Structural-electronic aspects related to the near-infrared light emission of Fe-doped silicon films

The need of efficient (fast and low consumption) optoelectronic devices has always been the driving force behind the investigation of materials with new or improved properties. To be commercially attractive, however, these materials should be compatible with our current micro-electronics industry and/or telecommunications system. Silicon-based compounds, with their matured processing technology and natural abundance, partially comply with such requirements-as long as they emit light. Motivated by these issues, this work reports on the optical properties of amorphous Si films doped with Fe. The films were prepared by sputtering a Si+Fe target and were investigated by different spectroscopic techniques. According to the experimental results, both the Fe concentration and the thermal annealing of the samples induce changes in their atomic structure and optical-electronic properties. In fact, after thermal annealing at similar to 750 degrees C, the samples partially crystallize with the development of Si and/or beta-FeSi(2) crystallites. In such a case, certain samples present light emission at similar to 1500 nm that depends on the presence of beta-FeSi(2) crystallites and is very sensitive to the annealing conditions. The most likely reasons for the light emission (or absence of it) in the considered Fe-doped Si samples are presented and discussed in view of their main structural-electronic characteristics. (C) 2011 Elsevier Ltd. All rights reserved.

Glass-to-Vitroceramic Transition in the Yttrium Aluminoborate System: Structural Studies by Solid-State NMR

The crystallization of laser glasses in the system (B(2)O(3))(0.6){(Al(2)O(3))(0.4-y)(Y(2)O(3))(y)} (0.1 <= y <= 0.25) doped with different levels of ytterbium oxide has been investigated by X-ray powder diffraction, differential thermal analysis, and various solid-state NMR techniques. The homogeneous glasses undergo major phase segregation processes resulting in crystalline YBO(3), crystalline YAI(3)(BO(3))(4), and residual glassy B(2)O(3) as the major products. This process can be analyzed in a quantitative fashion by solid-state (11)B, (27)Al, and (89)Y NMR spectroscopies as well as (11)B{(27)Al} rotational echo double resonance (REDOR) experiments. The Yb dopants end up in both of the crystalline components, producing increased line widths of the corresponding (11)B, (27)Al, and (89)Y NMR resonances that depend linearly on the Yb/Y substitution ratio. A preliminary analysis of the composition dependence suggests that the Yb(3+) dopant is not perfectly equipartitioned between both crystalline phases, suggesting a moderate preference of Yb to substitute in the crystalline YBO(3) component.

Effects of gamma radiation on the photoluminescence properties of polycarbonate matrices doped with terbium complex

Luminescent films containing terbium complex [Tb(acac)(3)(H(2)O)(3)] (acac = acetylacetonate) doped into a polycarbonate (PC) matrix were prepared and irradiated at low-dose gamma radiation with ratio of 5 and 10 kGy. The PC polymer was doped with 5% (w/w) of the Tb(3+) complex. The thermal behavior was investigated by utilization of differential scanning calorimetry (DSC) and thermogravimetry analysis (TGA). Changes in thermal stability due to the addition of doping agent into the polycarbonate matrix. Based on the emission spectra of PC:5% Tb(acac)(3) film were observed the characteristic bands arising from the (5)D(4) -> (7)F(J) transitions of Tb(3+) ion (J = 0-6), indicating the ability to obtain the luminescent films. Doped samples irradiated at low dose of gamma irradiation showed a decrease in luminescence intensity with increasing of the dose. (C) 2009 Elsevier Ltd. All rights reserved.

Calorimetric investigations of luminescent films polycarbonate (PC) doped with europium complex [Eu(TTA)(3)(H(2)O)(2)]

Polymers doped with rare earth complexes are advantaged in film production for many applications in the luminescent field. In this luminescent polycarbonate (PC) films doped with diaquatris(thenoyltrifluoroacetonate)europium(III) complex [Eu(TTA)(3)(H(2)O)(2)] were prepared and their calorimetric and luminescent properties in the solid state are reported. The thermal behavior was investigated by utilization of differential scanning calorimetry (DSC) and thermogravimetry (TG). Due of the addition of rare earth [Eu(TTA)(3)(H(2)O)(2)] into PC matrix, changes were observed in the thermal behavior concerning the glass transition and thermal stability. Characteristic broadened narrow bands arising from the (5)D(0) -> (7)F(J) transitions (J = 4-0) of Eu(3+) ion indicate the incorporation of the Eu(3+) ions in the polymer. The luminescent films show enhancement emission intensity with an increase of rare earth concentration in polymeric matrix accompanied by decrease in thermal stability.

Effect of the catalyst composition in the Pt-x(Ru-Ir)(1-x)/C system on the electro-oxidation of methanol in acid media

The effect of variations in the composition for ternary catalysts of the type Pt-x(Ru-Ir)(1-x)/C on the methanol oxidation reaction in acid media for x values of 0.25, 0.50 and 0.75 is reported. The catalysts were prepared by the sol-gel method and characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), atomic absorption spectroscopy (AAS) and energy dispersive X-ray (EDX) analyses. The nanometric character (2.8-3.2 nm) of the sol-gel deposits was demonstrated by XRD and TEM while EDX and AAS analyses showed that the metallic ratio in the compounds was very near to the expected one. Cyclic voltammograms for methanol oxidation revealed that the reaction onset occur at less positive potentials in all the ternary catalysts tested here when compared to a Pt-0.75-Ru-0.25/C (E-Tek) commercial composite. Steady-state polarization experiments (Tafel plots) showed that the Pt-0.25(Ru-Ir)(0.75)/C catalyst is the more active one for methanol oxidation as revealed by the shift of the reaction onset towards lower potentials. In addition, constant potential electrolyses suggest that the addition of Ru and Ir to Pt decreases the poisoning effect of the strongly adsorbed species generated during methanol oxidation. Consequently, the Pt-0.25 (Ru-Ir)(0.75)/C Composite catalyst is a very promising one for practical applications. (c) 2007 Elsevier B.V. All rights reserved.

Modified LPE system used to diffuse Cd to obtain InSb infrared detectors

We are presenting here p/n junctions obtained with a modified opened liquid-phase epitaxy (LPE) system, used to diffuse indium antimonide (InSb) doped with Cd over InSb doped with Te wafers, in order to make InSb infrared (IR) sensors. This technique has several advantages: the diffusion can be performed in bigger substrate areas improving the device production; this method decreases the device manipulation, decreasing human mistakes and increasing the process reproducibility. The opened LPE in this work produced sensors in the first case with vapor of the diffusion material, coming from a microholed carbon boat full of the diffusion material, over which is positioned the substrate at atmospheric pressure. In the second, the diffusion material is on the bottom of a quartz recipient, and the InSb/Te wafer works as its cover, and vacuum was used. The IR sensors produced with the first method measured 8.9 x 10(7) cm Hz(1/2)/W as detectivity value and higher IR spectral response at 4.6 mu m, and those produced with the second 2.8 x 10(9) cm Hz(1/2)/W, at 4.4 mu m. Besides the electrical-optical properties, the structural properties of diffused layers were investigated by X-ray diffraction (XRD), scanning electron and atomic force microscopy (SEM, AFM), energy-dispersive and secondary ion mass spectroscopy (EDS, SIMS). (C) 2007 Elsevier B.V. All rights reserved.

Lanthanum-doped Bi4Ti3O12 prepared by the soft chemical method: Rietveld analysis and piezoelectric properties

Bi4-xLaxTi3O12 (BLT) thin films and powders with x ranging from 0 to 0.75 were prepared by the polymeric precursor solution. The effect of lanthanum on the structure of BIT powders was investigated by Rietveld Method. The increase of lanthanum content does not lead to any secondary phases. Orthorhombicity of the bismuth titanate (BIT) crystal lattice decreased with the increase of lanthanum content due the reduction of a/b ratio. The BLT films show piezoelectric coefficients of 45, 19, 16 and 10 pm/V for x = 0, 0.25, 0.50 and 0.75, respectively. The piezoelectric response is strongly reduced by the amount of lanthanum added to the system. (c) 2006 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

Rietveld analysys and electrical properties of lanthanum doped BiFeO3 ceramics

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Microstructure and electrical properties of (Ta, Co, Pr) doped TiO2 based electroceramics

The addition of different dopants affects the densification, mean grain size and electrical properties of TiO2-based varistor ceramics. This paper discusses the microstructural and electrical properties of (Ta, Co, Pr) doped TiO2 systems, demonstrating that some of these systems display electrical properties that allow for their use as low voltage varistor. Dopants such as Ta2O5 play a special role in the formation of barriers at the grain boundary and in the nonlinear behavior in TiO2-based systems. The higher values of nonlinear coefficient and breakdown electric field were obtained in the system just doped with Ta2O5 and CoO.

WO3 and ZnO-doped SnO2 ceramics as insulating material

SnO2 ceramics doped with ZnO and WO3 were prepared by mixed oxide method. The effect of ZnO and WO3 additives could be explained by the substitution of Sn4+ by Zn2+ and W6+. The addition of WO3 inhibits the grain growth due to the segregation of SnZnWO8 and ZnWO6 at the grain boundaries without strong influence on the densification process. The electrical characterization (log E x log J) shows that the ternary system SnO2-ZnO-WO3 exhibits a very high resistivity of around 10(14) Omega M. Independently of the WO3 concentration, the electrical conductivity of the Sn02-ZnO-WO3 system is always lower than that of the undoped tin dioxide. (C) 2005 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

Grain-boundary segregation and precipitates in La2O3 and Pr2O3 doped SnO2 center dot CoO-based varistors

Structural heterogeneities in SnO2.CoO-based varistors were analyzed by transmission electron microscopy. In SnO2.CoO-based system doped with La2O3 and Pr2O3 two kinds of precipitate phases at grain boundary region were found. Using energy dispersive spectrometry they were found to be Co2SnO4 and Pr2Sn2O7, presenting a defined crystalline structure. It was also identified that such precipitate phases are mainly located in triple-junctions of the microstructure. HRTEM analysis revealed the existence of other two types of junctions, one as being homo-junctions of SnO2 grains and other due to twin grain boundaries inside the SnO2.CoO grain. The role of these types of junction in the overall nonlinear electrical features is also discussed. (C) 2003 Elsevier B.V. Ltd. All rights reserved.

Niobium doped Bi4Ti3O12 ceramics obtained by the polymeric precursor method

Pure and niobium doped bismuth titanate ceramics (Bi4Ti3-xNbxO12 (BTN)), with x ranging from 0 to 0.4 were prepared by the polymeric precursor method. X-ray diffraction showed no secondary phases. Increasing niobium content leads to more resistive ceramics. The shape and size of the grains are strongly influenced by the niobiurn added to the system. The dielectric constant is not influenced by the niobium addition while hysteresis loops are significantly narrowed. (c) 2006 Elsevier B.V All rights reserved.

Microstructural evolution during sintering of CoO doped SnO2 ceramics

Addition of 0.5 mol% of CoO into SnO2 promotes densification of this oxide to 99% of the theoretical density during sintering. TEM in this system reveals that after sintering at 1210 degrees C a secondary phase of Co2SnO4 is precipitated at the SnO2 grain boundaries during cooling. This phase is formed by diffusion of Co ions from the bulk to the grain boundary during sintering leaving needle-like defects at the grain bulk. The high resolution TEM micrograph of this system sintered at 1210 degrees C and 1400 degrees C showed an amorphous grain boundary region low in cobalt, indicating that the Co2SnO4 phase is precipitated from this region. (C) 1999 Elsevier B.V. Limited and Techna S.r.l. All rights reserved.

Photoluminescence in disordered sm-doped PbTiO3: Experimental and theoretical approach

Sm-doped PbTiO3 powder was synthesized by the polymeric precursor method, and was heat treated at different temperatures. The x-ray diffraction, photoluminescence, and UV-visible were used as a probe for the structural order degree short-, intermediate-, and long-range orders. Sm-3+ ions were used as markers of these order-disorder transformations in the PbTiO3 system. From the Rietveld refinement of the Sm-doped PbTiO3 x-ray diffraction data, structural models were obtained and analyzed by periodic ab initio quantum mechanical calculations using the CRYSTAL 98 package within the framework of density functional theory at the B3LYP level. This program can yield important information regarding the structural and electronic properties of crystalline and disordered structures. The experimental and theoretical results indicate the presence of the localized states in the band gap, due to the symmetry break, which is responsible for visible photoluminescence at room temperature in the disordered structure. (c) 2006 American Institute of Physics.

Electro-optical properties of Er-doped SnO2 thin films

Photoconductivity of SnO2 sol-gel films is excited, at low temperature, by using a 266 nm line-fourth harmonic-of a Nd:YAG laser. This line has above bandgap energy and promotes generation of electron-hole pairs, which recombines with oxygen adsorbed at grain boundary. The conductivity increases up to 40 times. After removing the illumination on an undoped SnO2 film, the conductivity remains unchanged, as long as the temperature is kept constant. Adsorbed oxygen ions recombine with photogenerated holes and are continuously evacuated from the system, leaving a net concentration of free electrons into the material, responsible for the increase in the conductivity. For Er doped SnO2, the excitation of conductivity by the laser line has similar behavior, however after removing illumination, the conductivity decreases with exponential-like decay. (C) 2003 Elsevier Ltd. All rights reserved.