Valence state change and refractive index change induced by femtosecond laser irradiation in Sm3+ doped fluoroaluminate glass

We report femtosecond laser induced valence state and refractive index change in transparent Sin(3+)-doped fluoroaluminate glass. The effect of annealing on the induced changes was studied and the thermal stability of these changes was discussed. The results show that the femtosecond laser induced valence state change is more stable than the induced refractive index change. The observed phenomenon could be applied to design the thermally erasable or stable storage medium. (c) 2007 Elsevier B.V. All rights reserved.

Ichthyoplankton community in the Columbia River plume off Oregon: effects of fluctuating oceanographic conditions

Ichthyoplankton samples were collected at approximately 2-week intervals, primarily during spring and summer 1999−2004, from two stations located 20 and 30 km from shore near the Columbia River, Oregon. Northern anchovy (Engraulis mordax) was the most abundant species collected, and was the primary species associated with summer upwelling conditions, but it showed significant interannual and seasonal fluctuations in abundance and occurrence. Other abundant taxa included sanddabs (Citharichthys spp.), English sole (Parophrys vetulus), and blacksmelts (Bathylagidae). Two-way cluster analysis revealed strong species associations based primarily on season (before or after the spring transition date). Ichthyoplankton abundances were compared to biological and environmental data, and egg and larvae abundances were found to be most correlated with sea surface temperature. The Pacific Decadal Oscillation changed sign (from negative to positive) in late 2002 and indicated overall warmer conditions in the North Pacific Ocean. Climate change is expected to alter ocean upwelling, temperatures, and Columbia River flows, and consequently fish eggs and larvae distributions and survival. Long-term research is needed to identify how ichthyoplankton and fish recruitment are affected by regional and largescale oceanographic proces

Optimizing the energy output of vertical axis wind turbines for fluctuating wind conditions

The control of a wind turbine to the mean wind speed in a gusty wind results in very poor performance. Fluctuations in wind speed with time constants shorter than the response time of a wind turbine results in operation away from optimum design conditions. The effectiveness of a turbine operating in a gusty wind is shown though the use of an unsteady performance coefficient, C e. This performance coefficient is similar in form to a power coefficient. However in order to accommodate unsteady effects, Ce is defined as a ratio of energy extracted to the total wind energy available over a set time period. The turbine's response to real wind data is modelled, in the first instance, by assuming a constant rotational speed operation. It is shown that a significant increase in energy production can be realized by demanding a Tip Speed Ratio above the steady state optimum. The constant speed model is then further extended to incorporate inertial and controller effects. Parameters dictating how well a turbine can track a demand in Tip Speed Ratio have been identified and combined, to form a non-dimensional turbine response parameter. This parameter characterizes a turbine's ability to track a demand in Tip Speed Ratio dependent on an effective gust frequency. A significant increase in energy output of 42% and 245% is illustrated through the application of this over-speed control. This is for the constant rotational speed and Tip Speed Ratio feedback models respectively. The affect of airfoil choice on energy extraction within a gusty wind has been considered. The adaptive control logic developed enables the application of airfoils demonstrating high maximum L/D values but sharp stalling characteristics to be successfully used in a VAWT design.

Statistical gear health analysis which is robust to fluctuating loads and operating speeds

Condition-based maintenance is concerned with the collection and interpretation of data to support maintenance decisions. The non-intrusive nature of vibration data enables the monitoring of enclosed systems such as gearboxes. It remains a significant challenge to analyze vibration data that are generated under fluctuating operating conditions. This is especially true for situations where relatively little prior knowledge regarding the specific gearbox is available. It is therefore investigated how an adaptive time series model, which is based on Bayesian model selection, may be used to remove the non-fault related components in the structural response of a gear assembly to obtain a residual signal which is robust to fluctuating operating conditions. A statistical framework is subsequently proposed which may be used to interpret the structure of the residual signal in order to facilitate an intuitive understanding of the condition of the gear system. The proposed methodology is investigated on both simulated and experimental data from a single stage gearbox. © 2011 Elsevier Ltd. All rights reserved.

Spectroscopy of neutron-rich Dy168,170: Yrast band evolution close to the NpNn valence maximum

The yrast sequence of the neutron-rich dysprosium isotope Dy168 has been studied using multinucleon transfer reactions following collisions between a 460-MeV Se82 beam and an Er170 target. The reaction products were identified using the PRISMA magnetic spectrometer and the γ rays detected using the CLARA HPGe-detector array. The 2+ and 4+ members of the previously measured ground-state rotational band of Dy168 have been confirmed and the yrast band extended up to 10+. A tentative candidate for the 4+→2+ transition in Dy170 was also identified. The data on these nuclei and on the lighter even-even dysprosium isotopes are interpreted in terms of total Routhian surface calculations and the evolution of collectivity in the vicinity of the proton-neutron valence product maximum is discussed. © 2010 The American Physical Society.

Study of valence intersubband absorption in tensile strained Si/SiGe quantum wells

The hole subband structures and effective masses of tensile strained Si/Si1-yGey quantum wells are calculated by using the 6x6 k.p method. The results show that when the tensile strain is induced in the quantum well, the light-hole state becomes the ground state, and the light hole effective masses in the growth direction are strongly reduced while the in-plane effective masses are considerable. Quantitative calculation of the valence intersubband transition between two light hole states in a 7nm tensile strained Si/Si0.55Ge0.45 quantum well grown on a relaxed Si0.5Ge0.5 (100) substrates shows a large absorption coefficient of 8400 cm(-1).

Valence band offset of MgO/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy

The valence band offset (VBO) of MgO (111)/4H-SiC heterojunction has been directly measured by x-ray photoelectron spectroscopy. The VBO is determined to be 3.65 +/- 0.23 eV and the conduction band offset is deduced to be 0.92 +/- 0.23 eV, indicating that the heterojunction has a type- I band alignment. The accurate determination of the valence and conduction band offsets is important for the applications of MgO/SiC optoelectronic devices. (C) 2008 American Institute of Physics.

Valence band offset of ZnO/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy

The valence band offset (VBO) of the wurtzite ZnO/4H-SiC heterojunction is directly determined to be 1.61 +/- 0.23 eV by x-ray photoelectron spectroscopy. The conduction band offset is deduced to be 1.50 +/- 0.23 eV from the known VBO value, which indicates a type-II band alignment for this heterojunction. The experimental VBO value is confirmed and in good agreement with the calculated value based on the transitive property of heterojunctions between ZnO, SiC, and GaN. (C) 2008 American Institute of Physics.

Valence band offset of MgO/InN heterojunction measured by x-ray photoelectron spectroscopy

MgO may be a promising gate dielectric and surface passivation film for InN based devices and the valence band offset of MgO/InN heterojunction has been measured by x-ray photoelectron spectroscopy. The valence band offset is determined to be 1.59 +/- 0.23 eV. Given the experimental band gap of 7.83 for the MgO, a type-I heterojunction with a conduction band offset of 5.54 +/- 0.23 eV is found. The accurate determination of the valence and conduction band offsets is important for use of MgO/InN electronic devices. (c) 2008 American Institute of Physics.

Valence band offset of ZnO/GaAs heterojunction measured by x-ray photoelectron spectroscopy

X-ray photoelectron spectroscopy has been used to measure the valence band offset at the ZnO/GaAs heterojunction interface. The valence band offset is determined to be 2.39 +/- 0.23 eV. As a consequence, a type-II heterojunction with a conduction band offset of -0.44 +/- 0.23 eV is found. The directly obtained value is in good agreement with the result of theoretical calculations based on the interface-induced gap states and the chemical electronegativity theory. (c) 2008 American Institute of Physics.

Valence band offset of ZnO/SrTiO3 heterojunction measured by x-ray photoelectron spectroscopy

X-ray photoelectron spectroscopy has been used to measure the valence band offset (VBO) of the ZnO/SrTiO3 heterojunction. It is found that a type-II band alignment forms at the interface. The VBO and conduction band offset (CBO) are determined to be 0.62 +/- 0.23 and 0.79 +/- 0.23 eV, respectively. The directly obtained VBO value is in good agreement with the result of theoretical calculations based on the interface-induced gap states and the chemical electronegativity theory. Furthermore, the CBO value is also consistent with the electrical transport investigations.

Valence band offset of InN/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy

The valence band offset (VBO) of InN/4H-SiC heterojunction has been directly measured by x-ray photoelectron spectroscopy. The VBO is determined to be 0.55 +/- 0.23 eV and the conduction band offset is deduced to be -2.01 +/- 0.23 eV, indicating that the heterojunction has a type-I band alignment. The accurate determination of the valence and conduction band offsets is important for applications of InN/SiC optoelectronic devices.