Macro-micro modelling of moisture induced stresses in an ACF flip chip assembly

Purpose – This paper discusses the use of modelling techniques to predict the reliability of an anisotropic conductive film (ACF) flip chip in a humid environment. The purpose of this modelling work is to understand the role that moisture plays in the failure of ACF flip chips. Design/methodology/approach – A 3D macro-micro finite element modelling technique was used to determine the moisture diffusion and moisture-induced stresses inside the ACF flip chip. Findings – The results show that the ACF layer in the flip chip can be expected to be fully saturated with moisture after 3?h at 121°C, 100%RH, 2?atm test conditions. The swelling effect of the adhesive due to this moisture absorption causes predominately tensile stress at the interface between the adhesive and the metallization, which could cause a decrease in the contact area, and therefore an increase in the contact resistance. Originality/value – This paper introduces a macro-micro modelling technique which enables more detailed 3D modelling analysis of an ACF flip chip than previously.

Analyzing the performance of flexible substrates for lead-free applications

The performance of flexible substrates for lead-free applications was studied using finite element method (FEM). Firstly, the thermal induced stress in the flex substrate during the lead free solder reflow process was predicted. The shear stress at the interface between the copper track and flex was plotted. This shear stress increases with the thickness of the copper track and the thickness of the flex. Secondly, an anisotropic conductive film (ACF) flip chip was taken as a typical lead-free application of the flex substrate and the moisture effect on the reliability of ACF joints were studied using a 3D macro-micro modeling technique. It is found that the time to be saturated of an ACF flip chip is much dependent on the moisture diffusion rate in the polyimide substrate. The majority moisture diffuses into the ACF layer from the substrate side rather than the periphery of the ACF. The moisture induced stress was predicted and the predominant tensile stress was found at the interface between the conductive particle and metallization which could reduce the contact area and even cause the electrical failure

High electric current density-induced interfacial reactions in micro ball grid array (μBGA) solder joints

The effect of a high electric current density on the interfacial reactions of micro ball grid array solder joints was studied at room temperature and at 150 °C. Four types of phenomena were reported. Along with electromigration-induced interfacial intermetallic compound (IMC) formation, dissolution at the Cu under bump metallization (UBM)/bond pad was also noticed. With a detailed investigation, it was found that the narrow and thin metallization at the component side produced “Joule heating” due to its higher resistance, which in turn was responsible for the rapid dissolution of the Cu UBM/bond pad near to the Cu trace. During an “electromigration test” of a solder joint, the heat generation due to Joule heating and the heat dissipation from the package should be considered carefully. When the heat dissipation fails to compete with the Joule heating, the solder joint melts and molten solder accelerates the interfacial reactions in the solder joint. The presence of a liquid phase was demonstrated from microstructural evidence of solder joints after different current stressing (ranging from 0.3 to 2 A) as well as an in situ observation. Electromigration-induced liquid state diffusion of Cu was found to be responsible for the higher growth rate of the IMC on the anode side.

Reliability study of the electroless Ni–P layer against solder alloy

Copper (Cu) has been widely used in the under bump metallurgy of chip and substrate metallization for chip packaging. However, due to the rapid formation of Cu–Sn intermetallic compound (IMC) at the tin-based solder/Cu interface during solder reaction, the reliability of this type of solder joint is a serious concern. In this work, electroless nickel–phosphorous (Ni–P) layer was deposited on the Cu pad of the flexible substrate as a diffusion barrier between Cu and the solder materials. The deposition was carried out in a commercial acidic sodium hypophosphite bath at 85 °C for different pH values. It was found that for the same deposition time period, higher pH bath composition (mild acidic) yields thicker Ni–P layer with lower phosphorous content. Solder balls having composition 62%Sn–36%Pb–2%Ag were reflowed at 240 °C for 1 to 180 min on three types of electroless Ni–P layers deposited at the pH value of 4, 4.8 and 6, respectively. Thermal stability of the electroless Ni–P barrier layer against the Sn–36%Pb–2%Ag solder reflowed for different time periods was examined by scanning electron microscopy equipped with energy dispersed X-ray. Solder ball shear test was performed in order to find out the relationship between the mechanical strength of solder joints and the characteristics of the electroless Ni–P layer deposited. The layer deposited in the pH 4 acidic bath showed the weak barrier against reflow soldering whereas layer deposited in pH 6 acidic bath showed better barrier against reflow soldering. Mechanical strength of the joints were deteriorated quickly in the layer deposited at pH 4 acidic bath, which was found to be thin and has a high phosphorous content. From the cross-sectional studies and fracture surface analyses, it was found that the appearance of the dark crystalline phosphorous-rich Ni layer weakened the interface and hence lower solder ball shear strength. Ni–Sn IMC formed at the interfaces was found to be more stable at the low phosphorous content (∼14 at.%) layer. Electroless Ni–P deposited at mild acidic bath resulting phosphorous content of around 14 at.% is suggested as the best barrier layer for Sn–36%Pb–2%Ag solder.

High current density induced damage mechanisms in electronic solder joints: a state-of-the-art review

High current density induced damages such as electromigration in the on-chip interconnection /metallization of Al or Cu has been the subject of intense study over the last 40 years. Recently, because of the increasing trend of miniaturization of the electronic packaging that encloses the chip, electromigration as well as other high current density induced damages are becoming a growing concern for off-chip interconnection where low melting point solder joints are commonly used. Before long, a huge number of publications have been explored on the electromigration issue of solder joints. However, a wide spectrum of findings might confuse electronic companies/designers. Thus, a review of the high current induced damages in solder joints is timely right this moment. We have selected 6 major phenomena to review in this paper. They are (i) electromigration (mass transfer due electron bombardment), (ii) thermomigration (mass transfer due to thermal gradient), (iii) enhanced intermetallic compound growth, (iv) enhanced current crowding, (v) enhanced under bump metallisation dissolution and (vi) high Joule heating and (vii) solder melting. the damage mechanisms under high current stressing in the tiny solder joint, mentioned in the review article, are significant roadblocks to further miniaturization of electronics. Without through understanding of these failure mechanisms by experiments coupled with mathematical modeling work, further miniaturization in electronics will be jeopardized

Computer modelling analysis of the globtop's effects on aluminium wirebond reliability

In power electronics modules, heavy aluminium wires, i.e. wire diameters greater than 100 microns, are bonded to the active semiconductor devices and conductor metallization to form electric circuits of the power electronic module. Due to the high currents that may flow through these wires, a single connection usually contains several wires and thus, a large number of wires are used in a power electronics module. Under normal operation or test condition, a significant amount of stresses and strains induced in the wire and bonding interfaces, resulting in failure over time. In this paper, computer modelling techniques are used to analyse the effect of globtop design on the reliability of aluminium wirebonds under cyclic thermal-mechanical loading conditions. The results will show the sensitivity of the reliability of the wirebonds to the changes in the geometry and the material properties of the wirebond globtop.

Design and measurement of reconfigurable millileter wave reflectarray cells with nematic liquid crystal

Numerical simulations are used to study the electromagnetic scattering from phase agile microstrip reflectarray cells which exploit the voltage controlled dielectric anisotropy property of nematic state liquid crystals (LC). In the computer model two arrays of equal size elements constructed on a 15?m thick tuneable LC layer were designed to operate at centre frequencies of 102 GHz and 130 GHz. Micromachining processes based on the metallization of quartz/silicon wafers and an industry compatible LCD packaging technique were employed to fabricate the grounded periodic structures. The loss and phase of the reflected signals were measured using a quasi-optical test bench with the reflectarray cells inserted at the beam waist of the imaged Gaussian beam, thus eliminating some of the major problems associated with traditional free-space characterisation at these frequencies. By applying a low frequency AC bias voltage of 10 V, a 165o phase shift with a loss 4.5 dB-6.4 dB at 102 GHz and 130o phase shift with a loss variation between 4.3 dB – 7 dB at 130 GHz was obtained. The experimental results are shown to be in close agreement with the computer model.

Determination of the Physical Properties of Room Temperature Ionic Liquids Using a Love Wave Device

In this work, we have shown that a 100 MHz Love wave device can be used to determine whether room temperature ionic liquids (RTILs) are Newtonian fluids and have developed a technique that allows the determination of the density-viscosity product, rho eta of a Newtonian RTIL. In addition, a test for a Newtonian response was established by relating the phase change to insertion loss change. Five concentrations of a water-miscible RTIL and seven pure RTILs were measured. The changes in phase and insertion loss were found to vary linearly with the square root of the density-viscosity product for values up to (rho eta)(1/2) similar to 10 kg m(-2) s(-1/2). The square root of the density-viscosity product was deduced from the changes in either phase or insertion loss using glycerol as a calibration liquid. In both cases, the deduced values of rho eta agree well with those measured using viscosity and density meters. Miniaturization of the device, beyond that achievable with the lower-frequency quartz crystal microbalance approach, to measure smaller volumes is possible. The ability to fabricate Love wave and other surface acoustic wave sensors using planar metallization technologies gives potential for future integration into lab-on-a-chip analytical systems for characterizing ionic liquids.

Millimeter-wave printed circuit board characterization using substrate integrated waveguide resonators

This paper proposes a substrate integrated waveguide
(SIW) cavity-based method that is compliant with
ground-signal–ground (GSG) probing technology for dielectric
characterization of printed circuit board materials at millimeter
wavelengths. This paper presents the theory necessary to retrieve
dielectric parameters from the resonant characteristics of SIW
cavities with particular attention placed on the coupling scheme
and means for obtaining the unloaded resonant frequency. Different
sets of samples are designed and measured to address the
influence of the manufacturing process on the method. Material
parameters are extracted at - and -band from measured data
with the effect of surface roughness of the circuit metallization
taken into account.

Nanopatterning and functionalization of phospholipid-based Langmuir-Blodgett and Langmuir-Schaefer films

Durant les dernières décennies, la technique Langmuir-Blodgett (LB) s’est beaucoup développée dans l’approche « bottom-up » pour la création de couches ultra minces nanostructurées. Des patrons constitués de stries parallèles d’environ 100 à 200 nm de largeur ont été générés avec la technique de déposition LB de monocouches mixtes de 1,2-dilauroyl-sn-glycéro-3-phosphatidylcholine (DLPC) et de 1,2-dipalmitoyl-sn-glycéro-3-phosphatidylcholine (DPPC) sur des substrats de silicium et de mica. Afin d’amplifier la fonctionnalité de ces patrons, la 1-palmitoyl-2-(16-(S-methyldithio)hexadécanoyl)-sn-glycéro-3-phosphatidylcholine (DSDPPC) et la 1-lauroyl-2-(12-(S-methyldithio)dodédecanoyl)-sn-glycéro-3-phosphatidylcholine (DSDLPC) ont été employées pour la préparation de monocouches chimiquement hétérogènes. Ces analogues de phospholipide possèdent un groupement fonctionnel méthyldisulfide qui est attaché à la fin de l’une des chaînes alkyles. Une étude exhaustive sur la structure de la phase des monocouches Langmuir, Langmuir-Schaefer (LS) et LB de la DSDPPC et de la DSDLPC et leurs différents mélanges avec la DPPC ou la DLPC est présentée dans cette thèse. Tout d’abord, un contrôle limité de la périodicité et de la taille des motifs des stries parallèles de DPPC/DLPC a été obtenu en variant la composition lipidique, la pression de surface et la vitesse de déposition. Dans un mélange binaire de fraction molaire plus grande de lipide condensé que de lipide étendu, une vitesse de déposition plus lente et une plus basse pression de surface ont généré des stries plus continues et larges. L’addition d’un tensioactif, le cholestérol, au mélange binaire équimolaire de la DPPC/DLPC a permis la formation de stries parallèles à de plus hautes pressions de surface. La caractérisation des propriétés physiques des analogues de phospholipides a été nécessaire. La température de transition de phase de la DSDPPC de 44.5 ± 1.5 °C comparativement à 41.5 ± 0.3 °C pour la DPPC. L’isotherme de la DSDPPC est semblable à celui de la DPPC. La monocouche subit une transition de phase liquide-étendue-à-condensée (LE-C) à une pression de surface légèrement supérieure à celle de la DPPC (6 mN m-1 vs. 4 mN m-1) Tout comme la DLPC, la DSDLPC demeure dans la phase LE jusqu’à la rupture de la monocouche. Ces analogues de phospholipide existent dans un état plus étendu tout au long de la compression de la monocouche et montrent des pressions de surface de rupture plus basses que les phospholipides non-modifiés. La morphologie des domaines de monocouches Langmuir de la DPPC et de la DSDPPC à l’interface eau/air a été comparée par la microscopie à angle de Brewster (BAM). La DPPC forme une monocouche homogène à une pression de surface (π) > 10 mN/m, alors que des domaines en forme de fleurs sont formés dans la monocouche de DSDPPC jusqu’à une π ~ 30 mN m-1. La caractérisation de monocouches sur substrat solide a permis de démontrer que le patron de stries parallèles préalablement obtenu avec la DPPC/DLPC était reproduit en utilisant des mélanges de la DSDPPC/DLPC ou de la DPPC/DSDLPC donnant ainsi lieu à des patrons chimiquement hétérogènes. En général, pour obtenir le même état de phase que la DPPC, la monocouche de DSDPPC doit être comprimée à de plus hautes pressions de surface. Le groupement disulfide de ces analogues de phospholipide a été exploité, afin de (i) former des monocouches auto-assemblées sur l’or et de (ii) démontrer la métallisation sélective des terminaisons fonctionnalisées des stries. La spectrométrie de photoélectrons induits par rayons X (XPS) a confirmé que la monocouche modifiée réagit avec la vapeur d’or pour former des thiolates d’or. L’adsorption de l’Au, de l’Ag et du Cu thermiquement évaporé démontre une adsorption préférentielle de la vapeur de métal sur la phase fonctionnalisée de disulfide seulement à des recouvrements sub-monocouche.

Buried screen-printed contacts for silicon solar cells

A Simple way to improve solar cell efficiency is to enhance the absorption of light and reduce the shading losses. One of the main objectives for the photovoltaic roadmap is the reduction of metalized area on the front side of solar cell by fin lines. Industrial solar cell production uses screen-printing of metal pastes with a limit in line width of 70-80 μm. This paper will show a combination of the technique of laser grooved buried contact (LGBC) and Screen-printing is able to improve in fine lines and higher aspect ratio. Laser grooving is a technique to bury the contact into the surface of silicon wafer. Metallization is normally done with electroless or electrolytic plating method, which a high cost. To decrease the relative cost, more complex manufacturing process was needed, therefore in this project the standard process of buried contact solar cells has been optimized in order to gain a laser grooved buried contact solar cell concept with less processing steps. The laser scribing process is set at the first step on raw mono-crystalline silicon wafer. And then the texturing etch; phosphorus diffusion and SiNx passivation process was needed once. While simultaneously optimizing the laser scribing process did to get better results on screen-printing process with fewer difficulties to fill the laser groove. This project has been done to make the whole production of buried contact solar cell with fewer steps and could present a cost effective opportunity to solar cell industries.

A reducao de pelotas de minerio de ferro pela utilizacao de carvoes nao desgaseificados e desgaseificados com diferentes relacoes cfix/fetot

Através de ensaios isotérmicos de redução (950°C) e com velocidade de aquecimento constante, estuda-se o comportamento do sistema carvão-pelota de minério de ferro (CVRD, tipo RD) sob o ponto de vista dos graus de redução e respectivamente graus de metalização obtidos. Os ensaios de redução foram realizados em reatores estáticos, aquecidos eletricamente num forno vertical. Foram utilizados, como redutores sólidos, os carvões de Charqueadas (RS) e de Butiá-Recreio(RS), tanto no estado não desgaseificado, como no estado desgaseificado e com diferentes relações Cfix/Fetot. Foram traçadas curvas dos graus de redução e metalização obtidos contra o tempo, sendo as mesmas analisadas quanto: a influência da natureza do carvão, da presença de matéria volátil e da relação Cfix/Fetot. Também foram determinadas constantes de velocidade da reação global de redução na sistema estudado.

Interface microstructure of alumina mechanically metallized with Ti brazed to Fe–Ni–Co using different fillers

NASCIMENTO,R.M. et al.Interface microstructure of alumina mechanically metallized with Ti brazed to Fe–Ni–Co using different fillers. Materials Science and Engineering A, v.466, n.1/2, p. 195-200, 2007.