattice parameter for the as-annealed sample. The SQUID result indicates that the as-annealed sample shows ferromagnetic properties and magnetic anisotropy at room temperature.

Systematic investigation on the influence of the As-4 flux on the magnetic property of (In,Cr)As quantum dots

We study the structure, optical and magnetic characteristics of self-assembled (In,Cr) As diluted magnetic semiconductor quantum dots as a function of the As-4 flux. Increasing the surface energy by increasing the As4 pressure leads to a smaller number of larger dots for a higher As-4 flux. The remanent magnetization measured at 5K also increases with increasing As-4 flux, which is attributed to the enhancement of the effective Cr content due to the As-4-rich condition. We explore the possibility of tailoring magnetism by controlling the As-4/In flux ratio without changing the Cr concentration. Furthermore, extremely low-density QDs have also been successfully grown. Copyright (C) EPLA, 2008

The structural, morphological and magnetic characteristics of Mn-implanted nonpolar a-plane GaN films

Dilute magnetic nonpolar GaN films have been fabricated by implanting Mn into unintentionally doped nonpolar a-plane GaN films at room temperature, and a subsequent rapid thermal annealing. The X-ray diffraction analysis shows that after rapid thermal annealing the peak of the GaN X-ray diffraction curve shifts to a lower angle, indicating a slight expansion of the GaN crystal lattice. Atomic force microscopy analysis shows that the annealing process does not change the morphology of the sample greatly. Magnetic property analysis indicates that the as-annealed sample shows obvious ferromagnetic properties. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Quantum measurement characteristics of a double-dot single electron transistor

Owing to a few unique advantages, the double-dot single electron transistor has been proposed as an alternative detector for charge states. In this work, we present a further study for its signal-to-noise property, based on a full analysis of the setup configuration symmetry. It is found that the effectiveness of the double-dot detector can approach that of an ideal detector, if the symmetric capacitive coupling is taken into account. The quantum measurement efficiency is also analyzed by comparing the measurement time with the measurement-induced dephasing time.

Transport property in narrow barrier GaAs/AlAs superlattice under hydrostatic pressure

The current-voltage (I-V) characteristics of a doped weakly coupled GaAs/AlAs superlattice (SL) with narrow barriers are measured under hydrostatic pressure from 1 bar to 13.5 kbar at both 77 and 300 K. The experimental results show that, contrary to the results in SL with wide barriers, the plateau in the I-V curve at 77 K does not shrink with increasing pressure, and becomes wider after 10.5 kbar. It is explained by the fact that the E-Gamma 1-E-Gamma 1 resonance peak is higher than the E-Gamma 1-E-X1 resonance peak. At 300 K, however, because of the more important contribution of the nonresonant component to the current, the plateau shrinks with increasing pressure. (C) 1999 American Institute of Physics. [S0021-8979(99)02008-3].

Volt-ampere characteristics, nozzle temperature and thruster performances in a low power argon arcjet

Argon gas with simple atomic structure and favorite arcing stability at low input power was used as the propellant. The thruster with a regeneratively cooled nozzle were tested in a vacuum system capable of keeping the chamber pressure at about 10 Pa at a propellant feeding rate of 5 slm. Arc current, arc voltage, thrust, nozzle temperature and propellant feeding rate were measured in situ simultaneously. Effects of the working parameters such as the propellant feeding rate and arc current on the thruster performances, mainly the produced thrust, specific impulse and thrust efficiency, were examined. The variation of arc volt-ampere characteristics with running time and the effect of nozzle temperature on thruster property are discussed.

Studying the Attribution of LiF in OLED by the C-V Characteristics

The organic light-emitting device (OLED) with simple structures of indium tin oxide (ITO)/tris(8-quinolinolato) aluminum (Alq(3))/LiF/Al and ITO/Alq(3)/Al was fabricated to analyze the contribution of LiF in OLED. We used the C-V characteristics to investigate the contribution of LiF in OLED and found that the capacitance of the above-mentioned structures was 12.5 nF and 77.5 nF, respectively. It is shown that the LiF layer affects the property of OLED resulting in the change of the capacitance of the device.

Structural characteristics and redox behaviors of Ce1-xCuxOy solid solutions

Nanosized Ce1-xCuxOy materials were prepared by complexation-combustion method. The structural characteristics and redox behaviors were investigated using X-ray diffraction (XRD), temperature programmed reduction (H-2-TPR), UV-Vis, and Raman spectroscopies. In XRD patterns, no evidence of CuO diffraction peaks are observed for the Ce1-xCuxOy samples calcinated at 650 degreesC for 5 h, until the Cu/(Ce + Cu) ratio is higher than 0.4. The stepwise decrease of the 2theta value of CeO2 in Ce1-xCuxOy with the increasing of Cu concentration suggests that the CU2+ ions incorporate into the CeO2 lattice to form Ce1-xCuxOy solid solutions for low Cu/(Ce + Cu) ratios (x less than or equal to 0.1). The CuO phase begins to segregate from the solid solutions with the further increasing of Cu/(Ce+Cu) ratio. The Raman mode at 1176 cm(-1) ascribed to the enhanced defects appears for CeO2 and the Ce0.9Cu0.1Oy solid solution. Compared with CeO2 alone, the Raman mode of cubic CeO2 shifts from 462 to 443 cm(-1) for the Ce0.9Cu0.1Oy solid solution. The H-2 consumption of the fresh Ce0.95Cu0.05Oy is 1.65 times higher than that needed to reduce CuO to Cu, and it increases to 2.4 after a reoxidation of the partially reduced Ce0.95Cu0.05Oy at 300 degreesC, which indicates that the CeO2 phase is also extensively reduced. Compared with the high Cu/(Ce+Cu) ratio sample Ce0.7Cu0.3Oy, the Ce0.9Cu0.1Oy solid solution shows high and stable redox property even after different reoxidation temperatures. When the reoxidation temperature exceeds 200 degreesC, the a peak (similar to170 degreesC) ascribed to the reduction of surface oxygen disappears, and the P peak (similar to190 degreesC) ascribed to the reduction of Cu2+ species and the partial reduction of bulk CeO2 shifts to higher temperatures with the H-2 consumption 1.16 times higher than that for fresh sample. The result demonstrates that the redox property of the CeO2 is Significantly improved by forming the Ce1-xCuxOy solid solutions.

Crystallographic and electrochemical characteristics of melt-spun Ti-Zr-Ni-La alloys

Ti-based icosahedral quasicrystalline phase (I-phase) exhibited excellent hydrogen storage property for special structure. Unfortunately, the application as the negative electrode material of the nickel-metal hydride batteries was limited due to the poor electrochemical kinetics. Meanwhile, rare-earth element was beneficial to the electrochemical properties of Ti, Zr-based alloy.

Integrated processing-structure-property analysis on rubber in-mold vulcanization

On the basis of the quantitative relationship among rubber processing, structure and property, the methodology of the integrated processing-structure-property analysis on rubber in-mold vulcanization is presented, and then the temporal evolution and spatial distribution characteristics of silicone rubber hot processing parameters, crosslinking structure parameters and mechanical property parameters are obtained by means of the finite element method. The present work is helpful for optimizing curing conditions, and then the design of rubber vulcanization processes according to certain requirements can be done.

Investigation of Chemical Bond Characteristics, Thermal Expansion Coefficients and Bulk Moduli of alpha-R2MoO6 and R2Mo2O7 (R = rare earths) by Using a Dielectric Chemical Bond Method

Theoretical researches are performed on the alpha-R2MoO6 (R = Y, Gd, Tb Dy, Ho, Er, Tm and Yb) and pyrochlore-type R2Mo2O7 (R = Y, Nd, Sm, Gd, Tb and Dy) rare earth molybdates by using chemical bond theory of dielectric description. The chemical bonding characteristics and their relationship with thermal expansion property and compressibility are explored. The calculated values of linear thermal expansion coefficient (LTEC) and bulk modulus agree well with the available experimental values. The calculations reveal that the LTECs and the bulk moduli do have linear relationship with the ionic radii of the lanthanides: the LTEC decreases from 6.80 to 6.62 10(-6)/K and the bulk modulus increases from 141 to 154 GPa when R goes in the order Gd, Tb Dy, Ho, Er, Tm, and Yb in the alpha-R2MoO6 series; while in the R2Mo2O7 series, the LTEC ranges from 6.80 to 6.61 10(-6)/K and the bulk modulus ranges from 147 to 163 GPa when R varies in the order Nd, Sm, Gd, Tb and Dy.

Synthesis and Characterization of Hyperbranched Poly(ether amide)s with Thermoresponsive Property and Unexpected Strong Blue Photoluminescence

A facile and efficient strategy for the syntheses of novel hyperbranched poly(ether amide)s (HPEA) from multihydroxyl primary amines and (meth)acryloyl chloride has been developed. The chemical structures of the HPEAs were confirmed by IR and NMR spectra. Analyses of SEC (size exclusion chromatography) and viscosity characterizations revealed the highly branched structures of the polymers obtained. The resultant hyperbranched polymers contain abundant hydroxyl groups. The thermoresponsive property was obtained from in situ surface modification of abundant OH end groups with N-isopropylacrylamide (NIPAAm). The study oil temperature-dependent characteristics has revealed that NIPAAm-g-HPEA exhibits an adjustable lower critical solution temperature (LCST) of about 34-42 degrees C depending on the grafting degree. More interestingly, the work provided an interesting phenomenon where the HPEA backbones exhibited strong blue photoluminescence.

Crystallographic and electrochemical characteristics of La0.7Mg0.3Ni3.5-x (Al0.5Mo0.5)(x) (x=0-0.8) hydrogen storage alloys

The crystal structure, hydrogen storage property and electrochemical characteristics of the La0.7Mg0.3Ni3.5-x(Al0.5Mo0.5), (x=0-0.8) alloys have been investigated systematically. It can be found that with X-ray powder diffraction and Rietveld analysis the alloys are of multiphase alloy and consisted of impurity LaNi phase and two main crystallographic phases, namely the La(La, Mg)(2)Ni-9 phase and the LaNi5 phase, and the lattice parameter and the cell volume of both the La(La, Mg)(2)Ni-9 phase and the LaNi5 phase increases with increasing A] and Mo content in the alloys. The P-C isotherms curves indicate that the hydrogen storage capacity of the alloy first increases and then decreases with increasing x, and the equilibrium pressure decreases with increasing x. The electrochemical measurements show that the maximum discharge capacity first increases from 354.2 (v = 0) to 397.6 mAh g(-1) (x = 0.6) and then decreases to 370.4 mAh g(-1) (x= 0.8). The high-rate dischargeability of the alloy electrode increases lineally from 55.7% (x=0) to 73.8% (x=0.8) at the discharge current density of 1200 mA g(-1). Moreover, the exchange current density of the alloy electrodes also increases monotonously with increasing x.

Electrochemical characteristics and microstructure of Zr0.9Ti0.1Ni1.1Mn0.6V0.3-LaNi5 composite hydrogen storage alloys

AB(2-x)%LaNi5 (x =0, 1, 5, 10) composite alloys were prepared by melting Zr0.9Ti0.1Ni1.1Mn0.6V0.3 with a small amount of LaNi5 alloy as addition. The microstructure and electrochemical characteristics of the composite alloys were investigated by means of XRD, SEM, EDS and electrochemical measurements. It was shown that LaNi5 addition does not change the basic hexagonal C14 Laves phase of AB(2) alloys, but some second phases have segregated. It was found that the addition of LaNi5 greatly improves the activation property, high-rate dischargeability (HRD) and charge-discharge cycling stability of AB(2) Laves phase alloy. At current density of 1200 mA/g, HRD of the alloy increases from 38.92% (x =0) to 60.09% (x = 10). The capacity retention of the alloy after 200 charge-discharge cycles increases from 57. 10% (x = 0) to 83.86% (x = 5) and 67.31% (x = 10). The improvement of the electrochemical characteristics caused by LaNi5 addition seems to be related to formation of the second phases.